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Power Module
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:09/18/14
1
MG12300D-BN2MM
1200V IGBT Family
MG12300D-BN2MM Series 300A Dual IGBT
Features
Applications
• High short circuit
capability, self limiting
short circuit current
• IGBT3 CHIP(Trench+Field
Stop technology)
• VCE(sat) with positive
temperature coefficient
• Fast switching and short
tail current
• Free wheeling diodes
with fast and soft reverse
recovery
• Low switching losses
Absolute Maximum Ratings (TC = 25°C, unless otherwise specified)
Symbol Parameters Test Conditions Values Unit
IGBT
VCES Collector - Emitter Voltage TJ=25°C 1200 V
VGES Gate - Emitter Voltage ±20 V
ICDC Collector Current TC=25°C 480 A
TC=80°C 300 A
ICM Repetitive Peak Collector Current tp=1ms 600 A
Ptot Power Dissipation Per IGBT 1450 W
Diode
VRRM Repetitive Reverse Voltage TJ=25°C 1200 V
IF(AV) Average Forward Current TC=25°C 480 A
TC=80°C 300 A
IFRM Repetitive Peak Forward Current tp=1ms 600 A
I2t TJ =125°C, t=10ms, VR=0V 18000 A2s
Module Characteristics (TC = 25°C, unless otherwise specified)
Symbol Parameters Test Conditions Min Typ Max Unit
TJ max) Max. Junction Temperature 150 °C
TJ op Operating Temperature -40 125 °C
Tstg Storage Temperature -40 125 °C
Visol Insulation Test Voltage AC, t=1min 3000 V
CTI Comparative Tracking Index Module case exposed to 0.1% ammonium
chloride solution per UL and IEC standards 350 V
Torque Module-to-Sink Recommended (M6) 3 5 N·m
Torque Module Electrodes Recommended (M6) 2.5 5N·m
Weight 320 g
• Motor drives
• Inverter
• Converter
• SMPS and UPS
• Welder
• Induction Heating
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
®
RoHS
AGENCY AGENCY FILE NUMBER
E71639
Agency Approvals
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Power Module
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:09/18/14
2
MG12300D-BN2MM
1200V IGBT Family
Symbol Parameters Test Conditions Min Typ Max Unit
IGBT
VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=12mA 5.0 5.8 6.5 V
VCE(sat)
Collector - Emitter
Saturation Voltage
IC=300A, VGE=15V, TJ=25°C 1. 7 V
IC=300A, VGE=15V, TJ=125°C 1. 9 V
ICES Collector Leakage Current VCE=1200V, VGE=0V, TJ=25°C 1mA
VCE=1200V, VGE=0V, TJ=125°C 5mA
IGES Gate Leakage Current VCE=0V,VGE=±15V, TJ=125°C -400 400 μA
RGint Intergrated Gate Resistor 2.5 Ω
Qge Gate Charge VCE=600V, IC=300A , VGE=±15V 2.8 μC
Cies Input Capacitance
VCE=25V, VGE=0V, f =1MHz
21 nF
Cres Reverse Transfer Capacitance 0.85 nF
td(on) Turn - on Delay Time
VCC=600V
IC=300A
RG =2.4Ω
VGE=±15V
Inductive Load
TJ =25°C 160 ns
TJ =125°C 170 ns
trRise Time TJ =25°C 40 ns
TJ =125°C 45 ns
td(off) Turn - off Delay Time TJ =25°C 450 ns
TJ =125°C 520 ns
tfFall Time TJ =25°C 100 ns
TJ =125°C 160 ns
Eon Turn - on Energy TJ =25°C 16.5 mJ
TJ =125°C 25 mJ
Eoff Turn - off Energy TJ =25°C 24.5 mJ
TJ =125°C 37 mJ
ISC Short Circuit Current tpsc≤10μS , VGE=15V 1200 A
TJ=125°C,VCC=900V
RthJC
Junction-to-Case Thermal
Resistance (Per IGBT) 0.085 K/W
Diode
VFForward Voltage IF=300A , VGE=0V, TJ =25°C 1.65 V
IF=300A , VGE=0V, TJ =125°C 1.65 V
IRRM Max. Reverse Recovery Current IF=300A , VR=600V 270 A
Qrr Reverse Recovery Charge diF/dt=-6000A/μs 56 μC
Erec Reverse Recovery Energy TJ=125°C 26 mJ
RthJCD
Junction-to-Case Thermal
Resistance (Per Diode) 0.15 K/W
Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified)
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©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:09/18/14
3
MG12300D-BN2MM
1200V IGBT Family
Figure 1: Typical Output Characteristics
I
C
(A)
V
CE
˄V˅
T
Vj
=125°C
T
Vj
=25°C
600
500
200
100
0
0 0.5 1.0 1.5 2.0 2.5
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GE
=15V
3.0
300
400
Figure 2: Typical Output Characteristics
Figure 3: Typical Transfer characteristics Figure 4: Switching Energy vs. Gate Resistor
Figure 5: Switching Energy vs. Collector Current Figure 6: Reverse Biased Safe Operating Area
V
GE=19V
V
GE=17V
V
GE=15V
V
GE=13V
V
GE=11V
V
GE=9V
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Power Module
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:09/18/14
4
MG12300D-BN2MM
1200V IGBT Family
Figure 7: Diode Forward Characteristics Figure 8: Switching Energy vs. Gate Resistort
Figure 9: Switching Energy vs. Forward Current Figure 10: Transient Thermal Impedance
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MG12300D-BN2MM Luna—fl
Power Module
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:09/18/14
5
MG12300D-BN2MM
1200V IGBT Family
Packing Options
Part Number Marking Weight Packing Mode M.O.Q
MG12300D-BN2MM MG12300D-BN2MM 320g Bulk Pack 60
Part Numbering System Part Marking System
PRODUCT TYPE
M: Power Module
MODULE TYPE
G: IGBT
CIRCUIT TYPE
WAFER TYPE
PACKAGE TYPE
MG12300D-BN2MM
VOLTAGE RATING
CURRENT RATING
ASSEMBLY SITE
12: 1200V
300: 300A D: Package D
B: 2x(IGBT+FWD)
Dimensions-Package D Circuit Diagram and Pin Assignment
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