“a
© 2000 IXYS All rights reserved 1 - 3
IdAVM = 32 A
VRRM = 800-1600 V
VRSM VRRM Type
VDSM VDRM
VV
900 800 VHF 28-08io5
1300 1200 VHF 28-12io5
1500 1400 VHF 28-14io5
1700 1600 VHF 28-16io5
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
for resistive load
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol Test Conditions Maximum Ratings
IdAV TK = 85°C, module 28 A
IdAVM module 32 A
IFRMS, ITRMS per leg 23 A
IFSM, ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 300 A
VR = 0 V t = 8.3 ms (60 Hz), sine 330 A
TVJ = TVJM t = 10 ms (50 Hz), sine 270 A
VR = 0 V t = 8.3 ms (60 Hz), sine 300 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 440 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 455 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 365 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 370 A2s
(di/dt)cr TVJ = 125°C repetitive, IT = 50 A 150 A/ms
f =50 Hz, tP =200 ms
VD = 2/3 VDRM
IG = 0.3 A, non repetitive, IT = 1/2 • IdAV 500 A/ms
diG/dt = 0.3 A/ms
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 1000 V/ms
RGK = ¥; method 1 (linear voltage rise)
VRGM 10 V
PGM TVJ = TVJM tp = 30 ms£10 W
IT = ITAVM tp = 500 ms£5W
tp = 10 ms £1W
PGAVM 0.5 W
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL £ 1 mA t = 1 s 3600 V~
MdMounting torque (M5) 2-2.5 Nm
(10-32 UNF) 18-22 lb.in.
Weight 50 g
Features
Package with DCB ceramic base plate
Isolation voltage 3600 V~
Planar passivated chips
¼" fast-on terminals
UL registered E 72873
Applications
Supply for DC power equipment
DC motor control
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
VHF 28
Half Controlled
Single Phase Rectifier Bridge
with Freewheeling Diode
123
6
8
4
2
8
6
4
31
:I IXYS
© 2000 IXYS All rights reserved 2 - 3
Symbol Test Conditions Characteristic Values
IR, IDVR = VRRM; VD = VDRM TVJ = TVJM £5mA
TVJ = 25°C£0.3 mA
VT, VFIT, IF = 45 A; TVJ = 25°C£1.6 V
VT0 For power-loss calculations only (TVJ = 125°C) 0.9 V
rT15 mW
VGT VD = 6 V; TVJ = 25°C£1.0 V
TVJ = -40°C£1.2 V
IGT VD = 6 V; TVJ = 25°C£65 mA
TVJ = -40°C£80 mA
TVJ = 125°C£50 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM £0.2 V
IGD TVJ = TVJM;V
D = 2/3 VDRM £5mA
ILIG = 0.3 A; tG = 30 ms; TVJ = 25°C£150 mA
diG/dt = 0.3 A/ms; TVJ = -40°C£200 mA
TVJ = 125°C£100 mA
IHTVJ = 25°C; VD = 6 V; RGK = ¥£100 mA
tgd TVJ = 25°C; VD = 1/2 VDRM £2ms
IG = 0.3 A; diG/dt = 0.3 A/ms
tqTVJ = 125°C, IT = 15 A, tP = 300 ms, VR = 100 V typ. 150 ms
Qrdi/dt = -10 A/ms, dv/dt = 20 V/ms, VD = 2/3 VDRM 75 mC
RthJC per thyristor (diode); DC current 1.4 K/W
per module 0.35 K/W
RthJK per thyristor (diode); DC current 2.0 K/W
per module 0.5 K/W
dSCreepage distance on surface 12.6 mm
dACreepage distance in air 6.3 mm
aMax. allowable acceleration 50 m/s2
VHF 28
Fig. 1 Gate trigger range
Fig. 2 Gate controlled delay time tgd
1 10 100 1000
0.1
1
10
IG
VG
mA
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
V
4: PGAV = 0.5 W
5: PGM = 1 W
6: PGM = 10 W
IGD, TVJ = 125°C
4
2
1
5
6
10 100 1000
1
10
100
1000
µs
tgd
TVJ = 25°C
typ. Limit
mA
IG
3
750
10 A2. v,= a van mu lFSM / 200 // 425-: mu ‘ I’t :33 "3" 2 4 s 8 I0 Rum (KAI) 9,31 Kmscsw.) 3.42 K6.5(4m/-> e.a7 K5.5(2m/—> I . 3 K6 SCIm/d) 2.5 K6.5(am/-> Schaltmu Clrcvl l VHF” I“. (A) _. T. ('43—. MW 2.5 2.0 1mm 9.0
© 2000 IXYS All rights reserved 3 - 3
Fig. 3 Surge overload current per chip
IFSM: Crest value, t: duration Fig. 5 Max. forward current at
heatsink temperature
Fig. 4 I2t versus time (1-10 ms)
per chip
Fig. 6 Power dissipation versus direct output current and ambient temperature
Fig. 7 Transient thermal impedance junction to heatsink per chip
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.3441 0.0344
2 1.1554 0.12
3 1.5005 0.5
VHF 28

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