BGU8053X Datasheet by NXP USA Inc.

BGU8053

Low noise high linearity amplifier

Rev. 7 — 17 July 2017 Product data sheet

1 General description

The BGU8053 is, also known as the BTS1001H, a low noise high linearity amplifier

for wireless infrastructure applications, equipped with fast shutdown to support TDD

systems. The LNA has a high input and output return loss and is designed to operate

between 2 GHz and 6 GHz. It is housed in a 2 mm × 2 mm × 0.75 mm 8-terminal plastic

thin small outline package. The LNA is ESD protected on all terminals.

2 Features and benefits

•Low noise performance: NF = 0.56 dB

•High linearity performance: IP3O = 36 dBm

•High input return loss > 12 dB

•High output return loss > 20 dB

•Unconditionally stable up to 20 GHz

•Programmable bias current (via resistor)

•Small 8-terminal leadless package 2 mm × 2 mm × 0.75 mm

•ESD protection on all terminals

•Moisture sensitivity level 1

•Fast shut down to support TDD systems

•3 V to 5 V single supply

3 Applications

•Wireless infrastructure

•Low noise and high linearity applications

•LTE, W-CDMA, CDMA, GSM

•General-purpose wireless applications

•TDD or FDD systems

•Suitable for small cells

BGU8053 R~biss = speciﬁed Figure 16 Table 9 Table 2. Ordering information

NXP Semiconductors BGU8053

Low noise high linearity amplifier

Product data sheet Rev. 7 — 17 July 2017

2 / 16

4 Quick reference data

Table 1. Quick reference data

f = 2500 MHz; VCC = 5 V; Tamb = 25 °C; input and output 50 Ω; R~bias = 5.1 kΩ; unless otherwise specified. All RF

parameters are measured in an application board as shown in Figure 16 with components listed in Table 9 optimized for

f = 2500 MHz.

Symbol Parameter Conditions Min Typ Max Unit

on state 36 48 60 mAICC supply current

off state - 2.8 - mA

on state 17 18.5 20 dBGass associated gain

off state - -23.5 - dB

NF noise figure [1] - 0.56 0.75 dB

PL(1dB) output power at 1 dB gain compression - 18 - dBm

IP3Ooutput third-order intercept point 2-tone; tone spacing = 1 MHz;Pi = -15

dBm per tone

32 36 - dBm

[1] Connector and Printed-Circuit Board (PCB) losses have been de-embedded.

5 Ordering information

Table 2. Ordering information

PackageType number

Name Description Version

BGU8053 HWSON8 plastic thermal enhanced very very thin small outline package; no

leads; 8 terminals; body 2 × 2 × 0.75 mm

SOT1327-1

6 Block diagram

aaa-021372

RFIN

VBIAS

n.c.

i.c.

RFOUT

n.c.

SHDN

i.c.

BIAS

Figure 1. Block diagram

BGU8053 mrmlnal 1 Transparent lop View UT Table 3. Pin description

NXP Semiconductors BGU8053

Low noise high linearity amplifier

Product data sheet Rev. 7 — 17 July 2017

3 / 16

7 Pinning information

7.1 Pinning

Transparent top view

terminal 1

index area

aaa-009791

i.c.

SHDN

RF_OUT

VBIAS

i.c.

n.c.

RF_IN

Figure 2. Pin configuration

7.2 Pin description

Table 3. Pin description

Symbol Pin Description

VBIAS 1 bias voltage

RF_IN 2 RF input

n.c. 3 not connected

i.c. 4, 5, 8 internally connected. Can be grounded or left open in the application

SHDN 6 shutdown

RF_OUT 7 RF output

GND exposed die pad ground

BGU8053 Table 5. Recommended operating conditions Table 6. Thermal characteristics

NXP Semiconductors BGU8053

Low noise high linearity amplifier

Product data sheet Rev. 7 — 17 July 2017

4 / 16

8 Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCC supply voltage - 6 V

Vctrl(sd) shutdown control voltage - 3 V

ICC supply current - 85 mA

Pi(RF)CW continuous waveform RF input power - 20 dBm

Tstg storage temperature -40 +150 °C

Tjjunction temperature - 150 °C

P power dissipation Tcase ≤ 125 °C [1] - 510 mW

Human Body Model (HBM) According to

ANSI/ESDA/JEDEC standard JS-001-2010

- 1.5 kVVESD electrostatic discharge voltage

Charged Device Model (CDM); According

to JEDEC standard 22-C101B

- 2 kV

[1] Case is ground solder pad.

9 Recommended operating conditions

Table 5. Recommended operating conditions

Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage 3.3 5 5.25 V

Z0characteristic impedance - 50 - Ω

Tcase case temperature -40 - +85 °C

10 Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-case) thermal resistance from junction to case [1] [2] 50 K/W

[1] Case is ground solder pad.

[2] Thermal resistance measured using infrared measurement technique, device mounted on application board and placed in still air.

BGU8053 d output 5!] otherwise n Figure 16 Table 9 output 50 1) otherwise Figure 16 Table 9

NXP Semiconductors BGU8053

Low noise high linearity amplifier

Product data sheet Rev. 7 — 17 July 2017

5 / 16

11 Characteristics

Table 7. Characteristics

f = 2500 MHz; VCC = 5 V; Tamb = 25 °C; input and output 50 Ω; Rbias = 5.1 kΩ; unless otherwise specified. All RF parameters

are measured in an application board as shown in Figure 16 with components listed in Table 9 optimized for f = 2500 MHz

Symbol Parameter Conditions Min Typ Max Unit

on state 36 48 60 mAICC supply current

off state - 2.8 - mA

on state 17 18.5 20 dBGass associated gain

off state - -23.5 - dB

NF noise figure [1] - 0.56 0.75 dB

PL(1dB) output power at

1 dB gain compression

- 18 - dBm

2-tone; tone spacing = 1 MHz;Pi = -15 dBm

per tone

32 36 - dBmIP3Ooutput third-order intercept point

2-tone; tone spacing = 1 MHz;Pi = -15 dBm

per tone

[2] 30 34 - dBm

on state - 12.2 - dBRLin input return loss

off state - 6.3 - dB

RLout output return loss - 28.0 - dB

ISL isolation - 22.0 - dB

ts(pon) power-on settling time Pi = -20 dBm; SHDN (pin 6) from HIGH to

LOW

[2] - 1.4 - μs

ts(poff) power-off settling time Pi = -20 dBm; SHDN (pin 6) from LOW to

HIGH

[2] - 0.4 - μs

K Rollett stability factor both on state and off state up to f = 20 GHz 1 - -

Rpd(SHDN) pull-down resistance on pin SHDN - 30 - kΩ

[1] Connector and Printed-Circuit Board (PCB) losses have been de-embedded.

[2] For TDD systems where fast switching is required, the value of C1 and C2 should be changed to 100 pF.

Table 8. Shutdown control

VCC = 5 V; Tamb = 25 °C; input and output 50 Ω; Rbias = 5.1 kΩ; unless otherwise specified. All RF parameters are measured

in an application board as shown in Figure 16 with components listed in Table 9 optimized for f = 2500 MHz

State Vctrl(sd) [1] Unit

on state ≤ 0.6 V

off state ≥ 1.2 V

[1] Voltage on pin 6 (SHDN).

BGU8053 3557010275 5357019275 3557010255 5357019255

NXP Semiconductors BGU8053

Low noise high linearity amplifier

Product data sheet Rev. 7 — 17 July 2017

6 / 16

11.1 Graphics

aaa-010275

2 2.4 2.8 3.2 3.6 4

f (GHz)

(dB)(dB)

(1)(1)

(2)(2)

(3)(3)

VCC = 5 V; ICC = 48 mA.

(1) Tamb = -40°C

(2) Tamb = +25°C

(3) Tamb = +85°C

Figure 3. Power gain as a function of frequency; typical

values

aaa-010276

2 2.4 2.8 3.2 3.6 4

f (GHz)

(dB)(dB)

(3)(3)

(2)(2)

(1)(1)

VCC = 5 V; Tamb = 25°C.

(1) ICC = 30 mA

(2) ICC = 45 mA

(3) ICC = 60 mA

Figure 4. Power gain as a function of frequency; typical

values

aaa-010285

2 2.4 2.8 3.2 3.6 4

0.4

0.8

1.2

1.6

f (GHz)

NFNF

(dB)(dB)

(1)(1)

(2)(2)

(3)(3)

VCC = 5 V;ICC = 48 mA.

(1) Tamb = -40°C

(2) Tamb = +25°C

(3) Tamb = +85°C

Figure 5. Noise figure as a function of frequency; typical

values

aaa-010286

2 2.4 2.8 3.2 3.6 4

0.2

0.4

0.6

0.8

1.2

f (GHz)

NFNF

(dB)(dB)

(3)(3)

(2)(2)

(1)(1)

VCC = 5 V; Tamb = 25°C.

(1) ICC = 30 mA

(2) ICC = 45 mA

(3) ICC = 60 mA

Figure 6. Noise figure as a function of frequency; typical

values

BGU8053 5337910277 5357019275 5337009929 5357009939

NXP Semiconductors BGU8053

Low noise high linearity amplifier

Product data sheet Rev. 7 — 17 July 2017

7 / 16

aaa-010277

2 2.4 2.8 3.2 3.6 4

-20

-15

-10

-5

f (GHz)

RLin

(dB)(dB)

(3)(3)

(2)(2)

(1)(1)

VCC = 5 V; ICC = 48 mA.

(1) Tamb = -40°C

(2) Tamb = +25°C

(3) Tamb = +85°C

Figure 7. Input return loss as a function of frequency;

typical values

aaa-010278

2 2.4 2.8 3.2 3.6 4

-40

-30

-20

-10

f (GHz)

RLout

(dB)(dB)

(3)(3)

(2)(2)

(1)(1)

VCC = 5 V; ICC = 48 mA.

(1) Tamb = -40°C

(2) Tamb = +25°C

(3) Tamb = +85°C

Figure 8. Output return loss as a function of frequency;

typical values

aaa-009929

0 0.5 1 1.5 2 2.5 3 3.5 4

-40

-20

f (GHz)

s-parss-pars

(dB)(dB)

S11

S21

S12

S22

VCC = 5 V; Tamb = 25°C; ICC = 48 mA.

Figure 9. Wideband S-parameters as function of

frequency; typical values

aaa-009930

0 4 8 12 16 20

f (GHz)

(3)(3)

(2)(2)

(1)(1)

VCC = 5 V; ICC = 48 mA.

(1) Tamb =- 40°C

(2) Tamb = +25°C

(3) Tamb = +85°C

Figure 10. Rollett stability factor as a function of

frequency; typical values

BGU8053 3537099931 3357009932 5537009933 5537909934

NXP Semiconductors BGU8053

Low noise high linearity amplifier

Product data sheet Rev. 7 — 17 July 2017

8 / 16

aaa-009931

1.9 2.2 2.5 2.8 3.1 3.4 3.7 4

f (GHz)

IP3O

(dBm)(dBm)

(3)(3)

(2)(2)

(1)(1)

VCC = 5 V; Pi= -15 dBm per tone; ICC = 48 mA.

(1) Tamb = -40°C

(2) Tamb = +25°C

(3) Tamb = +85°C

Figure 11. Output third-order intercept point as a

function of frequency; typical values

aaa-009932

30 35 40 45 50 55 60

ICC (mA)

IP3O

(dBm)(dBm)

(1)(1)

(2)(2)

(3)(3)

VCC = 5 V; Pi = -15 dBm per tone; Tamb = 25°C.

(1) f = 2000 MHz

(2) f = 2500 MHz

(3) f = 3000 MHz

Figure 12. Output third-order intercept point as a

function of supply current; typical values

aaa-009933

1.9 2.2 2.5 2.8 3.1 3.4 3.7 4

f (GHz)

PL(1dB)

(dBm)(dBm)

(3)(3)

(2)(2)

(1)(1)

VCC = 5 V; ICC = 48 mA.

(1) Tamb = -40°C

(2) Tamb = +25°C

(3) Tamb = +85°C

Figure 13. Output power at 1 dB gain compression as a

function of frequency; typical values

aaa-009934

30 35 40 45 50 55 60

ICC (mA)

PL(1dB)

(dBm)(dBm)

(1)(1)

(2)(2)

(3)(3)

VCC = 5 V; Tamb = 25°C.

(1) f = 2000 MHz

(2) f = 2500 MHz

(3) f = 3000 MHz

Figure 14. Output power at 1 dB gain compression as a

function of supply current; typical values

BGU8053 ass-020454

NXP Semiconductors BGU8053

Low noise high linearity amplifier

Product data sheet Rev. 7 — 17 July 2017

9 / 16

Rbias (kΩ)

1 102

aaa-020454

lcc

(mA)

(1)

(2)

(3)

(4)

(5)

Tamb = 25°C

(1) VCC = 3.0 V

(2) VCC = 3.3 V

(3) VCC = 4.0 V

(4) VCC = 4.5 V

(5) VCC = 5 V

Figure 15. ICC as a function of Rbias, typical values

BGU8053 Table 9 4|—| E gnu-1799774 See ﬁgure 16

NXP Semiconductors BGU8053

Low noise high linearity amplifier

Product data sheet Rev. 7 — 17 July 2017

10 / 16

12 Application information

aaa-009774

(sd

)

C2C1

Rbias

RFin RFout

See Table 9 for a list of components.

Figure 16. Schematic of application board

Table 9. List of components

See figure 16 for schematics.

Component Description Value Remarks

100 nFC1, C2 capacitor

100 pF recommended for TDD systems

C3, C5 capacitor 10 pF

C4 capacitor 10 nF

L1 inductor 15 nH

R1 resistor 10 Ω

5.1 kΩ VCC = 5 VRbias resistor

2.3 kΩ VCC = 3.3 V

BGU8053 ﬁgure 16 Table 9 cc ﬁgure 16 Table 9

NXP Semiconductors BGU8053

Low noise high linearity amplifier

Product data sheet Rev. 7 — 17 July 2017

11 / 16

Table 10. Typical performance BGU8053 application board VCC = 5 V

All RF parameters are measured at the application board as shown in figure 16. With the components as listed in Table 9

while optimized for: f = 2500 MHz, VCC = 5 V, ICC = 48 mA and Tamb = 25 °C.

f (MHz)Symbol Parameter Conditions

2000 2300 2500 2700 3000 3400 3500 3800

G gain 20.2 19.0 18.3 17.6 16.6 15.4 15.1 14.2

RLin input return loss 11.0 11.8 12.3 12.6 13.3 14.0 13.8 14.9

RLout output return loss 30.1 28.9 28.7 27.1 23.4 18.2 17.3 14.7

PL(1dB) output power at 1 dB

gain compression

18.5 18.6 18.2 18.1 18.2 16.9 16.2 14.9

[1] 35.5 35.4 35.4 35.2 34.3 33.4 33.3 32.5IP3Ooutput third-order

intercept point [1] [2] 34.8 36.3 36.3 36.4 35.6 32.5 33.1 31.9

NF noise figure [3] 0.52 0.59 0.63 0.68 0.67 0.76 0.78 0.87

[1] 2-Tone; tone spacing = 1 MHz, Po = 5 dBm per tone.

[2] For applications where fast switching is required, the value of C1 and C2 should be changed to 100 pF.

[3] Connector and board losses not de-embedded.

Table 11. Typical performance BGU8053 application board VCC = 3.3 V

All RF parameters measured at application board shown in figure 16. With the components as listed in Table 9 while

optimized for 2500 MHz, VCC = 3.3 V, ICC = 48 mA, Tamb =25°C

f (MHz)Symbol Parameter Conditions

2000 2300 2500 2700 3000 3400 3500 3800

G gain 20.2 18.9 18.1 17.4 16.4 15.3 15.0 14.1

RLin input return loss 11.3 12.1 12.4 14.1 13.6 13.7 15.0 15.3

RLout output return loss 32.9 29.5 27.8 27.5 23.4 18.6 17.7 15.4

PL(1dB) output power at

1 dB gain

compression

10.0 11.4 12.4 12.2 12.4 14.0 12.8 12.7

[1] 30.5 30.3 28.8 29.3 27.8 29.5 27.9 26.1IP3Ooutput third-order

intercept point [1] [2] 31.0 30.7 28.8 29.3 27.4 29.4 27.6 26.0

NF noise figure [3] 0.55 0.58 0.60 0.63 0.69 0.78 0.80 0.89

[1] 2-Tone; tone spacing = 1 MHz, Po = 5 dBm per tone.

[2] For TDD systems C1 and C2 have to be 100 pF.

[3] Connector and board losses not de-embedded.

BGU8053 stoua: plastic mennal enhanced very very min small ouuine package; no leads; ,f D \ \ e; an o A a D + Q (,0 PD 1:, III \ ‘ ‘r: ‘ “Egg E}@ W

NXP Semiconductors BGU8053

Low noise high linearity amplifier

Product data sheet Rev. 7 — 17 July 2017

12 / 16

13 Package outline

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT1327-1 MO-229

sot1327-1_po

12-04-11

12-04-15

Unit

max

nom

min

0.80

0.75

0.70

0.05

0.03

0.00

0.2

2.05

2.00

1.95

1.25

1.20

1.15

2.05

2.00

1.95

0.5 1.5

0.35

0.05

Dimensions (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.

HWSON8: plastic thermal enhanced very very thin small outline package; no leads;

8 terminals; body 2 x 2 x 0.75 mm SOT1327-1

A1b

0.30

0.25

0.20

c D(1) DhE(1) Eh

0.65

0.60

0.55

0.40

0.35

0.30

e e1K L v

0.1

0.05

y y1

0.1

0 1 mm

scale

terminal 1

index area

terminal 1

index area 1/2 e

1 4

8 5

detail X

BD A

AC Bv

Figure 17. Package outline SOT1327-1 (HWSON8)

BGU8053 Table 12. Abbreviations Table 13. Revision history Section 11.1 Table 4 Table 5 "Recommended operaling oondilions" Section 1 "General desoriplion" Section 2 "Fealures and beneﬂ " Figure 1 "Block diagram" on page Z An additional curve added Fiqure "Oulnul Dower al 1 dB qain compression as a luno1ion ol supply current' apical values" on page 8 Rbias Table 9 "List of comgonents" Table 11 "Tvnioal Derlormanoe BGU8053 applioalion board VCC = 3.3 V“ on Daqe 11

NXP Semiconductors BGU8053

Low noise high linearity amplifier

Product data sheet Rev. 7 — 17 July 2017

13 / 16

14 Abbreviations

Table 12. Abbreviations

Acronym Description

CDMA Code Division Multiple Access

ESD ElectroStatic Discharge

FDD Frequency-Division Duplexing

GSM Global System for Mobile Communication

LNA Low Noise Amplifier

LTE Long-Term Evolution

RF Radio Frequency

TDD Time-Division Duplexing

W-CDMA Wideband Code Division Multiple Access

15 Revision history

Table 13. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BGU8053 v.7 201707017 Product data sheet - BGU8053 v.6

Modifications: •Section 11.1 has been changed

BGU8053 v.6 20170608 Product data sheet - BGU8053 v.5

Modifications: •Table 4: the maximum value of VESD has been changed into 1.5 kV

BGU8053 v.5 20170502 Product data sheet - BGU8053 v.4

Modifications: •Table 5 "Recommended operating conditions": the minimum value of VCC has been changed into

3.3 V

BGU8053 v.4 20170120 Product data sheet - BGU8053 v.3

Modifications: •Section 1 "General description": added BTS1001H according to our new naming convention

BGU8053 v.3 20160418 Product data sheet - BGU8053 v.2

Modifications: •3 V to 5 V single supply added to Section 2 "Features and benefits"

•Added Figure 1 "Block diagram" on page 2

•An additional curve added Figure "Output power at 1 dB gain compression as a function of supply

current; typical values" on page 8

•Added remark to Rbias in Table 9 "List of components"

•Added Table 11 "Typical performance BGU8053 application board VCC = 3.3 V" on page 11

BGU8053 v.2 20131230 Product data sheet - BGU8053 v.1

Modifications: •Table 4 on page 3: The maximum value for Vctrl(sd) has been corrected to 3 V.

BGU8053 v.1 20131127 Product data sheet - -

BGU8053 ince lms dacumem w hm llwww nxgmm

NXP Semiconductors BGU8053

Low noise high linearity amplifier

Product data sheet Rev. 7 — 17 July 2017

14 / 16

16 Legal information

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product

development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple

devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

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BGU8053

NXP Semiconductors BGU8053

Low noise high linearity amplifier

Product data sheet Rev. 7 — 17 July 2017

15 / 16

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

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tested in accordance with automotive testing or application requirements.

NXP Semiconductors accepts no liability for inclusion and/or use of non-

automotive qualified products in automotive equipment or applications. In

the event that customer uses the product for design-in and use in automotive

applications to automotive specifications and standards, customer (a) shall

use the product without NXP Semiconductors’ warranty of the product for

such automotive applications, use and specifications, and (b) whenever

customer uses the product for automotive applications beyond NXP

Semiconductors’ specifications such use shall be solely at customer’s own

risk, and (c) customer fully indemnifies NXP Semiconductors for any liability,

damages or failed product claims resulting from customer design and use

of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

16.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

BGU8053

NXP Semiconductors BGU8053

Low noise high linearity amplifier

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section 'Legal information'.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 17 July 2017

Document number:

Contents

1 General description ............................................ 1

2 Features and benefits .........................................1

3 Applications .........................................................1

4 Quick reference data .......................................... 2

5 Ordering information .......................................... 2

6 Block diagram ..................................................... 2

7 Pinning information ............................................ 3

7.1 Pinning ............................................................... 3

7.2 Pin description ................................................... 3

8 Limiting values ....................................................4

9 Recommended operating conditions ................ 4

10 Thermal characteristics ......................................4

11 Characteristics .................................................... 5

11.1 Graphics .............................................................6

12 Application information ....................................10

13 Package outline .................................................12

14 Abbreviations .................................................... 13

15 Revision history ................................................ 13

16 Legal information .............................................. 14

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