DMB53D0UV Datasheet by Diodes Incorporated

7| 7| I—I Q * % “ .|_| U U H [—| TI .|_| L] U DMB53DOUV 1 017 Document number 0531651 Rev 772 www.diodes.com

DMB53D0UV

Document number: DS31651 Rev. 7 - 2

1 of 7

www.diodes.com March 2012

DMB53D0UV

N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR

Features

• N-Channel MOSFET and NPN Transistor in One Package

• Low On-Resistance

• Very Low Gate Threshold Voltage, 1.0V max

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• ESD Protected MOSFET Gate up to 2kV

• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT563

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

Ordering Information (Note 3)

Part Number Case Packaging

DMB53D0UV-7 SOT563 3000/Tape & Reel

DMB53D0UV-13 SOT563 10000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

E

D

2

S

2

Q

1

G

2

Q

2

B

C

MB1 = Marking Code

YM = Date Code Marking

Y = Year (ex: V = 2008)

M = Month (ex: 9 = September)

MB1

Y

M

SOT563

Top View Top View

Internal Schematic

Bottom View

ESD PROTECTED TO 2kV

m5” DMBSSDOUV 2007 Ducumenl number 0531651 Rev 772 www.diodes.cnm

DMB53D0UV

Document number: DS31651 Rev. 7 - 2

2 of 7

www.diodes.com March 2012

DMB53D0UV

Maximum Ratings – MOSFET, Q1 @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage VDSS 50 V

Gate-Source Voltage VGSS ±12 V

Drain Current (Note 4) Continuous ID 160 mA

Pulsed Drain Current (Note 4) IDM 560 mA

Maximum Ratings - NPN Transistor, Q2 @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage VCBO 50 V

Collector-Emitter Voltage VCEO 45 V

Emitter-Base Voltage VEBO 6.0 V

Collector Current IC 100 mA

Thermal Characteristics, Total Device @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1) PD 250 mW

Thermal Resistance, Junction to Ambient (Note 1) R

θ

JA 500 °C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics - MOSFET @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage BVDSS 50 ⎯ ⎯ V VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 10 μA VDS = 50V, VGS = 0V

Gate-Body Leakage IGSS ⎯ ⎯ 1.0

5.0 μA VGS = ±8V, VDS = 0V

VGS = ±12V, VDS = 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage VGS

(

th

)

0.7 0.8 1.0 V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance RDS (ON) ⎯ 3.1 4 Ω VGS = 4V, ID = 100mA

⎯ 4 5 VGS = 2.5V, ID = 80mA

Forward Transconductance gFS 180 ⎯ ⎯ mS VDS = 10V, ID = 100mA,

f = 1.0KHz

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance Ciss ⎯ 25 ⎯ pF VDS = 10V, VGS = 0V,

f = 1.0MHz

Output Capacitance Coss ⎯ 5 ⎯ pF

Reverse Transfer Capacitance Crss ⎯ 2.1 ⎯ pF

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to product testing.

m5” amcao ER E0 an we hFE CURRENT DR N CURR T DR DMB53DOUV 3M7 Mavch 2012 Document number Dsatsm Hey 7 , 2 www.dlodes.com ©Dmdes hvcmpavaled

DMB53D0UV

Document number: DS31651 Rev. 7 - 2

3 of 7

www.diodes.com March 2012

DMB53D0UV

Electrical Characteristics - NPN Transistor @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage (Note 5) V

(

BR

)

CBO 50 — — V

IC = 10μA, IB = 0

Collector-Emitter Breakdown Voltage (Note 5) V

(

BR

)

CEO 45 — — V

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage (Note 5) V

(

BR

)

EBO 6 — — V

IE = 1μA, IC = 0

DC Current Gain (Note 5) hFE 200 290 450 —

VCE = 5.0V, IC = 2.0mA

Collector-Emitter Saturation Voltage (Note 5) VCE(SAT) — —

100

300 mV IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Saturation Voltage (Note 5) VBE(SAT) — 700

900 — mV

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Voltage (Note 5) VBE 580

— 660

— 700

770 mV VCE = 5.0V, IC = 2.0mA

VCE = 5.0V, IC = 10mA

Collector-Cutoff Current (Note 5) ICBO

ICBO — — 15

5.0 nA

µA VCB = 30V

VCB = 30V, TA = 150°C

Collector-Emitter Cut-Off Current (Note 5) ICES — — 100 nA

VCE = 45V

Gain Bandwidth Product fT 100 — — MHz

VCE = 5.0V, IC = 10mA,

f = 100MHz

Output Capacitance COBO — — 4.5 pF

VCB = 10V, f = 1.0MHz

Noise Figure NF — — 10 dB VCE = 5V, RS = 2.0kΩ,

f = 1.0kHz, BW = 200Hz

MOSFET

Fig. 1 Typical Output Characteristics

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN-SOURCE VOLTAGE (V)

DS

I, D

R

AIN

C

U

R

EN

T

(A)

D

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

V = 1.0V

GS

V = 1.5V

GS

V = 2.5V

GS

V = 4.5V

GS

V = 10V

GS

V = 3.0V

GS

Fig. 2 Typical Transfer Characteristics

V , GATE SOURCE VOLTAGE (V)

GS

I, D

R

AIN

C

U

R

EN

T

(A)

D

0

0.1

0.2

0.3

0.4

0.5

01 234

V = 10V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A

vCS : 4v 025. m‘ 0 momDOw ED u. 02 Co<><0 0="" pzmiidu="" uidow="" march="" 2012="" ©="" dmdes="" hvcuvpmaled="">

DMB53D0UV

Document number: DS31651 Rev. 7 - 2

4 of 7

www.diodes.com March 2012

DMB53D0UV

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN CURRENT (A)

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

1

10

0.001 0.01 0.1 1

V = 4.0V

GS

V= 2.5V

GS

I , DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

D

R

, D

R

AIN-S

O

U

R

C

E

O

N-

R

ESIS

T

AN

C

E ( )

DS(ON)

Ω

1

10

0 0.1 0.2 0.3 0.4 0.5

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

Fig. 5 On-Resistance Variation with Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

R , DRAIN-TO-SOURCE

RESISTANCE (NORMALIZED)

DS(ON)

V = 2.5V

I = 80mA

GS

D

V = 4V

I = 100mA

GS

D

0.4

Fig. 6 Typical Capacitance

0 5 10 15 20 25 30 35 40

V , DRAIN-SOURCE VOLTAGE (V)

DS

C

,

C

A

P

A

C

I

T

A

N

C

E (p

F

)

0

5

10

15

20

25

30

35

f = 1MHz

V = 0V

GS

C

iss

C

oss

C

rss

V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

0.5

0.6

0.7

0.8

0.9

1.0

1.1

I = 250µA

D

V , SOURCE-DRAIN VOLTAGE (V)

SD

I, S

O

U

R

C

E

C

U

R

E

N

T

(A)

S

Fig. 8 Diode Forward Voltage vs. Current

0.0001

0.001

0.01

0.1

1

0.1 0.3 0.5 0.7 0.9 1.1

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

F‘AT‘ON F‘ , POWER DC CURRENT G CO ECTOREM‘TTER ‘G \NEANDW‘DTH PRODUCT 1MH DMB53DOUV 5017 Document number 0531651 Rev 772 www.dlodes.com

DMB53D0UV

Document number: DS31651 Rev. 7 - 2

5 of 7

www.diodes.com March 2012

DMB53D0UV

-50 0 50 100 150

250

200

150

50

100

0

T , AMBIENT TEMPERATURE ( C)

Fig. 9 Derating Curve - Total Package Power Dissipation

A

°

P

,

P

O

WE

R

DISSI

P

A

T

I

O

N

(mW)

D

300

RC/W

θ

JA

°

= 500

NPN Transistor

1

10

100

1,000

10 100 1,000

1

h D

C

U

R

EN

T

G

AIN

FE,

I , COLLECTOR CURRENT (mA)

Fig. 10 Typical DC Current Gain vs. Collector Current

C

T = 25C

A

°

T = -50C

A

°

T = 150 C

A

°

10.1 10 100 1,000

V,

C

O

LLE

C

T

O

R

-EMI

T

E

R

SATURATION VOLTAGE (V)

CE(SAT)

I , COLLECTOR CURRENT (mA)

Fig. 11 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

C

T = 25°C

A

T = -50°C

A

T = 150°C

A

0

0.1

0.2

0.3

0.4

I

C

B

= 20

1

100

10

1,000

110100

f,

G

AI

N

-BA

N

DWID

T

H

P

R

O

D

U

C

T

(M

H

z)

T

I , COLLECTOR CURRENT (mA)

Fig. 12 Typical Gain-Bandwidth Product

vs. Collector Current

C

V = 5V

CE

1 _L i\% a\ % |+ T |+ +|+ +| T T 4- + + + J— 'Inl DMB53DOUV 6047 Document number 0531651 Rev 772 www.diodes.com

DMB53D0UV

Document number: DS31651 Rev. 7 - 2

6 of 7

www.diodes.com March 2012

DMB53D0UV

Package Outline Dimensions

Suggested Pad Layout

SOT563

Dim Min Max Typ

A 0.15 0.30 0.20

B 1.10 1.25 1.20

C 1.55 1.70 1.60

D - - 0.50

G 0.90 1.10 1.00

H 1.50 1.70 1.60

K 0.55 0.60 0.60

L 0.10 0.30 0.20

M 0.10 0.18 0.11

All Dimensions in mm

Dimensions Value (in mm)

Z 2.2

G 1.2

X 0.375

Y 0.5

C1 1.7

C2 0.5

A

M

L

BC

H

K

G

D

X

Z

Y

C1

C2

G

DMB53D0UV

Document number: DS31651 Rev. 7 - 2

7 of 7

www.diodes.com March 2012

DMB53D0UV

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

DMB53D0UV Datasheet by Diodes Incorporated

Products related to this Datasheet