Devices Qualified Level
MAXIMUM RATINGS
Ra ‘
T(
Tu!
THERMAL CHARACTERISTICS
Characleris
Symbol Mam L'nil
Rem
ELECTRICAL CHARACTERISTICS (Tc = +25 C unless otherwise noted)
\ Characlen ~ \ Svmlml \ Min Max Unit
OFF CHARACTERISTICS
Ir
N.—
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/253
Devices
Qualified Level
2N930
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Emitter Voltage VCEO 45 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current IC 30 mAdc
Total Power Dissipation @ TA = +250C(1)
@ TC = +250C(2) PT 300
600 mW
Operating & Storage Junction Temperature Range TJ, Tstg -55 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case RθJC 97 0C/W
1) Derate linearly 2.0 mW/0C above TA = +250C
2) Derate linearly 4.0 mW/0C above TC = +250C
TO- 18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc V(BR)CEO 45 Vdc
Collector-Base Cutoff Current
VCB = 60 Vdc
VCB = 45 Vdc
ICBO
10
10
µAdc
ηAdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
VEB = 5.0 Vdc
IEBO
10
5.0
µAdc
ηAdc
Collector-Emitter Cutoff Current
VCE = 45 Vdc ICES
2.0 ηAdc
Collector-Base Cutoff Current
VCE = 5.0 Vdc ICEO
2.0 ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
ELECTRICAL CHARACTERISTICS (con’l)
\ Characterislms
2N930, JAN SERIES
Symh0l
Min.
Max.
Unit
0N CHARACTERISTICS
Ir Vrg
It In
It In
DYNAMIC CHARACTERISTICS
It It VrE
Ir Vn:
Vra IE
Vra 1:
< n="" a="" n7="" vx="" m="">2N930, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 10 µAdc, VCE = 5.0 Vdc
IC = 500 µAdc, VCE = 5.0 Vdc
IC = 10 mAdc, VCE = 5.0 Vdc
hFE
100
150 300
600
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 0.5 mAdc VCE(sat) 1.0 Vdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 0.5 mAdc VBE(sat) 0.6 1.0 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 500 µAdc, VCE = 5.0 Vdc, f = 30 MHz hfe 1.5 6.0
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz hfe 150 600
Small-Signal Short-Circuit Input Impedance
VCB = 5.0 Vdc, IE = 1.0 mAdc, f = 1.0 kHz hib 25 32 Ω
Small-Signal Short-Circuit Output Admittance
VCB = 5.0 Vdc, IE = 1.0 mAdc, f = 1.0 kHz hob
1.0 µΩ
Output Capacitance
VCB = 5.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 8.0 pF
Noise Figure
VCE = 5 Vdc; IC = 10 µAdc; Rg =10kΩ
Test 1: f = 100 Hz
Test 2: f = 1.0 kHz
Test 3: f = 10 kHz
NF
5
3
3
dB
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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