MG12450WB-BN2MM Datasheet by Littelfuse Inc.

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% Litleltuse“ ExpemxeADnllzd \ Amway
Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
109
MG12450WB-BN2MM
1200V 450A IGBT Module
Features
RoHS
Applications
IGBT3 CHIP(Trench+Field
Stop technology)
Low saturation voltage
and positive temperature
coefficient
Fast switching and short
tail current
Free wheeling diodes
with fast and soft reverse
recovery
Temperature sense
included
AC motor control
Motion/servo control
Photovoltaic/Fuel cell
Inverter and power
supplies
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)
Symbol Parameters Test Conditions Values Unit
IGBT
VCES Collector - Emitter Voltage TJ=25°C 1200 V
VGES Gate - Emitter Voltage ±20 V
ICDC Collector Current TC=25°C 600 A
TC=80°C 450 A
ICM Repetitive Peak Collector Current tp=1ms 900 A
Ptot Power Dissipation Per IGBT 1950 W
Diode
VRRM Repetitive Reverse Voltage TJ=25°C 1200 V
IF(AV) Average Forward Current TC=25°C 450 A
TC=80°C 350 A
IFRM Repetitive Peak Forward Current tp=1ms 900 A
I2tTJ =125°C, t=10ms, VR=0V 34000 A2s
Module Characteristics (TJ = 25°C, unless otherwise specified)
Symbol Parameters Test Conditions Min Typ Max Unit
TJ max Max. Junction Temperature 150 °C
TJ op Operating Temperature -40 125 °C
Tstg Storage Temperature -40 125 °C
Visol Insulation Test Voltage AC, t=1min 3000 V
CTI Comparative Tracking Index 210
Torque Module-to-Sink Recommended (M5) 2.5 5N·m
Torque Module Electrodes Recommended (M6) 3 5 N·m
Weight 350 g
MG12450WB-BN2MM
1
% Litleltuse“ ExpemxeADnllzd \ Amway
Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
110
MG12450WB-BN2MM
1200V 450A IGBT Module
Symbol Parameters Test Conditions Min Typ Max Unit
IGBT
VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=18mA 5.0 5.8 6.5 V
VCE(sat)
Collector - Emitter IC=450A, VGE=15V, TJ=25°C 1. 7 V
Saturation Voltage IC=450A, VGE=15V, TJ=125°C 2.0 V
IICES Collector Leakage Current VCE=1200V, VGE=0V, TJ=25°C 1mA
VCE=1200V, VGE=0V, TJ=125°C 5mA
IGES Gate Leakage Current VCE=0V, VGE=±15V, TJ=125°C -400 400 nA
RGint Integrated Gate Resistor 1. 7 Ω
Qge Gate Charge VCE=600V, IC=450A , VGE=±15V 4.3 μC
Cies Input Capacitance
VCE=25V, VGE=0V, f =1MHz
32 nF
Cres Reverse Transfer Capacitance 1. 5 nF
td(on) Turn - on Delay Time
VCC=600V
IC=450A
RG =1.6Ω
VGE=±15V
Inductive Load
T J=25°C 160 ns
TJ=125°C 170 ns
trRise Time T J=25°C 45 ns
TJ=125°C 50 ns
td(off) Turn - off Delay Time T J=25°C 460 ns
TJ=125°C 530 ns
tfFall Time T J=25°C 100 ns
TJ=125°C 150 ns
Eon Turn - on Energy T J=25°C 20 mJ
TJ=125°C 31 mJ
Eoff Turn - off Energy T J=25°C 33 mJ
TJ=125°C 55 mJ
ISC Short Circuit Current tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V 1800 A
RthJC Junction-to-Case Thermal Resistance (Per IGBT) 0.064 K/W
Diode
VFForward Voltage IF=450A, VGE=0V, TJ =25°C 1.65 V
IF=450A, VGE=0V, TJ =125°C 1. 6 V
tRR Reverse Recovery Time IF=450A, VR=600V
diF/dt=-7200A/µs
TJ=125°C
255 ns
IRRM Max. Reverse Recovery Current 385 A
Erec Reverse Recovery Energy 38 mJ
RthJCD Junction-to-Case Thermal Resistance (Per Diode) 0.12 K/W
Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified)
2
NTC Characteristics (TJ = 25°C, unless otherwise specified)
Symbol Parameters Test Conditions Min Typ Max Unit
R25 Resistance Tc=25°C 5 KΩ
B25/50 3375 K
“-54 .5 1.0 1.5 E // / =125~c 7/ A E." \ H
Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
111
MG12450WB-BN2MM
1200V 450A IGBT Module
Figure 1: Typical Output Characteristics
for IGBT Inverter
I
C
(A)
V
CE
˄V˅
T
J
=125°C
T
J
=25°C
900
750
450
300
150
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V
GE
=15V
600
Figure 2: Typical Output Characteristics
for IGBT Inverter
VGE˄V˅
0
IC (A)
TJ
=125°C
TJ
=25°C
VCE =20V
1210 9 7 6 5 8 11
900
750
450
300
150
600
Figure 3: Typical Transfer Characteristics
for IGBT Inverter
80
180
40
60
20
002
468 16
Eon Eoff
(
mJ
)
E
on
E
of
f
RG˄˅
V
CE
=600V
I
C
=450A
V
GE
=±15V
TJ
=125°C
10 12
160
120
140
100
14
Figure 4: Switching Energy vs. Gate Resistor
for IGBT Inverter
0 150
I
C
˄A˅
VCE=600V
RG=1.6
VGE=±15V
T
J
=125°C
600 450
300
Eoff
Eon
0
20
40
60
140
E
on
E
off
(
mJ
)
80
900
750
120
100
Figure 5: Switching Energy vs. Collector Current
for IGBT Inverter
Figure 6: Reverse Biased Safe Operating Area
for IGBT Inverter
0
200
400
600
800
1000
0200 400 600800 1000 1200
V
CE
˄V˅
1400
RG=1.6
VGE=±15V
T
J
=125°C
I
C
(A)
V
CE
˄V˅
4.0 3.5 3.0 2.5 1.51.00.50
I
C
(A)
T
J
=125°C
2.04.5 5.0
0
900
750
450
300
150
600
GE
V=11V
GE
V= 9V
GE
V=13V
GE
V=15V
GE
V=17V
GE
V=19V
3
% Litleltuse“ ExpemxaADnllzd \ Anxwux Damn ml 100 Tc (“0)
Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
112
MG12450WB-BN2MM
1200V 450A IGBT Module
Figure 7: Diode Forward Characteristics
for Diode Inverter
V
F
˄V˅
0.4
0 0.8 1.2 1.6 2.4
0
I
F
(
A
)
T
J
=25°C
T
J
=125°C
2.0
900
750
450
300
150
600
E
rec
mJ
RG˄˅
024 68 10 12 16
20
15
10
5
0
25
45
I
F
=450
A
V
CE
=600V
TJ
=125°C
14
40
35
30
Figure 8: Switching Energy vs. Gate Resistort
for Diode Inverter
ZthJC
(
K/W
)
0.001 0.01 0.11 10
0.001
0.01
1
10
Diode
IGBT
0.1
Rectangular Pulse Duration (seconds)
Figure 9: Transient Thermal Impedance of
Diode and IGBT Inverter
T
C
˄°C˅
100000
10000
1000
100020 40 60 80 100 140
120 160
R
Figure 10: NTC Characteristics
Circuit Diagram
4
% Litleltuse“ ExpemxaADnllzd \ Anxwux Damn 2m A2:1$“‘°‘ L QTTLE {1% [1H nu nn_
Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
113
MG12450WB-BN2MM
1200V 450A IGBT Module
Part Numbering System Part Marking System
PRODUCT TYPE
M: Power Module
MODULE TYPE
G: IGBT
CIRCUIT TYPE
WAFER TYPE
PACKAGE TYPE
MG12450
WB
-
B
N2
MM
VOLTAGE RATING
CURRENT RATING
ASSEMBLY SITE
12: 1200V
450: 450A
2x(IGBT+FWD)
LOT NUMBER
Space
reserved
for QR
code
MG12450WB-BN2MM
Dimensions-Package WB
Packing Options
Part Number Marking Weight Packing Mode M.O.Q
MG12450WB-BN2MM MG12450WB-BN2MM 350g Bulk Pack 60
5
The foot pins are in gold / nickel coating

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