MCC21-16IO8B Datasheet by IXYS

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Phase leg N E72873
MCC21-16io8B
Phase leg
Thyristor Module
3 1 2
6 5
Part number
MCC21-16io8B
Backside: isolated
TAV
T
V V1.52
RRM
21
1600
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
Thyristor for line frequency
Planar passivated chip
Long-term stability
Direct Copper Bonded Al2O3-ceramic
Line rectifying 50/60 Hz
Softstart AC motor control
DC Motor control
Power converter
AC power control
Lighting and temperature control
TO-240AA
Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Base plate: DCB ceramic
Reduced weight
Advanced power cycling
Isolation Voltage: V~
3600
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions. 20161222cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
L-I IXYS MCCZ1-16io8B Symbol Delinikion Condikions min. lyp. max. iUniI
MCC21-16io8B
V = V
A²s
A²s
A²s
A²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.45
R1.1 K/W
min.
21
VV
100T = 25°C
VJ
T = °C
VJ
mA5V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
90 WT = 25°C
C
45
1600
forward voltage drop
total power dissipation
Unit
1.89
T = 25°C
VJ
125
V
T0
V0.85T = °C
VJ
125
r
T
15 m
V1.52T = °C
VJ
I = A
T
V
45
2.20
I = A90
I = A90
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1600T = 25°C
VJ
IA33
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
125
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
22
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
125
I²t T = 45°C
value for fusing
T = °C125
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
125
320
345
365
360
A
A
A
A
270
295
510
495
1600
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 125 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 125°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
45 A
T
P
G
= 0.45
di /dt A/µs;
G
=0.45
DRM
cr
V = V
DRM
GK
1000
1 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
65 mA
T = °C-40
VJ
1.2 V
80 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
5 mA
V = V
D DRM
125
latching current
T = °C
VJ
150 mA
I
L
25t µs
p
= 10
I A;
G
= 0.3 di /dt A/µs
G
= 0.3
holding current
T = °C
VJ
100 mA
I
H
25V = 6 V
D
R =
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.3 di /dt A/µs
G
= 0.3
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 15 V = V
DRM
tµs
p
= 300
non-repet., I = 21 A
T
100
R
thCH
thermal resistance case to heatsink
K/W
Thyristor
1700
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.20
IXYS reserves the right to change limits, conditions and dimensions. 20161222cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
IXYS MCCZ1-16io8B T0-240AA Symbol Delinikion Condifions min. lyp. max. iUni! EIXYS w \CWW‘ T ename _ ,yyypwa unluzun Data base
MCC21-16io8B
Ratings
MCMA35P1600TA TO-240AA-1B 1600
Package
T
op
°C
M
D
Nm4
mounting torque
2.5
T
VJ
°C125
virtual junction temperature
-40
Weight g81
Symbol
Definition
typ.
max.
min.
operation temperature
Unit
M
T
Nm4
terminal torque
2.5
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
13.0 9.7
16.0 16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
200 A
per terminal
100-40
terminal to terminal
TO-240AA
Similar Part Package Voltage class
MCMA25P1600TA TO-240AA-1B 1600
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I 1 mA
ISOL
MCC21-16io8B 477338Box 36MCC21-16io8BStandard
3600
ISOL
T
stg
°C125
storage temperature
-40
3000
threshold voltage
V0.85
m
V
0 max
R
0 max
slope resistance *
13.8
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
125 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20161222cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
L-I IXYS MCC21-1eiosB M5x10 /2.8/O.8 T 10 f o I I L0 L9? '0‘) m * ' E : I- g :1.’ N l 2. j m + 35.5 65 «20% | @N 00 54 7g; f‘\ ‘1 +138<—>
MCC21-16io8B
3 1 2
6 5
Outlines TO-240AA
IXYS reserves the right to change limits, conditions and dimensions. 20161222cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
L-I IXYS MCCZ1-16iosB
MCC21-16io8B
Fig. 1 Gate trigger characteristics
V
G
[V]
I
G
[mA]
P
GM
= 10 W; t
P
= 30 µs
P
GM
= 1 W; t
P
= 300 µs
P
GAV
= 0.5 W
-40°C
25°C (upper
125°C limit)
125°C 25°C
(lower limit)
10
1
0
0.1 1 10 100 1000 10000
Fig. 2 Gate trigger delay time
t
gd
[µs]
I
G
[A]
10
-2
10
-1
10
0
10
1
10
0
10
-1
10
1
10
2
lim.
typ.
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20161222cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved

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