MCD26-08IO8B Datasheet by IXYS

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Phase leg N E72873
MCD26-08io8B
Phase leg
Thyristor \ Diode Module
3 1 25
Part number
MCD26-08io8B
Backside: isolated
TAV
T
V V1.27
RRM
27
800
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
TO-240AA
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions. 20161222bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
L-I IXYS MCD26-08io8B Symbol Delinikion Condikions min. lyp. max. iUniI
MCD26-08io8B
V = V
A²s
A²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.27
R0.88 K/W
min.
27
VV
100T = 25°C
VJ
T = °C
VJ
mA3V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
115 WT = 25°C
C
40
800
forward voltage drop
total power dissipation
Unit
1.64
T = 25°C
VJ
125
V
T0
V0.85T = °C
VJ
125
r
T
11 mΩ
V1.27T = °C
VJ
I = A
T
V
40
1.65
I = A80
I = A80
threshold voltage
slope resistance for power loss calculation only
µA
125
VV800T = 25°C
VJ
IA42
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
125
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
22
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
125
I²t T = 45°C
value for fusing
T = °C125
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
125
520
560
970
940
A
A
A
A
440
475
1.35
1.31
800
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 125 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 125°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
45 A
T
P
G
= 0.45
di /dt A/µs;
G
=0.45
DRM
cr
V = ⅔ V
DRM
GK
1000
1.5 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
100 mA
T = °C-40
VJ
1.6 V
200 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
10 mA
V = ⅔ V
D DRM
125
latching current
T = °C
VJ
450 mA
I
L
25t µs
p
= 10
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
holding current
T = °C
VJ
200 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 20 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 27 A
T
100
R
thCH
thermal resistance case to heatsink
K/W
Rectifier
900
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.20
IXYS reserves the right to change limits, conditions and dimensions. 20161222bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
IXYS MCD26-08io8B T0-240AA Symbol Delinikion Condifions min. lyp. max. iUni! EIXYS w \CWW‘ T ename _ ,yyypwa unluzun Data base
MCD26-08io8B
Ratings
MCMA50PD1200TB TO-240AA-1B 1200
Package
T
op
°C
M
D
Nm4
mounting torque
2.5
T
VJ
°C125
virtual junction temperature
-40
Weight g81
Symbol
Definition
typ.
max.
min.
operation temperature
Unit
M
T
Nm4
terminal torque
2.5
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
13.0 9.7
16.0 16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
200 A
per terminal
100-40
terminal to terminal
TO-240AA
Similar Part Package Voltage class
MCMA35PD1200TB TO-240AA-1B 1200
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MCD26-08io8B 453242Box 36MCD26-08io8BStandard
3600
ISOL
T
stg
°C125
storage temperature
-40
3000
threshold voltage
V0.85
mΩ
V
0 max
R
0 max
slope resistance *
9.8
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
125 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20161222bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
L-I IXYS MCD26-08io8B 2.8/0.8 <20.8>‘ I 54 7g r‘x $9 -> +69
MCD26-08io8B
3 1 25
Outlines TO-240AA
IXYS reserves the right to change limits, conditions and dimensions. 20161222bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
L-I IXYS MCD26-08io8B
MCD26-08io8B
t [s]
I
TSM
[A]
Fig. 1 Surge overload current
I
TSM
: Crest value, t: duration
10
-3
10
-2
10
-1
10
0
10
1
800
600
400
200
0
T
VJ
= 45°C
T
VJ
= 125°C
50 HZ, 80% V
RRM
t [ms]
I
2
t
[A
2
s]
Fig. 2 I
2
t versus time (1-10 ms)
V
R
= 0 V
T
VJ
= 45°C
T
VJ
= 125°C
10
2
10
4
10
3
1 2 3 6 8 10
I
TAVM
[A]
T
C
[°C]
Fig. 3 Max. forward current
at case temperature
60
40
30
20
10
0
50
0 50 100 150
DC
180° sin
120°
60°
30°
DC
180° sin
120°
60°
30°
R
thJA
[KW]
1.5
2
2.5
3
4
5
6
8
Fig. 4 Power dissipation versus onstate current & ambient temp. (per thyristor)
P
T
[W]
T
A
[°C]I
TAVM
[A]
0 10 20 30 40 0 50 100 15050
80
60
40
20
0
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
P
tot
[W]
I
dAVM
[A] T
A
[°C]
Circuit
B6
3x MCC26 or
3x MCD26
R
thJA
[KW]
0.1
0.15
0.2
0.25
0.3
0.4
0.5
0.6
0 20 40 60 0 50 100 15080
100
200
300
400
0
I
G
[mA]
V
G
[V]
Fig. 5 Gate trigger charact.
10
0
10
1
10
2
10
3
10
4
0.1
1
10
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
I
GD
, T
VJ
= 125°C
3
4
2
1
56
10 100 1000
1
10
100
1000
Limit
typ.
T
VJ
= 25°C
I
G
[mA]
t
gd
[µs]
Fig. 7 Gate trigger delay time
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20161222bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
L-I IXYS MCD26-O8io8B
MCD26-08io8B
P
tot
[W]
I
RMS
[A]
Circuit
W3
3x MCC26 or
3x MCD26
R
thJA
[KW]
0.1
0.15
0.2
0.25
0.3
0.4
0.5
0.6
T
A
[°C]
Fig. 8 Three phase AC-controller: Power dissipation vs. RMS output current
and ambient temperature
400
300
200
100
0 20 40 60 0 50 100 150
Fig. 9 Transient thermal impedance junction to case (per thyristor)
t [s]
Z
thJC
[K/W]
30°
60°
120°
180°
DC
1.2
0.8
0.4
0
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.2
0.6
1.0
30°
60°
120°
180°
DC
Z
thJK
[K/W]
Fig. 10 Transient thermal impedance junction to heatsink (per thyristor)
t [s]
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1.5
1.0
0.5
0
R
thJC
for various conduction angles d:
d R
thJC
[K/W]
DC 0.88
180° 0.92
120° 0.95
60° 0.98
30° 1.01
Constants for Z
thJC
calculation:
i R
thi
[K/W] t
i
[s]
1 0.019 0.0031
2 0.029 0.0216
3 0.832 0.1910
R
thJK
for various conduction angles d:
d R
thJK
[K/W]
DC 1.08
180° 1.12
120° 1.15
60° 1.18
30° 1.21
Constants for Z
thJK
calculation:
i R
thi
[K/W] t
i
[s]
1 0.019 0.0031
2 0.029 0.0216
3 0.832 0.1910
4 0.200 0.4500
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20161222bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved

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