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AD\-\NTECH Emb'Core SQFlash Micro SD Card 1 Technical Manual 3 Class 10 (SOF-MSDx1-xM/G-21x)
SQFlash
Industrial Class 10 Micro SD Card
Specifications subject to change without notice, contact your sales representatives for the most update information.
REV 0.3 Page 1 of 22 May 4, 2016
SQFlash Micro SD Card
Technical Manual
Class 10 (SQF-MSDx1-xM/G-21x)
AD\-\NTECH Emb'Core
SQFlash
Industrial Class 10 Micro SD Card
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CONTENTS
1.Overview ............................................................................................ 4
2.Standard Features ............................................................................. 5
3.Additional Features ........................................................................... 6
4.Pin Assignment and Block Diagram ................................................ 8
5.Power Consumption ....................................................................... 11
6.DC Characters ................................................................................. 11
7.AC Characters ................................................................................. 14
8.Dimensions ...................................................................................... 19
Appendix: Part Number Table ........................................................... 21
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SQFlash
Industrial Class 10 Micro SD Card
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REV 0.3 Page 3 of 22 May. 4, 2016
Revision History
Rev. Date History
0.1 2014/8/4
1. 1st draft
0.2 2014/8/21
1. Add Ultra MLC
0.3 2016/5/4
1. Add SLC
Advantech reserves the right to make changes without further notice to any products or data herein to improve reliability, function, or
design. Information furnished by Advantech is believed to be accurate and reliable. However, Advantech does not assure any liability
arising out of the application or use of this information, nor the application or use of any product or circuit described herein, neither
does it convey any license under its patent rights nor the rights of others.
Copyright © 1983-2015 Advantech Co., Ltd. All rights reserved.
AD\-\NTECH Emb'Core Overview
SQFlash
Industrial Class 10 Micro SD Card
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REV 0.3 Page 4 of 22 May. 4, 2016
1. Overview
The SQFlash Micro Secure Digital card (SQF-MSD) is fully compliant to the specification released by SD Card
Association. The Command List supports [Part 1 Physical Layer Specification Ver3.01 Final] definitions. Card
Capacity of Non-secure Area, Secure Area Supports [Part 3 Security Specification Ver3.00 Final] specifications.
The microSD 3.0 card comes with 8-pin interface, designed to operate at a maximum operating frequency of
50MHz or 100MHz. It can alternate communication protocol between the SD mode and SPI mode. It performs data
error detection and correction with very low power consumption. Its capacity could be more than 128MB and up to
64GB.
SQFlash Industrial Micro SD card is one of the most popular cards today based on its high performance, good
reliability and wide compatibility. Not to mention that it’s well adapted for hand-held applications in
semi-industrial/medical markets already.
AD\-\NTECH Emb'Core Standard Features
SQFlash
Industrial Class 10 Micro SD Card
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2. Standard Features
Support SD system specification version 3.0
Card capacity of non-secure area and secure area support [Part 3 Security
Specification Ver3.0 Final] Specifications
Support SD SPI mode
Designed for read-only and read/write cards
Bus Speed Mode (using 4 parallel data lines)
– UHS-I mode
SDR12 - SDR up to 25MHz 1.8V signaling
SDR25 - SDR up to 50MHz 1.8V signaling
SDR50: 1.8V signaling, Frequency up to 100 MHz, up to 50MB/sec
SDR104: 1.8V signaling, Frequency up to 208MHz, up to 104MB/sec
DDR50: 1.8V signaling, Frequency up to 50 MHz, sampled on both clock edges, up to 50MB/sec
Note: Timing in 1.8V signaling is different from that of 3.3V signaling.
The command list supports [Part 1 Physical Layer Specification Ver3.1 Final]
definitions
Copyrights Protection Mechanism
Compliant with the highest security of SDMI standard
Support CPRM (Content Protection for Recordable Media) of SD Card
Card removal during read operation will never harm the content
Password Protection of cards (optional)
Write Protect feature using mechanical switch
Built-in write protection features (permanent and temporary)
+4KV/-4KV ESD protection in contact pads
Operation voltage range: 2.7 ~ 3.6V
AD\-\NTECH Emb'Core Additional Features
SQFlash
Industrial Class 10 Micro SD Card
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3. Additional Features
Capacities
SLC type : 128MB256MB512MB1GB2GB
– MLC type4GB8GB16GB32GB64GB
Ultra MLC type2GB4GB8GB16GB32GB
Flash type
24 nm SLC
A19 nm MLC
Performance (SLC)
Capacity Mode Sequential
Read (MB/s) Write (MB/s)
128MB Non-UHS 16 4
256MB Non-UHS 16 10
512MB Non-UHS 16 10
1GB Non-UHS 18 10
2GB Non-UHS 20 20
Performance (MLC)
Capacity Mode Sequential
Read (MB/s) Write (MB/s)
2GB UHS-I 90 20
4GB UHS-I 90 20
8GB UHS-I 90 30
16GB UHS-I 90 40
32GB UHS-I 90 40
64GB UHS-I 90 45
Temperature Ranges
– Normal Temperature
-25 to 85
– Industrial Temperature
-40 to 85
Mechanical Specification
– Shock1,500G, Peak / 0.5ms
– Vibration20G, Peak / 20~2000Hz
Drop: 1.5m free fall
– Bending: 10N, hold 1min / 5times
Torque: 0.15N-m or +/-2.5deg
– Salt Spray:
Concentration: 3% NaCl
Temperature: 35
Storage for 24 HRS
Waterproof: JIS IPX7 compliance
Humidity
– Operating Humidity5% ~ 93%
– Non-Operating Humidity5% ~ 93%
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Industrial Class 10 Micro SD Card
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NAND flash Data Retention
– 10 years
AD\-\NTECH Emb'Core Flash Management
SQFlash
Industrial Class 10 Micro SD Card
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4. Flash Management
Error Correction Code (ECC)
Flash memory cells will deteriorate with use, which might generate random bit errors in the stored data. Thus,
SQF-MSD applies the BCH ECC algorithm, which can detect and correct errors occur during read process,
ensure data been read correctly, as well as protect data from corruption.
Wear Leveling
NAND Flash devices can only undergo a limited number of program/erase cycles, and in most cases, the
flash media are not used evenly. If some area get updated more frequently than others, the lifetime of the
device would be reduced significantly. Thus, Wear Leveling technique is applied to extend the lifespan of
NAND Flash by evenly distributing write and erase cycles across the media.
SQF-MSD provides advanced Wear Leveling algorithm, which can efficiently spread out the flash usage
through the whole flash media area. Moreover, by implementing both dynamic and static Wear Leveling
algorithms, the life expectancy of the NAND Flash is greatly improved.
Bad Block Management
Bad blocks are blocks that include one or more invalid bits, and their reliability is not guaranteed. Blocks that
are identified and marked as bad by the manufacturer are referred to as “Initial Bad Blocks”. Bad blocks that
are developed during the lifespan of the flash are named “Later Bad Blocks”. SQF-MSD implements an
efficient bad block management algorithm to detect the factory-produced bad blocks and manages any bad
blocks that appear with use. This practice further prevents data being stored into bad blocks and improves
the data reliability.
Auto-Read Refresh
Auto-Read Refresh is specifically applied on devices that read data mostly but rarely write data, such as GPS.
When blocks are continuously read, then the device cannot activate wear leveling since it can only be applied
while writing data. Thus, errors will accumulate and become uncorrectable. Accordingly, to avoid errors
exceed the amount ECC can correct and blocks turn bad, The firmware of SQF-MSD will automatically
refresh the bit errors when the error number in one block approaches the threshold, ex., 24 bits.
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Industrial Class 10 Micro SD Card
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Endurance
JEDEC defined an endurance rating TBW (TeraByte Written), following by the equation below, for indicating
the number of terabytes a flash drive can be written which is a measurement of flash drive’s expected
lifespan, represents the amount of data written to the device.
TBW = [(NAND Endurance) x (Flash Drive Capacity)] / WAF
NAND Endurance: Program / Erase cycle of a NAND flash.
o SLC: 60,000 cycles
o Ultra MLC: 20,000 cycles
o MLC: 3,000 cycles
Flash Drive Capacity: Physical capacity in total of a Flash Drive.
WAF: Write Amplification Factor (WAF), as the equation shown below, is a numerical value
representing the ratio between the amount of data that a flash drive controller needs to write and the
amount of data that the host’s flash controller writes. A better WAF, which is near to 1, guarantees
better endurance and lower frequency of data written to flash memory.
WAF = (Lifetime write to flash) / (Lifetime write to host)
The TBW rating for a flash drive shall be derived for and verified under the following workload conditions,
Sequential Write (copy file into card)
P/E cycles incurred: erase count after writing – erase count before writing
SQFlash Micro SD Card TBW
capacity TBW
WAF SLC WAF Ultra MLC MLC
128 MB
1.024414
7 -- -- --
256 MB 14 -- -- --
1 GB 58 -- -- --
2 GB 117
1.0301339
39 --
4 GB 234 77 11
8 GB 469 155 23
16 GB 937 310 47
32 GB 1874 621 93
64 GB -- -- 1243 186
128 GB -- -- -- 372
AD\-\NTECH Emb'Core Pin Assignment and Block Diagram
SQFlash
Industrial Class 10 Micro SD Card
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REV 0.3 Page 10 of 22 May. 4, 2016
5. Pin Assignment and Block Diagram
pin SD Mode SPI Mode
Name Type1 Description Name Type Description
1 DAT2 I/O/PP Data Line[bit2] RSV
2 CD/DAT3
2 I/O/PP 3 Card Detect/
Data Line[bit3] CS I
3 Chip Select (neg
true)
3 CMD PP Command/Response DI I Data In
4 VDD S Supply voltage VDD S Supply voltage
5 CLK I Clock SCLK I Clock
6 VSS S Supply voltage ground VSS S Supply voltage
ground
7 DAT0 I/O/PP Data Line[bit0] DO O/PP Data Out
8 DAT1 I/O/PP Data Line[bit1] RSV
(1) S: power supply, I: input; O: output using push-pull drivers; PP:I/O using push-pull driver
(2) The extended DAT lines (DAT1-DAT3)are input on power up. They start to operate as DAT lines after
SET_BUS_WIDTH command. The Host shall keep its own DAT1-DAT3 lines in input mode, as well,
while they are not used. It is defined so, in order to keep compatibility to MultiMedia Cards.
(3) At power up this line has a 50KOhm pull up enabled in the card. This resistor serves two functions Card
detection and Mode Selection. For Mode Selection, the host can drive the line high or let it be pulled
high to select SD mode. If the host wants to select SPI mode it should drive the line low. For Card
detection, the host detects that the line is pulled high. This pull-up should be disconnected by the user
during regular data transfer period, with SET_CLR_CARD_DETECT (ACMD42) command.
Name Width Description
CID 128bit
Card identification number; card individual number for identification.
Mandatory
RCA1 16bit
Relative card address; local system address of a card, dynamically
suggested by the card and approved by the host during initialization.
Mandatory
DSR 16bit Driver Stage Register; to configure the card’s output drivers. Optional
CSD 128bit
Card Specific Data; information about the card operation conditions.
Mandatory
SCR 64bit
SD Configuration Register; information about the SD Memory Card's Special
Features capabilities Mandatory
OCR 32bit Operation conditions register. Mandatory.
SSR 512bit
SD Status; information about the card proprietary features
Mandatory
OCR 32bit
Card Status; information about the card status
Mandatory
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SQFlash
Industrial Class 10 Micro SD Card
Specifications subject to change without notice, contact your sales representatives for the most update information.
REV 0.3 Page 11 of 22 May. 4, 2016
6. Power Consumption
Table list as below is the power consumption of SQF-MSD card with different type of flash memory.
Capacity Flash Structure Read Write Idle
4GB 4GB x 1 100 100 150
8GB 8GB x 1 100 100 150
16GB 8GB x 2 150 150 180
32GB 8GB x 4 180 180 220
64GB 8GB x 8 200 200 250
(1) Data transfer mode is single channel.
7. Electrical Specifications
Absolute Maximum Rating
Item Symbol Parameter MIN MAX Unit
1 VDD-VSS DC Power Supply -0.3 +3.3 V
2 VIN Input Voltage VSS-0.3 VDD+0.3 V
3 Ta Operating Temperature (Gold) -25 +85
4 Ta Operating Temperature (Diamond) -40 +85
5 Tst Storage Temperature -40 +85
6 VDD V
DD Voltage 2.7 3.6 V
8. DC Characters
BUS Operating Conditions for 3.3V Signaling
Threshold level for High Voltage Range
Parameter Symbol Min Max Unit Remarks
Supply voltage VDD 2.7 3.6 V
Output High Voltage VOH 0.75*VDD V IOH=-100uA VDDMin.
Output Low Voltage VOL 0.125*VDD V IOL = 100uA VDD min
Input High Voltage VIH 0.625*VDD VDD+0.3 V
Input Low Voltage VIL VSS-0.3 0.25 *VDD V
Power up time 250 ms from 0v to VDD min.
Bus signal levels
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SQFlash
Industrial Class 10 Micro SD Card
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REV 0.3 Page 12 of 22 May. 4, 2016
Peak Voltage and Leakage Current
Parameter Symbol Min Max Unit Remarks
Peak voltage on all lines -0.3 VDD+0.3 V
All Inputs
Input Leakage Current -10 10 uA
All Outputs
Output Leakage Current -10 10 uA
Bus Signal Line Levels
Parameter symbol Min Max Unit Remark
Pull-up resistance RCMD
RDAT 10 100 k to prevent bus floating
Total bus capacitance for each
signal line CL 40 pF
1 card
CHOST+CBUS shall
not exceed 30 pF
Capacitance of the card for each
signal pin
CCAR
D
10 pF
Maximum signal line inductance 16 nH fpp<20 MHz
Pull-up resistance inside card (pin1) RDAT3
10 90 k May be used for
card detection
Power Up Time
Host needs to keep power line level less than 0.5V and more than 1ms before power ramp up.
Power On or Power Cycle
Followings are requirements for Power on and Power cycle to assure a reliable SD Card hard reset.
(1) Voltage level shall be below 0.5V
(2) Duration shall be at least 1ms.
Power Supply Ramp Up
The power ramp up time is defined from 0.5V threshold level up to the operating supply voltage which is
stable between VDD (min.) and VDD (max.) and host can supply SDCLK.
Followings are recommendation of Power ramp up:
(1) Voltage of power ramp up should be monotonic as much as possible.
(2) The minimum ramp up time should be 0.1ms.
(3) The maximum ramp up time should be 35ms for 2.7-3.6V power supply.
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Power Down and Power Cycle
(1) When the host shuts down the power, the card VDD shall be lowered to less than 0.5Volt for a
minimum period of 1ms. During power down, DAT, CMD, and CLK should be disconnected or driven
to logical 0 by the host to avoid a situation that the operating current is drawn through the signal
lines.
(2) If the host needs to change the operating voltage, a power cycle is required. Power cycle means the
power is turned off and supplied again. Power cycle is also needed for accessing cards that are
already in Inactive State. To create a power cycle the host shall follow the power down description
before power up the card (i.e. the card VDD shall be once lowered to less than 0.5Volt for a
minimum period of 1ms).
\-\NTECH Emb'Core AC Characters r” Clock / m Inpul Output Shaded areas are not Vahd VIN Vn. cam cam cam cam cam cam cam cam
SQFlash
Industrial Class 10 Micro SD Card
Specifications subject to change without notice, contact your sales representatives for the most update information.
REV 0.3 Page 14 of 22 May. 4, 2016
9. AC Characters
microSD Interface timing (Default)
Parameter Symbol Min Max Unit Remark
Clock CLK (All values are referred to min(VIH) and max(VIL)
Clock frequency Data Transfer Mode fPP 0 25 MHz Ccard 10 pF
(1 card)
Clock frequency Identification Mode fOD 0(1)/100 400 kHz Ccard 10 pF
(1 card)
Clock low time tWL 10 ns Ccard 10 pF
(1 card)
Clock high time tWH 10 ns Ccard 10 pF
(1 card)
Clock rise time tTLH 10 ns Ccard 10 pF
(1 card)
Clock fall time tTHL 10 ns Ccard 10 pF
(1 card)
Inputs CMD, DAT (referenced to CLK)
Input set-up time tISU 5 ns Ccard 10 pF
(1 card)
Input hold time tIH 5 ns Ccard 10 pF
(1 card)
Outputs CMD, DAT (referenced to CLK)
Output Delay time during Data
Transfer Mode tODLY 0 14 ns CL 40 pF
(1 card)
Output Delay time during
Identification Mode tODLY 0 50 ns CL 40 pF
(1 card)
(1) 0Hz means to stop the clock. The given minimum frequency range is for cases were continues clock
is required.
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SQFlash
Industrial Class 10 Micro SD Card
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REV 0.3 Page 15 of 22 May. 4, 2016
microSD Interface Timing (High-Speed Mode)
Card Input Timing (High Speed Card)
Card Output Timing (High Speed Mode)
Parameter Symbol Min Max Unit Remark
Clock CLK (All values are referred to min(VIH) and max(VIL)
Clock frequency Data Transfer
Mode fPP 0 50 MHz Ccard 10 pF
(1 card)
Clock low time tWL 7 ns Ccard 10 pF
(1 card)
Clock high time tWH 7 ns Ccard 10 pF
(1 card)
Clock rise time tTLH 3 ns Ccard 10 pF
(1 card)
Clock fall time tTHL 3 ns Ccard 10 pF
(1 card)
Inputs CMD, DAT (referenced to CLK)
Input set-up time tISU 6 ns Ccard 10 pF
(1 card)
Input hold time tIH 2 ns Ccard 10 pF
(1 card)
Outputs CMD, DAT (referenced to CLK)
Output Delay time during Data
Transfer Mode tODLY 14 ns CL 40 pF
(1 card)
Output Hold time TOH 2.5 ns CL 15 pF
(1 card)
Total System capacitance of
each line¹ CL 40 pF CL 15 pF
(1 card)
(1) In order to satisfy severe timing, host shall drive only one card.
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SQFlash
Industrial Class 10 Micro SD Card
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REV 0.3 Page 16 of 22 May. 4, 2016
microSD Interface timing (SDR12, SDR25, SDR50 and SDR104 Modes)
Input
Symbol Min Max Unit Remark
tCLK 4.80 0 ns 208MHz (Max.), Between rising edge, VCT= 0.975V
tCR, tCF - 0.2 * tCLK ns tCR, tCF < 2.00ns (max.) at 100MHz, CCARD=10pF
Clock Duty 30 70 %
Clock Signal Timing
SDR50 and SDR104 Input Timing
Symbol Min Max Unit SDR104 Mode
tls 1.40 - ns CCARD =10pF, VCT= 0.975V
tlH 0.80 - ns CCARD =5pF, VCT= 0.975V
Symbol Min Max Unit SDR50 Mode
tls 3.00 - ns CCARD =10pF, VCT= 0.975V
tlH 0.80 - ns CCARD =5pF, VCT= 0.975V
Card Input Timing
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SQFlash
Industrial Class 10 Micro SD Card
Specifications subject to change without notice, contact your sales representatives for the most update information.
REV 0.3 Page 17 of 22 May. 4, 2016
Output Timing of Variable Window (SDR104)
Symbol Min Max Unit Remark
tOP 0 2 Ul Card Output Phase
tOP -350 +1550 ps Delay variable due to temperature change after tuning
tODW 0.60 - Ul tODW=2.88ns at 208MHz
Output Timing of Fixed Data Window
SD Interface timing (DDR50 Modes)
Symbol Min Max Unit Remark
tCLK 20 - ns 50MHz (Max.), Between rising edge
tCR, tCF - 0.2 * tCLK ns tCR, tCF < 4.00ns (max.) at 50MHz, CCARD=10pF
Clock Duty 45 55 %
Clock Signal Timing
Timing Diagram DAT Inputs / Outputs Referenced to CLK in DDR50 Mode
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Industrial Class 10 Micro SD Card
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Parameter Symbol Min Max Unit Remark
Input CMD (referenced to CLK rising edge)
Input set-up time tISU 6 - ns Ccard 10 pF
(1 card)
Input hold time tIH 0.8 - ns Ccard 10 pF
(1 card)
Output CMD (referenced to CLK rising edge)
Output Delay time during Data
Transfer Mode tODLY 13.7 ns Ccard 30 pF
(1 card)
Output Hold time tOH 1.5 - ns Ccard 10 pF
(1 card)
Inputs DAT (referenced to CLK rising and falling edges)
Input set-up time tISU2X 3 - ns Ccard 10 pF
(1 card)
Input hold time tIH2X 0.8 - ns Ccard 10 pF
(1 card)
Outputs CMD, DAT (referenced to CLK)
Output Delay time during Data
Transfer Mode tODLY2X - 7.0 ns CL 25 pF
(1 card)
Output Hold time tOH2X 1.5 - ns CL 15 pF
(1 card)
AD\-\NTECH Emb'Core Dimensions
SQFlash
Industrial Class 10 Micro SD Card
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REV 0.3 Page 19 of 22 May. 4, 2016
10. Dimensions
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SQFlash
Industrial Class 10 Micro SD Card
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AD\-\NTECH Emb'Core Aggendix: Part Number Table
SQFlash
Industrial Class 10 Micro SD Card
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REV 0.3 Page 21 of 22 May. 4, 2016
Appendix: Part Number Table
Product Advantech PN
SQF MICRO SD C10 SLC 128M (0~70°C) SQF-MSDS1-128M-21C
SQF MICRO SD C10 SLC 256M (0~70°C) SQF-MSDS1-256M-21C
SQF MICRO SD C10 SLC 512M (0~70°C) SQF-MSDS1-512M-21C
SQF MICRO SD C10 SLC 1G (0~70°C) SQF-MSDS1-1G-21C
SQF MICRO SD C10 SLC 2G (0~70°C) SQF-MSDS1-2G-21C
SQF MICRO SD C10 SLC 128M (-40~85°C) SQF-MSDS1-128M-21E
SQF MICRO SD C10 SLC 256M (-40~85°C) SQF-MSDS1-256M-21E
SQF MICRO SD C10 SLC 512M (-40~85°C) SQF-MSDS1-512M-21E
SQF MICRO SD C10 SLC 1G (-40~85°C) SQF-MSDS1-1G-21E
SQF MICRO SD C10 SLC 2G (-40~85°C) SQF-MSDS1-2G-21E
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Industrial Class 10 Micro SD Card
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MLC
Product Advantech PN
SQF MICRO SD C10 MLC 4G (-25~85°C) SQF-MSDM1-4G-21C
SQF MICRO SD C10 MLC 8G (-25~85°C) SQF-MSDM1-8G-21C
SQF MICRO SD C10 MLC 16G (-25~85°C) SQF-MSDM1-16G-21C
SQF MICRO SD C10 MLC 32G (-25~85°C) SQF-MSDM1-32G-21C
SQF MICRO SD C10 MLC 64G (-25~85°C) SQF-MSDM1-64G-21C
SQF MICRO SD C10 MLC 4G (-40~85°C) SQF-MSDM1-4G-21E
SQF MICRO SD C10 MLC 8G (-40~85°C) SQF-MSDM1-8G-21E
SQF MICRO SD C10 MLC 16G (-40~85°C) SQF-MSDM1-16G-21E
SQF MICRO SD C10 MLC 32G (-40~85°C) SQF-MSDM1-32G-21E
SQF MICRO SD C10 MLC 64G (-40~85°C) SQF-MSDM1-64G-21E
Ultra MLC
Product Advantech PN
SQF MICRO SD C10 UMLC 2G (-25~85°C) SQF-MSDU1-2G-21C
SQF MICRO SD C10 UMLC 4G (-25~85°C) SQF-MSDU1-4G-21C
SQF MICRO SD C10 UMLC 8G (-25~85°C) SQF-MSDU1-8G-21C
SQF MICRO SD C10 UMLC 16G (-25~85°C) SQF-MSDU1-16G-21C
SQF MICRO SD C10 UMLC 32G (-25~85°C) SQF-MSDU1-32G-21C
SQF MICRO SD C10 UMLC 2G (-40~85°C) SQF-MSDU1-2G-21E
SQF MICRO SD C10 UMLC 4G (-40~85°C) SQF-MSDU1-4G-21E
SQF MICRO SD C10 UMLC 8G (-40~85°C) SQF-MSDU1-8G-21E
SQF MICRO SD C10 UMLC 16G (-40~85°C) SQF-MSDU1-16G-21E
SQF MICRO SD C10 UMLC 32G (-40~85°C) SQF-MSDU1-32G-21E

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