DSEP8-06B Datasheet by IXYS

DSEP8-06B

Low Loss and Soft Recovery

High Performance Fast Recovery Diode

Single Diode

HiPerFRED

13

Part number

DSEP8-06B

Backside: cathode

FAV

rr

t ns25

RRM

10

600

=

V=V

I=A

Features / Advantages: Applications: Package:

● Planar passivated chips

● Very low leakage current

● Very short recovery time

● Improved thermal behaviour

● Very low Irm-values

● Very soft recovery behaviour

● Avalanche voltage rated for reliable operation

● Soft reverse recovery for low EMI/RFI

● Low Irm reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating switch

● Antiparallel diode for high frequency

switching devices

● Antisaturation diode

● Snubber diode

● Free wheeling diode

● Rectifiers in switch mode power

supplies (SMPS)

● Uninterruptible power supplies (UPS)

TO-220

● Industry standard outline

● RoHS compliant

● Epoxy meets UL 94V-0

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and

the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The

information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns

the specific application of your product, please contact your local sales office.

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.

Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend

- to perform joint risk and quality assessments;

- the conclusion of quality agreements;

- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.

Terms Conditions of usage:

IXYS reserves the right to change limits, conditions and dimensions. 20160926aData according to IEC 60747and per semiconductor unless otherwise specified

IXYS 8-063 Symbol Delinikion Condiﬁons min. lyp. max. iUniI

DSEP8-06B

ns

1.5 A

T

VJ

= °C

reverse recovery time

A2.5

25

60

ns

I

RM

max. reverse recovery current

I

F

= A;10

25

T = 100°C

VJ

-di

F

= A/µs200/dt

t

rr

V

R

= V300

T

VJ

= °C25

T = 100°C

VJ

V = V

Symbol

Definition

Ratings

typ.

max.

I

R

V

IA

V

F

2.67

R2.5 K/W

R

min.

10

V

RSM

V

60T = 25°C

VJ

T = °C

VJ

mA0.25V = V

R

T = 25°C

VJ

I = A

F

V

T = °C

C

125

P

tot

60 WT = 25°C

C

RK/W

10

600

max. non-repetitive reverse blocking voltage

reverse current, drain current

forward voltage drop

total power dissipation

Conditions

Unit

3.19

T = 25°C

VJ

150

V

F0

V

1.12T = °C

VJ

175

r

F

56

mΩ

V

1.85T = °C

VJ

I = A

F

V

10

2.43

I = A

F

20

I = A

F

20

threshold voltage

slope resistance for power loss calculation only

µA

150

V

RRM

V

600

max. repetitive reverse blocking voltage

T = 25°C

VJ

C

J

6

junction capacitance

V = V400 T = 25°Cf = 1 MHz

RVJ

pF

I

FSM

t = 10 ms; (50 Hz), sine; T = 45°C

VJ

max. forward surge current

V = 0 V

R

T = °C

VJ

175

50 A

600

FAV

d =rectangular 0.5

average forward current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Fast Diode

600

0.50

IXYS reserves the right to change limits, conditions and dimensions. 20160926aData according to IEC 60747and per semiconductor unless otherwise specified

IXYS 8-063 T0-220 Symbol Delinikion Condiﬁons min. lyp. max. iUni! 74»

DSEP8-06B

Ratings

XXXXXX

Zyyww

Logo

Part Number

Date Code

Lot #

abcdef

Product Marking

Assembly Line

Package

T

op

°C

M

D

Nm0.6

mounting torque

0.4

T

VJ

°C175

virtual junction temperature

-55

Weight g2

Symbol

Definition

typ.

max.

min.

Conditions

operation temperature

Unit

F

C

N60

mounting force with clip

20

I

RMS

RMS current

35 A

per terminal

150-55

TO-220

Similar Part Package Voltage class

DSEP8-06A TO-220AC (2) 600

Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering

DSEP8-06B 496219Tube 50DSEP8-06BStandard

T

stg

°C150

storage temperature

-55

threshold voltage

V1.12

mΩ

V

0 max

R

0 max

slope resistance *

53

Equivalent Circuits for Simulation

T =

VJ

I

V

0

R

0

Fast

Diode

175 °C

* on die level

IXYS reserves the right to change limits, conditions and dimensions. 20160926aData according to IEC 60747and per semiconductor unless otherwise specified

DSEP8-06B

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.32 4.82 0.170 0.190

A1 1.14 1.39 0.045 0.055

A2 2.29 2.79 0.090 0.110

b 0.64 1.01 0.025 0.040

b2 1.15 1.65 0.045 0.065

C 0.35 0.56 0.014 0.022

D 14.73 16.00 0.580 0.630

E 9.91 10.66 0.390 0.420

e 5.08 BSC 0.200 BSC

H1 5.85 6.85 0.230 0.270

L 12.70 13.97 0.500 0.550

L1 2.79 5.84 0.110 0.230

ØP 3.54 4.08 0.139 0.161

Q 2.54 3.18 0.100 0.125

2x b2

E

ØP

Q

D

L1

L

2x b

eC

A2

H1

A1

A

1 3

4

= supplier option

13

Outlines TO-220

IXYS reserves the right to change limits, conditions and dimensions. 20160926aData according to IEC 60747and per semiconductor unless otherwise specified

3° /// | / \ \\ , \ / , \ \ / / , / X\ I \‘_ \\ Fig. 7 Tvanswem thermal impedance Juncﬁon to case

DSEP8-06B

200 600 10000 400 800

40

60

80

100

0.00001 0.0001 0.001 0.01 0.1 1

0.001

0.01

0.1

1

10

0 40 80 120 160

0.0

0.5

1.0

1.5

2.0

0 200 400 600 800 1000

0

20

40

60

0.0

0.1

0.2

0.3

200 600 10000 400 800

0

2

4

6

8

10

0001001

0

50

100

150

200

2

5

0

0123

0

5

10

15

20

25

3

0

T

VJ

= 100°C

T

VJ

= 25°C

I

RM

Q

r

V

FR

T

VJ

= 100°C

V

R

= 300 V

T

VJ

= 100°C

V

R

= 300 V

T

VJ

= 100°C

V

R

= 300 V

t

fr

I

F

= 5 A

I

F

= 10 A

I

F

= 20 A

I

F

= 5 A

I

F

= 10 A

I

F

= 20 A

I

F

= 5 A

I

F

= 10 A

I

F

= 20 A

T

VJ

= 100°C

I

F

= 10 A

K

f

T

VJ

[°C]

t [s]

V

FR

[V]

I

RM

[A]

Q

r

[μC]

I

F

[A]

V

F

[V] -di

F

/dt [A/μs]

t

rr

[ns]

t

fr

[µs]

Z

thJC

[K/W]

-di

F

/dt [A/μs]

-di

F

/dt [A/μ id-]s

F

/dt [A/μs]

Fig. 1 Forward current

I

F

versus V

F

Fig. 2 Typ. reverse recov. charge

Q

r

versus -di

F

/dt Fig. 3 Typ. peak reverse current

I

RM

versus -di

F

/dt

Fig. 4 Typ. dynamic parameters

Q

r

, I

RM

versus T

VJ

Fig. 5 Typ. recovery time

t

rr

versus -di

F

/dt Fig. 6 Typ. peak forward voltage

V

FR

and t

fr

versus di

F

/dt

Fi

g

.

7

T

r

ans

i

ent

therma

l

i

m

ped

a

nc

e

ju

n

c

t

i

on

to

cas

e

Constants for Z

thJC

calculation:

i R

thi

[K/W] t

i

[s]

1 1.449 0.0052

2 0.5578 0.0003

3 0.4931 0.0169

T

VJ

= 150°C

Fast Diode

IXYS reserves the right to change limits, conditions and dimensions. 20160926aData according to IEC 60747and per semiconductor unless otherwise specified

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