% Litleltuse“
ExpemxeADnllzd \ Amway
Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
109
MG12450WB-BN2MM
1200V 450A IGBT Module
Features
RoHS
Applications
• IGBT3 CHIP(Trench+Field
Stop technology)
• Low saturation voltage
and positive temperature
coefficient
• Fast switching and short
tail current
• Free wheeling diodes
with fast and soft reverse
recovery
• Temperature sense
included
• AC motor control
• Motion/servo control
• Photovoltaic/Fuel cell
• Inverter and power
supplies
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)
Symbol Parameters Test Conditions Values Unit
IGBT
VCES Collector - Emitter Voltage TJ=25°C 1200 V
VGES Gate - Emitter Voltage ±20 V
ICDC Collector Current TC=25°C 600 A
TC=80°C 450 A
ICM Repetitive Peak Collector Current tp=1ms 900 A
Ptot Power Dissipation Per IGBT 1950 W
Diode
VRRM Repetitive Reverse Voltage TJ=25°C 1200 V
IF(AV) Average Forward Current TC=25°C 450 A
TC=80°C 350 A
IFRM Repetitive Peak Forward Current tp=1ms 900 A
I2tTJ =125°C, t=10ms, VR=0V 34000 A2s
Module Characteristics (TJ = 25°C, unless otherwise specified)
Symbol Parameters Test Conditions Min Typ Max Unit
TJ max Max. Junction Temperature 150 °C
TJ op Operating Temperature -40 125 °C
Tstg Storage Temperature -40 125 °C
Visol Insulation Test Voltage AC, t=1min 3000 V
CTI Comparative Tracking Index 210
Torque Module-to-Sink Recommended (M5) 2.5 5N·m
Torque Module Electrodes Recommended (M6) 3 5 N·m
Weight 350 g
MG12450WB-BN2MM
1
% Litleltuse“
ExpemxeADnllzd \ Amway
Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
110
MG12450WB-BN2MM
1200V 450A IGBT Module
Symbol Parameters Test Conditions Min Typ Max Unit
IGBT
VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=18mA 5.0 5.8 6.5 V
VCE(sat)
Collector - Emitter IC=450A, VGE=15V, TJ=25°C 1. 7 V
Saturation Voltage IC=450A, VGE=15V, TJ=125°C 2.0 V
IICES Collector Leakage Current VCE=1200V, VGE=0V, TJ=25°C 1mA
VCE=1200V, VGE=0V, TJ=125°C 5mA
IGES Gate Leakage Current VCE=0V, VGE=±15V, TJ=125°C -400 400 nA
RGint Integrated Gate Resistor 1. 7 Ω
Qge Gate Charge VCE=600V, IC=450A , VGE=±15V 4.3 μC
Cies Input Capacitance
VCE=25V, VGE=0V, f =1MHz
32 nF
Cres Reverse Transfer Capacitance 1. 5 nF
td(on) Turn - on Delay Time
VCC=600V
IC=450A
RG =1.6Ω
VGE=±15V
Inductive Load
T J=25°C 160 ns
TJ=125°C 170 ns
trRise Time T J=25°C 45 ns
TJ=125°C 50 ns
td(off) Turn - off Delay Time T J=25°C 460 ns
TJ=125°C 530 ns
tfFall Time T J=25°C 100 ns
TJ=125°C 150 ns
Eon Turn - on Energy T J=25°C 20 mJ
TJ=125°C 31 mJ
Eoff Turn - off Energy T J=25°C 33 mJ
TJ=125°C 55 mJ
ISC Short Circuit Current tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V 1800 A
RthJC Junction-to-Case Thermal Resistance (Per IGBT) 0.064 K/W
Diode
VFForward Voltage IF=450A, VGE=0V, TJ =25°C 1.65 V
IF=450A, VGE=0V, TJ =125°C 1. 6 V
tRR Reverse Recovery Time IF=450A, VR=600V
diF/dt=-7200A/µs
TJ=125°C
255 ns
IRRM Max. Reverse Recovery Current 385 A
Erec Reverse Recovery Energy 38 mJ
RthJCD Junction-to-Case Thermal Resistance (Per Diode) 0.12 K/W
Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified)
2
NTC Characteristics (TJ = 25°C, unless otherwise specified)
Symbol Parameters Test Conditions Min Typ Max Unit
R25 Resistance Tc=25°C 5 KΩ
B25/50 3375 K
“-54 .5 1.0 1.5
E // /
=125~c
7/ A E."
\ H
Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
111
MG12450WB-BN2MM
1200V 450A IGBT Module
Figure 1: Typical Output Characteristics
for IGBT Inverter
I
C
(A)
V
CE
˄V˅
T
J
=125°C
T
J
=25°C
900
750
450
300
150
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V
GE
=15V
600
Figure 2: Typical Output Characteristics
for IGBT Inverter
VGE˄V˅
0
IC (A)
TJ
=125°C
TJ
=25°C
VCE =20V
1210 9 7 6 5 8 11
900
750
450
300
150
600
Figure 3: Typical Transfer Characteristics
for IGBT Inverter
80
180
40
60
20
002
468 16
Eon Eoff
(
mJ
)
E
on
E
of
f
RG˄Ω˅
V
CE
=600V
I
C
=450A
V
GE
=±15V
TJ
=125°C
10 12
160
120
140
100
14
Figure 4: Switching Energy vs. Gate Resistor
for IGBT Inverter
0 150
I
C
˄A˅
VCE=600V
RG=1.6
Ω
VGE=±15V
T
J
=125°C
600 450
300
Eoff
Eon
0
20
40
60
140
E
on
E
off
(
mJ
)
80
900
750
120
100
Figure 5: Switching Energy vs. Collector Current
for IGBT Inverter
Figure 6: Reverse Biased Safe Operating Area
for IGBT Inverter
0
200
400
600
800
1000
0200 400 600800 1000 1200
V
CE
˄V˅
1400
RG=1.6Ω
VGE=±15V
T
J
=125°C
I
C
(A)
V
CE
˄V˅
4.0 3.5 3.0 2.5 1.51.00.50
I
C
(A)
T
J
=125°C
2.04.5 5.0
0
900
750
450
300
150
600
GE
V=11V
GE
V= 9V
GE
V=13V
GE
V=15V
GE
V=17V
GE
V=19V
3
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100
Tc (“0)
Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
112
MG12450WB-BN2MM
1200V 450A IGBT Module
Figure 7: Diode Forward Characteristics
for Diode Inverter
V
F
˄V˅
0.4
0 0.8 1.2 1.6 2.4
0
I
F
(
A
)
T
J
=25°C
T
J
=125°C
2.0
900
750
450
300
150
600
E
rec
(
mJ
)
RG˄Ω˅
024 68 10 12 16
20
15
10
5
0
25
45
I
F
=450
A
V
CE
=600V
TJ
=125°C
14
40
35
30
Figure 8: Switching Energy vs. Gate Resistort
for Diode Inverter
ZthJC
(
K/W
)
0.001 0.01 0.11 10
0.001
0.01
1
10
Diode
IGBT
0.1
Rectangular Pulse Duration (seconds)
Figure 9: Transient Thermal Impedance of
Diode and IGBT Inverter
T
C
˄°C˅
100000
10000
1000
100020 40 60 80 100 140
120 160
R
Figure 10: NTC Characteristics
Circuit Diagram
4
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Power Module
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
113
MG12450WB-BN2MM
1200V 450A IGBT Module
Part Numbering System Part Marking System
PRODUCT TYPE
M: Power Module
MODULE TYPE
G: IGBT
CIRCUIT TYPE
WAFER TYPE
PACKAGE TYPE
MG12450
WB
-
B
N2
MM
VOLTAGE RATING
CURRENT RATING
ASSEMBLY SITE
12: 1200V
450: 450A
2x(IGBT+FWD)
LOT NUMBER
Space
reserved
for QR
code
MG12450WB-BN2MM
Dimensions-Package WB
Packing Options
Part Number Marking Weight Packing Mode M.O.Q
MG12450WB-BN2MM MG12450WB-BN2MM 350g Bulk Pack 60
5
The foot pins are in gold / nickel coating
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IGBT MODULE 1200V 600A 1950W WB