IXT(H,V)110N25T(S) Datasheet by IXYS

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© 2015 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 250 V
VDGR TJ= 25C to 150C, RGS = 1M 250 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C 110 A
IDM TC= 25C, Pulse Width Limited by TJM 300 A
IATC= 25C 25 A
EAS TC= 25C 1 J
PDTC= 25C 694 W
dv/dt IS IDM, VDD VDSS, TJ 150°C 10 V/ns
TJ -55 to +150 C
TJM +150 C
Tstg -55 to +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque (TO-247) 1.13/10 Nm/lb.in
FCMounting force (PLUS220SMD) 11..65/2.5..14.6 N/lb
Weight TO-247 6 g
PLUS220SMD 4 g
TrenchTM
Power MOSFET
IXTH110N25T
IXTV110N25TS
DS99904C(5/15)
VDSS = 250V
ID25 = 110A
RDS(on)
26m
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Features
International Standard Packages
Avalanche Rated
High Current Handling Capability
Fast Intrinsic Rectifier
Low RDS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 250 V
VGS(th) VDS = VGS, ID = 1mA 3.0 5.0 V
IGSS VGS = 20V, VDS = 0V 200 nA
IDSS VDS = VDSS, VGS = 0V 5 A
TJ = 125C 250 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 26 m
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXTH)
G
S
D
PLUS220SMD(IXTV_S)
D (Tab)
D (Tab)
G
S
E 15751626 610 640 L1 450 177 Q) 0 509 640 0232 0252 am A A1 A INCHES .029 .551 .33: MAX 035 591 345 .euuasc us .047 .039 135 059 059 MILLIMETER M N MAX 0‘70 090 14 00 1500 7 340 820 503 ESE 1S0 ASE |50
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH110N25T
IXTV110N25TS
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 65 110 S
Ciss 9400 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 850 pF
Crss 55 pF
td(on) 19 ns
tr 27 ns
td(off) 60 ns
tf 27 ns
Qg(on) 157 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 25A 40 nC
Qgd 50 nC
RthJC 0.18 C/W
RthCS 0.25 C/W
Notes:
1. Pulse test, t 300s, duty cycle, d 2%.
2. On through-hole package, RDS(ON) kelvin test contact location must be
5mm or less from the package body.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 (External)
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 110 A
ISM Repetitive, Pulse Width Limited by TJM 350 A
VSD IF = 55A, VGS = 0V, Note 1 1.2 V
trr 170 ns
IRM 27 A
QRM 2.3 μC
IF = 55A, -di/dt = 250A/s,
VR = 100V, VGS = 0V
PLUS220SMD Outline
TO-247 Outline
Terminals: 1 - Gate 2 - Drain
3 - Source
e
P
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals: 1 - Gate 2,4 - Drain
3 - Source
\ ‘ “V 23 7v so sv g 24 g i m E 20 a. so a 3 z ‘D s *6 - 40 g 5v a: ‘2 2o / as / o 04 o 1 a 4 750 VDS-Volts 3“ 4:5 E 26 g 22 Z / g 16 n: m m ,7 06 o © 2015 \XVS CORPOHA‘HON‘ AH ngms Reserved
© 2015 IXYS CORPORATION, All Rights Reserved
IXTH110N25T
IXTV110N25TS
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
20
40
60
80
100
0 0.4 0.8 1.2 1.6 2 2.4 2.8
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
5.5V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
50
100
150
200
250
0 2 4 6 8 101214161820
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
5V
6V
7V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0
20
40
60
80
100
0123456
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 55A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 110A
I
D
= 55A
Fig. 5. R
DS(on)
Normalized to I
D
= 55A Value vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
0 50 100 150 200 250
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 6. Drain Current vs. Case Temperature
0
20
40
60
80
100
120
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
250 200 ls-Amperes mo 50 04 05 as 07 as 09 m H <2 13="" vsd-vohs="" v63="" a="" vows="" va5="" reserves="" the="" ngm="" to="" change="" mems,="" test="" commons="" and="" dxmensmns.="">
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH110N25T
IXTV110N25TS
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
3.43.84.24.65.05.45.86.2
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
180
0 20 40 60 80 100 120 140 160
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
25
o
C
125
o
C
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 125V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
I y A Nanosecnnds // H TJ - Degrees Cenugrade Flg. 15. Resistive Tum-on Swilchin Gale Resistance n:125“c. VG :15V Ir-Nanoseconds Fig. 17. Resislive Tum-OH Swilchin Drain Current 14 — Mimi)- -Nanoseconds 3| (ump‘ 23 spuaaesaueN- 21 19 (HOW. ea spuaoasauENA 50 40 120 h A Nanoseconds h - Nanoseconds h - Namseconds so 70 so an m 5A mm \\\\\ © 2015 IXVS CORPOHA‘HON‘ AH Rigms Reserved \\\ \ \’
© 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: T_110N25T(8W)5-14-12-B
IXTH110N25T
IXTV110N25TS
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
18
20
22
24
26
28
30
32
20 30 40 50 60 70 80 90 100 110 120
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 125
o
C
T
J
= 25
o
C
R
G
= 2Ω , V
GS
= 15V
V
DS
= 125V
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
20
25
30
35
40
45
50
2345678910
R
G
- Ohms
t
r
- Nanoseconds
19
21
23
25
27
29
31
t
d
(
o n
)
- Nanoseconds
t
r
t
d(on)
T
J
= 125
o
C, V
GS
= 15V
V
DS
= 125V
I
D
= 110A, 55A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
14
18
22
26
30
34
38
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
50
54
58
62
66
70
74
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
R
G
= 2Ω, V
GS
= 15V
V
DS
= 125V
I
D
= 55A
I
D
= 110A
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
20
22
24
26
28
30
32
20 30 40 50 60 70 80 90 100 110 120
I
D
- Amperes
t
f
- Nanoseconds
40
50
60
70
80
90
100
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
R
G
= 2Ω, V
GS
= 15V
V
DS
= 125V
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
10
30
50
70
90
110
2345678910
R
G
- Ohms
t
f
- Nanoseconds
40
80
120
160
200
240
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
T
J
= 125
o
C, V
GS
= 15V
V
DS
= 125V
I
D
= 55A, 110A
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
20
22
24
26
28
30
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 2Ω , V
GS
= 15V
V
DS
= 125V
I
D
= 55A
I
D
= 110A
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