MUBW20-06A7 Datasheet by IXYS

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© 2001 IXYS All rights reserved
1 - 8
Converter - Brake - Inverter Module (CBI2)
Input Rectifier Bridge D11 - D16
Symbol Conditions Maximum Ratings
VRRM 1600 V
IFAV TC = 80°C; sine 180°25 A
IDAVM TC = 80°C; rectangular; d = 1/3 24 A
IFSM TVJ = 25°C; t = 10 ms; sine 50 Hz 300 A
Ptot TC = 25°C 100 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VFIF = 20 A; TVJ = 25°C 1.4 1.6 V
TVJ = 125°C 1.3 V
IRVR = VRRM; TVJ = 25°C 0.15 mA
TVJ = 125°C 1.2 mA
trr VR = 100 V; IF = 15 A; di/dt = -15 A/µs 1 µs
RthJC (per diode) 1.3 K/W
Three Phase Brake Chopper Three Phase
Rectifier Inverter
VRRM = 1600V VCES = 600 V VCES = 600 V
IDAVM = 36 A IC25 = 25 A IC25 = 35 A
IFSM = 300 A VCE(sat) = 1.9 V VCE(sat) = 1.9 V
105
MUBW 20-06 A7
IXYS reserves the right to change limits, test conditions and dimensions.
NTC
D11 D13 D15
D12 D14 D16
123
D7
T7
T1 D1 T3 D3
T2 T4 T6
T5
D4
D2 D6
D5
21 22
7
64
5
16
15 18
17
20
19
11
10
23 24
14
8
9
12 13
Application: AC motor drives with
Input from single or three phase grid
Three phase synchronous or
asynchronous motor
electric braking operation
Features
High level of integration - only one power
semiconductor module required for the
whole drive
Fast rectifier diodes for enhanced EMC
behaviour
NPT IGBT technology with low
saturation voltage, low switching
losses, high RBSOA and short circuit
ruggedness
Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting
Temperature sense included
© 2001 IXYS All rights reserved
2 - 8
MUBW 20-06 A7
Output Inverter T1 - T6
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 600 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 TC = 25°C35A
IC80 TC = 80°C25A
RBSOA VGE = ±15 V; RG = 47 ; TVJ = 125°CI
CM = 40 A
Clamped inductive load; L = 100 µH VCEK VCES
tSC VCE = VCES; VGE = ±15 V; RG = 47 ; TVJ = 125°C10µs
(SCSOA) non-repetitive
Ptot TC = 25°C 125 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 20 A; VGE = 15 V; TVJ = 25°C 1.9 2.3 V
TVJ = 125°C 2.2 V
VGE(th) IC = 0.5 mA; VGE = VCE 4.5 6.5 V
ICES VCE = VCES; VGE = 0 V; TVJ = 25°C 0.6 mA
TVJ = 125°C 0.4 mA
IGES VCE = 0 V; VGE = ± 20 V 200 nA
td(on) 50 ns
tr55 ns
td(off) 300 ns
tf30 ns
Eon 0.92 mJ
Eoff 0.68 mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 1100 pF
QGon VCE= 300V; VGE = 15 V; IC = 20 A 65 nC
RthJC (per IGBT) 1 K/W
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 20 A
VGE = ±15 V; RG = 47
Output Inverter D1 - D6
Symbol Conditions Maximum Ratings
IF25 TC = 25°C35A
IF80 TC = 80°C24A
Symbol Conditions Characteristic Values
min. typ. max.
VFIF = 20 A; VGE = 0 V; TVJ = 25°C 2.1 V
TVJ = 125°C 1.4 V
IRM IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C13A
trr VR = 300 V; VGE = 0 V 90 ns
RthJC (per diode) 2.1 K/W
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at TJ = 125°C)
V
0
= 1.12V; R
0
= 0.11 m
T1 - T6 / D1 - D6
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V
0
= 0.9 V; R
0
= 65 m
Free Wheeling Diode (typ. at TJ = 125°C)
V
0
= 1.09 V; R
0
= 12 m
T7 / D7
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V
0
= 0.99 V; R
0
= 81 m
Free Wheeling Diode (typ. at TJ = 125°C)
V
0
= 1.07 V; R
0
= 23 m
Thermal Response
D11 - D16
Rectifier Diode (typ.)
C
th1
= 0.106 J/K; R
th1
= 1.06 K/W
C
th2
= 0.79 J/K; R
th2
= 0.239 K/W
T1 - T6 / D1 - D6
IGBT (typ.)
C
th1
= 0.108 J/K; R
th1
= 0.79 K/W
C
th2
= 0.921 J/K; R
th2
= 0.209 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.065 J/K; R
th1
= 1.766 K/W
C
th2
= 0.636 J/K; R
th2
= 0.344 K/W
T7 / D7
IGBT (typ.)
C
th1
= 0.077 J/K; R
th1
= 1.111 K/W
C
th2
= 0.732 J/K; R
th2
= 0.279 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.043 J/K; R
th1
= 2.738 K/W
C
th2
= 0.54 J/K; R
th2
= 0.462 K/W
':I IXYS
© 2001 IXYS All rights reserved
3 - 8
MUBW 20-06 A7
Brake Chopper T7
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 600 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 TC = 25°C25A
IC80 TC = 80°C18A
RBSOA VGE = ±15 V; RG = 68 ; TVJ = 125°CI
CM = 30 A
Clamped inductive load; L = 100 µH VCEK VCES
tSC VCE = VCES; VGE = ±15 V; RG = 68 ; TVJ = 125°C10µs
(SCSOA) non-repetitive
Ptot TC = 25°C90W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 15 A; VGE = 15 V; TVJ = 25°C 1.9 2.3 V
TVJ = 125°C 2.1 V
VGE(th) IC = 0.4 mA; VGE = VCE 4.5 6.5 V
ICES VCE = VCES; VGE = 0 V; TVJ = 25°C 0.5 mA
TVJ = 125°C 0.3 mA
IGES VCE = 0 V; VGE = ± 20 V 200 nA
td(on) 30 ns
tr50 ns
td(off) 270 ns
tf40 ns
Eon 0.7 mJ
Eoff 0.5 mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MH z 800 pF
QGon VCE= 300 V; VGE = 15 V; IC = 15 A 57 nC
RthJC 1.39 K/W
Brake Chopper D7
Symbol Conditions Maximum Ratings
VRRM TVJ = 25°C to 150°C 600 V
IF25 TC = 25°C22A
IF80 TC = 80°C15A
Symbol Conditions Characteristic Values
min. typ. max.
VFIF = 15 A; TVJ = 25°C 2.2 V
TVJ = 125°C 1.5 V
IRVR = VRRM; TVJ = 25°C 0.06 mA
TVJ = 125°C 0.07 mA
IRM IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C11A
trr VR = 300 V 80 ns
RthJC 3.2 K/W
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 15 A
VGE = ±15 V; RG = 68
:I IXYS
© 2001 IXYS All rights reserved
4 - 8
MUBW 20-06 A7
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
R25 T = 25°C 4.75 5.0 5.25 k
B25/50 3375 K
Module
Symbol Conditions Maximum Ratings
TVJ Operating -40...+125 °C
TJM 150 °C
Tstg -40...+125 °C
VISOL IISOL 1 mA; 50/60 Hz 2500 V~
MdMounting torque (M5) 2.7 - 3.3 Nm
Symbol Conditions Characteristic Values
min. typ. max.
Rpin-chip 5m
dSCreepage distance on surface 6 mm
dAStrike distance in air 6 mm
RthCH with heatsink compound 0.02 K/W
Weight 180 g
Dimensions in mm (1 mm = 0.0394")
:I IXYS
© 2001 IXYS All rights reserved
5 - 8
0.001 0.01 0.1 1
0
20
40
60
80
100
120
140
160
23456789110
102
103
0.0 0.4 0.8 1.2 1.6 2.0
0
10
20
30
40
50
60
0 20406080100120
0
100
200
300
400
500
600
0 20 40 60 80 100 120 140
0.001 0.01 0.1 1 10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I2t
IFSM
IF
A
VFt
stms
Ptot
W
Id(AV)M
A
Tamb
t
s
K/W
A2s
0 20406080100120140
0
20
40
60
80
Id(AV)
TC
A
V
A
°C°C
DWFN17-16
ZthJC
TVJ= 125°C
TVJ= 25°C
TVJ= 45°C
TVJ= 125°C
TVJ= 45°C
TVJ= 125°C
50Hz, 80% VRRM
RthA:
0.05 K/W
0.15 K/W
0.3 K/W
0.5 K/W
1 K/W
2 K/W
5 K/W
Fig. 4 Power dissipation versus direct output current and ambient temperature, sin
180°
Fig. 5 Max. forward current versus
case temperature
Fig. 6 Transient thermal impedance junction to case
Fig. 1 Forward current versus voltage
drop per diode
Fig. 2 Surge overload current Fig. 3 I2t versus time per diode
Input Rectifier Bridge D11 - D16
MUBW 20-06 A7
© 2001 IXYS All rights reserved
6 - 8
0 200 400 600 800 1000
0
10
20
30
40
50
!
$
'
#
0123456
0
10
20
30
40
50
60
0 20406080
0
5
10
15
20
0123456
0
10
20
30
40
50
60
TVJ = 25°CTVJ = 125°C
VCE = 300V
IC = 50A
VCE
V
IC
VCE
A
IC
V
nC
QG-di/dt
V
VGE IRM
trr
A/µs
MUBW2006A7
TVJ = 125°C
VR = 300V
IF = 30A
IRM
trr
9V
11V
VGE= 17V
15V
13V
A
9V
11V
VGE= 17V
15V
13V
A
4 6 8 10121416
0
10
20
30
40
50
60
VCE = 20V
V
VGE
A
IC
TVJ = 25°C
TVJ = 125°C
0.0 0.5 1.0 1.5 2.0 2.5
0
10
20
30
40
50
V
VF
IF
TVJ = 25°C
TVJ = 125°C
A
ns
Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics
Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics of
free wheeling diode
Fig. 11 Typ. turn on gate charge Fig. 12 Typ. turn off characteristics of
free wheeling diode
Output Inverter T1 - T6 / D1 - D6
MUBW 20-06 A7
© 2001 IXYS All rights reserved
7 - 8
Fig. 13 Typ. turn on energy and switching Fig. 14 Typ. turn off energy and switching
times versus collector current times versus collector current
Fig. 15 Typ. turn on energy and switching Fig.16 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Fig. 17 Reverse biased safe operating area Fig. 18 Typ. transient thermal impedance
RBSOA
0 10203040
0
1
2
3
4
0
20
40
60
80
0 10203040
0.0
0.5
1.0
1.5
2.0
0
100
200
300
400
0.00001 0.0001 0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
10
0 20406080100120
0.00
0.25
0.50
0.75
1.00
0
125
250
375
500
0 20406080100120
0.0
0.4
0.8
1.2
1.6
0
20
40
60
80
single pulse
VCE = 300V
VGE = ±15V
RG = 47
TVJ = 125°C
MUBW2006A7
VCE = 300V
VGE = ±15V
IC = 20A
TVJ = 125°C
0 100 200 300 400 500 600 700
0
10
20
30
40
50
RG = 47
TVJ = 125°C
VCE = 300V
VGE = ±15V
RG = 47
TVJ = 125°C
Eon
VCE = 300V
VGE = ±15V
IC = 20A
TVJ = 125°C
Jd(on)
Jr
Eoff
Jd(off)
Jf
Eon
Jd(on)
Jr
Eoff
Jd(off)
Jf
IC
A
IC
A
Eoff
Eon tt
RG
RG
VCE t
s
mJ
Eon
mJ
Eoff
ns
t
ns
t
ICM
K/W
ZthJC IGBT
diode
V
A
mJ ns ns
mJ
Output Inverter T1 - T6 / D1 - D6
MUBW 20-06 A7
© 2001 IXYS All rights reserved
8 - 8
Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics of
free wheeling diode
Fig. 21 Typ. turn off energy and switching Fig. 22 Typ. turn off energy and switching
times versus collector current times versus gate resistor
Fig. 23 Typ. transient thermal impedance Fig. 24 Typ. thermistorresistance versus
temperature
0123456
0
10
20
30
40
50
VGE = 15V
V
VCE
A
IC
TVJ = 25°CTVJ = 125°C
0123
0
4
8
12
16
20
V
VF
IF
TVJ = 25°C
TVJ = 125°C
A
0 5 10 15 20 25 30 35
0.0
0.5
1.0
1.5
0
100
200
300
VCE = 300V
VGE = ±15V
RG = 68
TVJ = 125°C
Eoff
Jd(off)
Jf
IC
A
Eoff t
mJ ns
0 20 40 60 80 100 120
0.0
0.2
0.4
0.6
0.8
0
100
200
300
400
VCE = 300V
VGE = ±15V
IC = 15A
TVJ = 125°C
Eoff
Jd(off)
Jf
Eoff t
ns
mJ
0.00001 0.0001 0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
10
single pulse
t
s
K/W
ZthJC
IGBT
diode
0 25 50 75 100 125 150
100
1000
10000
MUBW2006A7
T
°C
R
RG
Brake Chopper T7 / D7
Temperature Sensor NTC
MUBW 20-06 A7

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