APTGT600A60G Datasheet by Microchip Technology

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OMicrosemll POWER PRODUCTS GROUP vEus Q G ()44~44** 2Z3 OUT 02 62 (>44444* 2Z3 E2 , \/ mvaus unlrafings Symbol Parameter Max ratings Unit \n l 5 , Emmer Breakdown Voltage T( , 25°C , C ll 1 -C - 1 US 0 ea 01 men T( 7 80°C K M Collecmr Current T( , 25°C \Qvl mmer Volmge m Power Dlsslpauon T( 7 25°C Bias Safe Operalmg Area Tr 150°C 1200 T deuce hm omput cuncnt musl be lumlcd 10 500A m not nectors. f5; CAUTION:
APTGT600A60G
APTGT600A60G – Rev 3 October, 2012
www.microsemi.com 1-6
Absolute maximum ratings
* Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature greater
than 100°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Q2
0/VBUS
Q1
VBUS
OUT
G1
G2
E2
E1
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 600 V
TC = 25°C 700 *
IC Continuous Collector Current TC = 80°C 600 *
ICM Pulsed Collector Current TC = 25°C 800
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 2300 W
RBSOA Reverse Bias Safe Operating Area Tj = 150°C 1200A @ 550V
VCES = 600V
IC = 600A* @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Phase leg
Trench + Field Stop IGBT3
Power Module
OMicmsemll POWER PRODUCTS GROUP
APTGT600A60G
APTGT600A60G – Rev 3 October, 2012
www.microsemi.com 2-6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 600V 750 µA
Tj = 25°C 1.4 1.8
VCE(sat) Collector Emitter Saturation Voltage VGE =15V
IC = 600A Tj = 150°C 1.5 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 2mA 5.0 5.8 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 800 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 49
Coes Output Capacitance 3.1
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 1.5
nF
Td(on) Turn-on Delay Time 130
Tr Rise Time 55
Td(off) Turn-off Delay Time 250
Tf Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 600A
RG = 1 60
ns
Td(on) Turn-on Delay Time 145
Tr Rise Time 60
Td(off) Turn-off Delay Time 320
Tf Fall Time
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 600A
RG = 1 80
ns
Tj = 25°C 3
Eon Turn on Energy Tj = 150°C 5.5 mJ
Tj = 25°C 17
Eoff Turn off Energy
VGE = ±15V
VBus = 300V
IC = 600A
RG = 1 Tj = 150°C 21 mJ
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 600 V
Tj = 25°C 350
IRM Maximum Reverse Leakage Current VR=600V Tj = 150°C 550 µA
IF DC Forward Current Tc = 80°C 600 A
Tj = 25°C 1.5 1.9
VF Diode Forward Voltage IF = 600A
VGE = 0V Tj = 150°C 1.4 V
Tj = 25°C 120
trr Reverse Recovery Time Tj = 150°C 210 ns
Tj = 25°C 27
Qrr Reverse Recovery Charge Tj = 150°C 57 µC
Tj = 25°C 6.9
Er Reverse Recovery Energy
IF = 600A
VR = 300V
di/dt =5000A/µs
Tj = 150°C 14.1 mJ
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APTGT600A60G
APTGT600A60G – Rev 3 October, 2012
www.microsemi.com 3-6
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.065
RthJC Junction to Case Thermal Resistance Diode 0.11
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V
TJ Operating junction temperature range -40 175
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
To heatsink M6 3 5
Torque Mounting torque For terminals M5 2 3.5 N.m
Wt Package Weight 300 g
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
OMicrosemll POWER PRODUCTS GROUP 1200 1000 1000 :I 300 800 7 7 7 77777 5 3 .0 500 _0 600 7 7 7 400 400 7 7 200 200 7 7 7 7 7 7 1 :25'0 0 0 o 0 5 1 1 5 2 2 5 0 VcE ND 40 35 so : 25 S” E 20 _ M 15 1o 5 o o 40 30 q E 20 w 10 a 400 m 200 0 0 0 1 2 a 4 5 s 0 Gale Resislance (ohms) E 0 0e 9 E 0 05 E 0 04 S E 0 03 E 0 02 g 0 01 ,. SW12 Mse 10 0 000001 00001 0001 001 01 1 Reclangular Pulse Duration in Seconds www
APTGT600A60G
APTGT600A60G – Rev 3 October, 2012
www.microsemi.com 4-6
Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=25°C
TJ=125°C
TJ=150°C
0
200
400
600
800
1000
1200
00.511.522.5
VCE (V)
IC (A)
Output Characteristics
VGE=15V
VGE=13V
VGE=19V
VGE=9V
0
200
400
600
800
1000
1200
00.511.522.533.5
VCE (V)
IC (A)
TJ = 150°C
Transfert Characteristics
TJ=25°C
TJ=25°C
TJ=125°C
TJ=150°C
0
200
400
600
800
1000
1200
567891011
VGE (V)
IC (A)
Energy losses vs Collector Current
Eon
Eoff
Er
0
5
10
15
20
25
30
35
40
0 200 400 600 800 1000 1200
IC (A)
E (mJ)
VCE = 300V
VGE = 15V
RG = 1Ω
TJ = 150°C
Eon
Eon
Eoff
Er
0
10
20
30
40
0123456
Gate Resistance (ohms)
E (mJ)
VCE = 300V
VGE =15V
IC = 600A
TJ = 150°C
Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area
0
200
400
600
800
1000
1200
1400
0 100 200 300 400 500 600 700
VCE (V)
IC (A)
VGE=15V
TJ=150°C
RG=1Ω
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration in Seconds
Thermal Impedance (°C/W)
IGBT
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APTGT600A60G
APTGT600A60G – Rev 3 October, 2012
www.microsemi.com 5-6
Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ=150°C
0
200
400
600
800
1000
1200
0 0.4 0.8 1.2 1.6 2
VF (V)
IF (A)
Hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
0 200 400 600 800 1000
IC (A)
Fmax, Operating Frequency (kHz)
VCE=300V
D=50%
RG=1Ω
TJ=150°C
Tc=85°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration in Seconds
Thermal Impedance (°C/W)
Diode
OMicrosemll POWER PRODUCTS GROUP DISCLAIMER Ln‘e Supporl Amghcauon
APTGT600A60G
APTGT600A60G – Rev 3 October, 2012
www.microsemi.com 6-6
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