Features
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
l 01: PNP ERT, R1: R2 = ll] k
' QZ: PNP
Th t
s a PbrFrCc Dcvicc
Applications
- Logic Switching
- Amplification
l Drivcr Circuits
l Interface Circuits
MAXIMUM RATINGS
t'rA : 25°C unless otnenmse noted)
Hallng — at (PNP ERT) Symbol Value Unit
Collector-Base Voltage vCED -50 Vdc
Collector-Emitter Voltage vCED -50 Vdc
Collector Current lo 4 oo mAdc
natlrrg — (:2 (PM?) Symbol Value Unit
Collector — aase Voltage vremao -30 Vdc
Collector — Emitter Voltage vremgo -65 Vdc
Emitter — Base Voltage v“WEED — 5 o Vdc
Collector Current — Continuous lo 400 mAdc
0N Semitmntluctot'®
Stresses exceeding Maximum Ratings may damage the device Maximum
Ratings are stress ratings only Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may aflect device reliability.
o Semiconduclmcampcneuls Induslrles tic 2mm 1
March, 2mm — Rev. 0
© Semiconductor Components Industries, LLC, 2008
March, 2008 - Rev. 0
1Publication Order Number:
NSM11156DW6/D
NSM11156DW6T1G
Dual PNP Transistors
General Purpose PNP Transistor and
PNP Transistor with Monolithic Bias
Network
NSM11156DW6T1G contains a single PNP transistor and a
monolithic bias network PNP transistor with two resistors; a series
base resistor and a base-emitter resistor. This device is designed to
replace multiple transistors and resistors on customer boards by
integrating these components into a single device.
NSM11156DW6T1G is housed in a SC-88/SOT-363 package which
is ideal for low power surface mount applications in space constrained
applications.
Features
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•Q1: PNP BRT, R1 = R2 = 10 k
•Q2: PNP
•This is a Pb-Free Device
Applications
•Logic Switching
•Amplification
•Driver Circuits
•Interface Circuits
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Rating - Q1 (PNP BRT) Symbol Value Unit
Collector‐Base Voltage VCBO -50 Vdc
Collector‐Emitter Voltage VCEO -50 Vdc
Collector Current IC-100 mAdc
Rating - Q2 (PNP) Symbol Value Unit
Collector - Base Voltage V(BR)CBO -80 Vdc
Collector - Emitter Voltage V(BR)CEO -65 Vdc
Emitter - Base Voltage V(BR)EBO -5.0 Vdc
Collector Current - Continuous IC-100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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Q1
R1
R2
Q2
(1)(2)(3)
(4) (5) (6)
SC-88/SOT-363
CASE 419B
STYLE 1
1
6
MARKING DIAGRAM
N6 M G
G
1
6
N6 = Device Code
M = Date Code*
G= Pb-Free Package
(Note: Microdot may be in either location)
Device Package Shipping†
ORDERING INFORMATION
NSM11156DW6T1G SC-88
(Pb-Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*Date Code orientation and/or position may vary
depending upon manufacturing location.
Tm Ts“)
NSM11156DW6T1G
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2
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
180 (Note 1)
1.44 (Note 1)
mW
mW/°C
Thermal Resistance, Junction‐to‐Ambient RqJA 692 (Note 1) °C/W
Characteristic (Both Junctions Heated) Symbol Max Unit
Total Device Dissipation,
TA = 25°C
Derate above 25°C
PD
230
1.83
mW
mW/°C
Thermal Resistance, Junction‐to‐Ambient RqJA 544 °C/W
Junction and Storage Temperature TJ, Tstg -55 to +150 °C
1. FR-4 @ Minimum Pad of 1.45 mm2, 1 oz Cu.
ELECTRICAL CHARACTERISTICS - Q1 (PNP BRT) (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector‐Base Cutoff Current
(VCB = -50 V, IE = 0)
ICBO - - -100 nAdc
Collector‐Emitter Cutoff Current
(VCE = -50 V, IB = 0)
ICEO - - -500 nAdc
Emitter‐Base Cutoff Current
(VEB = -6.0 V, IC = 0)
IEBO - - -0.5 mAdc
Collector‐Base Breakdown Voltage
(IC = -10 mA, IE = 0)
V(BR)CBO -50 - - Vdc
Collector‐Emitter Breakdown Voltage (Note 2)
(IC = -2.0 mA, IB = 0)
V(BR)CEO -50 - - Vdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(VCE = -10 V, IC = -5.0 mA)
hFE 35 60 -
Collector‐Emitter Saturation Voltage
(IC = -10 mA, IB = -0.3 mA)
VCE(sat) - - -0.25 Vdc
Output Voltage (on)
(VCC = -5.0 V, VB = -2.5 V, RL = 1.0 kW)
VOL - - -0.2 Vdc
Output Voltage (off)
(VCC = -5.0 V, VB = -0.5 V, RL = 1.0 kW)
VOH -4.9 - - Vdc
Input Resistor R1 7.0 10 13 kW
Resistor Ratio R1/R2 0.8 1.0 1.2
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
NSM11156DW6T1G
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3
ELECTRICAL CHARACTERISTICS - Q2 (PNP) (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = -10 mA)
V(BR)CEO -65 - - V
Collector-Emitter Breakdown Voltage
(IC = -10 mA, VEB = 0)
V(BR)CES -80 - - V
Collector-Base Breakdown Voltage
(IC = -10 mA)
V(BR)CBO -80 - - V
Emitter-Base Breakdown Voltage
(IE = -1.0 mA)
V(BR)EBO -5.0 - - V
Collector Cutoff Current (VCB = -30 V)
Collector Cutoff Current (VCB = -30 V, TA = 150°C)
ICBO -
-
-
-
-15
-4.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = -10 mA, VCE = -5.0 V)
(IC = -2.0 mA, VCE = -5.0 V)
hFE
-
220
150
290
-
475
-
Collector-Emitter Saturation Voltage
(IC = -10 mA, IB = -0.5 mA)
(IC = -100 mA, IB = -5.0 mA)
VCE(sat)
-
-
-
-
-0.3
-0.65
V
Base-Emitter Saturation Voltage
(IC = -10 mA, IB = -0.5 mA)
(IC = -100 mA, IB = -5.0 mA)
VBE(sat)
-
-
-0.7
-0.9
-
-
V
Base-Emitter On Voltage
(IC = -2.0 mA, VCE = -5.0 V)
(IC = -10 mA, VCE = -5.0 V)
VBE(on)
-0.6
-
-
-
-0.75
-0.82
V
Figure 1. Derating Curve
300
200
150
100
50
0
-50 0 50 100 150
TA, AMBIENT TEMPERATURE (°C)
RqJA = 833°C/W
250
PD, POWER DISSIPATION (mW)
in?
NSM11156DW6T1G
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4
PACKAGE DIMENSIONS
SC-88 (SOT-363)
CASE 419B-02
ISSUE V
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
ǒmm
inchesǓ
SCALE 20:1
0.65
0.025
0.65
0.025
0.50
0.0197
0.40
0.0157
1.9
0.0748
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B-01 OBSOLETE, NEW STANDARD 419B-02.
E0.2 (0.008) MM
123
D
e
A1
A
A3
C
L
654
-E-
b6 PL
DIM MIN NOM MAX
MILLIMETERS
A0.80 0.95 1.10
A1 0.00 0.05 0.10
A3
b0.10 0.21 0.30
C0.10 0.14 0.25
D1.80 2.00 2.20
0.031 0.037 0.043
0.000 0.002 0.004
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.20 REF 0.008 REF
HE
HE
E1.15 1.25 1.35
e0.65 BSC
L0.10 0.20 0.30
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
NSM11156DW6/D
PUBLICATION ORDERING INFORMATION
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Phone: 421 33 790 2910
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