2SJ661 Datasheet by ON Semiconductor

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53012 TKIM/N1805QA MSIM TB-00001078 No.8586-1/9
1 : Gate
2 : Drain
3 : Source
TO-262-3L
10.0
5.3
1.27
1.47
0.8
2.542.54
13.08 9.2
7.9
1.2
2.4
1.750.9
3.0
4.5 8.0
1.3
0.5
12 3
1 : Gate
2 : Drain
3 : Source
4 : Drain
TO-263-2L
10.0
5.3
1.27
0.8
2.54 2.54
13.4
9.2
7.9
1.4
1.2
0 to 0.25
2.4
1.750.9
3.0
1.35
0.254
4.5 8.0
1.3
0.5
123
4
1
3
2, 4
J661
LOT No. DL
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
July, 2013
2SJ661
P-Channel Power MOSFET
60V, 38A, 39mΩ, TO-262-3L/TO-263-2L
Features
ON-resistance RDS(on)1=29.5mΩ(typ.) Input capacitance Ciss=4360pF (typ.)
4V drive
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID--38 A
Drain Current (Pulse) IDP PW10μs, duty cycle1% --152 A
Allowable Power Dissipation PD1.65 W
Tc=25°C 65 W
Continued on next page.
Package Dimensions unit : mm (typ) Package Dimensions
unit : mm (typ)
7537-001 7535-001
Ordering number : EN8586A
2SJ661-1E 2SJ661-DL-1E
Product & Package Information
• Package : TO-262-3L • Package : TO-263-2L
JEITA, JEDEC :
TO-262 •
JEITA, JEDEC :
SC-83, TO-263
Minimum Packing Quantity
:
50pcs./magazine •
Minimum Packing Quantity
:
800pcs./reel
Marking Packing Type : DL Electrical Connection
2SJ661
No.8586-2/9
Continued from preceding page.
Parameter Symbol Conditions Ratings Unit
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1 EAS 250 mJ
Avalanche Current *2 IAV --38 A
Note :
*1 VDD=--30V, L=200μH, IAV=--38A (Fig.1)
*2 L200μH, single pulse
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --60 V
Zero-Gate Voltage Drain Current IDSS V
DS=--60V, VGS=0V --1 μA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance | yfs |VDS=--10V, ID=--19A 18 31 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=--19A, VGS=--10V 29.5 39 mΩ
RDS(on)2 ID=--19A, VGS=--4V 40 56 mΩ
Input Capacitance Ciss
VDS=--20V, f=1MHz
4360 pF
Output Capacitance Coss 470 pF
Reverse Transfer Capacitance Crss 335 pF
Turn-ON Delay Time td(on)
See Fig.2
33 ns
Rise Time tr 285 ns
Turn-OFF Delay Time td(off) 295 ns
Fall Time tf195 ns
Total Gate Charge Qg
VDS=--30V, VGS=--10V, ID=--38A
80 nC
Gate-to-Source Charge Qgs 15 nC
Gate-to-Drain “Miller” Charge Qgd 12 nC
Diode Forward Voltage VSD IS=--38A, VGS=0V --1.0 --1.2 V
Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
2SJ661-1E TO-262-3L 50pcs./magazine Pb Free
2SJ661-DL-1E TO-263-2L 800pcs./reel
50Ω
50Ω
RG
0V
--10V VDD
L
2SJ661
D.C.1%
PW=10μs
P.G 50Ω
G
S
D
ID= --19A
RL=1.58Ω
VDD= --30V
VOUT
2SJ661
VIN
0V
--10V
VIN
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
DS e. VDS V65 V65 DS
2SJ661
No.8586-3/9
ID -- VDS ID -- VGS
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
--10
--20
--30
--40
--50
--60
--70
--80
--10
--20
--30
--40
--50
--60
--70
--80
00 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
IT08748 IT08749
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
0
VGS= --3V
--4V
--6V
--10V
Tc=25°C
25°C
25
°
C
--25°C
Tc= --25
°
C
75
°
C
Tc=75°C
VDS= --10V
RDS(on) -- VGS RDS(on) -- Tc
Ciss, Coss, Crss -- VDS
IS -- VSD
SW Time -- ID
Gate-to-Source Voltage, VGS -- V Case Temperature, Tc -- °C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Drain Current, ID -- A
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
100
3
1000
7
5
3
10000
7
5
2
2
10
20
30
40
50
60
70
--0.1 2357
--1.0 2357
--10 2357
--100
0
10
20
30
40
50
60
70
0
10
2
3
100
7
5
3
1000
7
5
2
--50 --25 0 25 50 75 100 125 150--2 --3 --4 --5 --6 --7 --8 --9 --10
IT08750 IT08751
0 --30--10 --15 --20 --25--5
IT08755
IT08753
IT08752
ID= --19A
Tc=75°C
25
°
C
--25°C
ID= --19A, VGS= --4V
ID= --19A, VGS= --10V
f=1MHz
Coss
Ciss
Crss
IT08754
td(off)
tf
td(on)
tr
VDD= --30V
VGS= --10V
1.0
3
2
10
7
5
3
100
7
5
2
--1.5--1.2--0.6--0.3 --0.90
--0.01
--0.1
5
7
3
2
--1.0
5
7
3
2
--10
5
7
3
2
--100
5
7
3
2
--1.0 --10
23 57
--0.1 23 57 --100
23 57
Tc= --25°
C
75
°
C
25°
C
VDS= --10V
Tc=75
°
C
25°
C
--25°
C
VGS=0V
| yfs | -- ID
Forward Transfer Admittance, | yfs | -- S
so so mu m an ac so so mu m m 40
2SJ661
No.8586-4/9
A S O
VGS -- Qg
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
IT08756
0 1020304050607080
0
--2
--4
--6
--8
--9
--1
--3
--5
--7
--10 VDS= --30V
ID= --38A
IT16831
--0.1
--1.0
2
3
2
3
7
5
2
3
7
5
2
3
7
5
--10
--100
--1.0 --10
23 57
--0.1 23 57 --100
23 57
IDP= --152A(PW10μs)
ID= --38A
100μs
1ms
10ms
100ms
DC operation
Operation in
this area is
limited by RDS(on).
10μs
Tc=25°C
Single pulse
PD -- Tc
PD -- Ta
Case Temperature, Tc -- °C
Allowable Power Dissipation, PD -- W
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
IT08758
0
020 40 60 80 100 120
60
70
65
50
140 160
40
30
20
10
IT08735
0
020 40 60 80 100 120
1.65
140 160
0.5
1.0
1.5
2.0
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2SJ661
No.8586-5/9
Taping Specifi cation
2SJ661-DL-1E
m” l u EM“ M 2; mm. dun”; u a. m “mm null mum u L m1 )5 m: m m: Henna} “mun.“ n y L.” .a n m .mmm. MW 2.6
2SJ661
No.8586-6/9
Outline Drawing Land Pattern Example
2SJ661-DL-1E
Mass (g) Unit
1.5
* For reference
mm Unit: mm
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2SJ661
No.8586-7/9
Magazine Specifi cation
2SJ661-1E
2SJ661
No.8586-8/9
Outline Drawing
2SJ661-1E
Mass (g) Unit
1.6
* For reference
mm
2SJ661
PS No.8586-9/9
Note on usage : Since the 2SJ661 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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