ri 2x05
© 2000 IXYS All rights reserved 1 - 2
VRRM = 1200 V
IdAV = 50 A
trr = 40 ns
Symbol Test Conditions Maximum Ratings
IdAV TK = 85°C, module 50 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 200 A
VR = 0 t = 8.3 ms (60 Hz), sine 210 A
TVJ = TVJM t = 10 ms (50 Hz), sine 185 A
VR = 0 t = 8.3 ms (60 Hz), sine 195 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 200 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 180 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 170 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 160 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL £ 1 mA t = 1 s 3600 V~
MdMounting torque (M5) 2 - 2.5 Nm
(10-32UNF) 18-22 lb.in.
Weight typ. 35 g
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol Test Conditions Characteristic Values
typ. max
IRVR= VRRM TVJ = 25°C 0.75 mA
VR= 0.8 VRRM TVJ = 125°C47mA
VFIF= 30 A; TVJ = 25°C 2.55 V
VT0 For power-loss calculations only 1.65 V
rT18.2 mW
RthJS per diode, 120° rect. 1.5 K/W
per module, 120° rect. 0.25 K/W
IRM IF = 30 A, -diF/dt = 240 A/ms1618A
VR = 540 V, L £ 0.05 mH, TVJ = 100°C
trr IF = 1 A; -di/dt = 100 A/ms; VR = 30 V, TVJ = 25°C4060ns
dSCreeping distance on surface 12.7 mm
dACreepage distance in air 9.4 mm
aMax. allowable acceleration 50 m/s2
VRSM VRRM Type
VV
1200 1200 VUE 50-12NO1
Features
●Package with DCB ceramic base plate
●Isolation voltage 3600 V~
●Planar passivated chips
●Leads suitable for PC board soldering
●Creeping and creepage-distance
fulfils UL 508/CSA 22.2NO14 and
VDE 0160 requirements
●Epoxy meet UL94V-O
●UL registered E72873
Applications
●Supplies for DC power equipment
●Input rectifiers for PWM inverter
●Output filter for PWM inverter
Advantages
●Reduced EMI/RFI
●Easy to mount with two screws
●Space and weight savings
●Improved temperature and power
cycling
Use output terminals in parallel connections
Dimensions in mm (1 mm = 0.0394")
VUE 50
Three Phase
Rectifier Bridge
1245
6
10
8
10
8
6
4/5
1/2
© 2000 IXYS All rights reserved 2 - 2
VUE 50
Fig. 7 Transient thermal impedance junction to heatsink Fig. 8 Power dissipation versus direct output current
and ambient temperature
0 200 400 600
0
10
20
30
40
50
0 200 400 600
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.001 0.01 0.1 1 10
0.0
0.5
1.0
1.5
2.0
t
A/ s
04080120160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 200 400 600
0
20
40
60
80
100
0
600
1200
1800
2400
3000
-diF/dt
IRM
A/ s
ZthJS
s
K/W
diF/dt
tfr
VFR
ns
V
VFR
µs
-diF/dt
trr
typ.
max.
TVJ
trr
KfIRM
°C
A
max.
typ.
01234
0
10
20
30
40
50
60
70
V
VF
IF
A
IF=15A
IF=30A
IF=60A
IF=30A
TVJ=100°C
VR= 540V
TVJ=100°C
IF=15A
IF=30A
IF=60A
IF=30A
TVJ=150°C
TVJ= 25°CIdAVM
0 25 50 75 100 125 150
0
10
20
30
40
50
60
A
°C
VR=540 V
IF=30A
TVJ=125°C
0 1020304050
0
50
100
150
200
250
300
W
IdAVM
A0 25 50 75 100 125 150
TA
0.2
0.5
1.0
1.5
2.0
4.0
6.0
°C
0.05
0.2
0.75
0.5
0.07
0.13
0.2
0.04
RthJSi ti
TS
tfr
A/ s
RthSA (K/W)
Fig. 1 Forward current Fig. 2 Maximum forward current at Fig. 3 Typical peak reverse current
versus voltage drop per diode. heatsink temperature TS. versus -diF/dt.
Fig. 4 Dynamic parameters versus Fig. 5 Typical recovery time Fig. 6 Typical peak forward voltage and
junction temperature. versus -diF/dt. forward recovery time versus -diF/dt.
-
Products related to this Datasheet
BRIDGE RECT 3P 1.2KV 50A V1A-PAK