APTGL475U120D4G Datasheet by Microchip Technology

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Microseml POWER PRODUCTS GROUP Absolute maximum ratings Symbol Parameter Max ratings Um't \n 1 3 Colleclor 7 Emmer Breakdown Voltage 1 I1. Conunuous Collector Clu'renl T‘ ’ 25°C T( 7 80°C 11 1. Pulsed Collecmr Current T1 7 25°C 1 \Qvl Cram 7 Emmer Volmge PD Maxunum Power D|ss1pauon T1 , 25°C 2 RBSOA Reverse Ems Safe Operalmg Area T‘ 7 125°C 800A {3“ CAUTION: 111m Dumas um mmluu: m Heummuc Unchurgu I’mpcr Hundlmg I’m sec upphcmlun nmc Al’ 1 115111 on \\\\\.V mlcrmcnn Cum
APTGL475U120D4G
APTGL475U120D4G – Rev 1 October 2012
www.microsemi.com 1-6
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1200 V
TC = 25°C 610
IC Continuous Collector Current TC = 80°C 475
ICM Pulsed Collector Current TC = 25°C 1200
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 2082 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 800A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
3
5
2
1
VCES = 1200V
IC = 475A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT 4 Technology
- Low voltage drop
- Low leakage current
- Low switching losses
- Soft recovery parallel diodes
- Low diode VF
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
M6 connectors for power
M4 connectors for signal
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Single switch
Trench + Field Stop IGBT4
P
ower Module
OMicrosemL POWER PRODUCTS GROUP
APTGL475U120D4G
APTGL475U120D4G – Rev 1 October 2012
www.microsemi.com 2-6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V ; VCE = 1200V 4 mA
Tj = 25°C 1.8 2.2
VCE(sat) Collector Emitter Saturation Voltage VGE =15V
IC = 400A Tj = 150°C 2.2 V
VGE(th) Gate Threshold Voltage VGE = VCE, IC = 10 mA 5 5.8 6.5 V
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 24.6
Coes Output Capacitance 1.62
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 1.38
nF
QG Gate charge VGE= -8V / 15V ; VCE=600V
IC=400A 2.3 µC
Td(on) Turn-on Delay Time 160
Tr Rise Time 30
Td(off) Turn-off Delay Time 340
Tf Fall Time
Inductive Switching (25°C)
VGE = ±15V
VCE = 600V
IC = 400A
RG = 1.8 80
ns
Td(on) Turn-on Delay Time 170
Tr Rise Time 40
Td(off) Turn-off Delay Time 450
Tf Fall Time
Inductive Switching (150°C)
VGE = ±15V
VCE = 600V
IC = 400A
RG = 1.8 170
ns
Eon Turn-on Switching Energy TJ = 150°C 44 mJ
Eoff Turn-off Switching Energy
VGE = ±15V
VCE = 600V
IC = 400A
RG = 1.8 TJ = 150°C 44 mJ
Isc Short Circuit data VGE 15V ; VBus = 900V
tp 10µs ; Tj = 150°C 1600 A
Diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Repetitive Reverse Voltage 1200 V
Tj = 25°C 250
IRRM Maximum Reverse Leakage Current VR=1200V Tj = 150°C 2000
µA
IF DC Forward Current TC = 80°C 400 A
Tj = 25°C 1.7 2.2
VF Diode Forward Voltage IF = 400A
VGE = 0V Tj = 150°C 1.65 V
Tj = 25°C 155
trr Reverse Recovery Time Tj = 150°C 300 ns
Tj = 25°C 37.2
Qrr Reverse Recovery Charge Tj = 150°C 78 µC
Tj = 25°C 16
Err Reverse Recovery Energy
IF = 400A
VR = 600V
di/dt = 7000A/µs
Tj = 150°C 32 mJ
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APTGL475U120D4G
APTGL475U120D4G – Rev 1 October 2012
www.microsemi.com 3-6
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.072
RthJC Junction to Case Thermal Resistance Diode 0.14 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V
TJ Operating junction temperature range -40 175
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 125
°C
M6 3 5
Torque Mounting torque M4 1 2
N.m
Wt Package Weight 350 g
D4 Package outline (dimensions in mm)
GMicmsemL POWER PRODUCTS GROUP APTGL475 lo (‘0 lo (M E [mJ) C’W) ypical Performance Curve Oukpul Characlens .es (vfifilsvl ampul cnaracler sou auo sou auo ‘ Ana i 400 l '9 l 200 zoo ‘ u o l o l 2 3 4 We (VI VcE (V) Energy losses vs Collecl am) 160 50W 140 W eon 120 1 a a loo 5'” 400 E 30 i u so 7 ssssss 200 4° * 20 7 o o 5 e 7 a 9 10 H 12 1 ° 20° 4°“ vse M I: w Swilching Energy Losses Vs Gale Resistance Reverse gins safe opera so 960 70 mo 7 7 so 640 7 so so 480 40 320 50'0 ao ‘60 km s n 20 o o 25 5 75 lo 0 «no 600 900 Gale Resislance lonmsl VcE lvl maximum Effective Yransienl rnermal Impedance. Junaion m ease vs Pulse Dur u 05
APTGL475U120D4G
APTGL475U120D4G – Rev 1 October 2012
www.microsemi.com 4-6
Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25°C
T
J
=150°C
0
200
400
600
800
01234
V
CE
(V)
I
C
(A)
Output Characteristics
V
GE
=15V
V
GE
=19V
V
GE
=9V
0
200
400
600
800
01234
V
CE
(V)
I
C
(A)
T
J
= 150°C
Transfert Characteristics
T
J
=25°C
T
J
=150°C
0
200
400
600
800
5 6 7 8 9 10 11 12 13
V
GE
(V)
I
C
(A)
Energy losses vs Collector Current
Eon
Eoff
Er
0
20
40
60
80
100
120
140
160
0 200 400 600 800
I
C
(A)
E (mJ)
V
CE
= 600V
V
GE
= 15V
R
G
= 1.8
T
J
= 150°C
Eon
Eoff
Er
20
30
40
50
60
70
80
02.557.510
Gate Resistance (ohms)
E (mJ)
V
CE
= 600V
V
GE
=15V
I
C
= 400A
T
J
= 150°C
Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area
0
160
320
480
640
800
960
0 300 600 900 1200 1500
V
CE
(V)
I
C
(A)
V
GE
=15V
T
J
=150°C
R
G
=1.8
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
IGBT
G Microseml POWER PRODUCTS GROUP max, Operating Frequency (ka 150 120 an an an Ham mmmng 120 24m 360 In W * * Smg‘e Pmse , * 0 mm H mm a m u 1 Redangular Pulse Duration In Seconds m ouubu 20|2 APTGLMSL zoma {ml
APTGL475U120D4G
APTGL475U120D4G – Rev 1 October 2012
www.microsemi.com 5-6
Hard
switching
ZCS
ZVS
0
30
60
90
120
150
180
0 120 240 360 480 600
I
C
(A)
Fmax, Operating Frequency (kHz)
V
CE
=600V
D=50%
R
G
=1.8
T
J
=150°C
Tc=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration in Seconds
Thermal Impedance (°C/W)
Diode
Forward Characteristic of diode
T
J
=25°C
T
J
=150°C
0
200
400
600
800
0 0.4 0.8 1.2 1.6 2 2.4
V
F
(V)
I
F
(A)
GMicrosemL POWER PRODUCTS GROUP DISCLAIMER hupz/ www.microsemLcom legal/mc.asp Ln‘e Sumgorl Applicauon
APTGL475U120D4G
APTGL475U120D4G – Rev 1 October 2012
www.microsemi.com 6-6
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