MG06200S-BN4MM Datasheet by Littelfuse Inc.

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Power Module
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
140
MG06200S-BN4MM
600V 200A IGBT Module
MG06200S-BN4MM
Features
Applications
High short circuit
capability, self limiting
short circuit current
VCE(sat) with positive
temperature coefficient
Fast switching and short
tail current
Free wheeling diodes
with fast and soft reverse
recovery
Low switching losses
Absolute Maximum Ratings (TC = 25°C, unless otherwise specified)
Symbol Parameters Test Conditions Values Unit
IGBT
VCES Collector - Emitter Voltage TJ=25°C 600 V
VGES Gate - Emitter Voltage ±20 V
ICDC Collector Current TC=25°C 300 A
TC=60°C 200 A
ICM Repetitive Peak Collector Current tp=1ms 400 A
Ptot Power Dissipation Per IGBT 600 W
Diode
VRRM Repetitive Reverse Voltage TJ=25°C 600 V
IF(AV) Average Forward Current TC=25°C 300 A
TC=60°C 200 A
IFRM Repetitive Peak Forward Current tp=1ms 400 A
I2tTJ =125°C, t=10ms, VR=0V 3500 A2s
Module Characteristics (TC = 25°C, unless otherwise specified)
Symbol Parameters Test Conditions Min Typ Max Unit
TJ max Max. Junction Temperature 175 °C
TJ op Operating Temperature -40 150 °C
Tstg Storage Temperature -40 125 °C
Visol Insulation Test Voltage AC, t=1min 3000 V
CTI Comparative Tracking Index 350
Torque Module-to-Sink Recommended (M6) 3 5 N·m
Torque Module Electrodes Recommended (M5) 2.5 5N·m
Weight 160 g
High frequency
switching application
• Medical applications
• Motion/servo control
• UPS systems
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
®
RoHS
Agency Approvals
1
AGENCY AGENCY FILE NUMBER
E71639
% Litleltuse“ ExpemxaADnllzd \ Anxwux Damn
Power Module
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
141
MG06200S-BN4MM
600V 200A IGBT Module
Symbol Parameters Test Conditions Min Typ Max Unit
IGBT
VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=3.2mA 4.9 5.8 6.5 V
VCE(sat)
Collector - Emitter
Saturation Voltage
IC=200A, VGE=15V, TJ=25°C 1.45 V
IC=200A, VGE=15V, TJ=125°C 1. 6 V
ICES Collector Leakage Current VCE=600V, VGE=0V, TJ=25°C 1 mA
VCE=600V, VGE=0V, TJ=125°C 5 mA
IGES Gate Leakage Current VCE=0V,VGE=±15V, TJ=125°C -400 400 nA
RGint Integrated Gate Resistor 2 Ω
Qge Gate Charge VCC=300V, IC=200A , VGE=±15V 2.15 μC
Cies Input Capacitance
VCE=25V, VGE=0V, f =1MHz
13 nF
Cres Reverse Transfer Capacitance 0.38 nF
td(on) Turn - on Delay Time
VCC=300V
IC=200A
RG =2.0Ω
VGE=±15V
Inductive Load
TJ =25°C 150 ns
TJ =125°C 160 ns
trRise Time TJ =25°C 30 ns
TJ =125°C 40 ns
td(off) Turn - off Delay Time TJ =25°C 340 ns
TJ =125°C 370 ns
tfFall Time TJ =25°C 60 ns
TJ =125°C 70 ns
Eon Turn - on Energy TJ =25°C 1 mJ
TJ =125°C 1.55 mJ
Eoff Turn - off Energy TJ =25°C 5.65 mJ
TJ =125°C 6.9 mJ
ISC Short Circuit Current tpsc≤6μS , VGE=15V; TJ=125°C,VCC=360V 1000 A
RthJC Junction-to-Case Thermal Resistance (Per IGBT) 0.25 K/W
Diode
VFForward Voltage IF=200A , VGE=0V, TJ =25°C 1.55 V
IF=200A , VGE=0V, TJ =125°C 1. 5 V
IRRM Max. Reverse Recovery Current IF=200A , VR=300V
diF/dt=-5700A/μs
TJ =125°C
230 A
Qrr Reverse Recovery Charge 17 μC
Erec Reverse Recovery Energy 5.2 mJ
RthJCD Junction-to-Case Thermal Resistance (Per Diode) 0.45 K/W
Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified)
2
% Litleltuse“ ExpemxaADnllzd \ Anxwux Damn
Power Module
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
142
MG06200S-BN4MM
600V 200A IGBT Module
Figure 1: Typical Output Characteristics
IC (A)
VCE˄V˅
TJ=125°C
T
J
=25°C
400
320
240
160
80
0
0 0.4 0.81.2 1.6 2.0 2.4
VGE =15V
Figure 2: Typical Output characteristics
V
GE
˄V˅
0
I
C
(A)
T
J
=125°C
T
J
=25°C
V
CE
=20V
1110 9 7 6 58
400
320
240
160
80
Figure 3: Typical Transfer characteristics
R
G
˄˅
16
8
12
4
00510 25 30
E
on
E
off
(
mJ
)
E
on
E
of
f
V
CC
=300V
I
C
=200A
V
GE
=±15V
T
J
=125°C
20
15 20
Figure 4: Switching Energy vs. Gate Resistor
0 100
I
C
˄A˅
V
CC
=300V
R
G
=2.0
V
GE
=±15V
T
J
=125°C
400300
200
E
of
f
E
on
0
4
8
16
E
on
E
off
(
mJ
)
12
Figure 5: Switching Energy vs. Collector Current Figure 6: Reverse Biased Safe Operating Area
V
CE
˄V˅
0
100
200
300
400
500
0100 200300400 500 600 700
R
G
=2.0
V
GE
=±15V
T
J
=125°C
I
C
(A)
V
CE
˄V˅
4.0 3.5 3.0 2.5 1.51.00.50
I
C
(A)
T
J
=125°C
2.04.5 5.0
0
GE
V=11V
GE
V= 9V
GE
V=13V
GE
V=15V
GE
V=17V
GE
V=19V
400
320
240
160
80
3
% Litleltuse“ ExpemxaADnllzd \ Anxwux Damn n =125'c
Power Module
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
143
MG06200S-BN4MM
600V 200A IGBT Module
Figure 7: Diode Forward Characteristics
I
F
(
A
)
V
F
˄V˅
0.4
0 0.8 1.2 1.6 2.0
0
I
F
(
A
)
T
J
=25°C
T
J
=125°C
400
320
240
160
80
E
(
mJ
)
RG˄˅
02468 12 14 16
4
3
2
1
0
5
6
7
18
10
8
I
F
=200
A
V
CE
=300V
TJ
=125°C
Figure 8: Switching Energy vs. Gate Resistor
E
rec
(
mJ
)
4
3
2
1
0 80
IF (A)
400
320 160
0
5
9
240
7
6
8
RG=2.0
VCE=300V
TJ
=125°C
Figure 9: Switching Energy vs. Forward Current
Rectangular Pulse Duration (seconds)
T
J
=150°C
T
C
=25°C
V
GE
=15V
t
sc
İ10µs
Z
thJC
(K/W)
0.001 0.01 0.1 1 10
0.001
0.01
0.1
1
Diode
IGBT
Figure 10: Transient Thermal Impedance
4
l 4; , «Hrzaxoa a mfi.“ g i I 3: LEFJ :1 3 GO 200
Power Module
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
144
MG06200S-BN4MM
600V 200A IGBT Module
Packing Options
Part Number Marking Weight Packing Mode M.O.Q
MG06200S-BN4MM MG06200S-BN4MM 160g Bulk Pack 100
Part Numbering System Part Marking System
PRODUCT TYPE
M: Power Module
MODULE TYPE
G: IGBT
CIRCUIT TYPE
WAFER TYPE
PACKAGE TYPE
MG06200 S - BN4 MM
VOLTAGE RATING
CURRENT RATING
ASSEMBLY SITE
06: 600V
200: 200A
2x(IGBT+FWD)
Dimensions-Package S
MG06200S-BN4MM
LOT NUMBER
Space
reserved
for QR
code
Circuit Diagram
5

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