MCC19-14IO1B Datasheet by IXYS

Phase leg N E72673

MCC19-14io1B

3 1 2

6 57 4

Phase leg

Thyristor Module

Part number

MCC19-14io1B

Backside: isolated

TAV

T

V V1.57

RRM

18

1400

=

V=V

I=A

2x

Features / Advantages: Applications: Package:

● Thyristor for line frequency

● Planar passivated chip

● Long-term stability

● Direct Copper Bonded Al2O3-ceramic

● Line rectifying 50/60 Hz

● Softstart AC motor control

● DC Motor control

● Power converter

● AC power control

● Lighting and temperature control

TO-240AA

● Industry standard outline

● RoHS compliant

● Soldering pins for PCB mounting

● Base plate: DCB ceramic

● Reduced weight

● Advanced power cycling

● Isolation Voltage: V~

3600

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and

the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The

information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns

the specific application of your product, please contact your local sales office.

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.

Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend

- to perform joint risk and quality assessments;

- the conclusion of quality agreements;

- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.

Terms and Conditions of Usage

IXYS reserves the right to change limits, conditions and dimensions. 20161222bData according to IEC 60747and per semiconductor unless otherwise specified

I: IXYS MCC19-14io1 B Symbol Delinikion Condikions min. lyp. max. iUniI

MCC19-14io1B

V = V

A²s

Symbol

Definition

Ratings

typ.

max.

I

V

IA

V

T

1.56

R1.3 K/W

min.

18

VV

100T = 25°C

VJ

T = °C

VJ

mA3V = V

T = 25°C

VJ

I = A

T

V

T = °C

C

85

P

tot

77 WT = 25°C

C

40

1400

forward voltage drop

total power dissipation

Conditions

Unit

2.05

T = 25°C

VJ

125

V

T0

V0.85T = °C

VJ

125

r

T

18 mΩ

V1.57T = °C

VJ

I = A

T

V

40

2.29

I = A80

threshold voltage

slope resistance for power loss calculation only

µA

125

VV1400T = 25°C

VJ

IA28

P

GM

Wt = 30 µs 10

max. gate power dissipation

P

T = °C

C

125

Wt = 5

P

GAV

W0.5

average gate power dissipation

C

J

22

junction capacitance

V = V400 T = 25°Cf = 1 MHz

RVJ

pF

I

TSM

t = 10 ms; (50 Hz), sine T = 45°C

VJ

max. forward surge current

T = °C

VJ

125

I²t T = 45°C

value for fusing

T = °C125

V = 0 V

R

V = 0 V

R

V = 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

thJC

thermal resistance junction to case

T = °C

VJ

125

400

430

580

555

A

340

365

800

770

1400

300 µs

RMS forward current

T(RMS)

TAV

180° sine

average forward current

(di/dt)

cr

A/µs

150repetitive, I =T

VJ

= 125 °C; f = 50 Hz

critical rate of rise of current

V

GT

gate trigger voltage

V = 6 V T = °C25

(dv/dt) T = 125°C

critical rate of rise of voltage

A/µs500

V/µs

t = µs;

I A; V = ⅔ V

R = ∞; method 1 (linear voltage rise)

VJ

DVJ

75 A

T

P

G

= 0.45

di /dt A/µs;

G

=0.45

DRM

cr

V = ⅔ V

DRM

GK

1000

1.5 V

T = °C-40

VJ

I

GT

gate trigger current

V = 6 V T = °C25

DVJ

100 mA

T = °C-40

VJ

1.6 V

200 mA

V

GD

gate non-trigger voltage

T = °C

VJ

0.2 V

I

GD

gate non-trigger current

5 mA

V = ⅔ V

D DRM

125

latching current

T = °C

VJ

450 mA

I

L

25t µs

p

= 10

I A;

G

= 0.45 di /dt A/µs

G

= 0.45

holding current

T = °C

VJ

200 mA

I

H

25V = 6 V

D

R = ∞

GK

gate controlled delay time

T = °C

VJ

2 µs

t

gd

25

I A;

G

= 0.45 di /dt A/µs

G

= 0.45

V = ½ V

D DRM

turn-off time

T = °C

VJ

150 µs

t

q

di/dt = A/µs10 dv/dt = V/µs20

V =

R

100 V; I A;

T

= 20 V = ⅔ V

DRM

tµs

p

= 200

non-repet., I = 18 A

T

100

R

thCH

thermal resistance case to heatsink

K/W

Thyristor

1500

RRM/DRM

RSM/DSM

max. non-repetitive reverse/forward blocking voltage

max. repetitive reverse/forward blocking voltage

R/D

reverse current, drain current

T

R/D

200

0.20

IXYS reserves the right to change limits, conditions and dimensions. 20161222bData according to IEC 60747and per semiconductor unless otherwise specified

I: IXYS MCC19-14io1 B T0-240AA Symbol Delinikion Condiﬁons min. lyp. max. iUni! EIXYS w \CWW‘ Ty e name _ ,YJ’WWX unluzun Data base

MCC19-14io1B

Ratings

MCMA35P1600TA TO-240AA-1B 1600

Package

T

op

°C

M

D

Nm4

mounting torque

2.5

T

VJ

°C125

virtual junction temperature

-40

Weight g81

Symbol

Definition

typ.

max.

min.

Conditions

operation temperature

Unit

M

T

Nm4

terminal torque

2.5

VV

t = 1 second

V

t = 1 minute

isolation voltage

mm

13.0 9.7

16.0 16.0

d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current

200 A

per terminal

100-40

terminal to terminal

TO-240AA

Similar Part Package Voltage class

MCMA25P1600TA TO-240AA-1B 1600

Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering

50/60 Hz, RMS; I ≤ 1 mA

ISOL

MCC19-14io1B 452858Box 36MCC19-14io1BStandard

3600

ISOL

T

stg

°C125

storage temperature

-40

3000

threshold voltage

V0.85

mΩ

V

0 max

R

0 max

slope resistance *

16.8

Equivalent Circuits for Simulation

T =

VJ

I

V

0

R

0

Thyristor

125 °C

* on die level

IXYS reserves the right to change limits, conditions and dimensions. 20161222bData according to IEC 60747and per semiconductor unless otherwise specified

IXYS MCC19-14io1 B A2.8-0.B D/N46244 to l l | “'7 f l l J u l l J u I "m l l I I wry (\l gal. L0 new: $2, 3 N °°' : '0. m. N <9; n="" 'si:,="" “n7="" g="" ;="" i="" l="" iii="" l="" '="" -="" l="" um)="" l—="" 65x19="" 9'="" general="" tolerance:="" din="" iso="" 2768="" class="" ,,c"="" 92105="" 80:03="" 6="" v="" —="" i="" in="" ——lo="" n.="" f.="" on="" \k="" q="" q="" h="" n="" ,7,="" '="" v.="" v="" 25="" 10.3="" 45="" 10.3="" 65="" 20.3="" optional="" accessories:="" keyed="" gate/cathode="" twin="" plugs="" ere="" length:="" 350="" mm,="" gate="white," cathode="red" ul="" 758.="" style="" 3751="" type="" zv="" 200l="" (l="Left" for="" pin="" pair="" 4/5)="" type="" zy="" 200r="" (r="Right" for="" pin="" pair="" 6/7)="">

MCC19-14io1B

3 1 2

6 57 4

Outlines TO-240AA

IXYS reserves the right to change limits, conditions and dimensions. 20161222bData according to IEC 60747and per semiconductor unless otherwise specified

I: IXYS MCC19-14io1 B

MCC19-14io1B

t [s]

I

TSM

[A]

t [ms]

I

2

t

[A

2

s]

V

R

= 0 V

TVJ = 45°C

TVJ = 125°C

TVJ = 45°C

TVJ = 125°C

50 HZ, 80% VRRM

I

TAVM

[A]

T

C

[°C]

Fig. 1 Surge overload current

I

TSM

: Crest value, t: duration Fig. 2 I

2

t versus time (1-10 ms) Fig. 3 Max. forward current

at case temperature

Fig. 4 Power dissipation versus onstate current & ambient temp. (per thyristor)

Fig. 6 Three phase rectifier bridge: Power dissipation versus direct

output current and ambient temperature

P

T

[W]

T

A

[°C]I

TAVM

[A]

RthJA [KW]

1.5

2

2.5

3

4

5

6

8

RthJA [KW]

0.1

0.15

0.2

0.25

0.3

0.4

0.5

0.6

P

tot

[W]

I

dAVM

[A] T

A

[°C]

Circuit

B6

3x MCC19

I

G

[mA]

V

G

[V]

Fig. 5 Gate trigger charact.

10

0

10

1

10

2

10

3

10

4

0.1

1

10

1: I

GT

, T

VJ

= 125°C

2: I

GT

, T

VJ

= 25°C

3: I

GT

, T

VJ

= -40°C

4: P

GAV

= 0.5 W

5: P

GM

= 5 W

6: P

GM

= 10 W

I

GD

, T

VJ

= 125°C

3

4

2

1

56

10 100 1000

1

10

100

1000

Limit

typ.

T

VJ

= 25°C

I

G

[mA]

t

gd

[µs]

Fig. 7 Gate trigger delay time

500

400

300

200

100

0

10-3 10-2 10-1 100101

102

103

1 2 3 6 8 10

50

40

30

20

10

0

0 50 100 150

80

60

40

20

0

0 10 20 30 40 0 50 100 150

0 20 40 60 0 50 100 150

0

20

100

150

200

250

300

DC

180° sin

120°

60°

30°

DC

180° sin

120°

60°

30°

Thyristor

IXYS reserves the right to change limits, conditions and dimensions. 20161222bData according to IEC 60747and per semiconductor unless otherwise specified

I: IXYS MCC19-14io1 B j

MCC19-14io1B

Ptot

[W]

IRMS [A]

Circuit

W3

3x MCC19

R

thJA

[KW]

0.1

0.15

0.2

0.25

0.3

0.4

0.5

0.6

TA [°C]

Fig. 8 Three phase AC-controller: Power dissipation vs. RMS output current

and ambient temperature

Fig. 9 Transient thermal impedance junction to case (per thyristor)

t [s]

ZthJC

[K/W]

30°

60°

120°

180°

DC

30°

60°

120°

180°

DC

ZthJK

[K/W]

Fig. 10 Transient thermal impedance junction to heatsink (per thyristor)

t [s]

RthJC for various conduction angles d:

d RthJC [K/W]

DC 1.30

180° 1.35

120° 1.39

60° 1.42

30° 1.45

Constants for ZthJC calculation:

i Rthi [K/W] ti [s]

1 0.018 0.0033

2 0.041 0.0216

3 1.241 0.1910

RthJK for various conduction angles d:

d RthJK [K/W]

DC 1.50

180° 1.55

120° 1.59

60° 1.62

30° 1.65

Constants for ZthJK calculation:

i Rthi [K/W] ti [s]

1 0.018 0.0033

2 0.041 0.0216

3 1.241 0.1910

4 0.200 0.4600

400

300

200

100

0

0 10 20 30 40 50 0 50 100 150

15

10

5

0

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

20

15

10

5

0

Thyristor

IXYS reserves the right to change limits, conditions and dimensions. 20161222bData according to IEC 60747and per semiconductor unless otherwise specified

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