IXDN55N120D1 Datasheet by IXYS

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© 2002 IXYS All rights reserved 1 - 4
IXDN 55N120 D1
203
Symbol Conditions Maximum Ratings
VCES TJ = 25°C to 150°C 1200 V
VCGR TJ = 25°C to 150°C; RGE = 20 kΩ1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25°C 100 A
IC90 TC = 90°C 62 A
ICM TC = 90°C, tp = 1 ms 124 A
RBSOA VGE = ±15 V, TJ = 125°C, RG = 22 Ω ICM = 100 A
Clamped inductive load, L = 30 µH VCEK < VCES
tSC VGE = ±15 V, VCE = VCES, TJ = 125°C 10 µs
(SCSOA) RG = 22 Ω, non repetitive
PCTC = 25°C IGBT 450 W
Diode 220 W
VISOL 50/60 Hz; IISOL ≤ 1 mA 2500 V~
TJ-40 ... +150 °C
Tstg -40 ... +150 °C
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.
Weight 30 g
VCES = 1200 V
IC25 = 100 A
VCE(sat) typ = 2.3 V
Features
●NPT IGBT technology
●low saturation voltage
●low switching losses
●square RBSOA, no latch up
●high short circuit capability
●positive temperature coefficient for
easy paralleling
●MOS input, voltage controlled
●optional ultra fast diode
●International standard package
miniBLOC
Advantages
●Space savings
●Easy to mount with 2 screws
●High power density
Typical Applications
●AC motor speed control
●DC servo and robot drives
●DC choppers
●Uninteruptible power supplies (UPS)
●Switch-mode and resonant-mode
power supplies
High Voltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V(BR)CES VGE = 0 V 1200 V
VGE(th) IC = 2 mA, VCE = VGE 4.5 6.5 V
ICES VCE = VCES TJ = 25°C 3.8 mA
TJ = 125°C 6 mA
IGES VCE = 0 V, VGE = ± 20 V ± 500 nA
VCE(sat) IC = 55 A, VGE = 15 V 2.3 2.8 V
E = Emitter ①, C = Collector
G = Gate, E = Emitter ①
① Either Emitter terminal can be used as
Main or Kelvin Emitter
miniBLOC, SOT-227 B
E153432
G
E
E
C
G
C
E
IXY 0.28 K/W Package with heatsink compound 0.1 K/W Reverse Diode (FRED) Characteristic Values (T: 25%) unless olherwise specified) l Conditions min. lyp. max. I 55 A,vfit:0v 2.4 2.6 v I,:55A,vfit:ov,TJ:125°c 1.9 v To : 25‘>C 1 10 A TE : QODC 60 A m I, : 55 A, -dI,/dI : 400 A/ps‘ vH : 600 v 40 A vat : o v, T1 :12500 200 ns I, :1 A, -dI,/dI : 100 A/us, vK : 30 v, vGE : o v 40 ns Rch 0.6 K/W miniBLOC, SOT-227 B m IIJI Efiiwm WAg‘l --H 130' "o 4 i | < z="" 2="" z="" lllll="" e!="" i="" z="" —-i:o="">
© 2002 IXYS All rights reserved 2 - 4
IXDN 55N120 D1
203
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Cies 3300 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 500 pF
Cres 220 pF
QgIC = 50 A, VGE = 15 V, VCE = 0.5 VCES 240 nC
td(on) 100 ns
tr70 ns
td(off) 500 ns
tf70 ns
Eon 8.4 mJ
Eoff 6.2 mJ
RthJC 0.28 K/W
RthCK Package with heatsink compound 0.1 K/W
Inductive load, TJ = 125°C
IC = 55 A, VGE = ±15 V,
VCE = 600 V, RG = 22 Ω
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Conditions min. typ. max.
VFIF = 55 A, VGE = 0 V 2.4 2.6 V
IF = 55 A, VGE = 0 V, TJ = 125°C 1.9 V
IFTC = 25°C 110 A
TC = 90°C 60 A
IRM IF = 55 A, -diF/dt = 400 A/µs, VR = 600 V 40 A
trr VGE = 0 V, TJ = 125°C 200 ns
trr IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V 40 ns
RthJC 0.6 K/W
M4 screws (4x) supplied
miniBLOC, SOT-227 B
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 37.80 38.20 1.489 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
V 3.30 4.57 0.130 0.180
W 0.780 0.830 19.81 21.08
© 2002 IXYS All rights reserved 3 - 4
IXDN 55N120 D1
203
0 200 400 600 800 1000
0
40
80
120
0
100
200
300
01234
0
30
60
90
120
150
180
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
20
40
60
80
100
120
0 50 100 150 200 250
0
5
10
15
20
0.00.51.01.52.02.53.03.5
0
20
40
60
80
100
120
13V
11V
TJ = 25°C VGE=17V
TJ = 125°C
VCE = 600V
IC = 50A
15V
567891011
0
20
40
60
80
100
120
13V
11V
VGE=17V
15V
VCE = 20V
TJ = 25°C
9V
9V
VCE
V
A
IC
VCE
A
IC
V
V
V
VGE VF
A
IC
A
IF
nC
QG-di/dt
V
VGE
A
IRM trr
ns
A/μs
IXDN55N120
TJ = 125°C
VR = 600V
IF = 50A
TJ = 25°C
TJ = 125°C
IRM
trr
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of
free wheeling diode
© 2002 IXYS All rights reserved 4 - 4
IXDN 55N120 D1
203
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
0 20406080100
0
6
12
18
24
0
30
60
90
120
0 20406080100
0
2
4
6
8
10
12
0
100
200
300
400
500
600
0.00001 0.0001 0.001 0.01 0.1 1
0.00001
0.0001
0.001
0.01
0.1
1
0 102030405060708090100
0
2
4
6
8
10
0
300
600
900
1200
1500
0 102030405060708090100
0
5
10
15
20
0
60
120
180
240
single pulse
VCE = 600V
VGE = ±15V
RG = 22Ω
TJ = 125°C
IXDN55N120
VCE = 600V
VGE = ±15V
IC = 50A
TJ = 125°C
0 200 400 600 800 1000 1200
0
20
40
60
80
100
120
RG = 22Ω
TJ = 125°C
VCEK < VCES
VCE = 600V
VGE = ±15V
RG = 22Ω
TJ = 125°C
Eon
VCE = 600V
VGE = ±15V
IC = 50A
TJ = 125°C
td(on)
tr
Eoff
td(off)
tf
Eon
td(on)
tr
Eoff
td(off)
tf
IC
A
IC
A
mJ
Eoff
mJ
Eon
ns
t
ns
t
RG
Ω
RG
Ω
VCE t
s
mJ
Eon
mJ
Eoff
ns
t
ns
t
ICM
K/W
ZthJC IGBT
diode
A
V
IXYS A Lillelluse Technumgy
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