MCC26-12IO1B Datasheet by IXYS

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Phase leg N E72673
MCC26-12io1B
3 1 2
6 57 4
Phase leg
Thyristor Module
Part number
MCC26-12io1B
Backside: isolated
TAV
T
V V1.27
RRM
27
1200
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
Thyristor for line frequency
Planar passivated chip
Long-term stability
Direct Copper Bonded Al2O3-ceramic
Line rectifying 50/60 Hz
Softstart AC motor control
DC Motor control
Power converter
AC power control
Lighting and temperature control
TO-240AA
Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Base plate: DCB ceramic
Reduced weight
Advanced power cycling
Isolation Voltage: V~
3600
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms and Conditions of Usage
IXYS reserves the right to change limits, conditions and dimensions. 20161222bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
I: IXYS MC026-12io1 B Symbol Delinikion Condikions min. lyp. max. iUniI
MCC26-12io1B
V = V
A²s
A²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.27
R0.88 K/W
min.
27
VV
100T = 25°C
VJ
T = °C
VJ
mA3V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
115 WT = 25°C
C
40
1200
forward voltage drop
total power dissipation
Unit
1.64
T = 25°C
VJ
125
V
T0
V0.85T = °C
VJ
125
r
T
11 m
V1.27T = °C
VJ
I = A
T
V
40
1.65
I = A80
I = A80
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1200T = 25°C
VJ
IA42
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
125
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
22
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
125
I²t T = 45°C
value for fusing
T = °C125
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
125
520
560
970
940
A
A
A
A
440
475
1.35
1.31
1200
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 125 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 125°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
45 A
T
P
G
= 0.45
di /dt A/µs;
G
=0.45
DRM
cr
V = V
DRM
GK
1000
1.5 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
100 mA
T = °C-40
VJ
1.6 V
200 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
10 mA
V = V
D DRM
125
latching current
T = °C
VJ
450 mA
I
L
25t µs
p
= 10
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
holding current
T = °C
VJ
200 mA
I
H
25V = 6 V
D
R =
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 20 V = V
DRM
tµs
p
= 200
non-repet., I = 27 A
T
100
R
thCH
thermal resistance case to heatsink
K/W
Thyristor
1300
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.20
IXYS reserves the right to change limits, conditions and dimensions. 20161222bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
I: IXYS MCC26-12io1 B T0-240AA Symbol Delinikion Condifions min. lyp. max. iUni! EIXYS w \CWW‘ Ty e name _ ,YJ’WWX unluzun Data base
MCC26-12io1B
Ratings
MCMA50P1200TA TO-240AA-1B 1200
Package
T
op
°C
M
D
Nm4
mounting torque
2.5
T
VJ
°C125
virtual junction temperature
-40
Weight g81
Symbol
Definition
typ.
max.
min.
operation temperature
Unit
M
T
Nm4
terminal torque
2.5
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
13.0 9.7
16.0 16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
200 A
per terminal
100-40
terminal to terminal
TO-240AA
Similar Part Package Voltage class
MCMA35P1200TA TO-240AA-1B 1200
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I 1 mA
ISOL
MCC26-12io1B 452815Box 36MCC26-12io1BStandard
3600
ISOL
T
stg
°C125
storage temperature
-40
3000
threshold voltage
V0.85
m
V
0 max
R
0 max
slope resistance *
9.8
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
125 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20161222bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
IXYS MC026-12io1B A2.8-0.B D/N46244 to l l | “'7 f l l J u l l J u I "m l l I I wry (\l gal. L0 new: $2, 3 N °°' : '0. m. N <9; n="" 'si:,="" “n7="" g="" ;="" i="" l="" iii="" l="" '="" -="" l="" um)="" l—="" 65x19="" 9'="" general="" tolerance:="" din="" iso="" 2768="" class="" ,,c"="" 92105="" 80:03="" 6="" v="" —="" i="" in="" ——lo="" n.="" f.="" on="" \k="" q="" q="" h="" n="" ,7,="" '="" v.="" v="" 25="" 10.3="" 45="" 10.3="" 65="" 20.3="" optional="" accessories:="" keyed="" gate/cathode="" twin="" plugs="" ere="" length:="" 350="" mm,="" gate="white," cathode="red" ul="" 758.="" style="" 3751="" type="" zv="" 200l="" (l="Left" for="" pin="" pair="" 4/5)="" type="" zy="" 200r="" (r="Right" for="" pin="" pair="" 6/7)="">
MCC26-12io1B
3 1 2
6 57 4
Outlines TO-240AA
IXYS reserves the right to change limits, conditions and dimensions. 20161222bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
I: :XYS MCC26-12io1 B
MCC26-12io1B
0 25 50 75 100 125 150
T
a
[°C]
T
C
[°C]
t [ms]
t [s]
0.01 0.1 1
0
200
400
600
800
011
10
2
10
3
10
4
0 25 50 75 100 125 150
0
10
20
30
40
50
60
I
TSM
[A]
I
TAVM
[A]
0 10 20 30 40
0
10
20
30
40
50
60
70
P
tot
[W]
I
TAVM
[A]
0 25 50 75 100 125 1500 20 40 60
0
50
100
150
200
250
300
I
2
dt
[A
2
s]
T
VJ
= 45°C
180 ° sin
120 °
60°
30°
DC
T
VJ
= 125°C
P
tot
[W]
I
dAVM
[A] T
a
[°C]
Fig. 1 Surge overload current I
TSM
,
I
FSM
: Crest value, t: duration
Fig. 2 I
2
t versus time (1-10 ms) Fig. 3 Max. forward current
at case temperature
Fig. 4 Power dissipation vs. on-state current & ambient temperature
(per thyristor or diode)
Fig. 5 Gate trigger characteristics
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
Fig. 7 Gate trigger delay time
180 ° sin
120 °
60°
30°
DC
0.01 0.1 1 10
0.1
1
10
100
I
G
[A]
I
G
[mA]
T
VJ
= 25°C
t
gd
[µs]
limit
typ.
T
VJ
= 45°C
T
VJ
= 125°C
I
TSM
= 50 Hz
I
FSM
= 80% V
RRM
R
thKA
K/W
1.5
2
2.5
3
4
5
6
8
B6
Circuit
3x MCC26 or
3x MCD26
R
thKA
K/W
0.5
0.25
0.3
0.4
0.15
0.2
0.1
0.6
10
0
10
1
10
2
10
3
10
4
0.1
1
10
6
1
34
5
1: I
GT
,T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
V
G
[V]
6: P
GM
= 10 W
5: P
GM
= 5 W
4: P
GAV
= 0.5 W
I
GD
,T4= 125°C
2
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20161222bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
I: IXYS MCC26-12io1 B
MCC26-12io1B
0 20 40 60
0
40
80
120
160
200
240
280
320
t [s]
10
-2
10
-1
10
0
10
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Z
thJC
[
K/W]
I
RMS
[A]
P
tot
[
W]
0 25 50 75 100 125 150
T
a
[°C]
10
-2
10
-1
10
0
10
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Z
thJK
[K/W]
t [s]
DC
180°
120°
60°
30°
Fig. 8 Three phase AC-controller: Power dissipation versus
RMS output current and ambient temperature
Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)
Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode)
DC
180°
120°
60°
30°
Circuit
W3
3x MCC26 or
3x MCD26
0.4
0.3
0.25
R
thKA
K/W
0.5
0.1
0.15
0.2
0.6
R
thJC
for various conduction angles d:
d R
thJC
[K/W]
DC 0.88
180° 0.92
120° 0.95
60° 0.98
30° 1.01
Constants for Z
thJC
calculation:
i R
thi
[K/W] t
i
[s]
1 0.019 0.0031
2 0.029 0.0216
3 0.832 0.1910
R
thJK
for various conduction angles d:
d R
thJK
[K/W]
DC 1.08
180° 1.12
120° 1.15
60° 1.18
30° 1.21
Constants for Z
thJK
calculation:
i R
thi
[K/W] t
i
[s]
1 0.019 0.0031
2 0.029 0.0216
3 0.832 0.1910
4 0.200 0.4500
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20161222bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved

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