JDP2S02AFS Datasheet by Toshiba Semiconductor and Storage

TOSHIBA 2014-03-01

JDP2S02AFS

2014-03-01

0.8±0.05

0.2

1.0±0.05

0.1±0.05

0.6±0.05

ｶｿｰﾄ

ﾞ

ﾏｰｸ

0.1 0.1

0.48+0.02

-0.03

±0.05

0.07

TOSHIBA Diode Silicon Epitaxial PIN Type

JDP2S02AFS

UHF~VHF Band RF Switch Applications

• Suitable for reducing set’s size as a result from enabling high-density

mounting due to 2-pin small packages.

• Low series resistance: rs = 1.0 Ω (typ.)

• Low capacitance: CT = 0.3 pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Reverse voltage VR 30 V

Forward current IF 50 mA

Junction temperature Tj 150 °C

Storage temperature range Tstg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Reverse voltage VR I

R = 10 μA 30 ⎯ ⎯ V

Reverse current IR V

R = 30 V ⎯ ⎯ 0.1 μA

Forward voltage VF IF = 50 mA ⎯ 0.9 0.94 V

Capacitance CT V

R = 1 V, f = 1 MHz ⎯ 0.3 0.4 pF

Series resistance rs I

F = 10 mA, f = 100 MHz ⎯ 1.0 1.5 Ω

Note: Signal level when capacitance is measured. Vsig = 100 mVrms

Marking

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 1-1L1A

Weight: 0.0006 g (typ.)

Start of commercial production

2002-12

TOSHIBA Ta 2m Teslev ngm mu g E ,_ 3 U n) s g m E 2 w ‘ 3 5 m 3a 5a 05 cm (H ‘ m Reverse venege vR (V) Forwardcurrem \; (mA) 2 2014-03-01

JDP2S02AFS

2014-03-01

Reverse voltage VR (V)

CT – VR

Capacitance CT (pF)

Forward current IF (mA)

rs – IF

Series resistance rs (Ω)

0.1

0.3

0.5

3 5 30 5010

f = 1 MHz

Ta = 25°C

0.5

0.01 0.1 1 10

100

Ta = 25°C

Tester: HP4291A

f = 0.1 GHz

0.5

1.0

1.5

f = 0.1 GHz

0.5

1.0

1.5

TOSHIBA 2014-03-01

JDP2S02AFS

2014-03-01

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OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

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