IS61,64WV25616(A,B)L(L,S) Datasheet by ISSI, Integrated Silicon Solution Inc
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Integrated Silicon Solution, Inc. — www.issi.com
1
Rev. G
07/15/2010
Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
IS61WV25616ALL/ALS
IS61WV25616BLL/BLS
IS64WV25616BLL/BLS
FEATURES
HIGH SPEED: (IS61/64WV25616ALL/BLL)
• High-speed access time: 8, 10, 20 ns
• Low Active Power: 85 mW (typical)
• Low Standby Power: 7 mW (typical)
CMOS standby
LOW POWER: (IS61/64WV25616ALS/BLS)
• High-speed access time: 25, 35, 45 ns
• Low Active Power: 35 mW (typical)
• Low Standby Power: 0.6 mW (typical)
CMOS standby
• Single power supply
— VDD 1.65V to 2.2V (IS61WV25616Axx)
— VDD 2.4V to 3.6V (IS61/64WV25616Bxx)
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial and Automotive temperature support
• Lead-free available
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
DESCRIPTION
The ISSI IS61WV25616Axx/Bxx and IS64WV25616Bxx
are high-speed, 4,194,304-bit static RAMs organized as
262,144 words by 16 bits. It is fabricated using ISSI's high-
performance CMOS technology. This highly reliable pro-
cess coupled with innovative circuit design techniques,
yields high-performance and low power consumption de-
vices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS61WV25616Axx/Bxx and IS64WV25616Bxx are
packaged in the JEDEC standard 44-pin TSOP Type II and
48-pin Mini BGA (6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A17
CE
OE
WE
256K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
UB
LB
JULY 2010
7 7 7
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_I_7I__I__I_7I__I__I7_I7_I__I__I__I7E_I77I__I__I_7I_7I_E_I77I_
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Integrated Silicon Solution, Inc. — www.issi.com
Rev. G
07/15/2010
IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
TRUTH TABLE
I/O PIN
Mode WEWE
WEWE
WE CECE
CECE
CE OEOE
OEOE
OE LBLB
LBLB
LB UBUB
UBUB
UB I/O0-I/O7 I/O8-I/O15 VDD Current
Not Selected X H X X X High-Z High-Z ISB1, ISB2
Output Disabled H L H X X High-Z High-Z ICC
X L X H H High-Z High-Z
Read H L L L H DOUT High-Z ICC
H L L H L High-Z DOUT
HLLLL DOUT DOUT
Write L L X L H DIN High-Z ICC
L L X H L High-Z DIN
LLXLL DIN DIN
PIN DESCRIPTIONS
A0-A17 Address Inputs
I/O0-I/O15 Data Inputs/Outputs
CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input
LB Lower-byte Control (I/O0-I/O7)
UB Upper-byte Control (I/O8-I/O15)
NC No Connection
VDD Power
GND Ground
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12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A0
A1
A2
A3
A4
CE
I/O0
I/O1
I/O2
I/O3
VDD
GND
I/O4
I/O5
I/O6
I/O7
WE
A5
A6
A7
A8
A9
A17
A16
A15
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
VDD
I/O11
I/O10
I/O9
I/O8
NC
A14
A13
A12
A11
A10
PIN CONFIGURATIONS
44-Pin TSOP (Type II) and SOJ
*SOJ package under evaluation.
00000000
00000000
00000000
00000000
00000000
00000000
_.__.__.__.__.__.__.__.__.__.__._
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IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
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33
32
31
30
29
28
27
26
25
24
23
12 13 14 15 16 17 18 19 20 21 22
44 43 42 41 40 39 38 37 36 35 34
CE
I/O0
I/O1
I/O2
I/O3
VDD
GND
I/O4
I/O5
I/O6
I/O7
I/O15
I/O14
I/O13
I/O12
GND
VDD
I/O11
I/O10
I/O9
I/O8
NC
TOP VIEW
WE
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A17
A16
A15
A14
A13
A12
A11
A10
OE
UB
LB
1 2 3 4 5 6
A
B
C
D
E
F
G
H
LB OE A0 A1 A2 N/C
I/O
8
UB A3 A4 CE I/O
0
I/O
9
I/O
10
A5 A6 I/O
1
I/O
2
GND I/O
11
A17 A7 I/O
3
V
DD
V
DD
I/O
12
NC A16 I/O
4
GND
I/O
14
I/O
13
A14 A15 I/O
5
I/O
6
I/O
15
NC A12 A13 WE I/O
7
NC A8 A9 A10 A11 NC
48-Pin mini BGA (6mm x 8mm)
PIN CONFIGURATIONS
44-Pin LQFP
PIN DESCRIPTIONS
A0-A17 Address Inputs
I/O0-I/O15 Data Inputs/Outputs
CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input
LB Lower-byte Control (I/O0-I/O7)
UB Upper-byte Control (I/O8-I/O15)
NC No Connection
VDD Power
GND Ground
*LQFP package under evaluation.
= 3.3V,
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Integrated Silicon Solution, Inc. — www.issi.com
Rev. G
07/15/2010
IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 2.4V-3.6V
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VDD = Min., IOH = –1.0 mA 1.8 — V
VOL Output LOW Voltage VDD = Min., IOL = 1.0 mA — 0.4 V
VIH Input HIGH Voltage 2.0 VDD + 0.3 V
VIL Input LOW Voltage(1) –0.3 0.8 V
ILI Input Leakage GND ≤ VIN ≤ VDD –1 1 µA
ILO Output Leakage GND ≤ VOUT ≤ VDD, Outputs Disabled –1 1 µA
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width < 10 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 3.3V + 5%
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VDD = Min., IOH = –4.0 mA 2.4 — V
VOL Output LOW Voltage VDD = Min., IOL = 8.0 mA — 0.4 V
VIH Input HIGH Voltage 2 VDD + 0.3 V
VIL Input LOW Voltage(1) –0.3 0.8 V
ILI Input Leakage GND ≤ VIN ≤ VDD –1 1 µA
ILO Output Leakage GND ≤ VOUT ≤ VDD, Outputs Disabled –1 1 µA
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width < 10 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 1.65V-2.2V
Symbol Parameter Test Conditions VDD Min. Max. Unit
VOH Output HIGH Voltage IOH = -0.1 mA 1.65-2.2V 1.4 — V
VOL Output LOW Voltage IOL = 0.1 mA 1.65-2.2V — 0.2 V
VIH Input HIGH Voltage 1.65-2.2V 1.4 VDD + 0.2 V
VIL(1) Input LOW Voltage 1.65-2.2V –0.2 0.4 V
ILI Input Leakage GND ≤ VIN ≤ VDD –1 1 µA
ILO Output Leakage GND ≤ VOUT ≤ VDD, Outputs Disabled –1 1 µA
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width < 10 ns). Not 100% tested.
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IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
AC TEST LOADS
Figure 1.
319 Ω
5 pF
Including
jig and
scope
353 Ω
OUTPUT
3.3V
Figure 2.
Z
O
= 50Ω
1.5V
50Ω
OUTPUT
30 pF
Including
jig and
scope
AC TEST CONDITIONS
Parameter Unit Unit Unit
(2.4V-3.6V) (3.3V + 10%) (1.65V-2.2V)
Input Pulse Level 0V to 3V 0V to 3V 0V to 1.8V
Input Rise and Fall Times 1V/ ns 1V/ ns 1V/ ns
Input and Output Timing 1.5V 1.5V 0.9V
and Reference Level (VRef)
Output Load See Figures 1 and 2 See Figures 1 and 2 See Figures 1 and 2
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Rev. G
07/15/2010
IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter Value Unit
VTERM Terminal Voltage with Respect to GND –0.5 to VDD + 0.5 V
VDD VDD Relates to GND –0.3 to 4.0 V
TSTG Storage Temperature –65 to +150 °C
PTPower Dissipation 1.0 W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 6 pF
CI/O Input/Output Capacitance VOUT = 0V 8 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
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IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
OPERATING RANGE (VDD) (IS61WV25616BLL)(1)
Range Ambient Temperature VDD (8 nS)1VDD (10 nS)1
Commercial 0°C to +70°C 3.3V + 5% 2.4V-3.6V
Industrial –40°C to +85°C 3.3V + 5% 2.4V-3.6V
Note:
1. When operated in the range of 2.4V-3.6V, the device meets 10ns. When operated in the
range of 3.3V + 5%, the device meets 8ns.
OPERATING RANGE (VDD) (IS64WV25616BLL)
Range Ambient Temperature VDD (10 nS)
Automotive –40°C to +125°C 2.4V-3.6V
HIGH SPEED (IS61WV25616ALL/BLL)
OPERATING RANGE (VDD) (IS61WV25616ALL)
Range Ambient Temperature VDD Speed
Commercial 0°C to +70°C 1.65V-2.2V 20ns
Industrial –40°C to +85°C 1.65V-2.2V 20ns
Automotive –40°C to +125°C 1.65V-2.2V 20ns
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-8 -10 -20
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Unit
ICC VDD Dynamic Operating VDD = Max., Com. — 50 — 40 — 35 mA
Supply Current IOUT = 0 mA, f = fMAX Ind. — 55 — 45 — 40
Auto. — — — 65 — 60
typ.
(2)
25
ICC1 Operating VDD = Max., Com. — 35 — 35 — 30 mA
Supply Current IOUT = 0 mA, f = 0 Ind. — 40 — 40 — 40
Auto. — — — 60 — 60
ISB1TTL Standby Current VDD = Max., Com. — 10 — 10 — 10 mA
(TTL Inputs) VIN = VIH or VIL Ind. — 15 — 15 — 15
CE ≥ VIH, f = 0 Auto. — — — 30 — 30
ISB2CMOS Standby VDD = Max., Com. — 8 — 8 — 8 mA
Current (CMOS Inputs) CE ≥ VDD – 0.2V, Ind. — 9 — 9 — 9
VIN ≥ VDD – 0.2V, or Auto. — — — 20 — 20
VIN ≤ 0.2V
, f = 0 typ.
(2)
2
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.0V, TA = 25oC and not 100% tested.
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Integrated Silicon Solution, Inc. — www.issi.com
Rev. G
07/15/2010
IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-25 -35 -45
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Unit
ICC VDD Dynamic Operating VDD = Max., Com. — 20 — 20 — 15 mA
Supply Current IOUT = 0 mA, f = fMAX Ind. — 25 — 25 — 20
Auto. — 50 — 50 — 40
typ.
(2)
11
ICC1 Operating VDD = Max., Com. — 10 — 10 — 10 mA
Supply Current IOUT = 0 mA, f = 0 Ind. — 12 — 12 — 12
Auto. — 20 — 20 — 20
ISB1TTL Standby Current VDD = Max., Com. — 5 — 5 — 5 mA
(TTL Inputs) VIN = VIH or VIL Ind. — 7 — 7 — 7
CE ≥ VIH, f = 0 Auto. — 10 — 10 — 10
ISB2CMOS Standby VDD = Max., Com. — 1 — 1 — 1 mA
Current (CMOS Inputs) CE ≥ VDD – 0.2V, Ind. — 2 — 2 — 2
VIN ≥ VDD – 0.2V, or Auto. — 10 — 10 — 10
VIN ≤ 0.2V
, f = 0 typ.
(2)
0.2
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.0V, TA = 25oC and not 100% tested.
OPERATING RANGE (VDD) (IS61WV25616BLS)
Range Ambient Temperature VDD (25 nS)
Commercial 0°C to +70°C 2.4V-3.6V
Industrial –40°C to +85°C 2.4V-3.6V
LOW POWER (IS61WV25616ALS/BLS)
OPERATING RANGE (VDD) (IS61WV25616ALS)
Range Ambient Temperature VDD Speed
Commercial 0°C to +70°C 1.65V-2.2V 45ns
Industrial –40°C to +85°C 1.65V-2.2V 45ns
Automotive –40°C to +125°C 1.65V-2.2V 45ns
OPERATING RANGE (VDD) (IS64WV25616BLS)
Range Ambient Temperature VDD (35 nS)
Automotive –40°C to +125°C 2.4V-3.6V
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IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-8 -10
Symbol Parameter Min. Max. Min. Max. Unit
tRC Read Cycle Time 8 — 10 — ns
tAA Address Access Time — 8 — 10 ns
tOHA Output Hold Time 2.0 — 2.0 — ns
tACE CE Access Time — 8 — 10 ns
tDOE OE Access Time — 4.5 — 4.5 ns
tHZOE
(2)
OE to High-Z Output — 3 — 4 ns
tLZOE
(2)
OE to Low-Z Output 0 — 0 — ns
tHZCE
(2
CE to High-Z Output 0 3 0 4 ns
tLZCE
(2)
CE to Low-Z Output 3 — 3 — ns
tBA LB, UB Access Time — 5.5 — 6.5 ns
tHZB
(2)
LB, UB to High-Z Output 0 3 0 3 ns
tLZB
(2)
LB, UB to Low-Z Output 0 — 0 — ns
tPU Power Up Time 0 — 0 — ns
tPD Power Down Time — 8 — 10 ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to
3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage.
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Rev. G
07/15/2010
IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-20 ns -25 ns -35 ns -45ns
Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Unit
tRC Read Cycle Time 20 — 25 — 35 — 45 — ns
tAA Address Access Time — 20 — 25 — 35 — 45 ns
tOHA Output Hold Time 2.5 — 4 — 4 — 7 — ns
tACE CE Access Time — 20 — 25 — 35 — 45 ns
tDOE OE Access Time — 8 — 12 — 15 — 20 ns
tHZOE
(2)
OE to High-Z Output 0 8 0 8 0 10 0 15 ns
tLZOE
(2)
OE to Low-Z Output 0 — 0 — 0 — 0 — ns
tHZCE
(2
CE to High-Z Output 0 8 0 8 0 10 0 15 ns
tLZCE
(2)
CE to Low-Z Output 3 — 10 — 10 — 15 — ns
tBA LB, UB Access Time — 8 — 25 — 35 — 45 ns
tHZB LB, UB to High-Z Output 0 8 0 8 0 10 0 15 ns
tLZB LB, UB to Low-Z Output 0 — 0 — 0 — 0 — ns
Notes:
1. Test conditions assume signal transition times of 1.5 ns or less, timing reference levels of 1.25V, input pulse levels of 0.4V to
VDD-0.3V and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
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IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
DATA VALID
READ1.eps
PREVIOUS DATA VALID
t
AA
t
OHA
t
OHA
t
RC
D
OUT
ADDRESS
AC WAVEFORMS
READ CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = VIL, UB or LB = VIL)
t
RC
t
OHA
t
AA
t
DOE
t
LZOE
t
ACE
t
LZCE
t
HZOE
HIGH-Z DATA VALID
UB_CEDR2.eps
t
HZB
ADDRESS
OE
CE
LB, UB
DOUT
t
HZCE
t
BA
t
LZB
t
RC
t
PD
I
SB
I
CC
50%
VDD
Supply
Current
50%
t
PU
READ CYCLE NO. 2(1,3)
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE, UB, or LB = VIL.
3. Address is valid prior to or coincident with CE LOW transition.
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Rev. G
07/15/2010
IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)
-8 -10
Symbol Parameter Min. Max. Min. Max. Unit
tWC Write Cycle Time 8 — 10 — ns
tSCE CE to Write End 6.5 — 8 — ns
tAW Address Setup Time 6.5 — 8 — ns
to Write End
tHA Address Hold from Write End 0 — 0 — ns
tSA Address Setup Time 0 — 0 — ns
tPWB LB, UB Valid to End of Write 6.5 — 8 — ns
tPWE1WE Pulse Width 6.5 — 8 — ns
tPWE2WE Pulse Width (OE = LOW) 8.0 — 10 — ns
tSD Data Setup to Write End 5 — 6 — ns
tHD Data Hold from Write End 0 — 0 — ns
tHZWE
(2)
WE LOW to High-Z Output — 3.5 — 5 ns
tLZWE
(2)
WE HIGH to Low-Z Output 2 — 2 — ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to
3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states
to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced
to the rising or falling edge of the signal that terminates the write. Shaded area product in development
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IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range)
-20 ns -25 ns -35 ns -45ns
Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Unit
tWC Write Cycle Time 20 — 25 — 35 — 45 — ns
tSCE CE to Write End 12 — 18 — 25 — 35 — ns
tAW Address Setup Time 12 — 15 — 25 — 35 — ns
to Write End
tHA Address Hold from Write End 0 — 0 — 0 — 0 — ns
tSA Address Setup Time 0 — 0 — 0 — 0 — ns
tPWB LB, UB Valid to End of Write 12 — 18 — 30 — 35 — ns
tPWE1WE Pulse Width (OE = HIGH) 12 — 18 — 30 — 35 — ns
tPWE2WE Pulse Width (OE = LOW) 17 — 20 — 30 — 35 — ns
tSD Data Setup to Write End 9 — 12 — 15 — 20 — ns
tHD Data Hold from Write End 0 — 0 — 0 — 0 — ns
tHZWE
(3)
WE LOW to High-Z Output — 9 — 12 — 20 — 20 ns
tLZWE
(3)
WE HIGH to Low-Z Output 3 — 5 — 5 — 5 — ns
Notes:
1. Test conditions assume signal transition times of 1.5ns or less, timing reference levels of 1.25V, input pulse levels of 0.4V to
VDD-0.3V and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to
the rising or falling edge of the signal that terminates the write.
14
Integrated Silicon Solution, Inc. — www.issi.com
Rev. G
07/15/2010
IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
WRITE CYCLE NO. 2
(WE Controlled. OE is HIGH During Write Cycle)
(1,2)
DATA UNDEFINED
LOW
t
WC
VALID ADDRESS
t
PWE1
t
AW
t
HA
HIGH-Z
t
PBW
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB, LB
WE
DOUT
DIN
OE
DATA
IN
VALID
t
LZWE
t
SD
UB_CEWR2.eps
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CE and WE inputs and at least one of
the LB and UB inputs being in the LOW state.
2. WRITE = (CE) [ (LB) = (UB) ] (WE).
AC WAVEFORMS
WRITE CYCLE NO. 1
(CE Controlled, OE is HIGH or LOW)
(1 )
DATA UNDEFINED
t
WC
VALID ADDRESS
t
SCE
t
PWE1
t
PWE2
t
AW
t
HA
HIGH-Z
t
PBW
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB, LB
WE
D
OUT
D
IN DATA
IN
VALID
t
LZWE
t
SD
UB_CEWR1.eps
Integrated Silicon Solution, Inc. — www.issi.com
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07/15/2010
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IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
AC WAVEFORMS
WRITE CYCLE NO. 3
(WE Controlled. OE is LOW During Write Cycle)
(1)
DATA UNDEFINED
t
WC
VALID ADDRESS
LOW
LOW
t
PWE2
t
AW
t
HA
HIGH-Z
t
PBW
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB, LB
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
UB_CEWR3.eps
WRITE CYCLE NO. 4
(LB, UB Controlled, Back-to-Back Write)
(1,3)
DATA UNDEFINED
t
WC
ADDRESS 1 ADDRESS 2
t
WC
HIGH-Z
t
PBW
WORD 1
LOW
WORD 2
UB_CEWR4.eps
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB, LB
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
t
PBW
DATA
IN
VALID
t
SD
t
HD
t
SA
t
HA
t
HA
Notes:
1. The internal Write time is defined by the overlap of CE = LOW, UB and/or LB = LOW, and WE = LOW. All signals must be in valid
states to initiate a Write, but any can be deasserted to terminate the Write. The t SA, t HA, t SD, and t HD timing is referenced to the
rising or falling edge of the signal that terminates the Write.
2. Tested with OE HIGH for a minimum of 4 ns before WE = LOW to place the I/O in a HIGH-Z state.
3. WE may be held LOW across many address cycles and the LB, UB pins can be used to control the Write function.
16
Integrated Silicon Solution, Inc. — www.issi.com
Rev. G
07/15/2010
IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
DATA RETENTION WAVEFORM (CE Controlled)
HIGH SPEED (IS61WV25616ALL/BLL)
DATA RETENTION SWITCHING CHARACTERISTICS (2.4V-3.6V)
Symbol Parameter Test Condition Options Min. Typ.
(1)
Max. Unit
VDR VDD for Data Retention See Data Retention Waveform 2.0 — 3.6 V
IDR Data Retention Current VDD = 2.0V, CE ≥ VDD – 0.2V Com. — 2 8 mA
Ind. — — 9
Auto. 15
tSDR Data Retention Setup Time See Data Retention Waveform 0 — — ns
tRDR Recovery Time See Data Retention Waveform tRC ——ns
Note 1: Typical values are measured at V
DD
= 3.0V, T
A
= 25
O
C and not 100% tested.
V
DD
CE ≥ V
DD
- 0.2V
t
SDR
t
RDR
V
DR
CE
GND
Data Retention Mode
DATA RETENTION SWITCHING CHARACTERISTICS (1.65V-2.2V)
Symbol Parameter Test Condition Options Min. Typ.
(1)
Max. Unit
VDR VDD for Data Retention See Data Retention Waveform 1.2 — 3.6 V
IDR Data Retention Current VDD = 1.2V, CE ≥ VDD – 0.2V Com. — 5 10 mA
Ind. — — 15
tSDR Data Retention Setup Time See Data Retention Waveform 0 — — ns
tRDR Recovery Time See Data Retention Waveform tRC ——ns
Note 1: Typical values are measured at V
DD
= 1.8V, T
A
= 25
O
C and not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com
17
Rev. G
07/15/2010
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9
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IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
DATA RETENTION WAVEFORM (CE Controlled)
LOW POWER (IS61WV25616ALS/BLS)
DATA RETENTION SWITCHING CHARACTERISTICS (2.4V-3.6V)
Symbol Parameter Test Condition Options Min. Typ.
(1)
Max. Unit
VDR VDD for Data Retention See Data Retention Waveform 2.0 — 3.6 V
IDR Data Retention Current VDD = 2.0V, CE ≥ VDD – 0.2V Com. — 0.2 1 mA
Ind. — — 2
Auto. 10
tSDR Data Retention Setup Time See Data Retention Waveform 0 — — ns
tRDR Recovery Time See Data Retention Waveform tRC ——ns
Note 1: Typical values are measured at V
DD
= 3.0V, T
A
= 25
O
C and not 100% tested.
V
DD
CE ≥ VDD
- 0.2V
tSDR tRDR
VDR
CE
GND
Data Retention Mode
DATA RETENTION SWITCHING CHARACTERISTICS (1.65V-2.2V)
Symbol Parameter Test Condition Options Min. Typ.
(1)
Max. Unit
VDR VDD for Data Retention See Data Retention Waveform 1.2 — 3.6 V
IDR Data Retention Current VDD = 1.2V, CE ≥ VDD – 0.2V Com. — 0.2 1 mA
Ind. — — 2
tSDR Data Retention Setup Time See Data Retention Waveform 0 — — ns
tRDR Recovery Time See Data Retention Waveform tRC ——ns
: Typical values are measured at V
DD
= 1.8V, T
A
= 25
O
C and not 100% tested.
: 3.3V ,
: 3.3V ,
18
Integrated Silicon Solution, Inc. — www.issi.com
Rev. G
07/15/2010
IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
ORDERING INFORMATION (HIGH SPEED)
Commercial Range: 0°C to +70°C
Voltage Range: 2.4V to 3.6V
Speed (ns) Order Part No. Package
10 (81) IS61WV25616BLL-10TL TSOP (Type II), Lead-free
Note:
1. Speed = 8ns for VDD = 3.3V + 5%. Speed = 10ns for VDD = 2.4V to 3.6V.
Industrial Range: -40°C to +85°C
Voltage Range: 2.4V to 3.6V
Speed (ns) Order Part No. Package
10 (81) IS61WV25616BLL-10BI 48 mini BGA (6mm x 8mm)
IS61WV25616BLL-10BLI 48 mini BGA (6mm x 8mm), Lead-free
IS61WV25616BLL-10TI TSOP (Type II)
IS61WV25616BLL-10TLI TSOP (Type II), Lead-free
Note:
1. Speed = 8ns for VDD = 3.3V + 5%. Speed = 10ns for VDD = 2.4V to 3.6V.
Industrial Range: -40°C to +85°C
Voltage Range: 1.65V to 2.2V
Speed (ns) Order Part No. Package
20 IS61WV25616ALL-20BI 48 mini BGA (6mm x 8mm)
IS61WV25616ALL-20TI TSOP (Type II)
IS61WV25616ALL-20TLI TSOP (Type II), Lead-free
Automotive Range: -40°C to +125°C
Voltage Range: 2.4V to 3.6V
Speed (ns) Order Part No. Package
10 IS64WV25616BLL-10BA3 48 mini BGA (6mm x 8mm)
IS64WV25616BLL-10BLA3 48 mini BGA (6mm x 8mm), Lead-free
IS64WV25616BLL-10CTA3 TSOP (Type II), Copper Leadframe
IS64WV25616BLL-10CTLA3 TSOP (Type II), Lead-free, Copper Leadframe
Integrated Silicon Solution, Inc. — www.issi.com
19
Rev. G
07/15/2010
1
2
3
4
5
6
7
8
9
10
11
12
IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
ORDERING INFORMATION (LOW POWER)
Industrial Range: -40°C to +85°C
Voltage Range: 2.4V to 3.6V
Speed (ns) Order Part No. Package
25 IS61WV25616BLS-25TLI TSOP (Type II), Lead-free
Industrial Range: -40°C to +85°C
Voltage Range: 1.65V to 2.2V
Speed (ns) Order Part No. Package
45 IS61WV25616ALS-45TLI TSOP (Type II), Lead-free
PEG
5mm
<09"? «:8on="" £3="" mhel="" 3;="">20
Integrated Silicon Solution, Inc. — www.issi.com
Rev. G
07/15/2010
IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
2. Reference document : JEDEC MO-207
1. CONTROLLING DIMENSION : MM .
NOTE :
08/12/2008
Package Outline
mpIntegrated Silicon Solution, Inc. — www.issi.com
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Rev. G
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2
3
4
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IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
2. DIMENSION D AND E1 DO NOT INCLUDE MOLD PROTRUSION.
3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION/INTRUSION.
1. CONTROLLING DIMENSION : MM
NOTE :
06/04/2008
Package Outline
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