MG1275W-XBN2MM Datasheet by Littelfuse Inc.

% Litleltuse“ ExpemxeADnllzd \ Amway

256

Power Module

Specifications are subject to change without notice.

Revised:12/04/14

MG1275W-XBN2MM

1200V 75A IGBT Module

Features

RoHS

Applications

• High level of

integration—only one

power semiconductor

module required for the

whole drive

• Low saturation voltage

and positive temperature

coefficient

• Fast switching and short

tail current

• Free wheeling diodes

with fast and soft reverse

recovery

• Industry standard

package with insulated

copper base plate and

soldering pins for PCB

mounting

• Temperature sense

included

• AC motor control

• Motion/servo control

• Inverter and power

supplies

Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)

Symbol Parameters Test Conditions Values Unit

IGBT

VCES Collector - Emitter Voltage TJ=25°C 1200 V

VGES Gate - Emitter Voltage ±20 V

ICDC Collector Current TC=25°C 105 A

TC=80°C 75 A

ICM Repetitive Peak Collector Current tp=1ms 150 A

Ptot Power Dissipation Per IGBT 348 W

Diode

VRRM Repetitive Reverse Voltage TJ=25°C 1200 V

IF(AV) Average Forward Current TC=25°C 105 A

TC=80°C 75 A

IFRM Repetitive Peak Forward Current tp=1ms 150 A

I2t TJ =125°C, t=10ms, VR=0V 115 0 A2s

Module Characteristics (TJ = 25°C, unless otherwise specified)

Symbol Parameters Test Conditions Min Typ Max Unit

TJ max) Max. Junction Temperature 150 °C

TJ op Operating Temperature -40 125 °C

Tstg Storage Temperature -40 125 °C

Visol Insulation Test Voltage AC, t=1min 3000 V

CTI Comparative Tracking Index 250

MdMounting Torque Recommended (M5) 2.5 5N·m

Weight 300 g

MG1275W-XBN2MM

1

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257

Power Module

Specifications are subject to change without notice.

Revised:12/04/14

MG1275W-XBN2MM

1200V 75A IGBT Module

Symbol Parameters Test Conditions Min Typ Max Unit

IGBT

VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=3.0mA 5.0 5.8 6.5 V

VCE(sat)

Collector - Emitter IC=75A, VGE=15V, TJ=25°C 1. 7 V

Saturation Voltage IC=75A, VGE=15V, TJ=125°C 1. 9 V

IICES Collector Leakage Current VCE=1200V, VGE=0V, TJ=25°C 1mA

VCE=1200V, VGE=0V, TJ=125°C 10 mA

IGES Gate Leakage Current VCE=0V, VGE=±15V, TJ=125°C -400 400 nA

RGint Integrated Gate Resistor 10 Ω

Qge Gate Charge VCE=600V, IC=75A , VGE=±15V 0.7 μC

Cies Input Capacitance

VCE=25V, VGE=0V, f =1MHz

5.3 nF

CRES Reverse Transfer Capacitance 0.2 nF

td(on) Turn - on Delay Time

VCC=600V

IC=75A

RG =4.7Ω

VGE=±15V

Inductive Load

T J=25°C 260 ns

TJ=125°C 290 ns

trRise Time T J=25°C 30 ns

TJ=125°C 50 ns

td(off) Turn - off Delay Time T J=25°C 420 ns

TJ=125°C 520 ns

tfFall Time T J=25°C 70 ns

TJ=125°C 90 ns

Eon Turn - on Energy T J=25°C 6.6 mJ

TJ=125°C 9.4 mJ

Eoff Turn - off Energy T J=25°C 6.8 mJ

TJ=125°C 8.0 mJ

ISC Short Circuit Current tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V 300 A

RthJC Junction-to-Case Thermal Resistance (Per IGBT) 0.36 K/W

Diode

VFForward Voltage IF=75A, VGE=0V, TJ =25°C 1.65 V

IF=75A, VGE=0V, TJ =125°C 1.65 V

tRR Reverse Recovery Time IF=75A, VR=600V

diF/dt=2000A/µs

TJ=125°C

300 ns

IRRM Max. Reverse Recovery Current 85 A

Erec Reverse Recovery Energy 6.5 mJ

RthJCD Junction-to-Case Thermal Resistance (Per Diode) 0.6 K/W

Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified)

2

% Litleltuse“ ExpemuADNIEd‘Anxwz | ,

258

Power Module

Specifications are subject to change without notice.

Revised:12/04/14

MG1275W-XBN2MM

1200V 75A IGBT Module

Diode-Rectifier Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)

Symbol Parameters Test Conditions Values Unit

VRRM Repetitive Reverse Voltage TJ=25°C 1600 V

IF(AV) Average Forward Current TC=80°C 75 A

IFRM

Non-Repetitive Surge Forward

Current

TJ=45°C, t=10ms, 50Hz 450 A

TJ=45°C, t=8.3ms, 60Hz 400

I2tTJ=45°C, t=10ms, 50Hz 1012 A2s

TJ=45°C, t=8.3ms, 60Hz 800

Diode-Rectifier Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified)

Symbol Parameters Test Conditions Min Typ Max Unit

VFForward Voltage IF=75A, TJ =25°C 1.25 V

IF=75A, TJ =125°C 1. 15 V

IRReverse Leakage Current VR=1600V, TJ =25°C 50 μA

VR=1600V, TJ =125°C 1mA

RthJCD

Junction-to-Case Thermal

Resistance (Per Diode) 0.66 K/W

Brake-Chopper Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)

Symbol Parameters Test Conditions Values Unit

IGBT

VCES Collector - Emitter Voltage TJ=25°C 1200 V

VGES Gate - Emitter Voltage ±20 V

ICDC Collector Current TC=25°C 55 A

TC=80°C 40 A

ICM Repetitive Peak Collector Current tp=1ms 80 A

Ptot Power Dissipation Per IGBT 195 W

Diode

VRRM Repetitive Reverse Voltage TJ=25°C 1200 V

IF(AV) Average Forward Current TC=25°C 35 A

TC=80°C 25 A

IFRM Repetitive Peak Forward Current tp=1ms 50 A

I2t TJ =125°C, t=10ms, VR=0V 200 A2s

3

% Litleltuse“ ExpemxeADnllzd \ Amway

259

Power Module

Specifications are subject to change without notice.

Revised:12/04/14

MG1275W-XBN2MM

1200V 75A IGBT Module

Symbol Parameters Test Conditions Min Typ Max Unit

IGBT

VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=1.5mA 5.0 5.8 6.5 V

VCE(sat)

Collector - Emitter IC=40A, VGE=15V, TJ=25°C 1. 8 V

Saturation Voltage IC=40A, VGE=15V, TJ=125°C 2.05 V

IICES Collector Leakage Current VCE=1200V, VGE=0V, TJ=25°C 0.25 μA

VCE=1200V, VGE=0V, TJ=125°C 2mA

IGES Gate Leakage Current VCE=0V, VGE=±15V, TJ=125°C -400 400 nA

RGint Integrated Gate Resistor 6 Ω

Qge Gate Charge VCE=600V, IC=40A , VGE=±15V 0.33 μC

Cies Input Capacitance VCE=25V, VGE=0V, f =1MHz 2.5 nF

CRES Reverse Transfer Capacitance 0.11 nF

td(on) Turn - on Delay Time

VCC=600V

IC=40A

RG =27Ω

VGE=±15V

Inductive Load

T J =25°C 90 ns

TJ =125°C 90 ns

trRise Time T J =25°C 30 ns

TJ =125°C 50 ns

td(off) Turn - off Delay Time T J =25°C 420 ns

TJ =125°C 520 ns

tfFall Time T J =25°C 70 ns

TJ =125°C 90 ns

Eon Turn - on Energy T J =25°C 4.1 mJ

TJ =125°C 6.0 mJ

Eoff Turn - off Energy T J =25°C 3.1 mJ

TJ =125°C 3.6 mJ

ISC Short Circuit Current tpsc≤10μS, VGE=15V; TJ=125°C, VCC=900V 160 A

RthJC

Junction-to-Case Thermal

Resistance (Per IGBT) 0.62 K/W

Diode

VFForward Voltage IF=25A , VGE=0V, TJ =25°C 1.55 V

IF=25A , VGE=0V, TJ =125°C 1.54 V

tRR Reverse Recovery Time IF=25A, VR=600V

diF/dt=-400A/µs

TJ=125°C

200 ns

IRRM Max. Reverse Recovery Current 20 A

Erec Reverse Recovery Energy 1. 5 mJ

RthJCD

Junction-to-Case Thermal

Resistance (Per Diode) 1.22 K/W

Brake-Chopper Electrical and Thermal Characteristics (TJ = 25°C, unless otherwise specified)

NTC Characteristics (TJ = 25°C, unless otherwise specified)

Symbol Parameters Test Conditions Min Typ Max Unit

R25 Resistance Tc=25°C 5 KΩ

B25/50 3375 K

4

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260

Power Module

Specifications are subject to change without notice.

Revised:12/04/14

MG1275W-XBN2MM

1200V 75A IGBT Module

Figure 1: Typical Output Characteristics

for IGBT Inverter

I

C

(A)

V

CE

˄V˅

T

j

=125°C

T

j

=25°C

150

120

60

30

0

0 0.5 1.0 1.5 2.0 2.5 3.0

V

GE

=15V

3.5

90

Figure 2: Typical Output Characteristics

for IGBT Inverter

VGE˄V˅

0

30

IC (A)

60

150

Tj

=125°C

Tj

=25°C

VCE =20V

12 9 01 5 6 78 11

90

120

Figure 3: Typical Transfer Characteristics

for IGBT Inverter

15

25

10

5

001020 40 50

E

on

E

off

(

mJ

)

E

on

E

of

f

R

G

˄Ω˅

V

CE

=600V

I

C

=75A

V

GE

=±15V

T

j

=125°C

20

30

Figure 4: Switching Energy vs. Gate Resistor

for IGBT Inverter

0 30

IC˄A˅

VCE=600V

RG=4.7

Ω

VGE=±15V

T

j

=125°C

150

90

60

Eoff

Eon

0

10

15

30

Eon Eoff

(

mJ

)

20

120

25

5

Figure 5: Switching Energy vs. Collector Current

for IGBT Inverter

Figure 6: Reverse Biased Safe Operating Area

for IGBT Inverter

0

30

60

90

150

180

0200 400 600 800 1000 1200

V

CE

˄V˅

1400

RG=4.7Ω

VGE=±15V

T

j

=125°C

I

C

(A)

120

V

CE

˄V˅

4.0 3.5 3.0 2.5 1.51.00.50

I

C

(A)

T

J

=125°C

2.04.5 5.0

0

GE

V=11V

GE

V= 9V

GE

V=13V

GE

V=15V

GE

V=17V

GE

V=19V

150

120

60

30

90

5

% Litleltuse“ ExpemxaADnllzd \ Anxwux Damn I ) \ / 0.6 0 <>

261

Power Module

Specifications are subject to change without notice.

Revised:12/04/14

MG1275W-XBN2MM

1200V 75A IGBT Module

Figure 7: Diode Forward Characteristics

for Diode Inverter

V

F

˄V˅

0.5

0 1.0 1.5 0.2

0

30

90

150

60

T

j

=25°C

T

j

=125°C

2.5

120

I

F

(

A

)

E

rec

(

mJ

)

RG˄Ω˅

010 20 30 50

6.0

4.0

2.0

0

10.0

IF=75A

VCE=600V

T

j

=125°C

40

8.0

Figure 8: Switching Energy vs. Gate Resistort

for Diode Inverter

E

rec

(

mJ

)

4.0

2.0

0 30

IF (A)

90 60

0

8.0

10.0

RG=4.7Ω

VCE=600V

T

j

=125°C

150

120

6.0

Figure 9: Switching Energy vs. Forward Current

for Diode Inverter

Rectangular Pulse Duration (seconds)

Z

thJC

(

K/W

)

0.0010.010.1 1 10

0.01

0.1

1

Diode

IGBT

Figure 10: Transient Thermal Impedance of

Diode and IGBT Inverter

Figure 12: Typical Output Characteristics

for IGBT Brake Chopper

I

C

(A)

V

CE

˄V˅

T

j

=125°C

T

j

=25°C

80

60

40

20

000.5 1.01.5 2.0 2.5 3.0

V

GE

=15V

3.5

Figure 11: Diode Forward Characteristics

for IGBT Inverter

V

F

˄V˅

0.2

0 0.4 0.6 1.2

0

25

75

150

50

I

F

(

A

)

T

j

=25°C

T

j

=125°C

0.8 1.0 1.6

100

125

1.4

6

Tc (‘0) ' :m 22:: E 5 ”A “J “J I 2 3 7 1! 17 15 14")J 130J 120J "OJ 3 24C 310 G1275W a E

262

Power Module

Specifications are subject to change without notice.

Revised:12/04/14

MG1275W-XBN2MM

1200V 75A IGBT Module

Figure 14: NTC Characteristics

IF=25

A

VCE=600V

T

V

j

=125°C

R (¡)

T

C

˄°C˅

T

Vj

=125°C

T

Vj

=25°C

100000

10000

1000

100020 40 60 80 100

V

GE

=15V

140

120 160

R

Figure 13: Diode Forward Characteristics

for Diode Brake Chopper

V

F

˄V˅

I

F

(

A

)

0.5

0 1.0 1.5 2.0 3.0

0

10

30

40

50

20

T

j

=25°C

T

j

=125°C

2.5

Part Numbering System Part Marking System

PRODUCT TYPE

M: Power Module

MODULE TYPE

G: IGBT

CIRCUIT TYPE

WAFER TYPE

PACKAGE TYPE

MG1275 W-XBN2MM

VOLTAGE RATING

CURRENT RATING

ASSEMBLY SITE

12: 1200V

75: 75A W: Package W

XB: XB

LOT NUMBER

Space

reserved

for QR

code

MG1275W-XBN2MM

Circuit Diagram

7

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263

Power Module

Specifications are subject to change without notice.

Revised:12/04/14

MG1275W-XBN2MM

1200V 75A IGBT Module

Packing Options

Part Number Marking Weight Packing Mode M.O.Q

MG1275W-XBN2MM MG1275W-XBN2MM 300g Bulk Pack 20

Dimensions-Package W

$

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Dimensions (mm)

8

MG1275W-XBN2MM Datasheet by Littelfuse Inc.

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