VB10170C Datasheet by Vishay Semiconductor Diodes Division

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VISHAY. ® RoHS cowumr HALOGEN FREE www vushay com/doc799912 3D 5 Aval‘ab‘e DwodesAmencas@\/wshay.com DwodesAswa@\/wshay.com DwodesEuvogemusnauom www.v\shay.com/doc?91000
VB10170C
www.vishay.com Vishay General Semiconductor
Revision: 19-Jun-2018 1Document Number: 89948
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.57 V at IF = 2.5 A
DESIGN SUPPORT TOOLS
FEATURES
Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 and M3 suffix meet JESD 201 class 2 whisker test
Polarity: as marked
PRIMARY CHARACTERISTICS
IF(AV) 2 x 5 A
VRRM 170 V
IFSM 80 A
VF at IF = 5.0 A 0.65 V
TJ max. 175 °C
Package D2PAK (TO-263AB)
Circuit configuration Common cathode
1
2
K
TMBS ®
D2PAK (TO-263AB)
PIN 1
PIN 2
K
HEATSINK
VB10170C
click logo to get started
Available
Models
Available
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VB10170C UNIT
Maximum repetitive peak reverse voltage VRRM 170 V
Maximum average forward rectified current
(fig. 1)
per device
IF(AV)
10
A
per diode 5
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 80 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG -40 to +175 °C
VISHAY. DwodesAmencasfliwshayxom DwodesAswafliwshayLom DwodesEuvogemusnauom www.v\shay,com/doc?91000
VB10170C
www.vishay.com Vishay General Semiconductor
Revision: 19-Jun-2018 2Document Number: 89948
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
IF = 2.5 A TA = 25 °C
VF (1)
0.74 -
V
IF = 5.0 A 0.84 1.03
IF = 2.5 A TA = 125 °C 0.57 -
IF = 5.0 A 0.65 0.74
Reverse current per diode
VR = 136 V TA = 25 °C
IR (2)
0.3 - μA
TA = 125 °C 0.9 - mA
VR = 170 V TA = 25 °C - 90 μA
TA = 125 °C 1.3 10 mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VB10170C UNIT
Typical thermal resistance per diode RJC
3.0 °C/W
per device 1.7
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-263AB VB10170C-E3/4W 1.38 4W 50/tube Tube
TO-263AB VB10170C-E3/8W 1.38 8W 800/reel Tape and reel
TO-263AB VB10170C-M3/I 1.38 I 800/reel Tape and reel
0
1
2
3
4
5
6
0 25 50 75 100 125 150 175
Average Forward Rectified Current (A)
Case Temperature (°C)
RthJ-A=RthJ-C
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
4.4
0123456
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = tp/T
T
tp
VISHAY. mo lent Thevmal Impedance (" 100 ‘H 7W7 F—'\ T m, i %i [ fl [UL 4E LA 1 W DwodesAmencas©wshay£om DwodesAswa©wshay£om DwodesEuvogemushauom www.v\shay.CUm/doc?91000
VB10170C
www.vishay.com Vishay General Semiconductor
Revision: 19-Jun-2018 3Document Number: 89948
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
TA= 175 °C
0.0001
0.001
0.01
0.1
1
10
100
20 40 60 80 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
A
= 150 °C
A
= 125 °C
A
= 100 °C
A
= 25 °C
TA= 175 °C
10
100
1000
10 000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
TJ= 25 °C
f = 1.0 MHz
Vsi
g
= 50 mV
p
-
p
0.1
1
10
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to Case
D
2
PAK (TO-263AB)
Mounting Pad Layout
0.670 (17.02)
0.591 (15.00)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.15 (3.81) min.
0.33 (8.38) min.
0.42 (10.66) min.
12
K
K
0.140 (3.56)
0.110 (2.79)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.090 (2.29)
0 to 0.01 (0 to 0.254)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.190 (4.83)
0.160 (4.06)
0.205 (5.20)
0.195 (4.95)
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.360 (9.14)
0.320 (8.13)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
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