
May 2017
RF MANUAL 20TH EDITION
Application and design manual for Smart Antenna Solutions

2NXP Semiconductors RF Manual 20th edition
At NXP, we are committed to ensuring you have the best
mobile connection at all times.
RF integration without compromise
With more than 3 Billion consumers online and over 50 Billion connected
devices, the demand for always-on, always-connected devices continues
to surge. With access to the internet by mobile device increasing by more
than 200% every year, mobile device manufacturers and infrastructure
network vendors now face unprecedented challenges to deliver the high
performance voice and data services for all the downloading, streaming
and cloud based services we have come to expect.
RF front-ends are becoming increasingly complex with the rapid
deployment of LTE underway. More antennas are needed as well as
support for an ever increasing number of cellular frequency bands. Just
a few years ago only a handful of bands would need to be supported,
whereas now 30+ bands are supported. To address all these RF
challenges, while simultaneously achieving miniaturization and cost
reduction, a new approach is needed.
The 20th edition of the RF Manual provides you with a comprehensive
overview of our Smart Antenna Solutions with the highest level of
integration without compromise; High performance, fully integrated
combinations of multiple RF functions close to the antennas, delivering
the highest, flawless performance, reliability, flexibility, quality or cost-
of-ownership.

3NXP Semiconductors RF Manual 20th edition
How to use the RF Manual
This document is a resource that lets you explore our RF portfolio.
Chapter 1 – Products by application
Discusses trends and requirements for particular applications,
and lists the products we recommend for target systems.
Chapter 2 – NXP technologies
Describes the special process and packaging technologies that
position us as a leader in RF.
Chapter 3 – Products by category
Presents products by function, with detailed specs for easy
comparison.
Chapter 4 – Design resources
Summarizes the design-support resources that help make it
easier to work with our products and reduce time-to-market.
Chapter 5 – Replacement for discontinued parts
Provides an overview of recently discontinued parts and their
(close) replacements from NXP.
Chapter 6 – Packaging information
Gives an overview of the packages and the marking codes.
Chapter 7 – Products by NXP type number
Gives all the NXP type numbers mentioned in this manual, in
alphanumeric order, so you can quickly find the details for a
specific product.
RF Manual web page
www.nxp.com/rfmanual

4NXP Semiconductors RF Manual 20th edition
Contents
1 Products by application 8
1.1 New products _______________________________________________________________________________________________________________________________________________________________________________________________________ 8
1.2 Wireless connectivity mobile & wearable ___________________________________________________________________________________________________________________________________________________________ 9
1.2.1 WLAN for mobile & wearable application _________________________________________________________________________________________________________________________________________________ 9
1.2.2 LTE LNA ____________________________________________________________________________________________________________________________________________________________________________________________________10
1.2.3 GPS for smartphones, tablets and wearables __________________________________________________________________________________________________________________________________________11
1.3 Wireless communication infrastructure _____________________________________________________________________________________________________________________________________________________________14
1.3.1 Base stations (all cellular standards and frequencies) _____________________________________________________________________________________________________________________________14
1.3.2 Repeater ___________________________________________________________________________________________________________________________________________________________________________________________________16
1.3.3 Small cells _________________________________________________________________________________________________________________________________________________________________________________________________17
1.4 Broadband communication infrastructure and TV _____________________________________________________________________________________________________________________________________________18
1.4.1 WLAN: access points and routers, fixed consumer electronics _______________________________________________________________________________________________________________18
1.4.2 Cable modem and set-top boxes based on DOCSIS 3.0 & 3.1 ________________________________________________________________________________________________________________19
1.4.3 Network Interface Module (NIM) for TV reception _________________________________________________________________________________________________________________________________ 20
1.4.4 Optical mini- and midi-node line-up ________________________________________________________________________________________________________________________________________________________21
1.4.5 Broadband line extenders _______________________________________________________________________________________________________________________________________________________________________ 22
1.5 Satellite _______________________________________________________________________________________________________________________________________________________________________________________________________________ 23
1.5.1 Satellite outdoor unit, QUAD LNB with integrated mixer/oscillator/downconverter/switch matrix ________________________________________________________ 23
1.5.2 Satellite outdoor unit, twin LNB with integrated mixer/oscillator/downconverter ___________________________________________________________________________________24
1.5.3 Satellite outdoor unit, twin LNB with discrete components ___________________________________________________________________________________________________________________ 25
1.5.4 Satellite multi-switch box - 4 x 4 (up to 16 x 16)/DiSEqC/SMATV _____________________________________________________________________________________________________________26
1.5.5 VSAT with integrated mixer/oscillator/downconverter _____________________________________________________________________________________________________________________________27
1.6 Generic RF front-end for IOT _____________________________________________________________________________________________________________________________________________________________________________ 29
1.7 Automotive ______________________________________________________________________________________________________________________________________________________________________________________________________31
1.7.1 Remote Keyless Entry (RKE), RF generic front-end with dedicated antenna for reception and transmission _________________________________________31
1.7.2 Tire-pressure monitoring system _____________________________________________________________________________________________________________________________________________________________32
1.7.3 SDARS and HD radio _______________________________________________________________________________________________________________________________________________________________________________ 33
2 Technologies 35
2.1 Looking for a leader in SiGe:C? You just found us! ___________________________________________________________________________________________________________________________________________ 35
2.2 High-performance, small-size packaging __________________________________________________________________________________________________________________________________________________________ 36
3 Products by function 39
3.1 RF ICs _________________________________________________________________________________________________________________________________________________________________________________________________________________ 39
3.1.1 RF MMIC amplifiers and mixers ________________________________________________________________________________________________________________________________________________________________39
3.1.2 Wideband amplifiers ________________________________________________________________________________________________________________________________________________________________________________42
3.1.3 Variable gain and discrete step amplifiers ______________________________________________________________________________________________________________________________________________ 43
3.1.4 Power amplifiers ______________________________________________________________________________________________________________________________________________________________________________________ 44
3.1.5 Modulators, mixers, PLL and downconverters ________________________________________________________________________________________________________________________________________ 44
3.2 RF Bipolar transistors ________________________________________________________________________________________________________________________________________________________________________________________ 46
3.2.1 Wideband transistors ______________________________________________________________________________________________________________________________________________________________________________ 46
3.3 RF diodes ____________________________________________________________________________________________________________________________________________________________________________________________________________ 49
3.3.1 Varicap diodes __________________________________________________________________________________________________________________________________________________________________________________________49
3.3.2 PIN diodes _______________________________________________________________________________________________________________________________________________________________________________________________ 50
3.3.3 Band-switch diodes __________________________________________________________________________________________________________________________________________________________________________________52
3.4 RF MOS transistors ____________________________________________________________________________________________________________________________________________________________________________________________ 53
3.4.1 JFETs _______________________________________________________________________________________________________________________________________________________________________________________________________ 53
3.4.2 MOSFETs _________________________________________________________________________________________________________________________________________________________________________________________________ 54

5NXP Semiconductors RF Manual 20th edition
4 Design support 57
4.1 Explore NXP's RF portfolio ________________________________________________________________________________________________________________________________________________________________________________ 57
4.2 Product selection on NXP.com __________________________________________________________________________________________________________________________________________________________________________ 57
4.3 Product evaluation _____________________________________________________________________________________________________________________________________________________________________________________________ 57
4.4 Additional design-in support _____________________________________________________________________________________________________________________________________________________________________________ 58
4.5 Application notes _______________________________________________________________________________________________________________________________________________________________________________________________ 58
4.6 Simulation models ______________________________________________________________________________________________________________________________________________________________________________________________ 64
5 Replacement for discontinued parts _____________________________________________________68
5.1 Cross-references: NXP discontinued types versus NXP replacement types ___________________________________________________________________________________________________ 68
6 Packing and packaging information ______________________________________________________70
6.1 Packing quantities per package with relevant ordering codes _________________________________________________________________________________________________________________________70
6.2 Marking codes _____________________________________________________________________________________________________________________________________________________________________________________________________71
7 Product index __________________________________________________________________________73

6NXP Semiconductors RF Manual 20th edition
LEADING IN ADVANCED
RF SOLUTIONS
We're trusted by the world's top businesses. That's why 9 out
of the top 10 smartphone OEMs use NXP GPS LNAs.

7NXP Semiconductors RF Manual 20th edition
Products
by application
In Focus: BL SAS new type naming convention
As one of the industry’s leading technology company, NXP is constantly looking for ways to improve our products and our
accessibility to those evaluating our products. One way that we’ve improved accessibility is by creating a new naming convention
for the Smart Antenna Solutions portfolio. The parts you’re already ordering will not change. However, new part numbers will
follow a simple and consistent structure to make it easier for you to identify and order in the future.
1. The first set of letters in the new part
numbers represent the market: LTE,
WLAN, GPS, BTS for Basestation and
small cell, MMW for millimeter Wave, and
RDR for our line of Radar products.
2. The next two numerical digits identify the
product’s function, like LNA, MPA, etc,
see picture.
3. The last two numerical digits are like
a serial number used e.g. to indicate
revision history.
4. As the frequency is one of the most
important aspects in the smart antenna
domain, the next alpha digit indicates
frequency of the part, like H for 2 – 2.8
GHz, K for 12 - 40 GHz, etc, see below.
5. And lastly, if the part comes in a CSP package, it will be indicated by the letter C.
To get used to this new type naming methodology more quickly, we selected our 55 most important products and ‘translated’
them according the new naming convention. You will see them often be communicated next to each other (dual branding). We’re
confident this will not only be easier to understand but will make ordering simple.
New Name Current Type New Name Current Type New Name Current Type
BTS1001H BGU8053 GPS1102M BGU7007 LTE3301HC BGS8H5UK
BTS1001L BGU8051 GPS1103M BGU7004 LTE3301L BGS8L5
BTS1001M BGU8052 GPS1104M BGU7008 LTE3301LC BGS8L5UK
BTS3001H BGU8063 GPS1201M BGU8009 LTE3301U BGS8U5
BTS3001L BGU8061 GPS1202M BGU8019 LTE4101YC BGS613L5UK
BTS3001M BGU8062 GPS1203M BGU8019W/N2 LTE4102YC BGS613H5UK
BTS5001H BGU7075 GPS1301M BGU8103 LTE4201YC BGS8LL5UK
BTS5001M BGU7073 GPS1401M BGU8309 LTE4202YC BGS8LH5UK
BTS5002M BGU7078 LTE1001H BGU8H1 LTE4203YC BGS8HH5UK
BTS5101M BGU8812 LTE1001L BGU8L1 LTE5001HC BGS829H6UK
BTS5201H BGU8823 LTE1001M BGU8M1 LTE5001LC BGS829L6UK
BTS5201L BGU8821 LTE1001MC BGU8M1UK LTE5001MC BGS829M6UK
BTS5201M BGU8822 LTE3001H BGS8H2 LTE5101HC BGS839H6UK
BTS6001A BGA7210 LTE3001L BGS8L2 WLAN3001C BGS8358
BTS8001A BGX7101HN/1 LTE3001M BGS8M2 WLAN3001H BGS8324
GPS1001M BGU6005/N2 LTE3101MC BGS8M4UK WLAN3101C BGS8458
GPS1002M BGU6009/N2 LTE3201HC BGS6H5UK WLAN3101H BGS8424
GPS1101M BGU7005 LTE3301C BGS8C5 WLAN7001C BGF8458
LTE3301H BGS8H5 WLAN7002C BGF8658
F
U
N
C
T
I
O
N
M
A
R
K
E
T
S
E
R
I
A
L
N
U
M
B
E
R
P
A
C
K
A
G
E
F
R
E
Q
U
E
N
C
Y
I
N
G
H
z
LTE1001MC
Learn more on SharePoint: BL SAS – Marketing & Sales – Marketing Public Documents
0 = Passive
1 = LNA
2 = To be defined
3 = LNA Bypass
4 = Multi LNA + SW
5 = LNA, DSA, VGA / Multi LNA,
SW, MIPI, MUX
6 = MPA
7 = FEIC
8 = LNA, VCO, PLL, MIX, IF
9 = ABF
A = ALL
L = 0.7 —— 1
M = 1.4 —— 2
H = 2 —— 2.8
U = 3 —— 4
C = 4 —— 8
X = 8 —— 12
K = 12 —— 40
V = 40 —— 75
W = 75 —— 100
Y = Multi frequency
C = CSP
LTE = LTE
WLAN = Wireless LAN
GPS = GPS
BTS = Basestation / Small Cell
MMW = mmWave
RDR = Radar
C
M
Y
CM
MY
CY
CMY
K

8NXP Semiconductors RF Manual 20th edition
1. Products by application
NXP RF product catalog:
http://www.nxp.com/rf
1.1 New products
DEV = in DEVelopment
CQS = Customer Qualification Samples
RFS = Released For Supply
Type New name Application/description
Expected
status
June 2015
Planned
release Section
NEW: SiGe:C LNAs (for e.g. GPS)
BGU8103 GPS1301M GPS LNA, low current 1 mA RFS released 3.1.1
BGU8309 GPS1401M GPS LNA, small package (0.8 x 0.8 mm2) RFS released 3.1.1
NEW: LNAs for LTE
BGS8L5 LTE3301L LTE LNA with bypass from 0.7 to 1 GHz, 0.7 dB NF, 15 dB gain DEV Q2-2017 3.1.1
BGS8M5 LTE3301H LTE LNA with bypass from 1.5 to 2.7 GHz, 0.8 dB NF, 14 dB gain DEV Q2-2017 3.1.1
BGS8C5 LTE3301C LTE LNA with bypass from 3.4 to 3.8 GHz, 1.0 dB NF, 16 dB gain DEV Q2-2017 3.1.1
BGS8U5 LTE3301U LTE LNA with bypass from 5.1 to 5.95 GHz, 1.25 dB NF, 15 dB gain DEV Q2-2017 3.1.1
-LTE3401L LTE LNA with bypass from 0.7 to 1 GHz, 0.85 dB NF, 18 dB gain DEV Q2-2017 3.1.1
NEW: LNAs for WLAN
BGS8324 WLAN3001H 2.4 GHz LNA for WLAN, 802.11b/g/n RFS released 3.1.1
BGS8358 WLAN3001C 5 GHz LNA for WLAN, 802.11a/n/ac RFS released 3.1.1
BGS8424 WLAN3101H 2.4 GHz LNA for WLAN, 802.11b/g/n, small package RFS released 3.1.1
BGS8458 WL AN3101C 5 GHz LNA for WLAN, 802.11a/n/ac, small package RFS released 3.1.1
BGF8458 WLAN7001C 5 GHz FEIC for WLAN, 802.11a/n/ac DEV Q2-2017 3.1.1
NEW: LNAs for wireless infrastructures
BGU7078 BTS5101H Variable gain high-linearity LNA 2.3-2.6 GHz, 1.1 dB NF RFS released 3.1.1
BGU8061 BTS3001L High-linearity LNA with bypass 0.3-1.5 GHz, 1.1 dB NF RFS released 3.1.1
BGU8062 BTS3001M High-linearity LNA with bypass 1.5-2.5 GHz, 1.3 dB NF RFS released 3.1.1
BGU8063 BTS3001H High-linearity LNA with bypass 2.5-4.0 GHz, 1.6 dB NF RFS released 3.1.1
NEW: DOCSIS Cable Modem
BGA3131 -DOCSIS 3.1 upstream amplifier RFS released 3.1.3

9NXP Semiconductors RF Manual 20th edition
Products
by application
1.2.1 WLAN for mobile & wearable application
Application diagram for WLAN
aaa-00704
2
WLAN
RF
BB B
B
B
B
2 GHz
5 GHz
Product highlight:
WLAN LNAs plus switch BGS8424 [WLAN3101H]
and BGS8458 [WLAN3101C]
These fully integrated LNAs plus switch are optimized for mobile
IEEE 802.11b/g/n/ac WLAN applications in the 2.4 and 5 GHz bands.
Manufactured in our high-performance QUBiC4 GEN8 technology,
they combine best-in-class gain, noise figure, linearity for the LNA
and an integrated RX/TX(/BT) switch with the process stability and
ruggedness that SiGe technology is known for.
Features
` Fully integrated, high-performance LNA and switch (no external
matching or DC blocking required)
` LNA Noise Figure (NF) of 2.0 dB (2.4 GHz) and 2.4 dB (5 GHz), with
low current consumption of 8.4 resp. 10.7 mA
`Integrated TX-RX(-BT) switch with low losses (0.7 dB)
`Low bypass current of 8 resp. 4 μA
` Single-supply operation covering full Li-ion battery range from 2.7
to 5.25 V
` Small QFN-style package (1.5 x 1.5 x 0.3 resp. 1.2 x 1.4 x 0.3 mm,
0.4 mm pitch)
1.2 Wireless connectivity mobile & wearable
Function Product gain (dB) NF (dB) IIP3 (dB) Package Type New name
2.4 GHz LNA + switch MMIC 16 @ 8.3 mA 2.0 7SOT1261 BGS8324 WLAN3001H
15.5 @ 8.4 mA 2.0 6SOT1261 BGS8424 WLAN3101H
5 GHz LNA + switch MMIC 12.5 @ 9.5 mA 2.3 10 SOT1260 BGS8358 WL AN3001C
13.5 @ 10.7 mA 2.4 9SOT1234 BGS8458 WLAN3101C
Function Product gain (dB) NF (dB) Pout (dB) Package Type New name
5 GHz FEIC MMIC 14 @ 8 mA 2.3 SOT1436 BGF8458 WLAN7001C
For the complete product selection please see section 3.1.1
Recommended products

10 NXP Semiconductors RF Manual 20th edition
1.2.2 LTE LNA
While LTE/4G offers consumers much higher data rates (up to 300 Mbits/s) compared to UMTS/3G, LTE smartphones are more
complex because they need more antennas, are used for multiple cellular and connectivity frequencies, and require additional
switches and duplexers. BGS8x2 and BGU8x1 LTE LNAs increase the receive sensitivity of LTE main and diversity receivers by
offering system-optimized gain, low noise figure, and high third-order linearity. As a result, LTE smartphone users enjoy higher and
more consistent data rates. These features also mean RF designers have more options, as they can amplify the LTE signal close
to the antenna and decrease line losses - something that is especially important for large tablet and combination phone/tablet
("phablet") form factors. The BGU8x1 and BGS8x2 LTE LNAs are available for Low (BGU8L1, BGS8L2), Mid (BGU8M1, BGS8M2)
and High (BGU8H1, BGS8H2) cellular bands. The difference between the BGS8x2 and the BGU8x1 is that the BGS8x2 has a switch
to bypass the LNA. This is beneficial when high RF signal levels are available at the input and there is no need for additional gain,
because the LNA can be bypassed and switched off to lower the power consumption.
Application diagram of an LTE LNA in a mobile phone
Switch,
filters
and
diplexers
Main
Antenna
TxRx
IC
Diversity
Antenna
Switch
and
filters
Product highlight:
LTE LNAs with bypass BGS8x5 [LTE3301x]
The BGS8x5 delivers a full range of LTE LNAs covering the full
LTE(-U) frequency range from 700 MHz up 6 GHz with products,
each optimized for a sub-range of frequencies. The BGS8x5 can
be applied in both primary and diversity path of LTE receivers to
deliver better sensitivity under severe co-existence conditions (e.g.
simultaneous cellular TX in FDD systems). The bypass switch allows
to switch off the LNA under higher input signal conditions, thereby
reducing the current consumption to less than 1 uA. The BGS8x2
requires only one external matching inductor.
Features
`Smallest 6-pin leadless package (1.1 mm x 0.7 mm x 0.37mm)
` Cover all bands with a Low (from 700 to 960 MHz), High (from 1425
to 2700 MHz), Ultra High (from 3400 to 3800 MHz) and C-band (from
5150 to 5850 MHz)
` Noise figure (NF) between 0.7 and 1.25 dB at a gain between 13 and
15.5 dB
` Current consumption of 4.5 mA in gain mode, < 1 uA in bypass mode
`High linearity (1 dB compression point and IIP3)
`Supply voltage from 1.5 to 3.1 V
`Require only one input matching inductor
Recommended products
Function Product Frequency (MHz) Gain (dB) NF (dB) Package Type New name
LNA MMIC
728 - 960 14 0.7
SOT1232
BGU8L1* LTE1001L
1805 - 2200 13 0.8 BGU8M1* LTE1001M
2300 - 2690 13 0.9 BGU8H1* LTE10 01H
LNA
+
bypass
MMIC
728 - 960 13 0.85 BGS8L2 LTE30 01L
1805 - 2200 14.4 0.85 BGS8M2* LTE30 01M
2300 - 2690 12.5 1.0 BGS8H2* LTE3001H
703 - 960 13.6 0.7 BGS8L5* LTE3301L
1425-2690 13.1 0.75 BGS8H5* LTE33 01H
3400 - 3800 15.5 1.0 BGS8U5 LTE3301U
5150 - 5850 15 1.25 BGS8C5 LTE3301C
703-960 18 0.85 -LTE3401L
* also available in CSP package, contact NXP for detailed information on specifications
For the complete product selection please see section 3.1.1

11NXP Semiconductors RF Manual 20th edition
Products
by application
Product highlight:
GPS LNA in diamond package BGU8309 [GPS1401M]
The BGU8309 [GPS1401M] has all the features of its predecessors
put into smaller diamond shaped package. It features adaptive biasing
to have optimal linearity versus current consumption performance in
co-existence scenarios with radios in mobile phones. In nominal,
non-jamming conditions it delivers 17dB gain at a noise figure of
0.7 dB. The BGU8309 requires only one external matching inductor.
Features
`Smallest 5-pin leadless package (0.8 x 0.8 x 0.35 mm)
`Covers full GNSS L1 band, from 1559 to 1610 MHz
`Noise figure = 0.7 dB at a gain of 17 dB
`
High 1 dB compression point of -9 dBm and out-of-band IP3i of 5 dBm
`Supply voltage 1.5 to 3.1 V, supply current 3.6 mA
`Power-down mode current consumption < 1 uA
`Integrated, temperature-stabilized bias for easy design
BGU600x/700x/800x LNAs are designed to improve the linearity, noise figure, and reception of GPS signals, including GloNass
and Compass, while offering the smallest footprint in the market. As the industry’s first GPS LNAs to dynamically suppress strong
cellular, Bluetooth, and WLAN transmit signals, the NXP BGU600x/700x/800x series offers the best reception for weak
GPS signals, delivering an improvement of 10 dB or better IP3 under -40 to -20 dBm jamming conditions, while the noise figure
remains below 1 dB. Requiring only one external component, the BGU600x/700x/800x LNAs save up to 70% in PCB size and
10% in component cost.
GPS is a standard feature in a wide range of consumer products, from smartphones, wearables, and tablets to digital still cameras,
watches, electric cars, and more. GPS signal power levels are weak and below the noise floor at -155 dBm. In many of these
products, especially smartphones and tablets, strong transmitters such as Bluetooth, WLAN, and cellular can drive the GPS LNA
into compression. When the GPS LNA is in compression, it has lower gain, which causes poor GPS reception; it also generates
inter-modulation products and harmonics from the transmitter signals, capable of overpowering weak signals and leading to
loss of GPS reception.
The BGU600x/700x/800x series use adaptive biasing to immediately detect any output power from jammers, and compensate
by temporarily increasing the current. As a result, optimal GPS signal reception is maintained for as long as possible. Each device
in the BGU700x/800x series requires only one input-matching inductor and an optional one supply decoupling capacitor to
complete the design. This creates a very compact design and lowers the bill of materials.
1.2.3 GPS for smartphones, tablets and wearables
Application diagram of a GNSS LNA with pre- and post-SAWs and notches, implemented as discretes, for 788 MHz (LTE)
and 2.4 GHz (WLAN) suppression
aaa-007041
ESD protection SAW
SAW
2.4 GHz notch (WLAN, bluetooth)
788 MHz notch (LTE)
SAW
GNSS
LNA
L1
C1
Ven
VCC
RF out
to GNSS chipset

12 NXP Semiconductors RF Manual 20th edition
Recommended products
Function Product Icc (mA) Gain (dB) NF (dB) Package Type New name
value LNA
MMIC
5.2 17. 5 0.85 SOT886 BGU6005 GPS1001M
5.1 17.0 0.9 SOT1230 BGU6009 GPS1002M
mid end LNA 4.5 16.5 0.85 SOT886 BGU7005 GPS1101M
4.8 18.5 0.85 SOT886 BGU7007 GPS1102M
high end LNA
4.2 18.0 0.65 SOT1230 BGU8009* GPS1201M
4.6 18.5 0.55 SOT1232 BGU8019 GPS1202M
4.0 17. 0 0.7 SOT1226 BGU8309 GPS1401M
low current LNA 1.2 17.5 0.8 SOT1232 BGU8103* GPS1301M
automotive qualified
LNA
4.5 16.5 0.85 SOT886 BGU7004 GPS1103M
4.8 18.5 0.85 SOT886 BGU7008 GPS110 4M
* also available in CSP package, contact NXP for detailed information on specifications
For the complete product selection please see section 3.1.1
In wearable health and fitness applications like smart watches, low current is critical, but linearity requirements can be relaxed
since the only relevant on-board jammers are Bluetooth and 2.4 GHz WLAN. For these low-current applications, NXP offers the
BGU8010, which uses 3 mA of current and has a gain of 16 dB, the BGU8020, which uses 2 mA of current and has a gain of 16.5 dB,
and the BGU8103, which uses 1.2 mA of current and has a gain of 17 dB.
Application diagram of wearable health and fitness device, showing the input-match inductor (L1) and a post-SAW
Product highlight:
Low-current GPS LNA BGU8103
[GPS1301M]
Designed for extremely low power consumption, the BGU8103
delivers optimal performance even when exposed to jammers from
coexisting cellular and connectivity transmitters.
Features
`Covers full GNSS L1 band, from 1559 to 1610 MHz
`Noise figure (NF) = 0.85 dB
`Gain 17.3 dB
`Input 1 dB compression point of -16 dBm
`Out-of-band IP3i of -8 dBm
`Supply voltage 1.5 to 3.1 V
`Optimized performance at low supply current of 1.2 mA
`Power-down mode current consumption < 1 μA
L1
Ven Vcc
Post-SAW
GPS
Receiver IC
This application consists of the input match inductor L1 and a post SAW. Because no strong jammer signals are present,
a pre-SAW is unnecessary.

13NXP Semiconductors RF Manual 20th edition
Products
by application
NXP is committed to providing best-in-class RF solutions
that help you reach new levels of performance for
a smarter world.
ENHANCING RF
PERFORMANCE

14 NXP Semiconductors RF Manual 20th edition
1.3 Wireless communication infrastructur
ADC
PLL
VCO
DVGA
Att.
LO
Dual
DVGA
Transmitter
Dual
DAC
Dual
Mixer
090
PLL
VCO LNA
BP or LP IF-SAW
RF-SAW
MPA HPA
Dual
ADC
JEDEC
IF
JEDEC InterfaceJEDEC Interface
IQ-Modulator
I
Q
RF-BP
IF-SAW
Power Amplifier
RX2
TX / R X1
Digital
Front
End
DPD
CFR
DUC
DDC
Clock
Generator
Jitter Cleaner
OBSAI / CPR I
Digital Baseband
Tower -
Mounted
Amplifier
µC
Duplexer
Filter Unit
LNA +VGA
(JEDEC) Interface
DVGA Mixer+LO
LNA+VGA
Tx
Rx
1.3.1 Base stations (all cellular standards and frequencies)
RF components for transmit line-ups and receive chains
As a global leader in RF technology and component design, NXP Semiconductors offers a complete portfolio of RF products,
from low- to medium-power signal conditioning, that delivers advanced performance and helps simplify your design and the
development process. Our solutions range from discretes and amplifiers (LNA, VGA, MPA) to mixers/oscillators.
Application diagram of base station showing Tx, Rx, and Tx feedback functions
Tx functions are in the upper region, Rx in the lower, and Tx feedback in the middle.
Product highlight:
Base-station LNAs with ultra-low
noise BGU805x [BTS1001x]
The BGU8051, BGU8052, and BGU8053 SiGe:C BiCMOS LNAs are
designed to support high-performance communications systems from
300 up to 6000 MHz. Key enablers of maintaining sensitivity, even in
adverse signal conditions, are high linearity (37 dB OIP3), ultra-low
noise figures (e.g. 0.4 dB), and wideband S11<20 dB behavior. These
ultra-low noise amplifiers enable 2G/3G/4G macro and micro base-
station performance at unsurpassed value.
Features
` Three versions to cover low frequency (300 – 1500 MHz), mid
frequency (1500 – 2500 MHz) and high frequency (2500 – 6000 MHz)
ranges
`Very low Noise Figure 0.43 – 0.57 dB at a gain of 18 dB
` Very high linearity (1 dB compression point of 19dBm and IIP3 of 39
dBm) at 50 mA current consumption
`Supply voltage from 3.0 to 5.25 V
`Adjustable bias current through external resistor

15NXP Semiconductors RF Manual 20th edition
Products
by application
Recommended products
Function Product Frequency C
d
(pF) R
d
(Ω) IP3
O
(dBm) Package Type name New name
attenuator PIN diode <3GHz
0.23 240dBm SOT753 BAP64Q -
0.25 5.4 45dBm SOT753 BAP70Q -
0.23 2-Various* BAP64 -
Function Product Frequency range NF (dB) Gain (dB) IP3O (dBm) Package Type name New name
LNA
transistor
<6 GHz 0.65 @1.8 GHz 20.5 @1.8 GHz 34 @ 1.8 GHz
SOT343F
BFU690F -
<12 GHz 1.3 @ 12 GHz 12.5 @ 12 GHz 11 @ 12 GHz BFU730F -
<12 GHz 0.5 @ 2.4 GHz 22 @ 2.4 GHz 32 @ 2.4 GHz BFU760F -
<12 GHz 0.4 @ 1.8 GHz 19.5 @ 1.8 GHz 33 @ 1.8 GHz BFU790F -
MMIC
0.3-1.5 GHz 0.43 @ 900 MHz 18.1 38.9
SOT1327
BGU8051 BTS1001L
1.5-2.5 GHz 0.54 @ 1900 MHz 18.4 35.7 BGU8052 BTS1001M
2-6 Ghz 0.57 @ 2500 MHz 18.4 36.0 BGU8053 BTS1001H
LNA + bypass MMIC
0.3-1.5 GHz 1.1 @ 900 MHz 20.5 36.5
SOT650
BGU8061 BTS3001L
1.5-2.5 GHz 1.3 @ 1500 MHz 18.5 36 BGU8062 BTS3001M
2.7-4 GHz 1.6 @ 2500 MHz 19 34.5 BGU8063 BTS3001H
Function Product Frequency range NF (dB) Gain range (dB) IP3i (dBm) Package Type name New name
LNA + VGA MMIC
0.699-0748 GHz 0.7 @ 700 MHz
0 - 35
0 @ 700 MHz
SOT1301
BGU7060 -
0.770-0.915 GHz 0.75 @ 900 MHz 2 @ 900 MHz BGU7061 -
1.71-1.785 GHz 0.77 @1750 MHz 1 @ 1750 MHz BGU7062N2 -
1.92-1.98 GHz 0.9 @ 1950 MHz 0.9 @ 1950 MHz BGU7063 -
1.85-2.01 GHz 0.9 @ 1950 MHz 1 @ 1950 MHz BGU7073 BTS5001M
2.305-2.57 GHz 1.1 @ 2535 MHz 0.8 @ 2535 MHz BGU7075 BTS5001H
1.71-1.785 GHz 0.8 @ 1750 MHz 1.9 @ 1750 MHz BGU7078 BTS5002M
Function Product Frequency range Gain (dB) IP3O (dBm) Gain range (dB) Package Type name New name
Single VGA MMIC 0.7-3.8 GHz 30 dB 39dBm 0.7-1.4GHz 31.5 dB step 0.5dB SOT167 BGA7210 BTS6001A
0.4-2.75 GHz 18.5 dB 38dBm 0.4-0.7GHz 31.5 dB step 0.5dB BGA7204 -
Dual IF VGA MMIC 50-250 MHz 18.5 dB 43dBm @ 172MHz 24 dB step 1dB SOT167 BGA7350 -
50-500 MHz 22 dB 46 dBm @ 172MHz 28 dB step 1dB BGA7351 -
Function Product Power (W) PL, 1dB (dBm) Gain (dB) IP3O (dBm) Package Type name New name
MPA MMIC
0.25 25.5 @ 2140 MHz 15 38.5 SOT89 BGA7024 -
0.5 28 @ 2140 MHz 11 42.5 BGA7027 -
0.25 25 @ 940 MHz 16 37.5
SOT908
BGA7124 -
0.5 28 @ 2140 MHz 12 42 BGA7127 -
130.5 @ 740 MHz 20 42.5 BGA7130 -
Function Product Frequency range Conversion Gain PL, 1dB (dBm) IP3i (dBm) Package Type New name
Dual mixer MMIC 0.7 - 0.95 GHz 8 @ 900MHz 13 dBm 26 dBm SOT1092 BGX7220 -
1.4 - 2.7 GHz 8 @ 2GHz 13 dBm 26 dBm BGX7221 -
Function Product Frequency range BWmod (MHz) PL, 1dB (dBm) Output power (dBm) Package Type name New name
IQ modulator MMIC 0.4-4 GHz 400 12 0SOT616 BGX7100 -
0.4-4 GHz 650 12 4BGX7101 BTS8001A
For the complete product selection please see section 3.1.1, 3.1.2, 3.1.4 and 3.1.5
Product highlight:
Digital VGAs BGA7204 and BGA7210 [BTS6001A]
These 6-bit digital VGAs offer high linearity (35 dBm @ 2.2-2.8 GHz)
and high output power (23 dBm @ 2.2-2.8 GHz) across a large
bandwidth without external matching. Smart routing with no
connection crosses simplifies design and decreases footprint by 25%.
The unique power-save mode can effectively reduce the current
consumption in TDD systems by up to 45%. The BGA7210 adds
flexible current distribution across its two amplifiers, depending on
the attenuation state, to save current.
Features
`Internally matched for 50 Ω
- BGA7204 = 0.4 to 2.75 GHz
- BGA7210 = 0.7 to 3.8 GHz
`High maximum power gain
- BGA7204 = 18.5 dB
- BGA7210 = 30 dB
`Attenuation range of 31.5 dB, 0.5 dB step size (6 bit)
`Fast-switching power-save mode (power-down pin)
`Simple control interfaces (SPI)
`ESD protection on all pins (HBM 4 kV; CDM 2 kV)

16 NXP Semiconductors RF Manual 20th edition
1.3.2 Repeater
Application diagram of the components used in a repeater system
Product highlight:
MMIC dual down-mixer BGX7221
The BGX7221 combines a pair of high-performance, high-linearity
down-mixers for use in receivers that have a common local oscillator
used with, for example, main and diversity paths. The device covers
frequency bands from 1700 to 2700 MHz with an extremely flat
behavior.
Features
`8.5 dB conversion gain over all bands
`13 dBm input, 1 dB compression point
`25.5 dBm input third-order intercept point
`10 dB (typ) small-signal noise figure
`Integrated active biasing
`Single +5 V supply operation
`Power-down per mixer with hardware control pins
`Low bias current in power-down mode
`Matched 50 Ω single-ended RF and LO input impedances
`ESD protection at all pins
I-DAC
Q-DAC
PA
Tx0
LPF
LPF
LPF
LPF
RF SAW
RF SAW
PA
VGA
VGA
Tx1
Rx0
Rx1
Dual mixerHPA Dual DAC
PLL
VCO
LO Signal
Clock
Recovery
jitter
cleaner
DDC/
DUC
Filtering
mixer
mixer
ADC
ADC
Dual ADC Dual VGA Dual mixer
mixer
mixer
LNA
LNA
LNA
Function Product Frequency range NF (dB) Gain (dB) IP3O (dBm) Package Type name New name
LNA MMIC
0.3-1.5 GHz 0.43 @ 900 MHz 18.1 38.9 SOT1327 BGU8051 BTS1001L
1.5-2.5 GHz 0.54 @ 1900 MHz 18.4 35.7 SOT1327 BGU8052 BTS1001M
2-6 Ghz 0.57 @ 2500 MHz 18.4 36.0 SOT1327 BGU8053 BTS1001H
LNA+bypass MMIC
0.3-1.5 GHz 1.1 @ 900 MHz 20.5 36.5 SOT650 BGU8061 BTS3001L
1.5-2.5 GHz 1.3 @ 1500 MHz 18.5 36 SOT650 BGU8062 BTS3001M
2.7-4 GHz 1.6 @ 2500 MHz 19 34.5 SOT650 BGU8063 BTS3001H
Function Product Frequency range Conversion Gain (dB) PL, 1dB (dBm) IP3i (dBm) Package Type name New name
Dual mixer MMIC 0.7 - 0.95 GHz 8 @ 900MHz 13 dBm 26 dBm SOT1092 BGX7220 -
1.4 - 2.7 GHz 8 @ 2GHz 13 dBm 26 dBm SOT1092 BGX7221 -
Function Product Frequency range Gain (dB) IP3O (dBm) Gain range (dB) Package Type name New name
Dual IF VGA MMIC 50-250 MHz 18.5 dB 43dBm @ 172MHz 24 dB step 1dB SOT167 BGA7350 -
50-500 MHz 22 dB 46 dBm @ 172MHz 28 dB step 1dB BGA7351 -
Function Product Power (W) PL, 1dB (dBm) Gain (dB) IP3O (dBm) Package Type name New name
MPA MMIC 0.25 25.5 @ 2140 MHz 15 38.5 SOT89 BGA7024 -
0.5 28 @ 2140 MHz 11 42.5 BGA7027 -
For the complete product selection please see section 3.1.1, 3.1.2, 3.1.4 and 3.1.5
Function Product Frequency range NF (dB) Gain range (dB) IP3i (dBm) Package Type name New name
LNA + VGA MMIC
0.699-0748 GHz 0.7 @ 700 MHz 0 - 35 0 @ 700 MHz
SOT1301
BGU7060 -
0.770-0.915 GHz 0.75 @ 900 MHz 0 - 35 2 @ 900 MHz BGU7061 -
1.71-1.785 GHz 0.77 @1750 MHz 0 - 35 1 @ 1750 MHz BGU7062N2 -
1.92-1.98 GHz 0.9 @ 1950 MHz 0 - 35 0.9 @ 1950 MHz BGU7063 -
1.85-2.01 GHz 0.9 @ 1950 MHz 0 - 35 1 @ 1950 MHz BGU7073 BTS5001M
2.305-2.57 GHz 1.1 @ 2535 MHz 0 - 35 0.8 @ 2535 MHz BGU7075 BTS5001H
1.71-1.785 GHz 0.8 @ 1750 MHz 0 - 35 1.9 @ 1750 MHz BGU7078 BTS5002M

17NXP Semiconductors RF Manual 20th edition
Products
by application
1.3.3 Small cells
With the explosion of cellular data usage and the limited number of sites available for new macro base stations, operators
have to find new ways of offering high data rates and excellent quality of service. One of the options is to complement the
macro network with small cells, known as picocells (1 to 2 W average) and femtocells (0.25 to 0.5 W average). NXP offers and
develops several types of solutions to the small-cell PAs designer, optimized for performance, integration, or cost.
Small Cells
3 x 2
Att.
LO
MPA
RF1
RF2
RF-BP
IF-SAW
TX1 / RX1
Mixer+LO
RFIC
Rx (TDD)
MPA
TX2 / RX2
Rx (TDD)
1st stage Bypass LNA
RF-SAWCh1
Ch2 Rterm
SPDT 10W
With terminal isolation
>40dB
RFIC
Application diagram of a typical small-cell line-up
Product highlight:
Integrated low-noise, high-linearity
amplifier with bypass BGU806x [BTS3001x]
Building on the success of the ultra-low noise BGU805x series, the
BGU8062x is a series of SiGe:C BiCMOS LNAs with integrated bypass
and fast shutdown. The BGU806x is a perfect 3rd stage gain block
in the Rx chain in wireless infrastructure applications. The high-
performance bypass function enables high dynamic range, while the
fast shutdown function makes it well suited for TDD applications. The
BGU806x is housed in a 10-pin package that measures 3 x 3 mm.
Features
` Three versions to cover low frequency (700 – 1500 MHz), mid
frequency (1500 – 2700 MHz) and high frequency (2500 – 4000 MHz)
ranges
` Low Noise Figure ranging from 1.1 to 1.4 dB at a gain of 18.5 - 20.5 dB
` Very high linearity (1 dB compression point of ~20dBm and IIP3 of
~36 dBm) at 70-75 mA current consumption
`Performance optimized for a supply voltage of 5 V
`ESD protected on all pins
`3 x 3 x 0.85 mm package with MSL = 1
Recommended product
Function Product Frequency range NF (dB) Gain (dB) IP3O (dBm) Package Type name New name
LNA MMIC
0.3-1.5 GHz 0.43 @ 900 MHz 18.1 38.9
SOT1327
BGU8051 BTS1001L
1.5-2.5 GHz 0.54 @ 1900 MHz 18.4 35.7 BGU8052 BTS1001M
2-6 Ghz 0.57 @ 2500 MHz 18.4 36.0 BGU8053 BTS1001H
LNA+bypass MMIC
0.3-1.5 GHz 1.1 @ 900 MHz 20.5 36.5
SOT650
BGU8061 BTS3001L
1.5-2.5 GHz 1.3 @ 1500 MHz 18.5 36 BGU8062 BTS3001M
2.7-4 GHz 1.6 @ 2500 MHz 19 34.5 BGU8063 BTS3001H
For the complete product selection please see section 3.1.1

18 NXP Semiconductors RF Manual 20th edition
The increasing demand for bandwidth is very visible in broadband communication: fibers are moving closer to the home, and RF
requirements are changing, due to the increased use of digital communication protocols. NXP offers a wide range of products
which can be used in the network and in the home. For the network, we support fiber-optics with products for down- and
upstream communication. For the home, we focus on down- and upstream communication for TVs, set-top boxes and access
points-routers.
1.4 Broadband communication infrastructure and TV
1.4.1 WLAN: access points and routers, fixed consumer electronics
Application diagram for WLAN
aaa-00704
2
WLAN
RF
BB B
B
B
B
2 GHz
5 GHz
Recommended products
Function Product Gain @ 2.4GHz (dB) Gain @ 5.5 GHz (dB) NF (dB) IIP3 (dBm) Package Type name
LNA RF transistor
20 16 0.8 - 1.1 -5 - =10 SOT343F BFU730F
15 11 1 -1.2 -1 - =15 BFU768F
17 12 0.8 - 1.2 3 - +8 SOT883C BFU730LX
15 - 1 +6.5 SOT1189 BGU7224
MMIC -13.5 1.6 +8 BGU7258
For the complete product selection please see section 3.1.1 and 3.2.1
Product highlight:
WLAN LNAs with bypass BGU7224 and BGU7258
These fully integrated LNAs enable IEEE 802.11b/g/n/ac WLANs and
ISM applications in the 2.4 and 5 GHz bands. Manufactured in our
high-performance QUBiC4x SiGe:C technology, they combine best-
in-class gain, noise figure, linearity, and efficiency with the process
stability and ruggedness that SiGe technology is known for.
Features
` Fully integrated, high-performance LNA with built-in bypass
(no external matching or DC blocking required)
`Noise figure (NF) of 1.0 dB (2.4 GHz) and 1.6 dB (5 GHz), with low
current consumption of 13 mA
`Low bypass current of 2 µA
`Single-supply operation from 3.0 to 3.6 V
`Integrated, temperature-stabilized bias network
`High ESD protection of 2 kV HBM on all pins
` Ultrasmall QFN-style package (1.6 x 1.6 x 0.5 mm, 0.5 mm pitch),
MSL 1 at 260 °C

19NXP Semiconductors RF Manual 20th edition
Products
by application
1.4.2 Cable modem and set-top boxes based on DOCSIS 3.0 & 3.1
DOCSIS, the cable-modem standard from the CableLabs research consortium, supports IP traffic over digital cable-TV channels.
For the upstream path NXP offers two solutions: the BGA3131 for the new DOCSIS 3.0 standard and the requirements set by their
respective standards. The BGA3131 has a very low power consumption which eliminates the need for a costly external heatsink.
Application diagram of a DOCSIS cable modem with the BGA3031 upstream amplifier
Recommended products
Function Product Frequency range (MHz) Gain (dB) PL, 1dB (dBmV) Package Type name
Upstream VGA for DOCSIS 3.0 MMIC 5 - 85 34 74 SOT662 BGA3031
Upstream VGA for DOCSIS 3.1 MMIC 5 - 205 37 78 SOT662 BGA3131
For the complete product selection please see section 3.1.3
CoS
Anti Alias
LPF
5 – 204 MHz
LPF +Diplexer
F-conn
18.75 Ω
18.75 Ω
Vout_p
Vout_n
VctVcc
Vin_p
Vin_n
SPI
75/N
2
1:2 Balun
Product highlight:
DOCSIS 3.1 upstream amplifier BGA3131 [BTS6031]
The BGA3131 MMIC is an upstream amplifier designed for the Data
Over Cable Service Interface Specifications (DOCSIS 3.1) operating
from 5 to 205 MHz. It meets the DOCSIS 3.1 specification at a best-
in-class current consumption of 660 mA, eliminating the need for
an expensive heatsink. The device provides can amplify DOCSIS
3.0 (QAM modulated signals) and DOCSIS 3.1 (OFDM modulated
signals) up to an output level of 68 dBmV while meeting all the IMD,
harmonics, ACLR and transient requirements.
Features
`3-wire SPI control interface
`58 dB gain control range, 1 dB steps with 0.4 dB gain step accuracy
`5 MHz to 205 MHz frequency operating range
`Maximum voltage gain 37 dB, 6.5 dB noise figure
` Excellent linearity at 68 dBmV output power (IMD3 = 60 dBc,
second & third harmonic level = 60 dBc, ACLR = 64 dBc)
`5 V single supply operation
`ESD protection at all pins

20 NXP Semiconductors RF Manual 20th edition
1.4.3 Network Interface Module (NIM) for TV reception
Make a high-performance active splitter in a NIM tuner with the BGU703x/BGU704x
Today's TV tuners require complicated signal handling and benefit from flexibility in design. The front-end of a TV signal receiver
is no longer just a tuned receiver, but has evolved into an RF network interface module (NIM) with tuned demodulators, active
splitters, and remodulators. The active splitter requires an LNA with excellent linearity. NXP has two series of LNA/VGA MMICs
(BGU703x/BGU704x), designed especially for high linearity (IP3O of 29 dBm) in low-noise applications such as an active splitter
in a NIM tuner. The BGU703x family operates at a supply voltage of 5 V and is intended for use with conventional can tuners.
The BGU704x family operates at 3.3 V and works seamlessly with Si tuner ICs, which also operate at 3.3 V.
Application diagram of an STB input stage with improved NF performance using the BGU703x and BGU704x
brb403
RF input
RF SW
VGA
VGA
surge
RF output
CONVENTIONAL
TUNER OR
SILICON TUNER
Recommended products
Function Product Supply voltage (V) Gain (dB) NF (dB) Package type name
VGA MMIC
5
10 4.5 SOT363 BGU7031
10 4.5 SOT363 BGU7032
-2 2.5
10 4.5
SOT363 BGU70335 6
-2 2.5
3.3
10 4SOT363 BGU7041
10 4SOT363 BGU7042
-2 2.5
14 2.8 SOT363 BGU7044
14 2.8 SOT363 BGU7045
-2 2.5
For the complete product selection please see section 3.1.1
Product highlight:
VGAs for TVs/STBs BGU703x and BGU704x
Designed for high linearity and low noise, these 3.3 and 5 V wideband
VGAs support multi-tuner applications in TVs, DVR/PVRs, and STBs
operating between 40 MHz and 1 GHz. A unique programmable gain
with bypass mode compensates for tuner switch signal loss (important
in multi-tuner systems), and improves overall system performance by
7 to 10 dB.
Features
`Flat gain between 40 MHz and 1 GHz
` Output power at 1 dB gain compression (PL(1 dB) ) ranging
from 9 to 14 dBm
`Noise figure as low as 2.8 dB
`High linearity with an OIP3 of 29 dBm
`75 Ω input and output impedance
`Power-down during bypass mode
`ESD protection >2 kV HBM, >1.5 kV CDM on all pins

21NXP Semiconductors RF Manual 20th edition
Products
by application
Product highlight:
MMIC wideband amplifiers with internal biasing BGA302x
These are MPAs, specifically designed as the output stage for high-
linearity CATV optical mini- and midi-nodes. They operate over a
frequency range of 40 to 1200 MHz, and are housed in a lead-free
HSO8 package.
Features
`Internally biased
`Flat gain between 40 and 1200 MHz
`High linearity with an IP3o of 46 dBm and an IP2o of 75 dBm
`High gain output 1dB compression point of 30 dBm
`75 Ω input and output impedance
`Icc (total) can be controlled between 175 and 350 mA
1.4.4 Optical mini- and midi-node line-up
We provide a complete system solution for optical mini- and midi-node line-ups, for use in systems that take the broadband TV
signal from an optical network and amplify the signal onto a coaxial distribution network. Depending on the placement of the
node, this might go straight into a home (FTTH), an apartment building (FTTB), or deeper in the network (FTTC).
aaa-007197
MATCHING
CIRCUIT AGC
LNA LNA LNA MPA
TRANSFORMER TRANSFORMER
NXP delivers all the components for optical mini- and midi-node line-ups, for FTTx applications:
`BGA301x input stages are LNAs that keep overall noise low
`BGA302x MPAs deliver high output power with excellent overall performance
`The BAP70Q PIN diode enables an adjustable-gain control circuit
Application diagram of an MMIC broadband amplifier for TV and distribution systems
Recommended products
Function Product VR max (V) IF max (mA) rD (Ω)
@ IF=10 mA Package Type name
AGC PIN diode 50 100 5.4 SOT753 BAP70Q
Function Product Frequency
range (MHz)
Gain
(dB)
NF
(dB) Package Type name
LNA MMIC 40 - 1006
12 3.1
SOT89
BGA3012
15 2.5 BGA3015
18 2.2 BGA3018
Function Product Frequency
range (MHz)
Gain
(dB)
IP3
(dBm)
IP2
(dBm)
P1dB
(dBm) Package Type name
MPA MMIC 40 - 1200
16
46 75 30 SOT786-2
BGA3021
18 BGA3022
20 BGA3023
For the complete product selection please see section 3.1.2 and 3.3.2

22 NXP Semiconductors RF Manual 20th edition
Application diagram of a bidirectional line extender
Recommended products
Function Product Frequency (MHz) Gain (dB) NF(dB) Package Type name
RF forward
amplifier
Drop
amplifier 1006
12 3.1 SOT89 BGA3012
15 2.5 SOT89 BGA3015
18 2.2 SOT89 BGA3018
Function Product Frequency range (MHz) Gain (dB) P1dB (dBm) Package Type name
RF reverse
amplifier
Drop
amplifier 5 - 300
12 22.5 SOT89 BGA3012
15 23.5 SOT89 BGA3015
18 24.5 SOT89 BGA3018
For the complete product selection please see section 3.1.2
1.4.5 Broadband line extenders
Product highlight:
Extreme-broadband amplifiers BGA301x
The BGA3012, BGA3015, and BGA3018 are extreme-broadband
amplifiers that deliver 12, 15, and 18 dB of gain from 40 to 1006 MHz,
while providing outstanding linearity performance. These amplifiers
can also be used as a return path amplifier from 5 to 300 MHz, or in a
combined TV and satellite system from 40 to 2600 MHz. At the low end
of the frequency band, these amplifiers outperform competing GaAs
devices in noise figure performance by 5 dB and in input power rating
by more than 20 dB, while offering a superior ESD rating of 2 kV and
a larger supply voltage operating range of 5 to 8 V. These amplifiers
are very well suited for various broadband TV distribution system
applications, such as FFTH, home gateways,
and set-top boxes.
duplex
filter
duplex
filter
RF power
amplifier
RF reverse
am
p
lifier
coax in coax out
Larger coaxial distribution networks often require longer distances and additional amplification. Our broadband solutions are
ideally suited for use in bidirectional line extenders.

23NXP Semiconductors RF Manual 20th edition
Products
by application
1.5.1 Satellite outdoor unit, QUAD LNB with integrated mixer/oscillator/downconverter/
switch matrix
Application diagram of a QUAD LNB
Product highlight:
World’s first fully integrated Quad Ku-band to L-band
downconverter IC TFF1044HN
This universal Quad DVB-S/DVB-S2 compliant Ku-band downconverter
enables significant size reduction for Quad or Quattro LNB’s. It reduces
total costs, since it enables alignment-free production, and significantly
decreases manufacturing time, since it's fully tested.
Features
`Integrated voltage/tone detection, 4 x 4 matrix switch
`Low current consumption (Icc = 170 mA for 4 users active)
`Low Phase Noise (1.6 degrees RMS PJ typ)
`Selectable gain (30, 33, 36 dB)
`Small PCB footprint – HVLGA36 (5.0 x 5.0 x 0.72 mm) – low external
component count
aaa-017240
LNA3LNA1
LNA4LNA2
IF1
IF2
IF3
IF4
TFF1044
BPF
BPF
H
V
LNA biasing
Recommended products
Function Product Maximum gain (dB) NFmin (dB) Icc, nom (mA) Package Type name
1st stage LNA RF transistor 14.2 0.65 6SOT343F BFU910F
2nd stage LNA RF transistor
14 1.45 2
SOT343F
BFU710F
12.5 1.3 5BFU730F
14.2 0.65 6BFU910F
Function Product Gain (dB) NFmin (dB) Icc, nom (mA) Package Type name
Mixer/Oscillator/
downconverter MMIC 30/33/36 8145 HVLGA TFF1044HN
For the complete product selection please see section 3.1.5 and 3.2.1
1.5 Satellite

24 NXP Semiconductors RF Manual 20th edition
Recommended products
Function Product Package Maximum
gain (dB) NF min [dB] Icc nom [mA] Type name
1st stage LNA RF transistor SOT343F 14,2 0,65 6BFU910F
2nd and 3rd
stage LNA RF transistor SOT343F
14 1,45 2BFU710F
12,5 1,3 5 BFU730F
14,2 0,65 6BFU910F
Function Product Package Gain (dB) NF min [dB] Icc nom [mA] Type name
Mixer/
Oscillator/
downconverter RFIC SOT763
30 952 TFF1012HN
33 952 TFF1013HN
36 752 TFF1014HN
39 752 TFF1015HN
42 752 TFF1017HN
45 752 TFF1018HN
For the complete product selection please see section 3.1.5 and 3.2.1
Product highlight: Industry's lowest-power
integrated Ku-band downconverters TFF101xHN
These Universal DVB-S compliant Ku-band downconverters consume
about 50% less current (52 mA) than other integrated solutions.
They are fully integrated (PLL synthesizer/mixer/IF gain block) and RF
tested – which results in significantly decreased manufacturing time.
Stability of the local oscillator is guaranteed, which improves overall
system reliability over temperature and time, and eliminates the
need for manual alignment in production.
Features
`Ultralow current consumption (ICC = 52 mA)
`Low phase noise (1.5° RMS typ)
`Integration bandwidth from 10 kHz to 13 MHz
`Small PCB footprint
- DHVQFN16 package (2.5 x 3.5 x 0.85 mm)
- Only seven external components
- No inductors necessary
1.5.2 Satellite outdoor unit, twin LNB with integrated mixer/oscillator/downconverter
Application diagram of a twin LNB based on the TFF101x*
aaa-007198
LNA1
SPLITTERSPLITTER
COMBINERCOMBINER
H
V
LNA2
LNA3
LNA3
LNA3
shared
crystal
LNA3
BPF
TFF1014HN
SWITCHED TO
LOW-BAND
TFF1014HN
SWITCHED TO
HIGH-BAND
BPF
LNA1 LNA2
IF out 1
IF out 2
H/V
DETECT
22 kHz
TONE
DETECT
H/V
DETECT
22 kHz
TONE
DETECT
* the same products can be used for a single LNB

25NXP Semiconductors RF Manual 20th edition
Products
by application
Product highlight:
NPN wideband SiGe RF transistor BFU910F
The BGU910F is a wideband RF transistor produced in the QUBIC
GEN9 process for K-band applications (10 – 20 GHz). QUBiC GEN9 has
been optimized towards extremely low noise figures in this frequency
range. Typical applications are first, second or third stage amplifiers
in satellite LNBs. The BFU910 can be used to replace GaAs devices
giving the benefits of more robustness, single biasing and low current
consumption in combination with an excellent RF performance.
Features
`Low noise, high gain microwave transistor with 90 GHz fT
`High maximum stable gain of 14.2 dB at 12 GHz
`Minimum noise figure (NF) of 0.65 dB at 12 GHz
`Current consumption 10 mA typical
1.5.3 Satellite outdoor unit, twin LNB with discrete components
horizontal
antenna
brb02
2
H low
IF out 1
low
3rd
stage
LNA
(4 x 2)
IF
SWITCH
oscillator
vertical
antenna
2nd
stage
LNA
1st
stage
LNA
3rd
stage
LNA
2nd
stage
LNA
1st
stage
LNA
BIAS IC
IF amplifier
IF
amplifier
IF out 2
IF
amplifier
V low
IF amplifier
H high
high oscillator
IF amplifier
V high
IF amplifier
BIAS IC
mixer
mixer
mixer
mixer
Recommended products
Function Product Gmax
[dB]
NF min
[dB]
Icc nom
[mA] Package Type
1st stage LNA RF
transistor 14.2 0.65 6SOT343F BFU910F
2nd stage
LNA
RF
transistor
14 1.45 2
SOT343F
BFU710F
12.5 1.3 5 BFU730F
14.2 0.65 6BFU910F
Function Product Gmax
[dB]
NF min
[dB]
Icc nom
[mA] Package Type
Oscillator RF
transistor
12.5 1.2 30
SOT343F
BFU660F
14 1.45 2BFU710F
12.5 1.3 5 BFU730F
Function Product Gmax
[dB]
NF min
[dB]
Icc nom
[mA] Package Type
Mixer RF
transistor
14 1.45 2SOT343F BFU710F
12.5 1.3 5 BFU730F
Function Product VR max
(V) Cd [pF] Rd [Ω]
@10 mA Package Type
IF switch PIN diode
175 0.23 @ 20 V 2 Various BAP64*
50 0.2 @ 20 V 1,5 Various BAP51*
50 0.2 @ 5 V 3 Various BAP50*
Function Product Gain
[dB]
P1dB
[dBm]
Vcc/Icc [V/
mA] Package Type
1st or output
stage IF
amplifier
IF gain
block
20 -1 3.3 / 10.5
SOT363
BGA2800
22.4 2 3.3 / 14.3 BGA2801
26 1 3.3 / 12.5 BGA2802
23 -6 3.0 / 5.8 BGA2803
25 5 3.3 / 18.2 BGA2815
31.3 5 3.3 / 22.2 BGA2816
24.3 6 3.3 / 20 BGA2817
29.8 6 3.3 / 19.9 BGA2818
24 -1 5 / 9.1 BGA2850
24.8 -3.5 5 / 7 BGA2851
32.2 8 5 / 26.4 BGA2865
23.9 4 5 / 17.4 BGA2866
27.1 7 5 / 21.7 BGA2867
31.7 10 5 / 24 BGA2869
RF transistor
12.5 5.5 / 30 SOT343F BFU660F
* Also available in ultrasmall leadless package SOD882D
For the complete product selection please see section 3.1.2, 3.2.1 and 3.3.2
Application diagram of a twin LNB with discrete components*
* the same products can be used for a single LNB

26 NXP Semiconductors RF Manual 20th edition
1.5.4 Satellite multi-switch box - 4 x 4 (up to 16 x 16)/DiSEqC/SMATV
brb023
output
amplifiers
input
amplifiers
LNB
input
amplifier
terrestrial
IF input fr
om satellite LNBs
terrestrial
input
coax out to STB
coax out to STB
coax out to STB
coax out to STB
SWITCH MATRIX
FOR 4 × 4,
NEEDS 16
(SINGLE) PIN
DIODES
Recommended products
Function Product
Frequency
range
(MHz)
Gain
(dB) NF(dB) Package Type
Input
amplifier
terrestrial
MMIC
400-2700
22 2.9 SOT89 BGA7024
23 4.6 SOT908 BGA7124
12 3.1
SOT89
BGA3012
40-1006 15 2.5 BGA3015
18 2.2 BGA3018
Function Product Gain [dB] P1dB
(dBm)
Vcc/Icc (V/
mA) Package Type
IF input
amplifie MMIC
23.9 4 5 / 17.4
SOT363
BGA2866
27.1 7 5 / 21.7 BGA2867
29.8 6 3.3 / 19.9 BGA2818
Function Product Gmax
[dB]
NF min
[dB]
Icc nom
[mA] Package Type
IF input
amplifie
RF
transistor
26 0.8 3
SOT343F
BFU630F
24 0.65 30 BFU660F
27 0.43 25
BFU725F/N1
28 0.5 5BFU730F
Product highlight:
NPN wideband SiGe RF transistor BFU730F
The BGU730F is part of the family of 6th (Si) and 7th (SiGe:C)
generation RF transistors and can be used to perform nearly any RF
function. These next-generation wideband transistors offer the best
RF noise figure versus gain performance, drawing the lowest current.
This performance allows for better signal reception at low power and
enables RF receivers to operate more robustly in noisy environments.
Features
`Operates at 2.3 GHz
`High maximum power gain (Gp) of 17.6 dB
`Noise figure (NF) of 0.8 dB
`Input 1dB gain compression (Pi(1dB) ) of -15 dBm
`Input third-order intercept point IP3I of +4.7 dBm
Application diagram of a satellite multi-switch box
Function Product Vr_max [V] Cd [pF] Rd
[Ohm] Package Type
Switch
matrix
PIN
diode
50 0.2 3
Various
BAP50*
50 0.2 1.5 BAP51*
175 0.23 0.7 BAP64*
50 0.25 1.4 BAP70*
60 0.25 0.85 BAP1321*
Function Product Gmax
[dB]
NF min
[dB]
Icc nom
[mA] Package Type
Switch
matrix
RF
transistor
27 0,43 25 SOT343F BFU725F/N1
28 0,5 5 BFU730F
Function Product Gain [dB] P1dB
(dBm)
Vcc/Icc
(V/mA) Package Type
Output
amplifier MMIC
22 25.5 5/110 SOT89 BGA7024
23 25 5/140 SOT908 BGA7124
31.7 10 5 / 24
SOT363
BGA2869
12 23 8/110 BGA3012
15 24 8/110 BGA3015
18 25 8/120 BGA3018
Function Product Gmax
[dB]
NF min
[dB]
Icc nom
[mA] Package Type
Output
amplifier
RF
transistor
26 0.8 3
SOT343F
BFU630F
24 0.65 30 BFU660F
27 0.43 25 BFU725F/N1
28 0.5 5BFU730F
* Also available in ultrasmall leadless package SOD882D
For the complete product selection please see section 3.1.2, 3.1.4, 3.2.1
and 3.3.2

27NXP Semiconductors RF Manual 20th edition
Products
by application
1.5.5 VSAT with integrated mixer/oscillator/downconverter
Application diagram of a VSAT using a flexible TFF1024HN downconverter
Product highlight:
Downcoverter with PLL/VCO for VSAT TFF1024HN
This VSAT Ku-band downconverter consumes about 35% less current (60
mA) than other integrated solutions. It's fully integrated (PLL synthesizer/
mixer/IF gain block) and RF tested – which results in significantly
decreased manufacturing time. Unlike dielectric resonance oscillators,
which are mechanical components, the PLL-based TFF1024HN
guarantees stable performance over lifetime and temperature, enabling
high Service (QoS) for end-users. This downconverter operates at eight
of the most-used Ku sub-bands using only one crystal.
Features
`Switched LO frequency
- Eight selectable frequencies from 9.75 to 11.30 GHz
- More LO frequencies obtainable with different Xtal values
`Ultralow current consumption (ICC = 60 mA)
`Low phase noise (1.0° RMS typ)
- 10 kHz to 13 MHz integration bandwidth
`Flat gain over frequency (< 2 dBpp)
`High linearity of > 16 dBm IP3o
`High P1dBo > 6 dBm
brb405
INDOOR UNITOUTDOOR UNIT
REF
ANTENNA
to/from
IDU
LNA
IF IF1
BUF
BUF
MPX MPX
OMT
MOD
DEMOD
DATA
INTERFACE
POWER
SUPPLY
DIGITAL
SIGNAL
PROCESSOR
LNA2
PA
LNA1
IF1
SYNTH PLL
PLL
HB 0 HB 1HB 2
TFF1024HN
TFF100xHN
REF
Function Product Gain (dB) PL, 1dB (dBm) Vcc/Icc (V/mA) Package Type name
IF amplifier MMIC
20 -1 3.3 / 10.5
SOT363
BGA2800
22.4 2 3.3 / 14.3 BGA2801
26 1 3.3 / 12.5 BGA2802
23 -6 3.0 / 5.8 BGA2803
25 5 3.3 / 18.2 BGA2815
31.3 5 3.3 / 22.2 BGA2816
24.3 6 3.3 / 20 BGA2817
29,8 6 3.3 / 19.9 BGA2818
24 -1 5 / 9.1 BGA2850
24.8 -3.5 5 / 7 BGA2851
32.2 8 5 / 26.4 BGA2865
23.9 4 5 / 17.4 BGA2866
27.1 7 5 / 21.7 BGA2867
10 5 / 24 BGA2869
Function Product Gmax [dB] NF min [dB] Icc nom [mA] Package Type
Mixer/oscillator/
downstreamconverter MMIC 9.75, 10, 10.25, 10.55,
10.6, 10.75, 11.25, 11.3 34.3 56 SOT763 TFF1024HN
For the complete product selection please see section 3.1.2 and 3.1.5 and 3.2.1
Recommended products

28 NXP Semiconductors RF Manual 20th edition
Function Product Maximum gain (dB) NFmin (dB) Icc, nom (mA) Package Type name
1st stage LNA RF transistor 14.2 0.65 6SOT343F BFU910F
2nd stage LNA RF transistor
14 1.45 2
SOT343F
BFU710F
12.5 1.3 5 BFU730F
14.2 0.65 6BFU910F
Function Product Maximum gain (dB) NFmin (dB) Icc, nom (mA) Package Type name
Oscillator / Buffer transistor
17 1.7 2
SOT343F
BFU610F
16 1.3 3BFU630F
12.5 1.2 30 BFU660F
17 0.7 70 BFU690F
14 1.45 2BFU710F
12.5 1.3 5 BFU730F
13.5 0.75 25 BFU760F
16.5 0.5 50 BFU790F
For the complete product selection please see section 3.1.2 and 3.1.5 and 3.2.1
Function Product LO frequency (GHz)
RMS Phase Jitter [degr]
Icc (mA) Package Type name
PLL MMIC
12.8 - 13.05 0.65 100
SOT616
TFF1003HN
14.62 - 15.00 0.9 116 TFF1007HN
9.03 - 9.22 0.7 100 TFF11092HN
9.53 - 9.72 0.7 100 TFF11096HN
9.92 - 10.13 0.7 100 TFF11101HN
13.8 - 14.1 1 100 TFF11139HN
14.5 - 14.8 1100 TFF11145HN

29NXP Semiconductors RF Manual 20th edition
Products
by application
In a typical RF front-end, RF signals are received and transmitted anywhere in the range of DC to 20 GHz. All our wideband SiGe
amplifiers can be used for high-speed, low-noise applications along this entire spectrum. Because our wideband transistors
are so versatile, they are used in a broad range of functions and are an especially good choice for cost-sensitive applications
that also need flexibility. In LNA applications, they support GPS, satellite radio, cordless phones, and WLAN. They also enable
oscillators and drivers in consumer, ISM, and automotive applications. Many designers use varicap diodes principally as voltage-
variable capacitors, with the diode function a secondary option, but these devices are ideally suited for
use as VCOs in ISM-band applications.
Recommended products
Function Product VR max (V) IF max (mA) rD (Ω) @ IF=10 mA Package Type name
SPDT
switch
Bandswitch
diode
35 100 0.5 SOD523 BA891
35 100 0.5 SOD323 BA591
RF diode 50 - 60 50 - 100 2.5 Various BAP51*
100-175 100 2Various BAP64*
Function Product Freq range(GHz) NF (dB) Gain (dB) Package Type name
LNA
transistor
< 2 0.7 @ 433 MHz 19.5 @ 433 MHz SOT23 BFU520A
< 2 0.8 @ 433 MHz 21 @ 433 MHz BFU530A
< 2 0.8 @ 433 MHz 21 @ 433 MHz SOT143 BFU520
< 2 0.9 @ 433 MHz 23 @ 433 MHz BFU530
< 2 0.8 @ 433 MHz 21 @ 433 MHz SOT143X BFU520X
< 2 0.9 @ 433 MHz 23 @ 433 MHz BFU530X
< 2 0.8 @ 433 MHz 21 @ 433 MHz SOT143XR BFU520XR
< 2 0.9 @ 433 MHz 23 @ 433 MHz BFU530XR
< 2 0.7 @ 433 MHz 20 @ 433 MHz SOT323 BFU520W
< 2 0.8 @ 433 MHz 21.5 @ 433 MHz BFU530W
< 2 0.7 @ 433 MHz 20 @ 433 MHz SOT363 BFU520Y
< 10 1.1 @ 2.4 GHz 16 @ 2.4 GHz
SOT343F
BFU610F
< 10 0.85 @ 2.4GHz 19 @ 2.4 GHz BFU630F
< 6 0.7 @ 2.4 GHz 16 @ 2.4 GHz BFU660F
< 6 0.7 @ 2.4 GHz 11 @ 2.4 GHz BFU690F
< 18 1.45 @ 12 GHz 11.5 @ 12 GHz BFU710F
< 18 1.3 @ 12 GHz 10.5 @ 12 GHz BFU730F
< 10 0.75 @ 5.8 GHz 10.5 @ 5.8 GHz BFU760F
< 6 0.5 @ 2.4 GHz 10.5 @ 2.4 GHz BFU790F
MMIC
< 4 0.9 @ 1.5 GHz 8 - 21 @ 1.5 GHz
SOT1209
BGU6101
< 4 0.9 @ 1.5 GHz 11 - 21 @ 1.5 GHz BGU6102
< 4 0.9 @ 1.5 GHz 13 - 19 @ 1.5 GHz BGU6104
Product highlight:
NPN wideband SiGe RF transistor BFU730F
The BGU730F is part of the family of 6th (Si) and 7th (SiGe:C)
generation RF transistors and can be used to perform nearly any
RF function. These wideband transistors offer the best RF noise
figure versus gain performance, drawing the lowest current. This
performance allows for better signal reception at low power and
enables RF receivers to operate more robustly in noisy environments.
Features
`Operates at 2.3 GHz
`High maximum power gain (Gp) of 17.6 dB
`Noise figure (NF) of 0.8 dB
`Input 1 dB gain compression (Pi(1dB) ) of -15 dBm
`Input third-order intercept point IP3I of +4.7 dBm
Application diagram of a typical RF front-end interface
* Also available in ultrasmall leadless package SOD882D
bra850
APPLICATION
CHIP SET
SPDT
switch VCO
mixerfilterLNAfilterantenna
buffer
VCOdriverPAfilter
1.6 Generic RF front-end for IOT

30 NXP Semiconductors RF Manual 20th edition
Function Product Freq range (GHz) PL1dB (dBm) IP3o (dBm) Package Type name
Driver transistor
< 2 9.5 19 SOT23 BFU530A
< 2 13 23 BFU550A
< 2 9 19 SOT143 BFU530
< 2 13.5 23 BFU550
< 2 9.5 19 SOT143X BFU530X
< 2 13 22.5 BFU550X
< 2 9.5 19 SOT143XR BFU530XR
< 2 13 23 BFU550XR
< 2 9.5 19 SOT323 BFU530W
< 2 13 23 BFU550W
MMIC DC - 2.2 4 17 SOT363 BGA2866
Function Product Freq range (GHz) PL1dB (dBm) IP3o (dBm) Package Type name
MPA
transistor
< 2 16 25.5 SOT89 BFU580Q
< 2 23 32.5 BFU590Q
< 2 15.5 25 SOT223 BFU580G
< 2 22.5 32 BFU590G
MMIC
< 2.7 25.5 38 SOT89 BGA7024
< 2.7 29 43 BGA7027
< 2.7 30 42
SOT908
BGA6130
< 2.7 25 38.5 BGA7124
< 2.7 28.5 42.5 BGA7127
< 2.7 30.5 42.5 BGA7130
Function Product Rs, max (Ω) Cd1 (pf) Cd2 (pF) Package Type name
VCO Varicap diodes 3 16 @ 1 V 4.8 @ 7.5 V SOD523 BB181
0,7 12.5 @ 0.5 V 0.9 @ 28 V SOD323 BB156
Function Product fT (GHz) Gmax (dB) Icc max (mA) Package Type name
VCO RF bipolar
transistor
10 23 30 SOT23 BFU520A
11 23 40 BFU530A
10 23 30 SOT323 BFU520W
11 24 40 BFU530W
11 20 30 SOT143 BFU520
11 21 40 BFU530
11 20 30 SOT143X BFU520X
11 21 40 BFU530X
11 20 30 SOT143XR BFU520XR
11 21 40 BFU530XR
For the complete product selection please see section 3.1.1 and 3.1.4, 3.2.1, 3.3.1, 3.3.2 and 3.3.3
Product highlight:
PNP wideband Si RF transistor BFU520x
Supporting broadband amplifiers up to 2 GHz, LNAs for ISM
applications, and ISM-band oscillators, the BFU520X delivers high
speed and low noise in a plastic, 4 inch, dual-emitter SOT143B
package.
Features
`Low-noise, high-breakdown RF transistor
`AEC-Q101 qualified
`Minimum noise figure (NFmin) = 0.7 dB at 900 MHz
`Maximum stable gain of 20 dB at 900 MHz
`11 GHz fT silicon technology
Recommended products

31NXP Semiconductors RF Manual 20th edition
Products
by application
1.7 Automotive
NXP is very active in the automotive market and is present in nearly every automotive application that uses RF. The examples
in this section provide evidence that our portfolio covers all the key RF functions typically used in cars.
We recently expanded our portfolio by adding the BFU5x0 series, a new generation of best-in-class, AEC-Q101 qualified
wideband transistors. Each BFU5x0 device has a different drain current and is available in up to six different packages, ranging
from very small to ultrasmall. Overall, the series delivers ultra-low noise, very high breakdown voltage, and a maximum stable
gain of 18 dB at 900 MHz.
1.7.1 Remote Keyless Entry (RKE), RF generic front-end with dedicated antenna for reception
and transmission
With an RKE system, drivers can lock or unlock a vehicle by using a key fob equipped with a transmitter that sends data to
a receiver in the vehicle. In the Tx chain, the driver and PA play major roles in ensuring a long range and accurate transmission.
In the Rx chain, a discrete LNA is often used to ensure efficiency and security. We offer a wide selection of VCOs, drivers,
and PAs that let the designer build the right configuration for their application.
Application diagram of a remote keyless entry system
bra851
LOW
FREQUENCY
CHIP SET
r
eceiver transmitter
filterLNAfilter
antenna antenna
LOW
FREQUENCY
CHIP SET
driverPAfilter
Function Product Freq range (GHz) NF (dB) Gain (dB) Package Type name
LNA
transistor < 2 0.7 @ 433 MHz 20 @ 433 MHz SOT323 BFU520W
< 2 0.8 @ 433 MHz 21.5 @ 433 MHz BFU530W
MMIC
< 4 0.9 @ 1.5 GHz 8 - 21 @ 1.5 GHz
SOT1209
BGU6101
< 4 0.9 @ 1.5 GHz 11 - 21 @ 1.5 GHz BGU6102
< 4 0.9 @ 1.5 GHz 13 - 19 @ 1.5 GHz BGU6104
< 6 0.6 @ 1 GHz 20 @ 1 GHz SOT886 BGU7003W
Function Product Freq range (GHz) PL1dB (dBm) IP3o (dBm) Package Type name
Driver MMIC DC - 2.2 4 17 SOT363 BGA2866
Function Product Freq range (GHz) PL1dB (dBm) IP3o (dBm) Package Type name
MPA MMIC
< 2.7 30 42
SOT908
BGA6130
< 2.7 25 38.5 BGA7124
< 2.7 28.5 42.5 BGA7127
< 2.7 30.5 42.5 BGA7130
For the complete product selection please see section 3.1.1 and 3.1.4 and 3.2.1
Recommended products
Product highlight:
MMIC wideband amplifier BGU6101
The BGU6101 is an unmatched MMIC featuring an integrated bias-
enable function and a wide supply voltage. It is part of a family of
three products (BGU6101, BGU6102, BGU6104), and is optimized for
2 mA operation.
Features
`Applicable between 40 MHz and 6 GHz
`13 dB gain and 0.8 dB NF at 450 MHz
`50 Ω FM LNA: 15 dB gain and 1.4 dB NF at 100 MHz
`Integrated, temperature-stabilized bias for easy design
`Bias current configurable with external resistor
`Power-down mode current consumption < 1 μA
`ESD protection > 1 kV HBM on all pins

32 NXP Semiconductors RF Manual 20th edition
1.7.2 Tire-pressure monitoring system
Tire-pressure monitoring systems use a transmitter similar to that of an RKE system (see section 1.6.2). Range and accuracy are
a must, so discrete drivers and/or PAs are mandatory. NXP offers a wide selection of VCOs, drivers, and PAs that support these
requirements.
Recommended products
Function Product Freq range (GHz) PL1dB (dBm) Icc max (mA) Package Type name
MPA transistor < 2 7 30 SOT323 BFU520W
< 2 10 40 BFU530W
For the complete product selection please see section 3.2.1
PA
filter
antenna
SENSOR
brb216
Application diagram of a tire-pressure monitoring system
Product highlight:
NPN wideband silicon RF transistors BFU5xx
The BFU5xx transistor family is designed for applications up to 2 GHz
such as communication, and automotive and industrial equipment.
Due to the high gain at low supply current, these devices are also
a good choice for battery-powered systems. All are available in
multiple, small form-factor packages that ease design-in.
Features
`Low-noise, high-breakdown RF transistor
`AEC-Q101 qualified
`Minimum noise figure (NFmin) = 0.7 dB at 900 MHz
`Maximum stable gain of 18 dB at 900 MHz
`11 GHz fT silicon technology

33NXP Semiconductors RF Manual 20th edition
Products
by application
1.7.3 SDARS and HD radio
In a Satellite Digital Audio Radio Service (SDARS) system equipped with an active-antenna LNA, a BFU730F wideband transistor
can drive the first stage in a three-stage SIRIUS LNA chain, while the BFU690F can drive the second and third stages.
Application diagram of an SDARS Active Antenna LNA - 2320-2332.5 (SIRIUS, 3 stages)
001aan958
1st
stage
LNA
antenna
2nd
stage
LNA
3rd
stage
LNAfilter
Chipset
Recommended products
Function Product Freq range (GHz) NF (dB) Gain (dB) Package Type name
1st stage LNA transistor < 18 1.3 @ 12 GHz 10.5 @ 12 GHz SOT343F BFU730F
Function Product Freq range (GHz) NF (dB) Gain (dB) Package Type name
2nd stage LNA
transistor < 6 0.7 @ 2.4 GHz 11 @ 2.4 GHz SOT343F BFU690F
MMIC
DC - 2.2 3.2 @ 2.15 GHz 32 @ 2.15 GHz
SOT363
BGA2869
DC - 2.2 3 @ 2.15 GHz 25 @ 2.15 GHz BGA2851
DC - 2.2 3.4 @ 2.15 GHz 23 @ 2.15 GHz BGA2803
Function Product Freq range (GHz) NF (dB) Gain (dB) Package Type name
3rd stage LNA transistor < 6 0.7 @ 2.4 GHz 11 @ 2.4 GHz SOT343F BFU690F
< 6 0.5 @ 2.4 GHz 10.5 @ 2.4 GHz BFU790F
For the complete product selection please see section 3.1.1 and 3.2.1
Product highlight:
IF gain blocks BGA28xx
These MMIC wideband amplifiers are equipped with internal matching
circuitry and are housed in a 6-pin SOT363 plastic
SMD package.
Features
`No output inductor necessary when used at the output stage
`Internally matched to 50 Ω
`Reverse isolation > 30 dB up to 2 GHz
`Good linearity with low second- and third-order products
`Unconditionally stable (K > 1)

34 NXP Semiconductors RF Manual 20th edition
INSPIRING RF
SOLUTIONS
Our broad portfolio and collaborative approach help
you advance your RF designs for a smarter world.

35NXP Semiconductors RF Manual 20th edition
Technologies
2. Technologies
2.1 Looking for a leader in SiGe:C? You just found us!
Excellent RF signal quality and more functionality in
one design
Silicon-germanium (SiGe) process technology-based QUBIC offers
high RF performance at a competitive cost, while ensuring excellence
in signal quality via robust, highly integrated functionalities and
value-added solutions. This in-house process builds on mature
processes that have been in mass production since 2002. The QUBIC
process can integrate more functionality onto devices at a smaller
footprint and with greater reliability and manufacturing efficiency,
offering a clear competitive advantage to our customers.
More than an alternative
QUBIC delivers several benefits. It achieves RF performance
comparable to GaAs for linearity, noise figure, and phase noise.
It also provides higher robustness and reliable design (active
ESD protection), and offers the option to integrate dense analog
circuitry and digital control on the same mixed-signal IC. SiGe also
offers lower DC power consumption. It allows wireless equipment
manufacturers to add more functionality onto devices with less
space, at a competitive cost, and with greater reliability and
manufacturing efficiency. With QUBIC, customers can speed their
migration from GaAs technology to silicon by enabling cutting-edge,
low-noise performance and IP availability. QUBiC comes in five
variants (Gen6 through Gen10), each with its own optimization for
specific application areas.
QUBIC Gen6
The QUBIC Gen6 process features 0.25 μm CMOS with five metal
layers for integration of dense digital logic-based smart functionality,
and a rich set of active and passive devices for high-frequency
mixed-signal designs, including thick top metal layers for high-quality
inductors. The device set includes 35 GHz fT implanted base Si
double poly NPNs with 3.8 V breakdown voltage (BVCEO) and low noise
figure (NF < 1.1 dB @ 2 GHz), 5 GHz fT VPNPs, a 28 GHz high-voltage
NPN with 5.9 V breakdown voltage, differential and single-ended
varicaps with Q-factor > 30, scalable inductors with Q-factor > 20,
800 MHz fT lateral PNPs, 137, 220, and 12 to 2000 Ω/sq. poly and
active resistors, a 270 Ω/sq. SiCr thin film resistor, a 5.7 fF/μm2 oxide
capacitor and a 5 fF/μm2 MIM capacitor, one to six fF/μm2 oxide
capacitors, and various other devices, including isolated NMOS,
and optional 3.3 V CMOS and RF-CMOS transistors. The QUBIC
Gen6 process is ideal for applications up to 5 GHz.
QUBIC Gen7RF (QUBIC Gen7)
The QUBIC Gen7 process is a SiGe:C-based extension of the QUBIC
process for high-frequency mixed-signal designs and offers a rich
set of transistor devices, including a 110 GHz fT NPN with 2.0 V
breakdown voltage (BVCEO) and very low noise figure (NF < 1.0 dB
@ 10 GHz), a 60 GHz fT NPN with 3.1 V BVCEO, 0.25 μm CMOS, a
variety of resistors, a 5.7 fF/μm2 oxide capacitor, and a 5 fF/μm2
MIM capacitor. QUBIC Gen7 is ideal for applications that typically
operate at up to 30 GHz, such as wireless infrastructure, satellite
communications, and point-to-point or wireless connectivity.
QUBIC Gen8RF (QUBIC Gen8)
The QUBIC GEN8 process further enhances the QUBIC Gen7 process.
It offers 200 GHz fT / 1.5 V BVCEO NPNs and offers ultra-low noise
figure (NF < 0.6 dB @ 10 GHz), 90 GHz fT / 2.5 V BVCEO NPN, 0.25 μm
CMOS, several resistors, a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2
MIM capacitor. QUBIC Gen8 is ideal for applications operating at
high frequencies (> 20 GHz), such as wireless infrastructure point-to-
point, car radar, and aerospace, but also offers extremely low noise
in the 1 - 2 GHz range. A recent process update provides high-power
devices for use in applications that require high output power and high
linearity. This Extended High Voltage device combines high breakdown
capabilities with high speed. The BVCEO is increased to 4 V and the
BV_CBO equals 18 V. The fT / fmax of this optional device is 50 / 160 GHz.
QUBIC Gen9RF
The latest release of the QUBIC family provides best-in-class noise
figures at millimeter wave frequencies. The latest generation is
optimized for NFmin, which is measured at 0.27 dB at 2 GHz, 0.35 dB
at 5 GHz, and 0.49 dB at 10 GHz.
NXP's QUBIC BiCMOS SiGe:C technology enables future generations of RF products – including
low-noise amplifiers, medium-power amplifiers, and local oscillator (LO) generators – to operate at
higher performance levels, including higher frequency and higher integration. Use cases include
increasing the performance of base stations, mobile phones, and other mobile platforms, along
with equipment for communications infrastructure. The QUBIC process also helps speed satellite
tracking and better connectivity with GPS signals for GPS systems, enhances satellite, WLAN, and
microwave radio applications, strengthens performance in radar, and more.

36 NXP Semiconductors RF Manual 20th edition
2.2 High-performance, small-size packaging
RF small-signal packaging is driven by two major trends which partly overlap
`Lower parasitics for better RF performance
`Smaller form factors for portable applications
To cope with these trends, NXP uses several approaches
`For non-space-restricted applications, the use of flat-pack packages instead of gull-wing versions reduces the parasitic
impedance because of shorter lead length (e.g. SOT343F instead of SOT343). This results in better RF performance in
the Ku and Ka bands (13 to 20 GHz).
`For space-restricted applications, there are two ways to reduce the form factor and parasitics:
- Leadless package platform
- Wafer-Level Chip-Scale Package (WL-CSP) technology
The leadless package platform (>25 variants already released)
is highly flexible with respect to package size, package height,
and I/O pitch. For example, the 6-pin packages range in size
from 1.45 x 1 x 0.5 mm with 0.5 mm pitch to 0.8 x 0.8 x 0.35 mm
with 0.3 mm pitch.
Because of the compact size of the design, wire lengths and
parasitic impedance are also restricted. The absence of leads
further reduces the inductance.
Wafer-Level Chip-Scale Package technology is ideal for RF
functions where the I/O pitch fits within the chip area. With
smaller designs (and thus little effective chip area), it is more
difficult to apply these on board due to smaller I/O pitches.
Such small functions can now be flipped inside the SOT1232
package and still be mounted like a normal leadless package
with 0.4 mm pitch. The absence of wires gives the lowest
parasitic inductance available.
SOT886 SOT891
SOT1208
0.65 x 0.44 x 0.29 mm (including 0.09 mm balls)
5 I/Os @ 0.22 mm pitch
SOT343 SOT1230SOT343F SOT1232
NXP's high-performance, small-size packaging, enabled by NXP's leadless package platform and
WL-CSP technology

37NXP Semiconductors RF Manual 20th edition
Technologies

38 NXP Semiconductors RF Manual 20th edition
ENHANCING RF
PERFORMANCE
NXP has a proven record in delivering the best RF performance.
That's why half of all satellite solutions use NXP components.
RF for a smarter world.

39NXP Semiconductors RF Manual 20th edition
Products by function
3. Products by function
3.1 RF ICs
Why choose NXP's RF MMIC amplifiers and mixers:
`Reduced RF component count
`Easy circuit design-in
`Reduced board size
`Short time-to-market
`Broad portfolio
`Volume delivery
`Short lead time
3.1.1 Low noise amplifiers
GPS LNAs for mobile, wearables and automotive
Type name New name Package
Vcc (V) Icc (mA) Gain (dB) NF (dB) PL, 1dB (dBm) IP3i (dBm)
min max typ typ typ Vcc = 1.8 V,
typ
Vcc = 2.85 V,
typ
Vcc = 1.8 V,
typ
Vcc = 2.85 V,
typ
BGU6005 GPS1001M SOT1230 1.5 3.1 5,7 17. 5 0.85# -9 -6 3 6
BGU6009 GPS1002M SOT1230 1.5 3.1 5,5 17. 5 0.95# -7 -4 5 7
BGU7004^ GPS1103M SOT886 1.5 2.85 4.5 16.5 / 17.5* 0.9 -11 -8 912
BGU7005 GPS1101M SOT886 1.5 2.85 4.5 16.5 / 17.5* 0.9 -11 -8 912
BGU7007 GPS1102M SOT886 1.5 2.85 4.8 18.5 / 19.5* 0.9 -12 -11 4 5
BGU7008^ GPS1104M SOT886 1.5 2.85 4.8 18.5 / 19.5* 0.9 -12 -11 4 5
BGU8004 -WP-CSP 1.5 3.1 3.4 17 / 18* 0.6# -10 -8 4 6
BGU8006 -WL-CSP 1.5 3.1 4.1 17.5 / 19.0 0.6# -10 -8 5 8
BGU8007 -SOT886 1.5 2.2 4.6 19.0 / 20.5* 0.75# -11 -4-
BGU8009 GPS1201M SOT1230 1.5 3.1 4.4 17.6 / 20* 0.65 -10 -7 3 6
BGU8010 -SOT1230 1.5 3.1 3.0 16.1 / 17* 0.70# -12 -9 0 3
BGU8011 -SOT1230 1.5 3.1 4.4 16.3 / 17.5* 0.65# -8 -6 6 7
BGU8019 GPS1202M SOT1232 1.5 3.1 4.4 18.5 / 20* 0.55# -10 -7 2 6
BGU8103% GPS1301M SOT1232 1.5 3.1 1,2 17.6 / 19.1* 0.8# -16 -13 -8 -7
BGU8309 GPS1301M SOT1226-2 1.5 3.1 3.6 17/17 0.7# -9 -9 5 5
^ AEC-Q101 qualified * with/without jammer # excluding board losses % also available in WL-CSP package with slightly deviating specification, detailed information available on request
General purpose LNAs
Type name Package VCC
(V)
Icc
(mA)
Gain (dB) PL, 1dB (dBm) NFmin (dB) IP3o (dBm) ESD
protection
HBM (kV)
450
MHz
900
MHz
1800
MHz
2400
MHz
5800
MHz
450
MHz
900
MHz
2400
MHz
450
MHz
900
MHz
1800
MHz
2400
MHz
5800
MHz
450
MHz
900
MHz
1800
MHz
2400
MHz
5800
MHz
BGA2012 SOT363 37.0 16.0 1.7 10.0 -
BGU7003 SOT891 2.5 5.0 20.0 15.2 11.4 0.6 0.8 1.5 1
BGU7003W SOT886 2.5 5.0 20.0 15.2 11.4 0.6 0.8 1.5 1
BGU6101 SOT1209 31.5 13.0 12.0 13.0 (1) -11.0 -11.5 -6.5 (1) 0.8 0.8 1.3 (1) -2.5 -2.0 6.5 (1) 3
BGU6102 SOT1209 3 3.0 18.5 16.5 14.0 (2) -5.0 -5.5 0 (2) 0.7 0.8 1.2 (2) 5.5 6.0 11.5 (2) 3
BGU6104 SOT1209 3 6.0 22.5 18.5 12.8 (3) 0.5 0.5 6.5 (3) 0.8 0.8 1.1 (3) 11.0 12.0 18.5 (3) 3
(1) Icc = 3 mA (2) Icc = 6 mA (3) Icc = 12 mA

40 NXP Semiconductors RF Manual 20th edition
Type name New name Package Vcc (V) Icc, gain (mA) Icc, bypass
(µA)
Frequency
(MHz) Gain (dB) Gainbypass
(dB) NF (dB) IP3i (dBm) PL, 1dB
(dBm) ton (μs) toff (μs)
typ typ typ typ typ typ typ typ max max
BGU8L1% LTE1001L SOT1232 2.8 4.6 -
740 14.5 -0.7 1-5
3 1
882 14.5 -0.7 2-3
943 14.0 -0.8 2-3
BGU8M1% LTE1001M SOT1232 2.8 5.0 -
1843 13.5 -0.8 4-2
1960 13.5 -0.8 5-2
2140 13.0 -0.9 6-2
BGU8H1% LTE1001H SOT1232 2.8 5.0 -2350 13.0 -0.9 8-1
2655 12.5 -1.0 8 0
BGS8L2% LTE3001L SOT1232 2.8 4.9 < 1
740 13,5 -1.6 0.84 1-2
4 1882 13 -1.9 0.84 1.5 -1
943 12,5 -2 0.84 1.5 -0.5
BGS8M2% LTE3001M SOT1232 2.8 5.4 < 1
1843 14.3 -2,3 0,8 2.5 -3.3
4 11960 14.4 -2,1 0,8 3.5 -3.5
2140 13.7 -2,3 0,8 5 -2.5
BGS8H2% LTE3001H SOT1232 2.8 5.4 < 1 2350 13 -2,3 1 4 -1.5
2655 11.2 -2,6 1 4 0
BGS8L5% LTE3301L SOT1232 2.8 4.5 < 1
740 15.0 -1.5 0.7 1.0 -6.0
4 1882 13.5 -2.0 0.7 1.0 -5.0
943 13.0 -2.5 0.7 1.0 -6.0
BGS8H5% LTE3301H SOT1232 2.8 4.5 < 1
1500 14.5 -2.5 0.7 -3.0 -8.5
4 1
2140 13.0 -2.5 0.8 0.5 -6.0
2350 12.5 -2.5 0.8 1.0 -5.0
2655 11.5 -2.5 0.9 1.5 -4.5
BGS8U5 LTE3301U SOT1232 2.8 4.5 < 1 3400 16.0 -3.5 1.1 2.0 -11.0
3800 14.5 -3.5 1.0 2.0 -9.0
BGS8C5 LTE3301C SOT1232 2.8 4.6 < 1 5200 15.0 -4 1.25 0.0 -9.0
5800 15.0 -4 1.25 0.0 -10.0
-LTE3401L SOT1232 2.8 4.5 < 1
740 18.0 -3 0.7 0.0 -1.0
4 1882 18.0 -3 0.7 0.0 -1.0
943 18.0 -3 0.7 0.0 -1.0
% also available in WL-CSP package with slightly deviating specification, detailed information available on request
Type name New name Package Vcc (V)
I
cc, gain
(mA)
Icc, bypass
(µA)
Icc, TX/BT
(µA)
Frequency
(MHz) Gain (dB) Gainbypass
(dB) NF (dB) NFTX/BT
(dB)
IP3
i (dBm) PL, 1dB
(dBm) ton, off (ns)
typ typ typ typ typ typ typ typ typ max
BGU7224 -SOT1189 3.3 13 2 - 2400-2500 15 -5.5 1.0 -5.5 -3 150
BGU7258 -SOT1189 3.3 12 1 - 5100 14 -7 1.6 - 8 -4 150
5900 13 -7 1.6 - 8 -4 150
BGS8324 WLAN3001H SOT1261 3.3 8.3 8200/8 2400-2500 16 -6 2.0 0.8/0.95 7 7 400
BGS8358 WLAN3001C SOT1260 3.3 9.5 8150/- 4900-5925 12.5 -8 2.3 0.75/- 10 -6 400
BGS8424 WLAN3002H SOT1260 3.3 8.4 4150/4 2400-2500 15.5 -6.5 2.0 0.7/0.95 6-4.5 500
BGS8458 WLAN3002C SOT1234 3.3 10.7 3.5 150/- 4900-5925 13.5 -7 2.4 0.7/- 9 0 500
type name dual
branding Package frequency
(MHz)
Vcc (V)
RX gain mode RX bypass mode TX mode
Icc (mA) Gain (dB) NF (dB) PL, 1dB (dBm) Icc (mA) Gain (dB)
Icc @ 17
dBm
(mA)
Gain (dB)
DEVM @
17 dBm
(%)
DEVM @
19 dBm
(%)
typ typ typ typ typ typ typ typ typ
BGF8458 WLAN7001C SOT1436 5150-5850 3.6 814 2.35 -3 5-5.5 180 28 1.8 3.0
LTE LNAs mobile and wearables
LNA (+ switches) for WLAN
FEIC for WLAN

41NXP Semiconductors RF Manual 20th edition
Products by function
Type name Package Frequency
range (MHz) Mode VCC (V) Icc (mA) Gain
(dB) NF (dB) PL , 1dB (dBm) IP3o (dBm) FL (dB) RLout (dB) RLin (dB)
BGU7031 SOT363 40 - 1000 GP 10 dB 5 43 10 4.5 14 29 -0.2 12 18
BGU7032 SOT363 40 - 1000 GP 10 dB 5 43 10 4.5 14 29 -0.2 12 18
Bypass 5 4 -2 2.5 - 29 -0.2 8 8
BGU7033 SOT363 40 - 1000
GP 10 dB 5 43 10 4.5 14 29 -0.2 12 18
GP 5 dB 5 43 5 6 9 29 -0.2 12 17
Bypass 5 4 -2 2.5 - 29 -0.2 8 8
BGU7041 SOT363 40 - 1000 GP 10 dB 3.3 38 10 412 29 -0.2 12 21
BGU7042 SOT363 40 - 1000 GP 10 dB 3.3 38 10 412 29 -0.2 12 21
Bypass 3.3 3-2 2.5 - 29 -0.2 10 10
BGU7044 SOT363 40 - 1000 GP 14 dB 3.3 34 14 2.8 13 29 -0.2 12 20
BGU7045 SOT363 40 - 1000 GP 14 dB 3.3 34 14 2.8 13 29 -0.2 12 20
Bypass 3.3 3-2 2.5 - 27 -0.2 10 9
LNA for set-top boxes (75 Ω)
Type New name Package VCC (V) Icc (mA) Frequency (MHz) Gain (dB) NF (dB) PL, 1dB
(dBm) IP3o (dBm) IP3o, bypass
(dBm) RLin (dB) RLout (dB)
typ typ min max typ typ typ typ typ typ typ
BGU7060 -SOT1301-1 5200 700 800
322,4 12,7 31,8 - - -
17 10,5 5,6 20,5 - 28,2 23,5
18 6,11 -5,5 6,1 - - -
35 0,84 -12,6 1 - 27, 2 19
BGU7061 -SOT1301-1 5200 800 950
321,4 13,2 31,2 - - -
17 11, 2 5,6 21,4 -23,7 19
18 6,47 -4,8 6,3 - - -
35 0,87 -12.5 2 - 31,5 18
BGU7062N2 -SOT1301-1 5215 1710 1785
322.1 10.9 30 - - -
17 10.5 5.8 20.9 -22 17. 3
18 5.95 - 6.1 4.6 - - -
35 0.94 -12.3 1 - 23.5 17.5
BGU7063 -SOT1301-1 5
190 1920 1980 322 10,5 28 - -
17 11,3 620 25 18
230 1920 1980 18 6.4 -6.4 5.4 - - -
35 1.05 -12.5 0.9 -31 15
BGU7073 BTS5001M SOT1301-1 5245 1850 2010
319,7 9,5 21,8 - - -
17 9,7 5,7 18.3 -31,6 15
18 5,8 -6,3 5,5 - - -
35 1,1 -11,6 1 - 28,5 19,5
BGU7075 BTS5001H SOT1301-1 5264 2500 2570
319,7 10,4 22 - - -
17 10,4 5,5 17,9 - 28 15
18 5,6 -5,7 4,3 - - -
35 1,2 -12 0,8 -22,5 21,4
BGU7078 BTS5002M SOT1301-1 5245 1710 1785
320.5 10.9 23 - - -
17 10.1 6.3 19,3 -33 12,8
18 6.1 -5.7 5.5 - - -
35 1-11.3 1.5 -25,7 15,6
BGU8051 BTS1001L SOT1327-1 550 900 900 18 0.43 19.3 41 -27 20
BGU8052 BTS1001M SOT1327-1 547 1900 1900 18 0.52 19 39 -27 12
BGU8053 BTS1001H SOT1327-1 551 2500 2500 18 0.63 20 39 -23 12
BGU8061 BTS3001L SOT650-1
700 700 22,6 1,1 20,6 36,1 45,8 8,9 9,8
900 900 20,9 1,1 20,7 36,8 45,3 10,9 11,6
1500 1500 17,1 1,2 20,3 37,1 44,6 17, 2 16,1
BGU8062 BTS3001M SOT650-1
1500 1500 20,9 1,1 20,2 36 44,7 10,6 21,8
1900 1900 18,5 1,2 20,2 35,6 43,5 12,6 34
2700 2700 15,9 1,5 18,8 35 42,6 15,8 17, 8
BGU8063 BTS3001M SOT650-1 570
2500 2500 18,5 1,5 19,1 34,0 42,8 12,7 11,5
3000 3000 16,6 1,4 18,9 33,6 42,5 11,6 9,6
3500 3500 15,1 1,7 18,3 33,2 41,5 10,5 8,6
LNAs for wireless infrastructure

42 NXP Semiconductors RF Manual 20th edition
3.1.2 Wideband amplifiers
General purpose wideband amplifiers 50 ohm
Type Package
VCC (V) Icc (mA) Gain (dB) PL, 1dB (dBm) NF (dB) IP3o (dBm) Zout
(W)
external
inductor
typ typ 250
MHz
500
MHz
750
MHz
250
MHz 500 MHz 750
MHz
250
MHz
500
MHz
750
MHz
250
MHz
750
MHz
BGA2870 SOT363 2.5 15.6 31.2 31.1 31 54 4 3.1 3.2 3.7 15 13 50 N
BGA2874 SOT363 2.5 16 31.1 31 30.6 54 4 3 3.1 3.4 19 17 50 N
BGA2800 SOT363 310.5 19.9 20.5 20.2 -2 3.7 3.6 3.7 11 850 N
BGA2803 SOT363 35.8 23.6 23.4 23 -6 -6 -8 3.7 3.6 3.4 5 2 50 N
BGA2801 SOT363 314.3 22.2 22.4 23 22 0 3.8 3.8 3.9 14 950 N
BGA2802 SOT363 312.5 25.6 25.8 25.5 31-3 4.2 4.1 3.6 13 650 N
BGA2815 SOT363 318.2 25.8 25.3 25.2 8 5 1 3.7 3.8 3.7 17 10 50 N
BGA2817 SOT363 320 24.5 24.7 25.1 6 6 5 3.9 3.9 3.8 18 15 50 N
BGA2818 SOT363 319.9 30.1 29.8 30 7 6 4 3.5 3.3 3.3 18 14 50 N
BGA2851 SOT363 5 7 23.3 24.7 25.2 -3 -4 -5 43.2 3 8 5 50 N
BGA2866 SOT363 517.4 23.2 23.9 24.3 4 4 3 3.9 3.8 3.9 17 12 50 N
BGA2867 SOT363 521.7 26.4 27. 2 27. 2 6.8 6.5 4.9 3.7 3.8 3.7 18.8 14.1 50 N
BGA2869 SOT363 522 30.9 30.9 32.2 8.8 8.8 7.6 3.8 3.9 420 19 50 N
BGM1013 SOT363 527.5 35.3 35.6 32.1 13 8.1 4.6 4.6 4.9 22.7 18.6 75 Y
Extreme broadband amplifiers
Type Package Frequency
range (MHz)
VCC (V) Icc (mA) Gain (dB) NF (dB) PL, 1dB (dBm) IP3o (dBm) IP2o (dBm)
typ typ
BGA3012 SOT89
40 - 1006 8110 12 3.1 23 40 60
570 12 2.9 18.0 36 54
5 - 300 8110 12 3.0 23.0 40 60
570 12 2.9 17.0 40 55
BGA3015 SOT89
40 - 1006 8110 15 2.5 24 40 60
570 15 2.3 18.0 36 55
5 - 300 8110 15 2.3 24.0 40 60
570 15 2.3 18.0 40 55
BGA3018 SOT89
40 - 1006 8120 18 2.1 25 40 60
575 18 2.2 18.0 36 54
5 - 300 8120 18 1.9 25.0 40 60
575 18 1.9 20.0 36 54
BGA3021 SOT786-2 40 - 1200
8350 16 5.5 29 47 85
8175 16 4.1 26 38 68
5165 16 4.1 23 38 69
BGA3022 SOT786-2 40 - 1200
8350 18 5.1 30 47 85
8175 18 3.8 24 38 69
5165 18 3.8 24 38 71
BGA3023 SOT786-2 40 - 1200
8350 20 530 46.5 85
8175 19 3.7 25 38 67
5165 19 3.7 23 38 68

43NXP Semiconductors RF Manual 20th edition
Products by function
3.1.3 variable gain and discrete step amplifiers
VGA's for wireless infratructure
Type name Package Type
VCC (V) Icc (mA) frequency range (MHz)
Gain @
minimum
attenuation
(dB)
Attenuation
range (dB) NF (dB) PL, 1dB (dBmV) IP3O (dBm)
typ typ min max typ typ typ
BGA7204 SOT617-3 Single
5115 400 700 18.5 31.5 721 38
5115 700 1450 18.5 31.5 6.5 21 37.5
5115 1450 2100 17.5 30.5 6.5 20.5 36
5115 2100 2750 16.5 30 720 34
BGA7210 SOT617-3 Single
5185 700 1400 30 31.5 6.5 21 39
5185 1400 1700 29.5 31.5 6.5 21 37
5185 1700 2200 29 31.5 6.5 21 35
5185 2200 2800 28 30.5 723 35
5185 3400 3800 26 29.5 819 27
BGA7350 SOT617-1 Dual 5245 50 250 18.5 24 617 43
BGA7351 SOT617-1 Dual 5 280 50 250 22 28 6 16.5 46
Upstream VGA for DOCSIS 3.0 & 3.1
Type name DOCSIS
standard Package
VCC (V) Icc (mA) frequency range (MHz)
Gain @
minimum
attenuation
(dB)
Attenuation
range (dB) NF (dB) PL, 1dB (dBmV) IMD3 @ 64
dBmV (dBc)
typ typ min max typ typ typ
BGA3031 3.0 SOT662 5310 585 34 58 3.5 74 -70
BGA3131 3.1 SOT662 5310 5205 34 58 3.5 74 -70
2-stage variable-gain linear amplifier
Type Package VCC (V) Icc (mA) Frequency
range (MHz)
@ 900 MHz @ 1900 MHz Limits
Gain(1)
(dB)
DG(2)
(dB)
PL, 1dB
(dBm)
ACPR
(dBc)
Gain(1)
(dB)
DG(2)
(dB)
PL, 1dB
(dBm)
ACPR
(dBc) VCC (V) Icc (mA) Ptot
(mW)
BGA2031/1 SOT363 351 800 - 2500 24 62 11 49 23 56 13 49 3.3 77 200
(1) Gain = GP, power gain (2) DG = gain control range

44 NXP Semiconductors RF Manual 20th edition
3.1.4 Power amplifiers
General purpose medium power amplifier
Type Package VCC (V) Icc (mA) Frequency range
[MHz]
RF input
frequency
[MHz]
Gain (dB) PL, 1dB
(dBm) IP3o (dBm) NF (dB)
typ typ min typ typ typ typ
BGA6489 SOT89 5.1 78 100-3000 900 20.0 20.0 33.0 3.1
1800 16.0 17.0 30.0 3.3
BGA6589 SOT89 4.8 81 100-3000 900 22.0 21.0 33.0 3
1800 17.0 20.0 32.0 3.3
BGA7024 SOT89 5110 400 - 2700
940 22.0 24.0 37. 5 2.9
1960 16.0 25.5 38.0 3.7
2140 15.0 25.5 38.0 3.7
2445 14.0 24.5 37.5 4.0
BGA7027 SOT89 5165 400 - 2700
940 19.0 29.0 41.5 2.6
1960 11.5 27.5 43.0 3.8
2140 11.0 28.0 42.5 3.9
BGA7124 SOT908 5140 400 - 2700
940 23.0 25.0 38.5 5.2
1960 16.5 24.5 38.0 4.6
2140 16.0 24.5 37. 5 4.8
2445 14.0 23.5 36.0 5.4
BGA7127 SOT908 5180 400 - 2700
940 20.0 27.5 41.5 3.1
1960 13.0 28.5 42.5 4.5
2140 12.0 28.0 42.0 4.6
2445 10.5 27. 5 41.5 4.7
BGA7130 SOT908 5450 400 - 2700 750 18.0 30.0 43.0 5.0
2140 10.0 30.0 44.0 5.0
BGA6130 SOT908 3.6 70 400 - 2700 434 17.0 28.0 29.5 4.5
915 14.0 29.0 30.0 4.0
3.1.5 Modulators, mixers, PLL and downconverters
Why choose NXP’s low-noise LO generators:
`Lowest total cost of ownership
`Alignment-free concept
`Easy circuit design-in
`Improved LO stability
type name dual
branding Package frequency
(MHz)
Vcc (V)
RX gain mode
RX bypass mode
TX mode
Icc (mA)
Gain (dB)
NF (dB) PL, 1dB (dBm) Icc (mA) Gain (dB)
Icc @ 17
dBm
(mA)
Gain (dB)
DEVM @
17 dBm
(%)
DEVM @
19 dBm
(%)
typ typ typ typ typ typ typ typ typ
BGF8458 WLAN7001C SOT1436 5150-5850 3.6 814 2.35 -3 5-5.5 180 28 1.8 3.0
FEIC for WLAN
Type name Package VCC (V) fLO (MHz) Icc (mA) fLO (MHz) Po
(dBm) BWmod
(MHz)
Nflr(o) (dBm/
Hz)*
PL, 1dB
(dBm)
IP2o
(dBm)
IP3o
(dBm)
SBS
(dBm)
CF
(dBm)
typ range typ typ typ typ typ typ typ typ typ
BGX7100 SOT616-3 5400 - 4000
165 750 -0.2 400 -159 / -158.5 11.5 71 29 55 -55
165 910 -0.2 400 -159 / -158.5 11.5 72 29 49 -55
173 1840 -0.2 400 -158.5 / -158 11.5 69 27 47 -50
173 1960 -0.2 400 -158.5 / -158 11.5 72.5 27 49 -48
178 2140 -0.2 400 -158.5 / -158 11.5 74 27 51 -45
178 2650 -0.2 400 111.5 62 26 60 -45
184 3650 -0.2 400 111.5 60 25 53 -43
BGX7101 SOT616 -3 5400 - 4000
172 750 4650 -159 / -158.5 12 71 28 63 -51
172 910 4650 -159 / -158.5 12 75 28 49 -57
180 1840 4650 -158.5 / -158 12 71 27 55 -50
180 1960 4650 -158.5 / -158 12 72 27 57 -47
178 2140 4650 -158.5 / -158 12 75 27 63 -45
182 2650 4650 112 65 26 50 -45
188 3650 4650 112 65 25 57 -42
* Without modulation/with modulation
IQ modulators for wireless infrastructure

45NXP Semiconductors RF Manual 20th edition
Products by function
Low-noise LO generators for VSAT applications
Type name Package fIN(REF) (MHz) Vcc (V) I (mA)
PLL output buffer input
phase noise @
N=64, @ 100
kHz (dBc/Hz)
fout(RF) (GHz) Pout (dBm) RLout(RF) (dB) Si (dBm)
typ typ max typ max min
TFF1003HN SOT616 50 - 815 3.3 100 -92 12.8 - 13.05 -5 -10 -10
TFF1007HN SOT616 230.46 - 234.38 3.3 100 -104 14.62 - 15 -3 -10 -10
Type name Package VCC (V) Icc (mA) RF input frequency
[MHz]
Local oscillator
frequency (MHz)
Second-order
spurious
rejection 2RF-
2LO (dBc)
NFSSB
single
sided (dB)
IP3i (dBm) Gconv (dB)
typ typ min max min max max typ typ typ
BGX7220 SOT1092-2 5330 700 950 500 1150 -60 10 26 8
BGX7221 SOT1092-2 5365 1400 2700 1500 2500 -60 10 25.5 8.5
Type name Package Input freq
range (GHz) Vcc (V) I (mA) Gconv (dB) NF (dB) IP3o (dBm) LO Freq
(GHz)
Integrated phase
noise density
(degrees RMS)
TFF1044HN SOT1359-1 10.7 - 12.75 5 190 30-36 815 9.75 & 10.6 1.5
Type name Package Input freq
range (GHz) Vcc (V) I (mA) Gconv (dB) NF (dB) IP3o (dBm) LO Freq
(GHz)
Integrated phase
noise density
(degrees RMS)
TFF1024HN SOT763-1 10.7 - 12.75 5 54 30 716 9.75 / 11.3 1
Type name Package Input freq
range (GHz) Vcc (V) I (mA) Gconv (dB) NF (dB) IP3o (dBm) LO Freq
(GHz)
Integrated phase
noise density
(degrees RMS)
TFF1012HN SOT763-1 10.7 - 12.75 5 56 30 817 9.75 / 10.6 1.5
TFF1013HN SOT763-1 10.7 - 12.75 5 56 34 817 9.75 / 10.6 1.5
TFF1014HN SOT763-1 10.7 - 12.75 5 52 36 713 9.75 / 10.6 1.5
TFF1015HN SOT763-1 10.7 - 12.75 5 52 39 713 9.75 / 10.6 1.5
TFF1017HN SOT763-1 10.7 - 12.75 5 52 42 713 9.75 / 10.6 1.5
TFF1018HN SOT763-1 10.7 - 12.75 5 52 45 713 9.75 / 10.6 1.5
Dual mixers for wireless infrastructure
Dual downconverter with PLL/VCO and switch matrix
Downconverter with PLL/VCO for VSAT
Downconverter with PLL/VCO
Low-noise LO generators for general microwave applications
Type Package fIN(REF) (MHz) Vcc (V) I (mA)
PLL output buffer input Frequency
band
phase noise
@ N=64, @
100 kHz (dBc/
Hz)
phase noise
@ N=64, @
10 MHz (dBc/
Hz)
fout(RF) (GHz) Pout (dBm) RLout(RF)
(dB) Si (dBm)
typ typ max max Min typ Max typ max Min
TFF11088HN SOT616 34 - 562 3.3 100 -95 -131 8.59 8.79 8.99 -5 -10 -10 X
TFF11092HN SOT616 35 - 588 3.3 100 -95 -131 8.99 9.2 9.41 -5 -10 -10 X
TFF11096HN SOT616 37 - 616 3.3 100 -95 -131 9.41 9.63 9.85 -5 -10 -10 X
TFF11101HN SOT616 39 - 633 3.3 100 -95 -131 9.92 10.02 10.13 -3 -10 -10 X
TFF11132HN SOT616 51 - 846 3.3 100 -95 -131 12.9 13.2 13.5 -5 -10 -10 Ku
TFF11139HN SOT616 53 - 886 3.3 100 -95 -131 13.54 13.85 14.17 -5 -10 -10 Ka
TFF11142HN SOT616 55 - 901 3.3 100 -95 -131 14.13 14.27 14.42 -4 -10 -10 X
TFF11145HN SOT616 55 - 927 3.3 100 -95 -131 14.17 14.5 14.83 -5 -10 -10 Ka

46 NXP Semiconductors RF Manual 20th edition
3.2 RF bipolar transistors
3.2.1 Wideband transistors
Why choose NXP’s wideband transistors:
`Broad portfolio (1st - 7th generation)
`Short lead time
`Smallest packages
`Volume delivery
Wideband transistor line-ups by frequency
Wideband transistors
The fT-IC curve represents transition frequency (fT) characteristics
as a function of collector current (IC) for the seven generations
of RF wideband transistors. A group of transistors having the
same IC and similar fT represents a curve. The curve number
matches the products in the selection tables of this section
(third column of each table), detailing their RF characteristics.
RF wideband transistor selection guide on
www.nxp.com/rftransistors
Easy-to-use parametric filters help you choose the right RF wideband
transistor for your design.
Pin Description
Type (Figure 1)
1Collector
2Base
3Emitter
4Emitter
Type/X (Figure 1)
1Collector
2Emitter
3Base
4Emitter
Type/XR (Figure 2)
1Collector
2Emitter
3Base
4Emitter
12
34
21
34
Figure 1 Figure 2
bra510
100
10
1
fT
(GHz)
0.1 0.5 12 5102050 100 200 500
1000
I
C
(mA)
0.2
(1)
(7) (9)
1st generation
2nd generation
3rd generation
4th generation
5th generation
7th generation
6th generation
(8) (10)
(18)
(20) (21)
(29)
(37)
(35)
(39)
(41)
(38) (40)
(34)
(36)
(32)
(33)
(26) (27)
(25)
(11)
(4)
(14)
(19)
(42) 9th generation

47NXP Semiconductors RF Manual 20th edition
Products by function
RF power transistors for portable equipement (VHF)
Type
Package
VCEO (max)
(V)
IC
(max)
(mA)
Ptot
(max)
(mW)
Polarity
GUM (typ)
(dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
BLT50 SOT223 10 500 2000 NPN - - - -
BLT81 SOT223 9.5 500 2000 NPN - - - -
RF wideband tranistors generation 1-4
Type
Generation
Curve
Package
fT
(typ) (GHz)
VCEO
(max) (V)
IC
(max) (mA)
Ptot
(max) (mW)
Polarity
GUM (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
GUM (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
NF (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
NF (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
BFT25 1 1 SOT23 2.3 5 6.5 30 NPN 18 500 1 1 12 800 1 1 3.8 500 1 1 - - - -
BFG35 211 SOT223 418 150 1000 NPN 15 500 100 10 11 800 100 10 --------
BFQ18A 211 SOT89 418 150 1000 NPN ----------------
BFS25A 218 SOT323 5 5 6.5 32 NPN ----13 1000 0.5 11.8 1000 1 1 - - - -
BFT25A 218 SOT23 5 5 6.5 32 NPN ----15 1000 0.5 11.8 1000 0.5 1----
BFT92 2 7 SOT23 5-15 -25 300 PNP 18 500 -14 -10 - - - - 2.5 500 -5 -10 ----
BFT92W 2 7 SOT323 4-15 -35 300 PNP 17 500 -15 -10 11 1000 -15 -10 2.5 500 -5 -10 31000 -5 -10
BFT93 2 9 SOT23 5-12 -35 300 PNP 16.5 500 -30 -5 2.4 500 -10 -5 --------
BFT93W 2 9 SOT323 4-12 -50 300 PNP 15.5 500 -30 -5 10 1000 -30 -5 2.4 500 -10 -5 31000 -10 -5
PBR941 420 SOT23 810 50 360 NPN 9.5 2000 15 6----1.4 1000 5622000 5 6
PRF947 420 SOT323 8.5 10 50 250 NPN 10 2000 15 6----1.5 1000 5 6 2.1 2000 5 6
RF wideband transistor applications
Function LNAs, mixers, frequency multipliers, buffers
High-linearity, high-output
amplifiers and drives
Oscillators
Frequency
range
<2 GHz <6 GHz 6-10 GHz 12-18 GHz <2 GHz <6 GHz 6-10 GHz 12-18 GHz <6 GHz 6-10 GHz 12-18 GHz
Type/band ISM433,
ISM866 L,S,C X ku low Ku high, kz ISM433,
ISM866 L,S,C X ku low Ku high, kz L,S,C X ku low Ku high, kz
BFU520* •
BFU530* •
BFU550* •
BFU580* •
BFU590* •
BFU610F • • •
BFU630F • • • • •
BFU660F • • • •
BFU690F •• • • •
BFU725F/N1 •• • • • • •
BFU710F •• • •
BFU730F ••• •••• •
BFU730LX ••• •••• •
BFU760F • • • • •
BFU790F • • •
BFU768F • • • • •
BFU910F • • • •
* Multiple package types available Red = application note available on NXP.com

48 NXP Semiconductors RF Manual 20th edition
RF wideband transistors generations 5
Type
Package
fT
(typ)(GHz)
hFE(typ)
VCEO (max)(V)
VCES (max)(V)
VEBO (max)(V)
IC
(max)(mA)
Ptot
(max)(mW)
Gp(max)(typ)(dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
Gp(max)(typ)(dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
NFmin (typ)(dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
NFmin (typ)(dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
P
L(1dB)_50Ω
(typ)(dBm)
@ f = (MHz)
@ I
C
= (mA)
@ V
CE
= (V)
IP3o_50Ω
(typ)(dBm)
@ f = (MHz)
@ I
C
= (mA)
@ V
CE
= (V)
BFU520W SOT323 10 95 12 24 230 450 23 433 5 8 19 900 5 8 0.7 433 5 8 0.8 900 587900 10 817 900 10 8
BFU530W SOT323 11 95 12 24 240 450 24 433 10 819 900 10 80.8 433 10 80.9 900 10 810 900 15 820 900 15 8
BFU550W SOT323 11 95 12 24 250 450 24 433 15 818 900 15 80.9 433 15 80.9 900 15 814 900 25 823 900 25 8
BFU520A SOT23 10 95 12 24 230 450 23 433 5 8 18 900 5 8 0.7 433 5 8 0.8 900 587900 10 817 900 10 8
BFU530A SOT23 11 95 12 24 240 450 23 433 10 818 900 10 80.8 433 10 80.9 900 10 810 900 15 820 900 15 8
BFU550A SOT23 11 95 12 24 250 450 24 433 15 818 900 15 80.9 433 15 81.0 900 15 814 900 25 823 900 25 8
BFU520 SOT143 11 95 12 24 230 450 20 900 5 8 17 1800 5 8 0.8 900 5 8 0.9 1800 5871800 10 817 1800 10 8
BFU530 SOT143 11 95 12 24 240 450 21 900 10 817 1800 10 80.9 900 10 81.0 1800 10 810 1800 15 819 1800 15 8
BFU550 SOT143 11 95 12 24 250 450 21 900 15 815 1800 15 81.0 900 15 81.1 1800 15 813 1800 25 823 1800 25 8
BFU520X SOT143X 11 95 12 24 230 450 20 900 5 8 17 1800 5 8 0.8 900 5 8 0.9 1800 5 8 10 1800 10 820 1800 10 8
BFU530X SOT143X 11 95 12 24 240 450 21 900 10 817 1800 10 80.9 900 10 81.0 1800 10 810 1800 15 820 1800 15 8
BFU550X SOT143X 11 95 12 24 250 450 22 900 15 816 1800 15 81.0 900 15 81.1 1800 15 814 1800 25 823 1800 25 8
BFU520XR SOT143XR 11 95 12 24 230 45020 900 5 8 17 1800 5 8 0.8 900 5 8 0.9 1800 5871800 10 817 1800 10 8
BFU530XR SOT143XR 11 95 12 24 240 450 21 900 10 817 1800 10 80.9 900 10 81.0 1800 10 810 1800 15 819 1800 15 8
BFU550XR SOT143XR 11 95 12 24 250 450 22 900 15 816 1800 15 81.0 900 15 81.1 1800 15 813 1800 25 823 1800 25 8
BFU580Q SOT89 11 95 12 24 260 1000 20 433 20 814 900 20 81.0 433 20 81.1 900 20 815 900 30 825 900 30 8
BFU590Q SOT90 895 12 24 2200 2000 18 433 50 811 900 50 8 - 433 50 8 - 900 50 822 900 80 832 900 80 8
BFU580G SOT223 11 95 12 24 260 1000 22 433 20 816 900 20 81.0 433 20 81.1 900 20 815 900 30 824 900 30 8
BFU590G SOT223 995 12 24 2200 2000 20 433 50 813 900 50 8 - 433 50 8 - 900 50 822 900 80 831 900 80 8
BFU520Y SOT363 10 95 12 24 230 450 23 433 5 8 19 900 5 8 0.7 433 5 8 0.8 900 587900 10 817 900 10 8
RF broadband generations 6 to 9
Type
Generation
Curve
Package
f
T
(typ) (GHz)
V
CEO
(max) (V)
I
C
(max) (mA)
P
tot
(max) (mW)
Polarity
GUM (typ) (dB)
@ f = (MHz)
@ I
C
= (mA)
@ V
CE
= (V)
NF (typ) (dB)
@ f = (MHz)
@ I
C
= (mA)
@ V
CE
= (V)
NF (typ) (dB)
@ f = (MHz)
@ I
C
= (mA)
@ V
CE
= (V)
PL(1dB) (typ) (dBmW)
@ V
CE
= (V)
@ f = (MHz)
@ I
C
= (mA)
IP3 (typ) (dBm)
@ IC = (mA)
@ VCE = (V)
BFU610F 634 SOT343F 40 510 50 NPN 21 5800 8 2 0.75 2400 1 2 1.4 5800 1 2 - - - - 14 8 5
BFU630F 636 SOT343F 40 530 130 NPN 28 2400 25 20.58 1500 5 2 0.73 2400 5 2 - - - - 23 25 5
BFU660F 638 SOT343F 40 570 200 NPN 28.5 1500 60 20.6 1500 20 20.75 2400 20 2 - - - - 30 60 5
BFU690F 640 SOT343F 40 5100 300 NPN 25.6 1500 90 20.7 1500 50 20.9 2400 50 2 - - - - 35 90 5
BFU710F 735 SOT343F 70 2.8 10 30 NPN 16.5 12000 8 2 0.9 5800 2 2 1.5 12000 2 2 - - - - 14.5 8 2
BFU725F/N1 737 SOT343F 70 2.8 40 136 NPN 18 5800 25 20.47 2400 5 2 0.7 5800 5 2 8 2 5800 25 19 25 2
BFU730F 733 SOT343F 70 2.8 30 130 NPN 18.5 5800 25 20.56 2400 5 2 0.8 5800 5 2 - - - - 20.5 25 2
BFU730LX 7 - SOT883C 53 3.0 30 160 NPN 13.3 5800 25 20.55 2400 5 2 0.8 5800 5 2 - - - - 26 12.4 2.3
BFU760F 739 SOT343F 70 2.8 70 220 NPN 25 2400 60 20.5 1500 20 20.6 2400 20 2 - - - - 23 60 2
BFU790F 741 SOT343F 70 2.8 100 250 NPN 20.4 2400 90 20.56 1500 50 20.7 2400 50 2 - - - - 24 90 2
BFU768F 739 SOT343F 70 2.8 70 220 NPN 13 5800 10.8 2.1 0.5 2400 10.8 2.1 0.7 5800 10.8 2.1 52.1 5800 10.8 19 10.8 2.1
BFU910F 9SOT343F 90 2.0 15 300 NPN 15.5 10700 10 20.6 10700 6 2 0.65 12700 6 2 2 2 12000 10 12.5 10 2

49NXP Semiconductors RF Manual 20th edition
Products by function
3.3 RF diodes
3.3.1 Varicap diodes
Why choose NXP’s varicap diodes:
`Reference designs for TV and radio tuning
`Direct matching process
`Small tolerances
`Short lead time
`Complete portfolio covering broad range of frequencies and packages (including leadless)
`Reliable volume supply
Varicap selection guide on www.nxp.com/varicaps
Easy-to-use parametric filters help you choose the right
varicap for your design.
VCO and FM radio tuning varicap diodes
Type Package
Number
of
diodes
Config
@ f = 1 MHz rs
typ
rs
max @ f =
Cd1
typ @ VR = Cd2
typ @ VR = Cd1/Cd2
typ
pF VpF V Ω Ω MHz
BB145B SOD523 1SG 6.8 12.75 4 2.5 - 0.6 470
BB156 SOD323 1SG 16 14.8 7.5 2.5 0.4 0.7 470
BB201 SOT23 2 CC 95 127.6 7.5 3.4 0.25 0.5 100
BB202^ SOD523 1SG 30.9 0.2 9.2 2.3 3.4 0.35 0.6 100
BB207* SOT23 2 CC 81 127.6 7.5 2.9 0.2 0.4 100
BB208-02* SOD523 1SG 21.6 14.9 7.5 4.4 0.35 0.5 100
BB208-03* SOD323 1SG 21.6 14.9 7. 5 4.4 0.35 0.5 100
* Includes special design for FM car radio (CREST-IC:TEF6860 Type of connection: CC = common cathode
^ Includes special design for mobile phone tuner ICs SG = single
VHF varicap diodes
Type Package
@ f = 1 MHz
rs typ rs max @ f =
Cd1 typ @ VR
=Cd2 typ @ VR
=Cd1/Cd2
typ
(pF) (V) (pF) (V) (Ω) (Ω) (MHz)
BB170 SOD323 39.3 1 2.6 28 15 -0.9 100
BB171 SOD323 57.0 12.7 28 21 11.2 100
BB172 SOD323 38.5 1 2.6 28 15 0.65 0.8 100
BB173 SOD523 38.5 1 2.6 28 15 0.65 0.8 100
BB175 SOD523 57.0 12.7 28 21 11.2 100
BB131 SOD323 12.5 0.5 0.9 28 14 - 3 470
BB181 SOD523 12.5 0.5 0.9 28 14 - 3 470
BBY40 SOT23 29.0 35.1 25 6 - 0.7 200
UHF varicap diodes
Type Package
@ f = 1 MHz
rs typ rs max @ f =
Cd1
typ
@ VR
=
Cd2
typ
@ VR
=Cd1/Cd2
typ
(pF) (V) (pF) (V) (Ω) (Ω) (MHz)
BB174 SOD523 19 12.1 28 9.0 0.6 0.75 470
BB135 SOD323 20 0.5 1.9 28 9.5 -0.75 470

50 NXP Semiconductors RF Manual 20th edition
3.3.2 PIN diodes
Why choose NXP’s PIN diodes:
`Broad portfolio
`Unrivaled performance
`Short lead time
`Low series inductance
`Low insertion loss
`Low capacitance
PIN diodes: typical Rd < 2 Ohm at 1 mA, attenuator diodes
Type Package Number
of diodes Config VR max
(V)
IF max
(mA)
@ f = 100 MHz @ f = 1 MHz
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA @ VR =
0 V @ VR = 1 V @ VR = 20 V
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
Cd
typ
(pF)
Cd
typ
(pF)
Cd max
(pF)
Cd
typ
(pF)
Cd
max
(pF)
BAP65LX SOD882D 1SG 30 100 - - 0.94 -0.49 0.9 0.61 0.48 0.85 0.37 -
BAP65-02 SOD523 1SG 30 100 - - 1 - 0.56 0.9 0.65 0.55 0.9 0.375 -
BAP65-03 SOD323 1SG 30 100 - - 1 - 0.56 0.9 0.65 0.55 0.9 0.375 -
BAP65-05 SOT23 2 CC 30 100 - - 1 - 0.56 0.9 0.7 0.575 0.9 0.425 -
BAP65-05W SOT323 2 CC 30 100 - - 1 - 0.56 0.9 0.7 0.575 0.9 0.425 -
PIN diode selection guide on www.nxp.com/pindiodes
Easy-to-use parametric filters help you choose the right PIN
diode for your design.
brb407
r
D
(Ω)
10−1 102
101
200
100
600
500
400
300
700
Cd
(fF)
0
BAP142LX
BAP64LX
BAP1321-02
BAP51LX
BAP142LX
BAP50LX
BAP64LX
BAP70-02
BAP70-02
Freq = 100 MHz, Cd @ V R = 0 V
rD @ 0.5 mA rD @ 10 mA
BAP65LX
BAP55LX BAP55LX
BAP65LX
BAP51LX
BAP1321-02 BAP50LX
brb408
Insertion Loss (dB)
10−2 10110−1
10
15
5
20
25
Isolation
(dB)
0
BAP51LX
BAP50LX
BAP64LX
BAP51LX
BAP142LX
BAP65LX BAP65LX
BAP55LX
BAP142LX
BAP64LX
BAP50LX
Freq = 1800 MHz, Isolation @ V R = 0 V
Insertion Loss @ 0.5 mA
Insertion Loss @ 10 mA
For more information: www.nxp.com/pindiodes
PIN diodes: selection on isolation and insertion loss in SODD882D
Type
ISL (isolation ) IL (Insertion loss)
f =
900 MHz
f =
1800 MHz
f =
2450 MHz f = 900 MHz f = 1800 MHz f = 2450 MHz
V
R
=
0 V
V
R
=
0 V
V
R
=
0 V
I
F
=
0.5 mA
I
F
=
1 mA
I
F
=
10 mA
I
F
=
100 mA
I
F
=
0.5 mA
I
F
=
1 mA
I
F
=
10 mA
I
F
=
100 mA
I
F
=
0.5 mA
I
F
=
1 mA
I
F
=
10 mA
I
F
=
100 mA
BAP65LX 10 5.5 3.9 0.09 0.06 0.06 0.05 0.09 0.07 0.07 0.06 0.1 0.08 0.08 0.07
BAP55LX 19 14 12 0.24 0.17 0.08 0.05 0.25 0.18 0.09 0.07 0.26 0.19 0.1 0.08
BAP142LX 18 13 11 0.24 0.18 0.1 0.07 0.24 0.19 0.11 0.09 0.25 0.25 0.12 0.1
BAP51LX 19 15 13 0.36 0.25 0.12 0.9 0.36 0.26 0.14 0.1 0.38 0.27 0.15 0.12
BAP64LX 22 16 14 1.22 0.22 0.12 0.09 1.21 0.23 0.13 0.1 1.22 0.24 0.15 0.11
BAP50LX 20.3 17.9 16.5 1.82 1.07 0.25 -1.8 1.06 0.26 -1.81 1.08 0.27 -
SG = single CC = common cathode
SR = series CA = common anode

51NXP Semiconductors RF Manual 20th edition
Products by function
PIN diodes: typical Rd = 2.2-2.4 Ohm at 1 mA, attenuator diodes
Type Package Number of
diodes Config VR max
(V)
IF max
(mA)
@ f = 100 MHz @ f = 1 MHz
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA @ VR =
0 V @ VR = 1 V @ VR = 20 V
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
Cd
typ
(pF)
Cd
typ
(pF)
Cd
max
(pF)
Cd
typ
(pF)
Cd max
(pF)
BAP55LX SOD882D 1SG 50 100 3.3 4.5 2.2 3.3 0.8 1.2 0.28 0.23 -0.18 0.28
BAP142LX SOD882D 1SG 50 100 3.3 5 2.4 3.6 11.8 0.25 0.22 -0.16 0.26
PIN diodes: typical Rd = 3.2-3.6 Ohm at 1 mA, attenuator diodes
Type Package Number
of diodes Config VR max
(V)
IF max
(mA)
@ f = 100 MHz @ f = 1 MHz
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA @ VR =
0 V @ VR = 1 V @ VR = 20 V
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
Cd
typ
(pF)
Cd
typ
(pF)
Cd
max
(pF)
Cd
typ
(pF)
Cd max
(pF)
BAP51LX SOD882D 1SG 60 100 4.9 93.2 6.5 1.4 2.5 0.3 0.22 0.4 0.17 0.3
BAP51-02 SOD523 1SG 60 50 5.5 93.6 6.5 1.5 2.5 0.4 0.3 0.55 0.2 0.35
BAP51-03 SOD323 1SG 50 50 5.5 93.6 6.5 1.5 2.5 0.4 0.3 0.55 0.2 0.35
BAP51-04W SOT323 2SR 50 50 5.5 93.6 6.5 1.5 2.5 0.4 0.3 0.55 0.2 0.35
BAP51-05W SOT323 2 CC 50 50 5.5 93.6 6.5 1.5 2.5 0.4 0.3 0.55 0.2 0.35
BAP51-06W SOT323 2CA 50 50 5.5 -3.6 -2-0.4 0.3 -0.2 -
PIN diodes: typical Rd = 10 Ohm at 1 mA, attenuator diodes
Type Package Number
of diodes Config VR max
(V)
IF max
(mA)
@ f = 100 MHz @ f = 1 MHz
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA @ VR =
0 V @ VR = 1 V @ VR = 20 V
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
Cd
typ
(pF)
Cd
typ
(pF)
Cd
max
(pF)
Cd
typ
(pF)
Cd
max
(pF)
BAP64Q SOT753 4SR 100 100 20 40 10 20 23,8 0.52 0.37 -0.23 0.35
BAP64-02 SOD523 1SG 175 100 20 40 10 20 23.8 0.48 0.35 -0.23 0.35
BAP64-03 SOD323 1SG 175 100 20 40 10 20 23.8 0.48 0.35 -0.23 0.35
BAP64-04 SOT23 2SR 175 100 20 40 10 20 23.8 0.52 0.37 -0.23 0.35
BAP64-04W SOT323 2SR 100 100 20 40 10 20 23.8 0.52 0.37 -0.23 0.35
BAP64-05 SOT23 2 CC 175 100 20 40 10 20 23.8 0.52 0.37 -0.23 0.35
BAP64-05W SOT323 2 CC 100 100 20 40 10 20 23.8 0.52 0.37 -0.23 0.35
BAP64-06 SOT23 2CA 175 100 20 40 10 20 23.8 0.52 0.37 -0.23 0.35
BAP64-06W SOT323 2CA 100 100 20 40 10 20 23.8 0.52 0.37 -0.23 0.35
BAP64L X^ SOD882D 1SG 60 100 31 50 16 26 2.6 4.4 0.48 0.34 -0.17* 0.3*
PIN diodes: typical Rd = 14-16 Ohm at 1 mA, attenuator diodes
Type Package Number
of diodes Config VR max
(V)
IF max
(mA)
@ f = 100 MHz @ f = 1 MHz
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA @ VR =
0 V @ VR = 1 V @ VR = 5 V
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
Cd
typ
(pF)
Cd
typ
(pF)
Cd
max
(pF)
Cd
typ
(pF)
Cd
max
(pF)
BAP50-02 SOD523 1SG 50 50 25 40 14 25 3 5 0.4 0.3 0.55 0.22 0.35
BAP50-03 SOD323 1SG 50 50 25 40 14 25 3 5 0.4 0.3 0.55 0.2 0.35
BAP50-04 SOT23 2SR 50 50 25 40 14 25 3 5 0.45 0.35 0.6 0.3 0.5
BAP50-04W SOT323 2SR 50 50 25 40 14 25 3 5 0.45 0.35 0.6 0.3 0.5
BAP50-05 SOT23 2 CC 50 50 25 40 14 25 3 5 0.45 0.3 0.5 0.35 0.6
BAP50-05W SOT323 2 CC 50 50 25 40 14 25 3 5 0.45 0.35 0.6 0.3 0.5
BAP50LX SOD882D 1SG 50 50 26 40 14 25 3 5 0.4 0.28 0.55 0.19 0.35
PIN diodes : typical rD @ 1 mA = 40, attenuator diodes
Type Package Number
of diodes Config VR max
(V)
IF max
(mA)
@ f = 100 MHz @ f = 1 MHz
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA @ VR =
0 V @ VR = 1 V @ VR = 20 V
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
Cd
typ
(pF)
Cd
typ
(pF)
Cd
max
(pF)
Cd
max
(pF)
Cd
typ
(pF)
BAP70Q SOT753 4SR 50 100 77 100 40 50 5.4 70.6 0.43 -0.25 0.3
BAP70-02 SOD523 1SG 50 100 77 100 40 50 5.4 70.57 0.4 -0.2 0.25
BAP70-03 SOD323 1SG 50 100 77 100 40 50 5.4 70.57 0.4 -0.2 0.25
BAP70-04W SOT323 2SR 50 100 77 100 40 50 5.4 70.6 0.43 -0.25 0.3
BAP70-05 SOT23 2 CC 50 100 77 100 40 50 5.4 70.6 0.43 -0.25 0.3
BAP70AM SOT363 4SR 50 100 77 100 40 50 5.4 70.57 0.4 -0.2 0.25
^ attenuator / switching diode * @ VR = 20 V

52 NXP Semiconductors RF Manual 20th edition
3.3.3 Band-switch diodes
Why choose NXP’s band-switch diodes:
`Reliable volume supplier
`Short lead time
`Low series inductance
`Low insertion loss
`Low capacitance
`High reverse isolation
Type Package VR max
(V)
IF max
(mA)
rD max
(Ω)
@ IF =
(mA)
@ f =
(MHz)
Cd max
(pF)
@ VR =
(V)
@ f =
(MHz)
BA591 SOD323 35 100 0.7 3100 0.9 3 1
BA891 SOD523 35 100 0.7 3100 0.9 3 1
BAT18 SOT23 35 100 0.7 5200 120 1
Band-switch diode selection guide on www.nxp.com/products/diodes
Easy-to-use parametric filters help you choose the right Band-switch diode
for your design.

53NXP Semiconductors RF Manual 20th edition
Products by function
3.4 RF MOS transistors
3.4.1 JFETs
Why choose NXP’s JFETs:
`Reliable volume supplier
`Short lead time
`Broad portfolio
JFET selection guide on www.nxp.com/rffets
Easy-to-use parametric filters help you choose the right junction
field-effect transistor for your design.
N-channel field-effect transistors for switching
Type Package
VDS IG
Characteristics
IDSS Vgsoff RDSON Crs ton toff
(V) (mA) (mA) (V) (Ω) (pF) (ns) (ns)
max max min max min max max min max typ max typ max
PMBFJ108 SOT23 25 50 80 - 3 10 8 - 15 4-6-
PMBFJ109 SOT23 25 50 40 - 2 6 12 -15 4-6-
PMBFJ110 SOT23 25 50 10 -0.5 418 -15 4-6
PMBF4391 SOT23 40 50 50 150 410 30 -3.5 -15 -20
PMBF4393 SOT23 40 50 530 0.5 3100 -3.5 -15 -50
P-channel field-effect transistor for switching
Type Package
VDS IG
Characteristics
IDSS Vgsoff RDSON Crs ton toff
(V) (mA) (mA) (V) (Ω) (pF) (ns) (ns)
max max min max min max max min max typ max typ max
PMBFJ177 SOT23 30 50 1.5 20 0.8 2.25 300 45 -45 -
N-channel field-effect transistors for general RF applications
Type Package
VDS IG
Characteristics
IDSS Vgsoff |Yfs| Crs
(V) (mA) (mA) (V) (mS) (pF)
max max min max min max min max min max
DC, LF, and HF amplifiers
BF545A SOT23 30 10 26.5 0.4 7. 5 36.5 0.8 -
BF545B SOT23 30 10 615 0.4 7. 5 36.5 0.8 -
BF545C SOT23 30 10 12 25 0.4 7. 5 36.5 0.8 -
BF556A SOT23 30 10 3 7 0.5 7.5 4.5 -0.8 -
Pre-amplifiers for AM tuners in car radios
BF861A SOT23 25 10 26.5 0.2 1.0 12 20 2.1 2.7
BF861B SOT23 25 10 615 0.5 1.5 16 25 2.1 2.7
BF861C SOT23 25 10 12 25 0.8 220 30 2.1 2.7
BF862 SOT23 20 10 10 25 0.3 235 -typ. 1.9
RF stages FM portables, car radios, main radios, and mixer stages
BF510(1) SOT23 20 10 0.7 3 0.8 (typ) 2.5 0.4 0.5
BF511(1) SOT23 20 10 2.5 7 1.5 (typ) 4 0.4 0.5
BF512(1) SOT23 20 10 6 12 2.2 (typ) 6 0.4 0.5
BF513(1) SOT23 20 10 10 18 3 (typ) 0.4 0.5
Low-level general-purpose amplifiers
BFR30 SOT23 25 5 4 10 < 5 1 4 1.5 -
BFR31 SOT23 25 5 1 5 < 2.5 1.5 4.5 1.5 -
General-purpose amplifiers
BFT46 SOT23 25 50.2 1.5 < 1.2 > 1 1.5 -
AM input stages UHF/VHF amplifiers
PMBFJ308 SOT23 25 50 12 60 16.5 >10 1.3 2.5
PMBFJ309 SOT23 25 50 12 30 1 4 >10 1.3 2.5
(1) Asymmetrical

54 NXP Semiconductors RF Manual 20th edition
3.4.2 MOSFETs
Why choose NXP's MOSFETs:
`Reference designs for TV tuning
`Short lead time
`Broad portfolio
`Smallest packages
`2-in-1 FETs for tuner applications
`Reliable volume supply
`Highest performing MOSFETs for TV tuning
N-channel, single MOSFETs for switching
Type Package
VDS Characteristics
IDIDSS VGS(th) RDSON |S21(on)|2|S21(off )|2
MODE
(V) (mA) (mA) (V) (Ω) (dB) (dB)
max max min max min max max max min
Silicon RF switches
BF1107 SOT23 310 -100 - 7 20 2.5 30 Depl.
BF1108 SOT143B 310 -100 - 7 20 330 Depl.
BF1108R SOT143R 310 -100 - 7 20 330 Depl.
RF MOSFET selection guide on www.nxp.com/rffets
Easy-to-use parametric filters help you choose the right RF MOSFET for your design.
N-channel, dual-gate MOSFETs
Type Package
VDS ID
Characteristics
IDSX VGS(th) |Yfs| Cis Cos F @ 800
MHz VHF UHF
(V) (mA) (mA) (V) (mS) (pF) (pF) (dB)
max max min max min max min max typ typ typ
With external bias
BF992 SOT143 20 40 ----1.3 20 - 4 2 1.2(1) X -
BF994S SOT143 20 30 420 --2.5 15 -2.5 1 1(1) X -
BF996S SOT143 20 30 420 --2.5 15 -2.3 0.8 1.8 - X
Fully internal bias
BF1105R SOT343R 730 816 -0.3 225 -2.2 (3) 1.2(2) 1.7 X X
(1) @ 200 MHz
(2) COSS
(3) Cig

55NXP Semiconductors RF Manual 20th edition
Products by function

56 NXP Semiconductors RF Manual 20th edition
BUILDING ON DECADES
OF RF LEADERSHIP
Our application experts work with you to solve any design
challenge to help you realize a clear competitive advantage.

57NXP Semiconductors RF Manual 20th edition
Design support
4. Design support
4.1 Explore NXP's RF portfolio
Beyond this RF Manual, you can learn about NXP’s broad
RF portfolio through the NXP Technical Academy, various
webinars, and the NXP channel on YouTube.
On NXP’s YouTube channel,
www.youtube.com/user/nxpsemiconductors, there are short
videos that explain NXP's portfolio, application information, tips
and tricks to optimize your system's performance, and more.
4.2 Product selection on NXP.com
Every RF product has its own webpage on the NXP website.
Pages can be accessed in several ways: by product tree, by
application area, or via cross-reference search. Or, simply type
'nxp <product>' in the Google search bar.
Product tree and parametric search
Our online product tree (www.nxp.com/products/rf) categorizes
the product by function. The parametric search tool allows you
to refine the selection based on performance requirements.
4.3 Product evaluation
NXP offers a broad range of support material for evaluating
RF products and optimizing the performance of your
application.
Datasheets and application notes
The first chapter of this RF Manual includes application
diagrams, recommended type numbers, and product
highlights. More in-depth application information is available in
the product datasheets or in the Application Notes.
Simulation tools
To help you evaluate our products in your specific application,
NXP offers various simulation tools, including small-signal
touchstone S-parameters and parametric models that let you
customize the biasing conditions. The parametric models are
based on best-in-class Mextram models developed by Philips
This chapter guides you through the available tools, documents, materials, and links that ease
the design-in of our products.
Research, a recognized leader in physics-based models. The
parametric models fully support AC, DC, S-parameter, harmonic
balance, and time-domain simulations. These models allow
designers to assess the performance of complex systems at an
early stage of the development process.
The models are available for Advanced Design System (ADS),
Microwave Office (MWO), Genesys, and Ansoft Designer.
Spice versions of the parametric models, which can be used with
almost any commercial design tool, are also available.
Customer evaluation kits and samples
Several kits are available for product evaluation. Boards are
provided with industry-standard RF connectors to facilitate
measurements and design-in. The features and contents of
each kit are described on the NXP website and are listed on
the corresponding product page. On the Customer Evaluation
Kits page you can also find support materials, such as the
latest user manuals and software updates. You can order small
quantities of all products to build and evaluate prototypes. To
obtain a kit or order samples, please contact your local NXP
representative or authorized distributor.

58 NXP Semiconductors RF Manual 20th edition
4.4 Additional design-in support
If you need additional design-in support, please contact your local NXP sales representative or authorized distributor.
You can also submit a question using the web form on the NXP website.
4.5 Application notes
AN number AN title Application product type name new type name
automotive
AN11024 SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz automotive BFU690 -
AN11066 SDARS active antenna 1st stage LNA with BFU730F, 2.33 GHz automotive BFU730F -
broadband communication
AN11209 Set-Top Box LNAs BGU703X and BGU704X broadband
communication BGU703x, BGU704x -
AN11220 BGA3012 - 1 GHz 12 dB gain wideband amplifier MMIC broadband
communication BGA3012 -
AN11221 BGA3015 - 1 GHz 15 dB gain wideband amplifier MMIC broadband
communication BGA3015 -
AN11222 BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC broadband
communication BGA3018 -
AN11228 BGA301x Wideband Variable Gain Amplifier Application broadband
communication BGA301x -
AN11293 BGA3012 - 5 MHz to 300 MHz 12 dB reverse amplifier
application
broadband
communication BGA3012 -
AN11294 BGA3015 - 5 MHz to 300 MHz 15 dB reverse amplifier
application
broadband
communication BGA3015 -
AN11295 BGA3018 - 5 MHz to 300 MHz 18 dB reverse amplifier
application
broadband
communication BGA3018 -
AN11296 BGA3018 - 40 MHz to 2600 MHz wideband amplifier
application
broadband
communication BGA3018 -
AN1129 9 BGA301x - 40 MHz to 1006 MHz push-pull application broadband
communication BGA301x -
AN115 41 Optical mini node….. broadband
communication -
AN115 45 BGA3023 - 1.2 GHz 20 dB gain CATV amplifier broadband
communication BGA3023 -
AN115 4 6 BGA3022 - 1.2 GHz 18 dB gain CATV amplifier broadband
communication BGA3022 -
AN115 47 BGA3021 - 1.2 GHz 16 dB gain CATV amplifier broadband
communication BGA3021 -
AN1175 3 BGA3131 Thermal considerations broadband
communication BGA3131 -
AN11817 BGA3131 DOCSIS 3.1 upstream amplifier broadband
communication BGA3131 -
general purpose
AN11152 Reducing the Spurs at RF_out caused by the biasing choke
during fast switching on and off in TDD system general purpose - -
UM10414 General Purpose Wideband Amp in SOT363 Demo Board general purpose - -
UM10559 BFU6xx/BFU7xx Transistor Starter Kit Users Manual general purpose BFU6xx, BFU7xx -
UM10772 User Manual BFU5xx series starter kits general purpose BFU5xx -

59NXP Semiconductors RF Manual 20th edition
Design support
Application notes (continued)
AN number AN title Application product type name new type name
general purpose LNA
AN11006 Single stage 2.3_2.7GHz LNA with BFU730F general purpose LNA BFU730F -
AN11072 BGU7003 400 MHz and 900 MHz application general purpose LNA BGU7003 -
AN11103 Externally-matched 900 MHz LNA using BGU7005 general purpose LNA BGU7005 GPS1101M
AN11118 BFU725F/N1 1.5 GHz LNA evaluation board general purpose LNA BFU725F/N1 -
AN1114 8 BGU7003 1900MHz to 2100MHz LNA Application general purpose LNA BGU7003 -
AN11339 Maximum RF Input Power BFU730LX general purpose LNA BFU730LX -
AN11377 BFU520A ISM 433 MHz LNA design general purpose LNA BFU520A -
AN11378 BFU520A ISM 866 MHz LNA design general purpose LNA BFU520A -
AN11379 BFU530A ISM 433 MHz LNA design general purpose LNA BFU530A -
AN1138 0 BFU530A ISM 866 MHz LNA design general purpose LNA BFU530A -
AN11381 BFU550A ISM 433 MHz LNA design general purpose LNA BFU550A -
AN11382 BFU550A ISM 866 MHz LNA design general purpose LNA BFU550A -
AN11421 BFU520W ISM 433 MHz LNA design general purpose LNA BFU520W -
AN11422 BFU520W ISM 866 MHz LNA design general purpose LNA BFU520W -
AN11423 BFU530W ISM 433 MHz LNA design general purpose LNA BFU530W -
AN11424 BFU530W ISM 866 MHz LNA design general purpose LNA BFU530W -
AN11425 BFU550W ISM 433 MHz LNA design general purpose LNA BFU550W -
AN11426 BFU550W ISM 866 MHz LNA design general purpose LNA BFU550W -
AN11427 BFU520 ISM 433 MHz LNA design general purpose LNA BFU520 -
AN11428 BFU520 ISM 866 MHz LNA design general purpose LNA BFU520 -
AN11429 BFU530 ISM 433 MHz LNA design general purpose LNA BFU530 -
AN1143 0 BFU530 ISM 866 MHz LNA design general purpose LNA BFU530 -
AN11431 BFU550 ISM 433 MHz LNA design general purpose LNA BFU550 -
AN11432 BFU550 ISM 866 MHz LNA design general purpose LNA BFU550 -
AN11433 BFU520X ISM 433 MHz LNA design general purpose LNA BFU520X -
AN11434 BFU520X ISM 866 MHz LNA design general purpose LNA BFU520X -
AN11435 BFU530X ISM 433 MHz LNA design general purpose LNA BFU530X -
AN11436 BFU530X ISM 866 MHz LNA design general purpose LNA BFU530X -
AN11437 BFU550X ISM 433 MHz LNA design general purpose LNA BFU550X -
AN11438 BFU550X ISM 866 MHz LNA design general purpose LNA BFU550X -
AN11439 BFU520XR ISM 433 MHz LNA design general purpose LNA BFU520XR -
AN114 40 BFU520XR ISM 866 MHz LNA design general purpose LNA BFU520XR -
AN114 41 BFU530XR ISM 433 MHz LNA design general purpose LNA BFU530XR -

60 NXP Semiconductors RF Manual 20th edition
AN number AN title Application product type name new type name
AN114 42 BFU530XR ISM 866 MHz LNA design general purpose LNA BFU530XR -
AN114 43 BFU550XR ISM 433 MHz LNA design general purpose LNA BFU550XR -
AN11444 BFU550XR ISM 866 MHz LNA design general purpose LNA BFU550XR -
AN114 81 2.62 ~ 2.69GHz LNA by using BGU7003 general purpose LNA BGU7003 -
AN11499 Highly Linear FM LNA design with BFU580Q general purpose LNA BFU580Q -
AN115 0 0 Highly Linear FM LNA design with BFU580G general purpose LNA BFU580G -
AN11787
Low-Cost External Remote Keyless Entry (RKE) Low Noise
Amplifier for 315/433/868 MHz Automotive Applications
using the BFU520W RF Transistor
general purpose LNA BFU520W -
AN11865 BGU6104 Low Noise Amplifier for ISM/LTE bands general purpose LNA BGU6104 -
AN11866 BGU6102 Low Noise Amplifier for ISM/LTE bands general purpose LNA BGU6102 -
AN11867 BGU6101 Low Noise Amplifier for ISM/LTE bands general purpose LNA BGU6101 -
UM10455 User manual for the BGU7003 100MHz LNA evaluation board general purpose LNA BGU7003 -
UM10483 BFU725F/N1 2.4 GHz to 6.0 GHz LNA demonstration board general purpose LNA BFU725F/N1 -
UM10517 User manual for the BGU7003 868MHz LNA evaluation board general purpose LNA BGU7003 -
general purpose MPA
AN1119 0 Application Note for the BGA7130 EVB 865 - 880 MHz general purpose MPA BGA7130 -
AN11191 Application Note for the BGA7130 EVB 1930 - 1995 MHz general purpose MPA BGA7130 -
AN115 01 BFU590G ISM 866 MHz PA design general purpose MPA BFU590G -
AN115 02 BFU590Q ISM 866 MHz PA design general purpose MPA BFU590Q -
AN115 03 BFU590G ISM 433 MHz PA design general purpose MPA BFU590G -
AN115 0 4 BFU590Q ISM 433 MHz PA design general purpose MPA BFU590Q -
UM10565 User Manual for OM7828/BGA6130/Kit general purpose MPA BGA6130 -
UM10566 User Manual for OM7941/BGA7130LTE general purpose MPA BGA7130 -
UM10567 User Manual for OM7942/BGA7130WCDMA general purpose MPA BGA7130 -
GPS
AN11086 BGU7003 LNA application for GPS L2 band GPS BGU7003 -
mobile FM
AN11034 High Ohmic FM LNA for embedded Antenna in Portable
applications with BGU7003W mobile FM BGU7003W -
AN11035 50 Ohm FM LNA for embedded Antenna in Portable
applications with BGU7003W mobile FM BGU7003W -
AN11090 50 Ohm FM LNA for embedded Antenna in Portable
applications with BGU6102 mobile FM BGU6102 -
AN11091 High ohmic FM LNA for embedded Antenna in Portable
applications with BGU6102 mobile FM BGU6102 -
AN11734 Maximum RF Input Power BGU6101 mobile FM BGU6101 -
AN11735 Maximum RF Input Power BGU6102 mobile FM BGU6102 -
AN11736 Maximum RF Input Power BGU6104 mobile FM BGU6104 -
Application notes (continued)

61NXP Semiconductors RF Manual 20th edition
Design support
AN number AN title Application product type name new type name
mobile GPS
AN11068 BGU8007/BGU7005 Matching Options for Improved LTE
Jammer Immunity mobile GPS BGU7005/BGU8007 GPS1101M/-
AN11101 BGU7007 GPS front end evaluation board mobile GPS BGU7007 GPS1102M
AN11230 BGU8006 GNSS LNA evaluation board mobile GPS BGU8006 -
AN11284 BGU8006 GNSS front end evaluation board mobile GPS BGU8006 -
AN11288 BGU8009 GNSS LNA evaluation board mobile GPS BGU8009 GPS1201M
AN11317 BGU8009 GNSS front end evaluation board mobile GPS BGU8009 GPS1201M
AN11336 BGU8010 GNSS LNA evaluation board mobile GPS BGU8010 -
AN11337 BGU8011 GNSS LNA evaluation board mobile GPS BGU8011 -
AN11338 BGU8011 GNSS front end evaluation board mobile GPS BGU8011 -
AN11353 BGU8009/BGU7005 L2 and L5 Band LNA Application mobile GPS BGU7005/BGU8009 GPS1101M/GPS1201M
AN11357 BGU8009 Matching Options for 850 MHz / 2400 MHz
Jammer Immunity mobile GPS BGU8009 GPS1201M
AN11368 BGU8019 GNSS LNA evaluation board mobile GPS BGU8019 GPS1202M
AN11369 BGU8004 GNSS LNA evaluation board mobile GPS BGU8004 -
AN11420 NXP GPS LNA - GPS LNA voltage supply via a coax cable
coming from the GPS receiver mobile GPS - -
AN11515 BGU6005/N2 GNSS LNA evaluation board mobile GPS BGU6005 GPS1001M
AN11525 BGU6009/N2 GNSS LNA evaluation board mobile GPS BGU6009 GPS1002M
AN11527 BGU8019 GNSS front end evaluation board mobile GPS BGU8019 GPS1202M
AN11573 BGU8103 GNSS LNA evaluation board mobile GPS BGU8103 GPS1301M
AN11678 BGU8103UK GNSS LNA evaluation board mobile GPS BGU8103 GPS1301M
AN11729 BGU8309 GNSS LNA evalution board mobile GPS BGU8309 GPS1401M
AN11872 BGU8309 GNSS LNA+B13 notch filter evaluation board mobile GPS BGU8309 GPS1401M
AN11912 BGU8103 [GPS1301M] GNSS L2-band LNA evaluation board mobile GPS BGU8103 GPS1301M
AN11913 BGU8019 [GPS1202M] tuned for GNSS L2-band evaluation mobile GPS BGU8019 GPS1202M
UM10339 User Manual for the BGU7003 GPS LNA demo boards v2.0 mobile GPS BGU7003 -
UM10381 User manual for the BGU7005 GPS Front-end evaluation
board mobile GPS BGU7005 GPS1101M
UM10453 2-Tone Test BGU7005 and BGU7007 GPS LNA mobile GPS BGU7005/BGU7007 GPS1101M/GPS1102M
UM10454 User manual for the BGU7003 2.4GHz LNA evaluation board mobile GPS BGU7003 -
UM10459 User manual for the BGU7007 GPS LNA evaluation board mobile GPS BGU7007 GPS1102M
UM10488 User manual for the BGU7008 GPS LNA evaluation board mobile GPS BGU7008 GPS1104M
UM10489 2-Tone Test BGU7004 and BGU7008 GPS LNA mobile GPS BGU7004/BGU7008 GPS1103M/GPS1104M
UM10490 User manual for the BGU7004 GPS Front end evaluation
board mobile GPS BGU7004 GPS1103 M
UM10491 User manual for the BGU7004 GPS LNA evaluation board mobile GPS BGU7004 GPS1103M
UM10497 User manual for the BGU8007 GPS LNA evaluation board mobile GPS BGU8007 -
Application notes (continued)

62 NXP Semiconductors RF Manual 20th edition
Application notes (continued)
AN number AN title Application product type name new type name
mobile LTE
AN11512 BGU8L1 LTE LNA evaluation board mobile LTE BGU8L1 LTE1001L
AN11513 BGU8M1 LTE LNA evaluation board mobile LTE BGU8M1 LTE1001M
AN11514 BGU8H1 LTE LNA evaluation board mobile LTE BGU8H1 LTE1001H
AN11594 BGU8H1UK LTE LNA evaluation board mobile LTE BGU8H1UK LTE1001HC
AN11595 BGU8M1UK LTE LNA evaluation board mobile LTE BGU8M1UK LTE10 01MC
AN116 5 4 BGS8L2 LTE LNA with bypass switch evaluation board mobile LTE BGS8L2 LTE3001L
AN116 55 BGS8M2 LTE LNA with bypass switch evaluation board mobile LTE BGS8M2 LTE3 0 01M
AN116 5 6 BGS8H2 LTE LNA with bypass switch evaluation board mobile LTE BGS8H2 LTE3001H
AN116 8 0 BGS8M2UK LTE LNA with bypass switch evaluation board mobile LTE BGS8M2UK LTE30 01MC
AN116 81 BGS82H2UK LTE LNA with bypass switch evaluation board mobile LTE BGS8H2UK LTE3001HC
AN1174 8 BGS8L4UK LTE LNA with bypass switch evaluation board mobile LTE BGS8L4UK LTE3101LC
AN11749 BGS8M4UK LTE LNA with bypass switch evaluation board mobile LTE BGS8M4UK LTE3101MC
AN11790 BGS8L5UK with bypass switch evaluation board mobile LTE BGS8L5UK LTE33 01LC
AN11791 BGS8H5UK with bypass switch evaluation board mobile LTE BGS8H5UK LTE3301HC
mobile TV
AN11097 CMMB LNA with BGU7003, 400 MHz to 800 MHz mobile TV BGU7003 -
satellite
AN11010 Single stage Ku band LNA using BFU730F satellite BFU730F -
AN1114 4 Universal Single LNB with TFF101x FIMOD IC satellite TFF101x -
AN11516 TFF1024 EVB and application recommendations satellite TFF1024 -
AN11571 TFF1044 EVB Evaluation Results satellite TFF1044 -
AN116 40 TFF1044 Quad DCV Application Recommendations satellite TFF1044 -
AN11674 A Ku band quad LNB reference design based on TFF1044HN satellite TFF1044 -
AN11698 BFU910F for Ku band Universal Single LNB applications satellite BFU910F -
UM10484 Integrated clean-up-PLL, TFF1xxxx and buffer amplifier satellite TFF1xxxx -
wireless infrastructure
AN11135 Replacing HMC625 by NXP BGA7204 wireless infrastructure BGA7204 -
AN11251 BGA7210 Operation Frequency Extension Down to 400 MHz wireless infrastructure BGA7210 BTS6001A
AN11152 BGA7210 Reducingthe Spurs at RF_out caused by the
biasing choke during fast switching on and off in TDD system wireless infrastructure BGA7210 BTS6001A
AN10998 BGX7221 evaluation board application note wireless infrastructure BGX7221 -
AN11014 BGX7100 evaluation board application note wireless infrastructure BGX7100 -
AN11132 BGX7220 evaluation board application note wireless infrastructure BGX7220 -

63NXP Semiconductors RF Manual 20th edition
Design support
Application notes (continued)
AN number AN title Application product type name new type name
AN11171 BGU7063 evaluation board application note wireless infrastructure BGU7063 -
AN11189 BGX7101 evaluation board application note wireless infrastructure BGX7101 BTS8001A
AN11313 BGU7062N2 evaluation board application note wireless infrastructure BGU7062 -
AN11416 1900 MHz low noise, high linearity amplifier using BGU8052 wireless infrastructure BGU8052 BTS1001M
AN11417 900 MHz low noise, high linearity amplifier using BGU8051 wireless infrastructure BGU8051 BTS1001L
AN11418 2500 MHz low noise, high linearity amplifier using BGU8053 wireless infrastructure BGU8053 BTS1001H
AN11556 BGU8051 900MHz LNA improved IRL wireless infrastructure BGU8051 BTS1001L
AN11557 BGU8052 1900MHz LNA improved IRL wireless infrastructure BGU8052 BTS1001M
AN11558 BGU8053 2500 MHz LNA improved IRL wireless infrastructure BGU8053 BTS1001H
AN11559 LNA for 450 MHz using BGU8051 wireless infrastructure BGU8051 BTS1001L
AN115 6 0 LNA for 3500 MHz using BGU8053 wireless infrastructure BGU8053 BTS1001H
AN116 3 8 BGU7060 Evaluation board application note wireless infrastructure BGU7060 -
AN116 39 BGU7061 evaluation board application note wireless infrastructure BGU7061 -
AN116 8 8 BGU8062 1500-2700 MHz High linear bypass LNA wireless infrastructure BGU8062 BTS3001M
AN11847 BGU8061 700-1500 MHz High Linear bypass LNA wireless infrastructure BGU8061 BTS3001L
AN11848 BGU8063 2500-4000 MHz High Linear bypass LNA wireless infrastructure BGU8063 BTS3001H
AN11852 BGU8062 bypass LNA delta gain wireless infrastructure BGU8062 BTS3001M
AN119 02 BGU8052 [BTS1001M] applied at 1.3 GHz wireless infrastructure BGU8052 BTS1001M
WLAN
AN11114 2.4-5.9GHz Broadband WiFi LNA With BFU730F WLAN BFU730F -
AN1114 0 Low Noise Fast Turn ON/OFF 5-5.9GHz WiFi LNA with
BFU730F WLAN BFU730F -
AN11184 Low Noise Fast Turn ON/OFF 5-5.9 GHz WiFi LNA with
BFU768F WLAN BFU768F -
AN11223 Low Noise Fast Turn ON/OFF 2.4-2.5GHz WiFi LNA with
BFU730LX WLAN BFU730LX -
AN11224 Low Noise Fast Turn ON/OFF 5-5.9GHz WiFi LNA with
BFU730LX WLAN BFU730LX -
AN11283 High Linearity Low Noise 2.4-2.5GHz WiFi LNA with ON5096 WLAN ON5096 -
AN11390 BGU7224 Low Noise Amplifier (256 QAM) 2.4 GHz WiFi LNA
MMIC with Bypass WLAN BGU7224 -
AN114 48 Low Noise Fast Turn ON-OFF 2.4-2.5GHz WiFi LNA with
BFU730F WLAN BFU730F -
AN11453 BGU7258 802.11 a/n/ac Low Noise Amplifier 5-6 GHz WiFi
LNA MMIC with Bypass WLAN BGU7258 -
AN11454 Low Cost High Gain Fast Turn On/Off 5-5.9GHz WiFi LNA
with BFU730F WLAN BFU730F -

64 NXP Semiconductors RF Manual 20th edition
4.6 Simulation models
4.6.1 Simulation models for RF bipolar wideband transistors
Attached to PIP /
model page
Supported simulators
Wideband
transistors
Demo
board
S-parameters
Spice model
Mextram
model
S-parameters
Spice model
Mextram
model
Device model
BFG35 √ √ ADS 2009, ADS 2011, Microwave Office,
Ansoft Designer
ADS 2009, ADS 2011, Microwave Office, Ansoft
Designer - -
BFG18A √ √ ADS 2009, ADS 2011, Microwave Office,
Ansoft Designer
ADS 2009, ADS 2011, Microwave Office, Ansoft
Designer - -
BFS25A √ √ ADS 2009, ADS 2011, Microwave Office, Ansoft
Designer ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - -
BFT25 √ADS 2009, ADS 2011, Microwave Office, Ansoft
Designer - - -
BFT25A √ √ ADS 2009, ADS 2011, Microwave Office, Ansoft
Designer ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - -
BFT92 √ √ ADS 2009, ADS 2011, Microwave Office, Ansoft
Designer ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - -
BFT92W √ √ ADS 2009, ADS 2011, Microwave Office, Ansoft
Designer ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - -
BFU520 √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU520A √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU520W √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU520X √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU520XR √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU520Y √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU530 √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU530A √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU530W √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU530X √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU530XR √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU550 √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU550A √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU550W √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU550X √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU550XR √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU580G √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU580Q √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU590G √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU590Q √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU610F √ √ √ √ ADS 2009, ADS 2011 ADS 2009, ADS 2011, Microwave Office ADS 2009, ADS 2011,
Microwave Office -
BFU630F √ √ √ √ ADS 2009, ADS 2011 ADS 2009, ADS 2011, Microwave Office ADS 2009, ADS 2011,
Microwave Office -
BFU660F √ √ √ √ ADS 2009, ADS 2011 ADS 2009, ADS 2011, Microwave Office ADS 2009, ADS 2011,
Microwave Office
-
BFU690F √ √ √ √ ADS 2009, ADS 2011 ADS 2009, ADS 2011, Microwave Office ADS 2009, ADS 2011,
Microwave Office -
BFU710F √ √ √ √ ADS 2009, ADS 2011 ADS 2009, ADS 2011, Microwave Office ADS 2009, ADS 2011,
Microwave Office -
BFU725F √ √ √ ADS 2009, ADS 2011, Microwave Office, Ansoft
Designer ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - -
BFU725F/N1 √ √ √ ADS 2009, ADS 2011, Microwave Office, Ansoft
Designer ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - -
BFU730F √ √ √ √ ADS 2009, ADS 2011 ADS 2009, ADS 2011, Microwave Office ADS 2009, ADS 2011,
Microwave Office -
BFU730LX √ √ √ ADS 2011 ADS 2011 ADS 2011 -

65NXP Semiconductors RF Manual 20th edition
Design support
Attached to PIP /
model page
Supported simulators
Wideband
transistors
Demo
board
S-parameters
Spice model
Mextram
model
S-parameters
Spice model
Mextram
model
Device model
BFU760F √ √ √ √ ADS 2009, ADS 2011 ADS 2009, ADS 2011, Microwave Office ADS 2009, ADS 2011,
Microwave Office -
BFU790F √ √ √ √ ADS 2009, ADS 2011 ADS 2009, ADS 2011, Microwave Office ADS 2009, ADS 2011,
Microwave Office -
BFU910F √ √ √ √ ADS 2009, ADS 2011 ADS 2009, ADS 2011, Microwave Office ADS 2009, ADS 2011,
Microwave Office -
BFT92W √ √ ADS 2009, ADS 2011, Microwave Office, Ansoft
Designer ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - -
BFT93 √ √ ADS 2009, ADS 2011, Microwave Office, Ansoft
Designer ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - -
BFT93W √ √ ADS 2009, ADS 2011, Microwave Office, Ansoft
Designer ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - -
BFU520 √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU520A √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU520W √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU520X √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU520XR √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU520Y √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU530 √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU530A √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU530W √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU530X √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU530XR √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU550 √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU550A √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU550W √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU550X √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU550XR √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU580G √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU580Q √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU590G √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU590Q √ √ √ √ ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012, Microwave office ADS 2011, ADS 2012 -
BFU610F √ √ √ √ ADS 2009, ADS 2011 ADS 2009, ADS 2011, Microwave Office ADS 2009, ADS 2011,
Microwave Office -
BFU630F √ √ √ √ ADS 2009, ADS 2011 ADS 2009, ADS 2011, Microwave Office ADS 2009, ADS 2011,
Microwave Office -
BFU660F √ √ √ √ ADS 2009, ADS 2011 ADS 2009, ADS 2011, Microwave Office ADS 2009, ADS 2011,
Microwave Office -
BFU690F √ √ √ √ ADS 2009, ADS 2011 ADS 2009, ADS 2011, Microwave Office ADS 2009, ADS 2011,
Microwave Office -
BFU710F √ √ √ √ ADS 2009, ADS 2011 ADS 2009, ADS 2011, Microwave Office ADS 2009, ADS 2011,
Microwave Office -
BFU725F √ √ √ ADS 2009, ADS 2011, Microwave Office, Ansoft
Designer ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - -
BFU725F/N1 √ √ √ ADS 2009, ADS 2011, Microwave Office, Ansoft
Designer ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - -
BFU730F √ √ √ √ ADS 2009, ADS 2011 ADS 2009, ADS 2011, Microwave Office ADS 2009, ADS 2011,
Microwave Office -
BFU730LX √ √ √ ADS 2011 ADS 2011 ADS 2011 -
BFU760F √ √ √ √ ADS 2009, ADS 2011 ADS 2009, ADS 2011, Microwave Office ADS 2009, ADS 2011,
Microwave Office -
BFU790F √ √ √ √ ADS 2009, ADS 2011 ADS 2009, ADS 2011, Microwave Office ADS 2009, ADS 2011,
Microwave Office -

66 NXP Semiconductors RF Manual 20th edition
Attached to PIP
/ model page
Supported simulators
MOSFET
Demo
board
S-parameters
Spice model
Mextram
model
S-parameters
Spice model
Mextram
model
Device model
PBR941 √ √ ADS 2009, ADS 2011, Microwave Office, Ansoft Designer ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - -
PRF947 √ √ ADS 2009, ADS 2011, Microwave Office, Ansoft Designer ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - -
BF511 √ ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - - -
BF513 √ ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - - -
BF862 √ √ ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - - -
BF862 √ √ ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - - -
BF904 √ - ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - -
BF908 √ - ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - -
4.6.2 Simulation models for RF MOSFET transistors
4.6.3 Simulation models for RF MMIC amplifiers
Attached to PIP / model
page
Supported simulators
MMIC
Demo
board
S-parameters
Spice model
Mextram
model
Device
model
S-parameters
Spice model
Mextram
model
Device model
BGA6589 √ √ ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - - -
BGA2800 √ √ ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - - -
BGA2801 √ √ ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - - -
BGA2815 √ √ ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - - -
BGA2866 √ √ ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - - -
BGA6130 √ √ - - - ADS 2011
BGA3012 √ √ √ ADS 2011 ADS 2011
BGA3015 √ √ √ ADS 2011 ADS 2011
BGA3018 √ √ √ ADS 2011 ADS 2011
BGA7027 √ √ - - - -
BGA7124 √ √ - - - -
BGA7127 √ √ - - - -
BGA7130 √ √ - - - ADS 2011
BGM1013 √ √ ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - - -
BGU6102 √ - - - -
BGU7031 √ - - - -
BGU7032 √ - - - -
BGU7033 √ - - - -
BGU7041 √ - - - -
BGU7042 √ - - - -
BGU7044 √ - - - -
BGU7045 √ - - - -
BGU7050 √ - - - -
BGU7051 √ - - - -
BGU7052 √ - - - -
BGU7053 √ - - - -
BGU7061 √ - - - -
BGU7062 √ - - - -
BGU7063 √ - - - -
BGU7064 √ - - - -
BGU7003 √ √ - - - -
BGU7003W √ - - - -
BGU7004 √ √ ADS 2011 - - -

67NXP Semiconductors RF Manual 20th edition
Design support
Simulation models for RF MMIC amplifiers (continued)
4.6.4 Simulation models for RF varicap diodes
Attached to PIP / model
page
Supported simulators
Varicap
diode
Demo
board
S-parameters
Spice model
Mextram
model
Device
model
S-parameters
Spice model
Mextram
model
Device model
BB145B √ - ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - -
BB156 √ - ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - -
BB201 √ - ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - -
BB202 √ - ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - -
BB207 √ - ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - -
BB208-2 √ - ADS 2009, ADS 2011, Microwave Office, Ansoft Designer - -
Attached to PIP / model
page
Supported simulators
MMIC
Demo
board
S-parameters
Spice model
Mextram
model
Device
model
S-parameters
Spice model
Mextram
model
Device model
BGU7005 √ √ √ ADS 2011 - - ADS 2011
BGU7007 √ √ √ ADS 2011 - - ADS 2011
BGU8006 √ √ √ ADS 2011 - - ADS 2011
BGU8007 √ √ ADS 2011 - - -
BGU8009 √ √ √ ADS 2011 - - ADS 2011
BGU7063 √ - - - -
BGU7064 √ - - - -
BGU7003 √ √ - - - -
BGU7003W √ - - - -
BGU7004 √ √ ADS 2011 - - -
BGU7005 √ √ √ ADS 2011 - - ADS 2011
BGU7007 √ √ √ ADS 2011 - - ADS 2011
BGU8006 √ √ √ ADS 2011 - - ADS 2011
BGU8007 √ √ ADS 2011 - - -
BGU8009 √ √ √ ADS 2011 - - ADS 2011

68 NXP Semiconductors RF Manual 20th edition
5. Replacement for discontinued parts
NXP end-of-life listings
www.nxp.com/products/eol/
5.1 Cross-references: NXP discontinued types versus NXP replacement types
In alphabetical order by discontinued type
NXP
discontinued type
Product family
NXP close replacement
BB148 varicap diodes BB170
BB152 varicap diodes BB171
BB153 varicap diodes BB172
BB173LX varicap diodes BB173
BB174LX varicap diodes BB174
BB178 varicap diodes BB173
BB178/L varicap diodes BB173
BB178LX varicap diodes BB173
BB181LX varicap diodes BB181
BB182 varicap diodes BB175
BB182/L varicap diodes BB175
BF1118 N-channel FET no NXP replacement
BF1118R N-channel FET no NXP replacement
BF1118W N-channel FET no NXP replacement
BF1118WR N-channel FET no NXP replacement
BF904 N-channel FET no NXP replacement
BF908 N-channel FET no NXP replacement
BF908R N-channel FET no NXP replacement
BF908WR N-channel FET no NXP replacement
BF991 N-channel FET no NXP replacement
BFG135 wideband transistor BFU590G
BFG198 wideband transistor BFU580G, BFU590G
BFG21W power transistor no NXP replacement
BFG31 PNP transistor no NXP replacement
BFG410W wideband transistor BFU610F
BFG425W wideband transistor BFU630F
BFG480W power transistor no NXP replacement
BFG505 wideband transistor BFU520
BFG505/X wideband transistor BFU520X
BFG520 wideband transistor BFU550
BFG520/X wideband transistor BFU550X
BFG520/XR wideband transistor BFU550XR
BFG520W wideband transistor no NXP replacement, only
with different package
BFG520W/X wideband transistor no NXP replacement, only
with different package
BFG540 wideband transistor BFU550
BFG540/X wideband transistor BFU550X
BFG540/XR wideband transistor BFU550XR
BFG540W wideband transistor no NXP replacement, only
with different package
BFG540W/X wideband transistor no NXP replacement, only
with different package
BFG540W/XR wideband transistor no NXP replacement, only
with different package
BFG541 wideband transistor BFU590G
BFG590/X wideband transistor no NXP replacement
BFG591 wideband transistor BFU590G
BFG67 wideband transistor BFU550
BFG67/X wideband transistor BFU550
BFG93A wideband transistor BFU530A
BFG97 wideband transistor BFU580G, BFU590G
BFM505 wideband transistor BFU520Y
NXP
discontinued type
Product family
NXP close replacement
BFM520 wideband transistor BFU520Y
BFQ149 PNP transistor no NXP replacement
BFQ19 wideband transistor BFU5980Q
BFQ540 wideband transistor BFU580Q, BFU590Q
BFQ591 wideband transistor BFU590Q
BFQ67 wideband transistor BFU530A
BFQ67W wideband transistor BFU530W
BFR106 wideband transistor BFU550A
BFR505 wideband transistor BFU520A
BFR520 wideband transistor BFU550A
BFR520T wideband transistor no NXP replacement, only
with different package
BFR540 wideband transistor BFU550A
BFR92A wideband transistor BFU530A
BFR92AW wideband transistor BFU520W
BFR93A wideband transistor BFU530A
BFR93AW wideband transistor BFU530W
BFR94A wideband transistor BFU520A
BFS17 wideband transistor BFU520A
BFS17A wideband transistor BFU520A
BFS17W wideband transistor BFU550W
BFS505 wideband transistor BFU520W
BFS520 wideband transistor BFU550W
BFS540 wideband transistor BFU550W
BGA2001 wideband amplifier depending application
BGA2002 wideband amplifier depending application
BGA 2011 wideband amplifier depending application
BGA2031 wideband amplifier depending application
BGA 2711 wideband amplifier depending application
BGA2714 wideband amplifier BGA2803
BGA2716 wideband amplifier BGA2866
BGA2748 wideband amplifier BGA2803
BGA2771 wideband amplifier depending application
BGA6289 power amplifier BGA7024
BGM1014 wideband amplifier BGA2869
BLT70 power transistor no NXP replacement
BLT80 power transistor no NXP replacement
BSR56 N-channel FET no NXP replacement
BSR58 N-channel FET no NXP replacement
ON4832 wideband transistor BFU550X
ON5023 wideband transistor BFU520A
PBR951 wideband transistor BFU550A
PMBF4392 N-channel FET no NXP replacement
PMBFJ111 N-channel FET no NXP replacement
PMBFJ112 N-channel FET no NXP replacement
PMBFJ113 N-channel FET no NXP replacement
PMBFJ174 P-channel FET no NXP replacement
PMBFJ175 P-channel FET no NXP replacement
PMBFJ176 P-channel FET no NXP replacement
PRF949 wideband transistor BFU550W
PRF957 wideband transistor BFU550W

69NXP Semiconductors RF Manual 20th edition
Cross-references
& replacements

70 NXP Semiconductors RF Manual 20th edition
6.1 Packing quantities per package with relevant ordering codes
6. Packing and packaging information
Package Package dimentions (L x W x H, mm) Packing quantity Product
12NC ending
Packing method
SOD323 2.1x1.25x0.9 3000 115 PM T+R 3K 115 SOD323 1.25X1.7
10000 135 PM T+R 10K 135 SOD323 1.25X1.7
SOD523 1.6x0.83x0.63
3000 115 PM T+R 3K 115 SOD523 0.83X1.6
10000 135 PM T+R 10K 135 SOD523 0.83X1.6
20000 335 PM T+R 20K 335 SOD523 0.83X1.6
SOD882 1x0.6x0.37 10000 315 PM T+R 10K 315 SOD882D 0.6X1CC
SOT1092 6x6x0.82 4000 518 PM T+R 330X16 HVQFN 6X6 DP
SOT1189 1.6x1.6x0.5 4000 115 PM T+R 180X8 XSON 1.6X1.6
SOT1209 2x1.3x0.35 5000 147 PM T+R 5K 147 XSON 1.3x2.00
SOT1226 0.8x0.8x0.33 10000 147 TR 10K 147 Q2 SOT1226C
SOT1230 1.1x0.9x0.47 5000 115 PM T+R 5K 115 SOT1230 0.9X1.1
SOT1232 1.1x0.7x0.37 5000 115 PM T+R 5K 115 SOT1232 1.1X0.7
SOT1234 1.4x1.2x0.32 5000 147 TR 5K 147 Q2 SOT1234-1
SOT1260 1.5x1.5x0.33 5000 147 TR 5K 147 Q2 SOT1260-1
SOT1261 2x2x0.3 5000 147 TR 5K 147 Q2 SOT1261-1
SOT1301 8x8x1.3 2000 518 TR 330X16 8.40x8.40 518 Q1
SOT1327 2x2x0.75 2000 115 PM T+R 180X8 HWSON 2.0X2.0
SOT1359 5x5x0.72 6000 518 TR 330X12 HVQFN 5X5 DP 518
SOT143 2.9x1.25x0.9 3000 215 PM T+R 3K 215 SOT143 1.25X2.9
10000 235 PM T+R 10K 235 SOT143 1.25X2.9
SOT1431 5x5x0.72 6000 518 TR 6K 518 Q1 SOT1431-1 DP
SOT1436 1.7x2x0.33 15000 128 TR 15K 128 Q2 SOT1436-1
5000 147 TR 5K 147 Q2 SOT1436-1
SOT223 6.5x3.5x1.6 1000 115 PM T+R 1K 115 SOT223 3.5X6.66
4000 135 PM T+R 4K 135 SOT223 3.5X6.66
SOT23 2.9x1.3x1.1 3000 215 PM T+R 3K 215 SOT23 1.3X2.9
10000 235 PM T+R 10K 235 SOT23 1.3X2.9
SOT323 2.1x1.25x0.9 3000 115 PM T+R 3K 115 SOT323 1.25X2.1
10000 135 PM T+R 10K 135 SOT323 1.25X2.1
SOT343 2.1x1.25x0.9 3000 115 PM T+R 3K 115 SOT343 1.25X2.1
10000 135 PM T+R 10K 135 SOT343 1.25X2.1
SOT363 2.1x1.25x0.9 3000 115 PM T+R 3K 115 SOT363 1.25X2
10000 135 PM T+R 10K 135 SOT363 1.25X2
SOT416 1.6x0.8x0.75 3000 115 PM T+R 3K 115 SOT416 0.8X1.6
SOT616 4x4x.085
1500 115 PM T+R 180X12 HVQFN 4X4
6000 118 PM T+R 330X12 HVQFN 4X4
490 111 PM 1 TRAY JEDEC HVQFN (S4)
6000 518 PM T+R 330X12 HVQFN 4X4 DP
2450 557 PM 5 TRAY JEDEC HVQFN (S4) DP
SOT617 5x5x0.85 1500 115 PM T+R 180X12 HVQFN 5X5
SOT618 6x6x0.9 4000 518 PM T+R 330X16 HVQFN 6X6 DP
SOT619 7x7x0.85 2000 518 PM T+R 330X16 HVQFN 7X7 DP
SOT650 35x35x2.67 6000 118 PM T+R 330X12 HVSON 3X3
SOT662 5x5x0.85 6000 118 PM T+R 330X12 HVQFN 5X5
1000 115 PM REEL 180X12 HVQFN (S5)
SOT753 2.75x1x0.95 3000 125 PM T+R 3K 125 SOT753 1X2.75
SOT763 3.5x2.5x0.85 6000 135 PM T+R 330X12 DHVQFN 2.5X3.5
3000 115 PM T+R 180X12 DHVQFN 2.5X3.5
SOT786 4.9x3.9x1.5 2500 518 PM T+R 330X12 HSO 3.9X4.9 DP
SOT883 1x0.6x0.34 10000 225 PM T+R 10K 225 SOT883C 0.6X1CC
SOT886 1.45x1x0.5 5000 125 PM T+R 5K 125 SOT886 1.45X1 CC
SOT89 4.5x2.5x1.6 1000 115 PM T+R 1K 115 SOT89 2.5X4.5
4000 135 PM T+R 4K 135 SOT89 2.5X4.5
SOT891 1x1x0.5 5000 132 PM REEL 5K 132 SOT891 CC HMB
SOT908 3x3x0.85 6000 118 PM T+R 330X12 HVSON 3X3
PM: packing method, T+R: tape and reel, TR: tray, DP: dry pack

71NXP Semiconductors RF Manual 20th edition
Packing and
packaging information
Marking code Type Package
A1 BA591 SOD323
7BA891 SOD523
1001 0010 BAP142LX SOD882
K4 BAP50-02 SOD523
A8 BAP50-03 SOD323
4L% BAP50-04 SOT23
6W% BAP50-04W SOT323
1C% BAP50-05 SOT23
W4% BAP50-05W SOT323
1001 0011 BAP50LX SOD882
K1 BAP51-02 SOD523
A5 BAP51-03 SOD323
W6% BAP51-04W SOT323
%1W BAP51- 05W SOT323
W7% BAP51-06W SOT323
1001 0011 BAP51LX SOD882
1111 1101 BAP55LX SOD882
SBAP64-02 SOD523
A3 BAP64-03 SOD323
4K% BAP64-04 SOT23
4W% BAP64-04W SOT323
5K% BAP64-05 SOT23
5W% BAP64-05W SOT323
6K% BAP64-06 SOT23
V4% BAP64-06W SOT323
1111 1111 BAP64LX SOD882
A1 BAP64Q SOT753
K6 BAP65-02 SOD523
D3 BAP65-03 SOD323
7K% BAP65-05 SOT23
V6% BAP65-05W SOT323
1001 0110 BAP65LX SOD882
K8 BAP70-02 SOD523
A9 BAP70-03 SOD323
1N% BAP70-04W SOT323
8K% BAP70-05 SOT23
N9% BAP70AM SOT363
A2 BAP70Q SOT753
10% BAT18 SOT23
P1 BB131 SOD323
P5 BB135 SOD323
ZBB145B SOD523
PF BB156 SOD323
4H BB170 SOD323
4J BB171 SOD323
4K BB172 SOD323
Marking code Type Package
CE BB173 SOD523
CF BB174 SOD523
CH BB175 SOD523
NBB181 SOD523
SC% BB201 SOT23
L2 BB202 SOD523
%13 BB207 SOT23
A1 BB208-02 SOD523
A2 BB208-03 SOD323
S2% BBY40 SOT23
S6% BF510 SOT23
S7% BF511 SOT23
S8% BF512 SOT23
S9% BF513 SOT23
20% BF545A SOT23
21% BF545B SOT23
22% BF545C SOT23
24% BF556A SOT23
28% BF861A SOT23
29% BF861B SOT23
30% BF861C SOT23
2A% BF862 SOT23
BFG35 BFG35 SOT223
FF BFQ18A SOT89
M1% BFR30 SOT23
M2% BFR31 SOT23
N6% BFS25A SOT323
V1% BFT25 SOT23
34% BFT25A SOT23
M3% BFT46 SOT23
W1% BFT92 SOT23
W1% BFT92W SOT323
X1% BFT93 SOT23
X1% BFT93W SOT323
%TA BFU520 SOT143
HZ% BFU520A SOT23
ZA% BFU520W SOT323
%TE BFU520X SOT143
%TJ BFU520XR SOT143
WB% BFU520Y SOT363
%TB BFU530 SOT143
HY% BFU530A SOT23
ZB% BFU530W SOT323
%TF BFU530X SOT143
%TK BFU530XR SOT143
%TC BFU550 SOT143
Marking code Type Package
HW% BFU550A SOT23
ZC% BFU550W SOT323
%TG BFU550X SOT143
%TL BFU550XR SOT143
BFU580G BFU580G SOT223
S58 BFU580Q SOT89
BFU590G BFU590G SOT223
S59 BFU590Q SOT89
D1% BFU610F SOT343
D2% BFU630F SOT343
D3% BFU660F SOT343
ZA% BFU668F SOT343
D4% BFU690F SOT343
D5% BFU710F SOT343
B7% BFU725F/N1 SOT343
D6% BFU730F SOT343
ZD BFU730LX SOT883
D7% BFU760F SOT343
ZB% BFU768F SOT343
D8% BFU790F SOT343
F1% BFU910F SOT343
A6% BGA2012 SOT363
%E7 BGA2800 SOT363
%E8 BGA2801 SOT363
MA% BGA2802 SOT363
MB% BGA2803 SOT363
%E9 BGA2815 SOT363
LS% BGA2817 SOT363
TA% BGA2818 SOT363
MC% BGA2851 SOT363
%ED BGA2866 SOT363
LP% BGA2867 SOT363
MD% BGA2869 SOT363
YC% BGA2870 SOT363
LR% BGA2874 SOT363
%6W BGA3012 SOT89
%6X BGA3015 SOT89
%6Y BGA3018 SOT89
BGA3021 BGA3021 SOT786
BGA3022 BGA3022 SOT786
BGA3023 BGA3023 SOT786
3031 BGA3031 SOT662
3131 BGA3131 SOT662
6130 BGA6130 SOT908
%4A BGA6489 SOT89
%5A BGA6589 SOT89
6.2 Marking codes
In general, device marking includes the part number, some manufacturing information, and the NXP logo. If packages are too
small for the full-length part number, a shorter, coded part number (called the "marking code") is used instead. To save space,
the marking code uses a % symbol in place of the manufacturing-site code. The full-length part number is always printed on the
packing label on the box or bulk-pack in which the devices are supplied.
t = made in Malaysia
W = made in China

72 NXP Semiconductors RF Manual 20th edition
Marking code Type Package
%6K BGA7024 SOT89
%6L BGA7027 SOT89
7124 BGA7124 SOT908
7127 BGA7127 SOT908
7130 BGA7130 SOT908
7204 BGA7204 SOT617
7210 BGA7210 SOT617
7350 BGA7350 SOT617
7351 BGA7351 SOT617
458 BGF8458 SOT1436
C4% BGM1013 SOT363
24 BGS8324 SOT1261
58 BGS8358 SOT1260
24 BGS8424 SOT1260
58 BGS8458 SOT1234
UBGS8C5 SOT1232
PBGS8H2 SOT1232
RBGS8H5 SOT1232
JBGS8L2 SOT1232
SBGS8L5 SOT1232
NBGS8M2 SOT1232
TBGS8U5 SOT1232
D1 BGU6005/N2 SOT886
WBGU6009/N2 SOT1230
1A BGU6101 SOT1209
1B BGU6102 SOT1209
1C BGU6104 SOT1209
B3 BGU7003 SOT891
UW BGU7003W SOT886
UY BGU7004 SOT886
AC BGU7005 SOT886
D1 BGU7005/Z/N2 SOT886
B6 BGU7007 SOT886
B7 BGU7008 SOT886
SC% BGU7031 SOT363
SD% BGU7032 SOT363
SE% BGU7033 SOT363
%VA BGU7041 SOT363
%VB BGU7042 SOT363
Marking code Type Package
LJ% BGU7044 SOT363
LK% BGU7045 SOT363
BGU7060 BGU7060 SOT1301
BGU7061 BGU7061 SOT1301
BGU7062N2 BGU7062N2 SOT1301
BGU7063 BGU7063 SOT1301
BGU7073 BGU7073 SOT1301
BGU7075 BGU7075 SOT1301
BGU7078 BGU7078 SOT1301
224 BGU7224 SOT118 9
258 BGU7258 SOT118 9
UZ BGU8007 SOT886
ABGU8009 SOT1230
BBGU8010 SOT1230
CBGU8011 SOT1230
ABGU8019 SOT1232
GBGU8019W/N2 SOT1230
BBGU8020 SOT1232
51 BGU8051 SOT1327
52 BGU8052 SOT1327
53 BGU8053 SOT1327
8061 BGU8061 SOT650
8062 BGU8062 SOT650
8063 BGU8063 SOT650
GBGU8103 SOT1232
ABGU8309 SOT1226
u8821 BGU8821 SOT1431
u8822 BGU8822 SOT1431
u8823 BGU8823 SOT1431
FBGU8H1 SOT1232
DBGU8L1 SOT1232
EBGU8M1 SOT1232
7100 BGX7100HN/1 SOT616
7101 BGX7101HN/1 SOT616
BGX7220 BGX7220HN/1 SOT1092
BGX7221 BGX7221HN/1 SOT1092
BLT50 BLT50 SOT223
BLT81 BLT81 SOT223
B5% BSR12 SOT23
Marking code Type Package
M5% BSR57 SOT23
BTS5101M BTS5101M SOT1301
ON5046 ON5046 SOT223
%7N ON5087 SOT343
%6N ON5088 SOT343
%8N ON5089 SOT343
ZE% ON5096 SOT343
IT12P ON7800 SOT662
8077 ON8077 SOT1359
V0% PBR941 SOT23
LB% PBR941B SOT23
%6J PMBF4391 SOT23
%6g PMBF4393 SOT23
38% PMBFJ108 SOT23
39% PMBFJ109 SOT23
40% PMBFJ110 SOT23
%6Y PMBFJ177 SOT23
48% PMBFJ308 SOT23
49% PMBFJ309 SOT23
V0% PRF947 SOT323
1003 TFF1003HN/N1 SOT616
1007 TFF1007HN/N1 SOT616
T1012 TFF1012HN/N1 SOT763
T1013 TFF1013HN/N1 SOT763
T1014 TFF1014HN/N1 SOT763
T1015 TFF1015HN/N1 SOT763
T1017 TFF1017HN/N1 SOT763
T1018 TFF1018HN/N1 SOT763
T1024 TFF1024HN/N1 SOT763
T1025 TFF1025HN/N1 SOT763
T1044 TFF1044HN/N1 SOT1359
T086 TFF11086HN/N1 SOT616
T092 TFF11092HN/N1 SOT616
T096 TFF11096HN/N1 SOT616
T101 TFF11101HN/N1 SOT616
T139 TFF11139HN/N1 SOT616
T142 TFF11142HN/N1 SOT616
T145 TFF11145HN/N1 SOT616

73NXP Semiconductors RF Manual 20th edition
Product index
Type New name Chapter
BA591 -3.3.3
BA891 -3.3.3
BAP142LX -3.3.2
BAP50-02 -3.3.2
BAP50-03 -3.3.2
BAP50-04 -3.3.2
BAP50-04W -3.3.2
BAP50-05 -3.3.2
BAP50-05W -3.3.2
BAP50LX -3.3.2
BAP51-02 -3.3.2
BAP51-03 -3.3.2
BAP51-04W -3.3.2
BAP51-05W -3.3.2
BAP51-06W -3.3.2
BAP51LX -3.3.2
BAP55LX -3.3.2
BAP64-02 -3.3.2
BAP64-03 -3.3.2
BAP64-04 -3.3.2
BAP64-04W -3.3.2
BAP64-05 -3.3.2
BAP64-05W -3.3.2
BAP64-06 -3.3.2
BAP64-06W -3.3.2
BAP64LX -3.3.2
BAP64Q -3.3.2
BAP65-02 -3.3.2
BAP65-03 -3.3.2
BAP65-05 -3.3.2
BAP65-05W -3.3.2
BAP65LX -3.3.2
BAP70-02 -3.3.2
BAP70-03 -3.3.2
BAP70-04W -3.3.2
BAP70-05 -3.3.2
BAP70AM -3.3.2
BAP70Q -3.3.2
BAT18 -3.3.3
BB131 -3.3.1
BB135 -3.3.1
BB145B -3.3.1
BB156 -3.3.1
BB170 -3.3.1
Type New name Chapter
BB171 -3.3.1
BB172 -3.3.1
BB173 -3.3.1
BB174 -3.3.1
BB175 -3.3.1
BB181 -3.3.1
BB201 -3.3.1
BB202 -3.3.1
BB207 -3.3.1
BB208-02 -3.3.1
BB208-03 -3.3.1
BBY40 -3.3.1
BF1105R -3.4.2
BF1107 -3.4.2
BF1108 -3.4.2
BF1108R -3.4.2
BF510 -3.4.2
BF511 -3.4.2
BF512 -3.4.2
BF513 -3.4.2
BF545A -3.4.2
BF545B -3.4.2
BF545C -3.4.2
BF556A -3.4.2
BF861A -3.4.2
BF861B -3.4.2
BF861C -3.4.2
BF862 -3.4.2
BF992 -3.4.2
BF994S -3.4.2
BF996S -3.4.2
BFG35 -3.2.1
BFQ18A -3.2.1
BFR30 -3.4.2
BFR31 -3.4.2
BFS25A -3.2.1
BFT25 -3.2.1
BFT46 -3.4.2
BFT92 -3.2.1
BFT92W -3.2.1
BFT93 -3.2.1
BFT93W -3.2.1
BFU520 -3.2.1
BFU520A -3.2.1
Type New name Chapter
BFU520W -3.2.1
BFU520X -3.2.1
BFU520XR -3.2.1
BFU520Y -3.2.1
BFU530 -3.2.1
BFU530A -3. 2.1
BFU530W -3.2.1
BFU530X -3.2.1
BFU530XR -3.2.1
BFU550 -3. 2.1
BFU550A -3.2.1
BFU550W -3.2.1
BFU550X -3.2.1
BFU550XR -3.2.1
BFU580G -3.2.1
BFU580Q -3.2.1
BFU590G -3.2.1
BFU590Q -3. 2.1
BFU610F -3.2.1
BFU630F -3.2.1
BFU660F -3.2.1
BFU690F -3.2.1
BFU710F -3. 2.1
BFU725F/N1 -3.2.1
BFU730F -3.2.1
BFU730LX -3.2.1
BFU760F -3.2.1
BFU768F -3.2.1
BFU790F -3.2.1
BFU910F -3.2.1
BGA2012 -3.1.1
BGA2031/1 -3.1.3
BGA2800 -3.1.2
BGA2801 -3.1.2
BGA2802 -3.1.2
BGA2803 -3.1.2
BGA2815 -3.1. 2
BGA2817 -3.1.2
BGA2818 -3.1.2
BGA2851 -3.1. 2
BGA2866 -3.1.2
BGA2867 -3.1.2
BGA2869 -3.1.2
BGA2870 -3.1.2
7. Product index

74 NXP Semiconductors RF Manual 20th edition
Type New name Chapter
BGA2874 -3.1.2
BGA3012 -3.1.2
BGA3015 -3.1.2
BGA3018 -3.1.2
BGA3021 -3.1.2
BGA3022 -3.1. 2
BGA3023 -3.1.2
BGA3031 -3.1.3
BGA3131 -3.1.3
BGA6130 -3.1.4
BGA6489 -3.1.4
BGA6589 -3.1.4
BGA7024 -3.1.4
BGA7027 -3.1.4
BGA7124 -3.1.4
BGA7127 -3.1.4
BGA7130 -3.1.4
BGA7204 -3.1.3
BGA7210 BTS6001A 3.1.3
BGA7350 -3.1.3
BGA7351 -3.1.3
BGF8458 WLAN7001C 3.1.1
BGM1013 -3.1.2
BGS8324 WLAN3001H 3.1.1
BGS8358 WLAN3001C 3.1.1
BGS8424 WLAN3101H 3.1.1
BGS8458 WL AN3101C 3.1.1
BGS8L2 LTE30 01L 3.1.1
BGS8M2 LTE3001M 3.1.1
BGS8H2 LTE3001H 3.1.1
BGS8L5 LTE3301L 3.1.1
BGS8H5 LTE3301H 3.1.1
BGS8C5 LTE3301C 3.1.1
BGS8U5 LTE3301U 3.1.1
-LTE3401L 3.1.1
BGU6005 GPS1001M 3.1.1
BGU6009 GPS1002M 3.1.1
BGU6101 -3.1.1
Type New name Chapter
BGU6102 -3.1.1
BGU6104 -3.1.1
BGU7003 -3.1.1
BGU7003W -3.1.1
BGU7004 GPS1103M 3.1.1
BGU7005 GPS1101M 3.1.1
BGU7007 GPS1102M 3.1.1
BGU7008 GPS110 4M 3.1.1
BGU7031 -3.1.1
BGU7032 -3.1.1
BGU7033 -3.1.1
BGU7041 -3.1.1
BGU7042 -3.1.1
BGU7044 -3.1.1
BGU7045 -3.1.1
BGU7060 -3.1.1
BGU7061 -3.1.1
BGU7062N2 -3.1.1
BGU7063 -3.1.1
BGU7073 BTS5001M 3.1.1
BGU7075 BTS5001H 3.1.1
BGU7078 BTS5002M 3.1.1
BGU7224 -3.1.1
BGU7258 -3.1.1
BGU8004 -3.1.1
BGU8006 -3.1.1
BGU8007 -3.1.1
BGU8009 GPS1201M 3.1.1
BGU8010 -3.1.1
BGU8011 -3.1.1
BGU8019 GPS1202M 3.1.1
BGU8103 GPS1301M 3.1.1
BGU8309 GPS1401M 3.1.1
BGU8051 BTS1001L 3.1.1
BGU8052 BTS1001M 3.1.1
BGU8053 BTS1001H 3.1.1
BGU8061 BTS3001L 3.1.1
BGU8062 BTS3001M 3.1.1
Type New name Chapter
BGU8063 BTS3001H 3.1.1
BGU8L1 LTE10 01L 3.1.1
BGU8M1 LTE10 01M 3.1.1
BGU8H1 LTE10 01H 3.1.1
BGX7100 -3.1.5
BGX7101 BTS8001A 3.1.5
BGX7220 -3.1.5
BGX7221 -3.1.5
BLT50 -3. 2.1
BLT81 -3.2.1
PBR941 -3.2.1
PMBF4391 -3.4.2
PMBF4393 -3.4.2
PMBFJ108 -3.4.2
PMBFJ109 -3.4.2
PMBFJ110 -3.4.2
PMBFJ177 -3.4.2
PMBFJ308 -3.4.2
PMBFJ309 -3.4.2
PRF947 -3.2.1
TFF1003HN -3.1.5
TFF1007HN -3.1.5
TFF1012HN -3.1.5
TFF1013HN -3.1.5
TFF1014HN -3.1.5
TFF1015HN -3.1.5
TFF1017HN -3.1.5
TFF1018HN -3.1.5
TFF1024HN -3.1.5
TFF1044HN -3.1.5
TFF11088HN -3.1.5
TFF11092HN -3.1.5
TFF11096HN -3.1.5
TFF11101HN -3.1.5
TFF11132HN -3.1.5
TFF11139HN -3.1.5
TFF11142HN -3.1.5
TFF11145HN -3.1.5

75NXP Semiconductors RF Manual 20th edition
Product index

78 NXP Semiconductors RF Manual 20th edition
www.nxp.comwww.nxp.com
© 2017 NXP Semiconductors N.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner. The information presented in this document does not form part of any quotation or contract,
is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: May 2017
Document order number: RFSAS20EDRM REV 0
Printed in the Netherlands
Products related to this Datasheet
SIGE:C LOW-NOISE AMPLIFIER MMIC
IC RF AMP
IC RF AMP
IC RF AMP
IC RF AMP
IC RF AMP
IC RF AMP
IC RF AMP
SIGE:C LOW-NOISE AMPLIFIER MMIC
SIGE:C LOW-NOISE AMPLIFIER MMIC