OMicrosemll
POWER PRODUCTS GROUP
C1 C2
Q2
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imum ratings
Parameter [Wax
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Conunuom Collector Cm'renl T‘ 7 25°C
> T( , 80°C
( M Collecmr Current T( 7 25°C
Vm , Emmer Volmge
mum Power D|ssxpauon TK , 25°C
Se Bias Safe Operalmg Area Tx’ 125°C 400A
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APTGT200DU120G
APTGT200DU120G – Rev 2 October, 2012
www.microsemi.com 1-6
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Q2
E
Q1
C1 C2
E2
G2
E1
G1
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1200 V
TC = 25°C 280
IC Continuous Collector Current TC = 80°C 200
ICM Pulsed Collector Current TC = 25°C 400
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 890 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 400A @ 1100V
VCES = 1200V
IC = 200A @ Tc = 80°C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Fast Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Dual common source
Fast Trench + Field Stop IGBT3
Power Module
OMicmsemll
POWER PRODUCTS GROUP
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APTGT200DU120G
APTGT200DU120G – Rev 2 October, 2012
www.microsemi.com 2-6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 350 µA
Tj = 25°C 1.4 1.7 2.1
VCE(sat) Collector Emitter Saturation Voltage VGE =15V
IC = 200A Tj = 125°C 2.0 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 3 mA 5.0 5.8 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 500 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 14
Coes Output Capacitance 0.8
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 0.6
nF
Td(on) Turn-on Delay Time 260
Tr Rise Time 30
Td(off) Turn-off Delay Time 420
Tf Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 200A
RG = 2.7 70
ns
Td(on) Turn-on Delay Time 290
Tr Rise Time 50
Td(off) Turn-off Delay Time 520
Tf Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 200A
RG = 2.7 90
ns
Eon Turn on Energy Tj = 125°C 20
Eoff Turn off Energy
VGE = ±15V
VBus = 600V
IC = 200A
RG = 2.7 Tj = 125°C 20
mJ
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1200 V
Tj = 25°C 350
IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 600 µA
IF DC Forward Current Tc = 80°C 200 A
Tj = 25°C 1.6 2.1
VF Diode Forward Voltage IF = 200A
VGE = 0V Tj = 125°C 1.6 V
Tj = 25°C 170
trr Reverse Recovery Time
Tj = 125°C 280
ns
Tj = 25°C 18
Qrr Reverse Recovery Charge Tj = 125°C 36 µC
Tj = 25°C 10
Er Reverse Recovery Energy
IF = 200A
VR = 600V
di/dt =2500A/µs
Tj = 125°C 18 mJ
OMicrosemi,
POWER PRODUCTS GROUP
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APTGT200DU120G
APTGT200DU120G – Rev 2 October, 2012
www.microsemi.com 3-6
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.14
RthJC Junction to Case Thermal Resistance Diode 0.25
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
To heatsink M6 3 5
Torque Mounting torque For terminals M5 2 3.5 N.m
Wt Package Weight 300 g
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
OMicrosemll
POWER PRODUCTS GROUP
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Gate Resistance (ohms)
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APTGT200DU120G
APTGT200DU120G – Rev 2 October, 2012
www.microsemi.com 4-6
Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
100
200
300
400
01234
VCE (V)
IC (A)
Output Characteristics
VGE=15V
VGE=13V
VGE=17V
VGE=9V
0
100
200
300
400
01234
VCE (V)
IC (A)
TJ = 125°C
Transfert Characteristics
TJ=25°C
TJ=125°C
TJ=125°C
0
50
100
150
200
250
300
350
400
5 6 7 8 9 101112
VGE (V)
IC (A)
Energy losses vs Collector Current
Eon
Eon
Eoff
Er
0
10
20
30
40
50
0 50 100 150 200 250 300 350 400
IC (A)
E (mJ)
VCE = 600V
VGE = 15V
RG = 2.7Ω
TJ = 125°C
Eon
Eoff
Er
0
10
20
30
40
50
0 4 8 12 16 20
Gate Resistance (ohms)
E (mJ)
VCE = 600V
VGE =15V
IC = 200A
TJ = 125°C
Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area
0
50
100
150
200
250
300
350
400
450
0 300 600 900 1200 1500
VCE (V)
IF (A)
VGE=15V
TJ=125°C
RG=2.7 Ω
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
IGBT
O
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Fmax, Oper
as (”on”)
Microsemi
POWER PRODUCTS GROUP
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APTGT200D
400
350
300
250
200
1 50
100
50
Forward Charamerislic of
04 08 12 16
40 an 120 160 200 240 280
IcW V; M
maximum Effective Transienl Thermal Impedance, Junc1inn In Case vs Pulse Dur '
in 9
u 7
APTGT200DU120G
APTGT200DU120G – Rev 2 October, 2012
www.microsemi.com 5-6
Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ=125°C
0
50
100
150
200
250
300
350
400
0 0.4 0.8 1.2 1.6 2 2.4
VF (V)
IF (A)
Hard
switching
ZCS
ZVS
0
10
20
30
40
50
60
0 40 80 120 160 200 240 280
IC (A)
Fmax, Operating Frequency (kHz)
VCE=600V
D=50%
RG=2.7Ω
TJ=125°C
Tc=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Diode
OMicrosemll
POWER PRODUCTS GROUP
DISCLAIMER
Ln‘e Supporl Applicauon
APTGT200DU120G
APTGT200DU120G – Rev 2 October, 2012
www.microsemi.com 6-6
DISCLAIMER
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Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
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Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
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