MCO50-16IO1 Datasheet by IXYS

Single Thyristor “X E72673

MCO50-16io1

Single Thyristor

Thyristor

3 1/4

2

Part number

MCO50-16io1

Backside: isolated

TAV

T

V V1,2

RRM

57

1600

=

V=V

I=A

Features / Advantages: Applications: Package:

● Thyristor for line frequency

● Planar passivated chip

● Long-term stability

● Line rectifying 50/60 Hz

● Softstart AC motor control

● DC Motor control

● Power converter

● AC power control

● Lighting and temperature control

SOT-227B (minibloc)

● Industry standard outline

● RoHS compliant

● Epoxy meets UL 94V-0

● Base plate: Copper

internally DCB isolated

● Advanced power cycling

● Isolation Voltage: V~

3000

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and

the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The

information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns

the specific application of your product, please contact the sales office, which is responsible for you.

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.

Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend

- to perform joint risk and quality assessments;

- the conclusion of quality agreements;

- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.

Terms Conditions of usage:

IXYS reserves the right to change limits, conditions and dimensions. 20150827bData according to IEC 60747and per semiconductor unless otherwise specified

L-I IXYS moose-15m Symbol Delinikion Condikions min. lyp. max. iUniI

MCO50-16io1

V = V

kA²s

Symbol

Definition

Ratings

typ.

max.

I

V

IA

V

T

1,27

R0,72 K/W

min.

57

VV

50T = 25°C

VJ

T = °C

VJ

mA3V = V

T = 25°C

VJ

I = A

T

V

T = °C

C

80

P

tot

170 WT = 25°C

C

50

1600

forward voltage drop

total power dissipation

Conditions

Unit

1,53

T = 25°C

VJ

125

V

T0

V0,88T = °C

VJ

150

r

T

6mΩ

V1,20T = °C

VJ

I = A

T

V

50

1,50

I = A100

threshold voltage

slope resistance for power loss calculation only

µA

125

VV1600T = 25°C

VJ

IA90

P

GM

Wt = 30 µs 10

max. gate power dissipation

P

T = °C

C

150

Wt = 1

P

GAV

W0,5

average gate power dissipation

C

J

32

junction capacitance

V = V400 T = 25°Cf = 1 MHz

RVJ

pF

I

TSM

t = 10 ms; (50 Hz), sine T = 45°C

VJ

max. forward surge current

T = °C

VJ

150

I²t T = 45°C

value for fusing

T = °C150

V = 0 V

R

V = 0 V

R

V = 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

thJC

thermal resistance junction to case

T = °C

VJ

150

740

800

1,99

1,93

A

630

680

2,74

2,66

1600

300 µs

RMS forward current

T(RMS)

TAV

180° sine

average forward current

(di/dt)

cr

A/µs

100repetitive, I =T

VJ

= 150 °C; f = 50 Hz

critical rate of rise of current

V

GT

gate trigger voltage

V = 6 V T = °C25

(dv/dt) T = 150°C

critical rate of rise of voltage

A/µs500

V/µs

t = µs;

I A; V = ⅔ V

R = ∞; method 1 (linear voltage rise)

VJ

DVJ

150 A

T

P

G

= 0,3

di /dt A/µs;

G

=0,3

DRM

cr

V = ⅔ V

DRM

GK

1000

1,4 V

T = °C-40

VJ

I

GT

gate trigger current

V = 6 V T = °C25

DVJ

80 mA

T = °C-40

VJ

1,6 V

200 mA

V

GD

gate non-trigger voltage

T = °C

VJ

0,2 V

I

GD

gate non-trigger current

5 mA

V = ⅔ V

D DRM

150

latching current

T = °C

VJ

450 mA

I

L

25t µs

p

=10

I A;

G

= 0,3 di /dt A/µs

G

= 0,3

holding current

T = °C

VJ

100 mA

I

H

25V = 6 V

D

R = ∞

GK

gate controlled delay time

T = °C

VJ

2 µs

t

gd

25

I A;

G

= 0,3 di /dt A/µs

G

= 0,3

V = ½ V

D DRM

turn-off time

T = °C

VJ

150 µs

t

q

di/dt = A/µs10 dv/dt = V/µs15

V =

R

100 V; I A;

T

= 50 V = ⅔ V

DRM

tµs

p

= 200

non-repet., I = 50 A

T

125

R

thCH

0,20

thermal resistance case to heatsink

K/W

Thyristor

1700

RRM/DRM

RSM/DSM

max. non-repetitive reverse/forward blocking voltage

max. repetitive reverse/forward blocking voltage

R/D

reverse current, drain current

T

R/D

200

IXYS reserves the right to change limits, conditions and dimensions. 20150827bData according to IEC 60747and per semiconductor unless otherwise specified

_I IXYS moose-15:01 SOT-227B (minibloc) Symbol Delinikion Condiﬁons min. lyp. max. iUni! n 1 Product Marking _-_ _-_ M II II T T

MCO50-16io1

1)

I

RMS

is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product

with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.

Ratings

abcdZyyww

XXXXX

Product Marking

Logo

Part No.

DateCode

Assembly Code

Assembly Line

®

Package

T

op

°C

M

D

Nm1,5

mounting torque

1,1

T

VJ

°C150

virtual junction temperature

-40

Weight g30

Symbol

Definition

typ.

max.

min.

Conditions

operation temperature

Unit

M

T

Nm1,5

terminal torque

1,1

VV

t = 1 second

V

t = 1 minute

isolation voltage

mm

10,5 3,2

8,6 6,8

d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current

150 A

per terminal

125-40

terminal to terminal

SOT-227B (minibloc)

Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering

1)

50/60 Hz, RMS; I ≤ 1 mA

ISOL

MCO50-16io1 500598Tube 10MCO50-16io1Standard

3000

ISOL

T

stg

°C150

storage temperature

-40

2500

threshold voltage

V0,88

mΩ

V

0 max

R

0 max

slope resistance *

4,1

Equivalent Circuits for Simulation

T =

VJ

I

V

0

R

0

Thyristor

150 °C

* on die level

IXYS reserves the right to change limits, conditions and dimensions. 20150827bData according to IEC 60747and per semiconductor unless otherwise specified

MIIIWEBY Imna m lm m rm 31.50 31 BB 1 240 1.255 7.80 8 20 0 307 0.323 4.00 4.29 0131 0.100 4.05 4 25 0101 0.155 4.05 4 25 0101 0.155 14.51 15.11 087 0555 30,12 30 30 1 186 1,153 37.80 38 23 1.488 1.505 11.80 12.22 0460 0401 8.52 5 00 0351 0.378 0.74 0 B4 0 025 0.033 12.50 13.10 0402 0.510 25.15 25 42 0 550 1.001 1.55 213 0 077 0.084 4.05 6.20 0105 0244 26.54 26 50 1 045 1 055 3.54 4.42 0155 0167 4.55 4.05 0170 0101 24,55 25 25 0508 0 554 -0 05 010 -0.002 0.004 3.20 5.50 0125 0.217 15.81 21 DB 0780 0.830 2 50 2 70 0058 0.100 J Nuzm DIN 9134 Lens Head - K - Screw MM 2 0m 7985 E N§

MCO50-16io1

3 1/4

2

Outlines SOT-227B (minibloc)

IXYS reserves the right to change limits, conditions and dimensions. 20150827bData according to IEC 60747and per semiconductor unless otherwise specified

L-I IXYS moose-15m

MCO50-16io1

0,01 0,1 1

300

400

500

600

0,5 1,0 1,5

0

20

40

60

80

100

1

20

1 10 100 1000 10000

0,0

0,2

0,4

0,6

0,8

I

TSM

[A]

I

T

[

A]

V

T

[V]

t [ms]

Z

thJC

[K/W]

2 3 4 5 6 7 8 9 011

0

500

1000

1500

2000

2500

3

0

00

I

2

t

[A

2

s]

t [ms]

I

T(AV)M

[A]

T

C

[°C]

0 25 50 75 100 125 150

0

20

40

60

80

100

Fig. 1 Forward characteristics Fig. 3 I

2

t versus time (1-10 ms)

t [s]

Fig. 6 Max. forward current

at case temperature

Fig. 2 Surge overload current

Fig. 8 Transient thermal impedance junction to case

T

VJ

= 25°C

T

VJ

= 125°C

T

VJ

= 45°C

50 Hz, 80% V

RRM

T

VJ

= 125°C

T

VJ

= 45°C

V

R

= 0 V

125°C

150°C

0 20 40 60

0

20

40

60

80

100

I

T(AV)

[A]

P

(AV)

[W]

Fig. 7a Power dissipation versus direct output current

Fig. 7b and ambient temperature

0 50 100 150

T

amb

[°C]

dc =

1

0.5

0.4

0.33

0.17

0.08

10 100 1000

1

10

100

1000

1 10 100 1000 10000

0,1

1

10

I

G

[mA]

V

G

[V]

4: P

GAV

= 0.5 W

5: P

GM

= 1 W

6: P

GM

= 10 W

t

gd

[µs]

I

G

[mA]

typ. Limit

T

VJ

= 125°C

Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time

1: I

GD

, T

VJ

= 150°C

2: I

GT

, T

VJ

= 25°C

3: I

GT

, T

VJ

= -40°C

dc =

1

0.5

0.4

0.33

0.17

0.08

R

thHA

0.4

0.6

0.8

1.0

2.0

4.0

R

thi

[K/W] t

i

[s]

0.072 0.011

0.058 0.001

0.141 0.030

0.164 0.350

0.285 0.285

6

5

4

3

2

1

Thyristor

IXYS reserves the right to change limits, conditions and dimensions. 20150827bData according to IEC 60747and per semiconductor unless otherwise specified

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