Si4114DY Datasheet by Vishay Siliconix

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— VISHAYN V RoHS Cowmm HALOGEN FREE m w. HHHH LILIULI m
Vishay Siliconix
Si4114DY
New Product
Document Number: 68394
S09-0764-Rev. B, 04-May-09
www.vishay.com
1
N-Channel 20-V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Low-Side MOSFET for Synchronous Buck
- Game Machine
- PC
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)ID (A)aQg (Typ.)
20
0.006 at VGS = 10 V 20e
27.5 nC
0.007 at VGS = 4.5 V 20e
SO-8
SD
SD
SD
GD
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4114DY
-T1-E3
(Lead (Pb)-free)
Si4114DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET
G
D
S
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
e. Package limited.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ± 16
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
20e
A
TC = 70 °C 18.2
TA = 25 °C 15.2b, c
TA = 70 °C 12.1b, c
Pulsed Drain Current IDM 50
Continuous Source-Drain Diode Current TC = 25 °C IS
5.1
TA = 25 °C 2.2b, c
Single Pulse Avalanche Current L = 0.1 mH IAS 30
Avalanche Energy EAS 45 mJ
Maximum Power Dissipation
TC = 25 °C
PD
5.7
W
TC = 70 °C 3.6
TA = 25 °C 2.5b, c
TA = 70 °C 1.6b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d t 10 s RthJA 39 50 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 18 22
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Document Number: 68394
S09-0764-Rev. B, 04-May-09
Vishay Siliconix
Si4114DY
New Product
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V
VDS Temperature Coefficient ΔVDS/TJID = 250 µA 19 mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ- 5.3
Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.0 2.1 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 16 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 20 V, VGS = 0 V 1µA
VDS = 20 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain CurrentaID(on) V
DS 5 V, VGS = 10 V 30 A
Drain-Source On-State ResistanceaRDS(on)
VGS = 10 V, ID = 10 A 0.0049 0.006 Ω
VGS = 4.5 V, ID = 7 A 0.0056 0.007
Forward Transconductanceagfs VDS = 10 V, ID = 10 A 55 S
Dynamicb
Input Capacitance Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
3700
pFOutput Capacitance Coss 745
Reverse Transfer Capacitance Crss 315
Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 10 A 62 95
nC
VDS = 10 V, VGS = 4.5 V, ID = 10 A
27.5 42
Gate-Source Charge Qgs 8.0
Gate-Drain Charge Qgd 6.0
Gate Resistance Rgf = 1 MHz 0.15 0.7 1.4 Ω
Tur n - O n D e l ay Time td(on)
VDD = 10 V, RL = 2 Ω
ID 5 A, VGEN = 4.5 V, Rg = 1 Ω
30 55
ns
Rise Time tr 13 25
Turn-Off Delay Time td(off) 60 100
Fall Time tf30 55
Tur n - O n D e l ay Time td(on)
VDD = 10 V, RL = 2 Ω
ID 5 A, VGEN = 10 V, Rg = 1 Ω
13 25
Rise Time tr 918
Turn-Off Delay Time td(off) 38 65
Fall Time tf816
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C 5.1 A
Pulse Diode Forward CurrentaISM 50
Body Diode Voltage VSD IS = 2 A 0.71 1.1 V
Body Diode Reverse Recovery Time trr
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
26 50 ns
Body Diode Reverse Recovery Charge Qrr 16 30 nC
Reverse Recovery Fall Time ta13 ns
Reverse Recovery Rise Time tb13
— VISHAY. //
Document Number: 68394
S09-0764-Rev. B, 04-May-09
www.vishay.com
3
Vishay Siliconix
Si4114DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5
VGS =2V
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
VGS = 10 V thru 3 V
0.0040
0.0046
0.0052
0.0058
0.0064
0.0070
0 1020304050
VGS = 10 V
VGS = 4.5 V
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
0
2
4
6
8
10
0 1326395265
ID=10A
VDS =15V
VDS =10V
VDS =5V
VGS - Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.6
1.2
1.8
2.4
3.0
0.0 0.81.6 2.4 3.2 4.0
TC= 25 °C
TC= 125 °C
TC= - 55 °C
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Crss
0
900
1800
2700
3600
4500
04812 16 20
Ciss
Coss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.7
0.9
1.1
1.3
1.5
- 50 - 25 0 25 50 75 100 125 150
VGS =4.5V
ID=10A
VGS = 10 V
1.7
RDS(on) - On-Resistance
(Normalized)
TJ - Junction Temperature (°C)
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Document Number: 68394
S09-0764-Rev. B, 04-May-09
Vishay Siliconix
Si4114DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.81.0 1.2
1
0.01
0.001
0.1
10
100
VSD - Source-to-Drain Voltage (V)
IS - Source Current (A)
TJ = 150 °C
TJ = 25 °C
- 0.9
- 0.6
- 0.3
0.0
0.3
0.6
- 50 - 25 0 25 50 75 100 125 150
ID= 250 µA
ID=5mA
TJ - Junction Temperature (°C)
VGS(th) - Variance (V)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.01
0.02
0.03
0.04
0.05
0246810
TJ= 25 °C
TJ= 125 °C
ID=10A
VGS - Gate-to-Source Voltage (V)
RDS(on) - On-Resistance (Ω)
0
34
68
102
136
170
011100.0 0.01 0.1
Power (W)
Time (s)
Safe Operating Area, Junction-to-Ambient
0.01 0.1 1 10
100
1
100
0.01
0.1
10 1ms
10 ms
100 ms
1s
DC
10 s
BVDSS
VDS - Drain-to-Source Voltage (V)
* VDS > minimum VGS at which RDS(on) is specified
ID - Drain Current (A)
Limited by RDS(on)*
TA = 25 °C
Single Pulse
— VISHAY. V
Document Number: 68394
S09-0764-Rev. B, 04-May-09
www.vishay.com
5
Vishay Siliconix
Si4114DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
5
10
15
20
25
0 25 50 75 100 125 150
TC - Case Temperature (°C)
ID - Drain Current (A)
Power, Junction-to-Foot
0.0
1.4
2.8
4.2
5.6
7.0
0 25 50 75 100 125 150
Power (W)
TC - Case Temperature (°C)
Power, Junction-to-Ambient
0.00
0.36
0.72
1.08
1.44
1.80
0 25 50 75 100 125 150
Power (W)
TA - Ambient Temperature (°C)
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Document Number: 68394
S09-0764-Rev. B, 04-May-09
Vishay Siliconix
Si4114DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68394.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 110 100010-1
10-4 100
0.2
0.1
0.05
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA =8C/W
3. TJM -T
A=P
DMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
0.02
Normalized Thermal Transient Impedance, Junction-to-Foot
10-3 10-2 01110-1
10-4
0.2
0.1
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
0.02
0.05
— VISHAYm V HRH |-——-|
Vishay Siliconix
Package Information
Document Number: 71192
11-Sep-06
www.vishay.com
1
DIM
MILLIMETERS INCHES
Min Max Min Max
A 1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q0°8°0°8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
4
3
12
5
6
87
HE
h x 45
C
All Leads
q0.101 mm
0.004"
L
BA
1
A
e
D
0.25 mm (Gage Plane)
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
S
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR 50-8 0172 (A 359} n 246 (a 248) Recommended Mwmmum Pads Dwmensmns m Inches/(mm) VISHAY» Docmem Number 72606 Re w 2‘ rJaurOB
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72606
22 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-8
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.172
(4.369)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
Return to Index
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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