IXYN100N120C3H1 Datasheet by IXYS

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© 2018 IXYS CORPORATION, All Rights Reserved
IXYN100N120C3H1 VCES = 1200V
IC110 = 60A
VCE(sat) 


3.50V
tfi(typ) = 110ns
DS100407C(4/18)
High-Speed IGBT
for 20-50 kHz Switching
Features
Optimized for Low Switching Losses
Square RBSOA
Isolation Voltage 2500V~
Anti-Parallel Sonic Diode
Positive Thermal Coefficient of
Vce(sat)
Avalanche Rated
High Current Handling Capability
International Standard Package
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250A, VGE = 0V 1200 V
VGE(th) IC= 250A, VCE = VGE 3.0 5.0 V
ICES VCE = VCES, VGE = 0V 50 A
TJ = 125C 3 mA
IGES VCE = 0V, VGE = 20V 100 nA
VCE(sat) IC= 100A, VGE = 15V, Note 1 2.96 3.50 V
TJ = 150C 3.78 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1200 V
VCGR TJ= 25°C to 150°C, RGE = 1M 1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C (Chip Capability) 140 A
IC110 TC= 110°C 60 A
IF110 TC= 110°C 49 A
ICM TC= 25°C, 1ms 420 A
IATC= 25°C 50 A
EAS TC= 25°C 1.2 J
SSOA VGE = 15V, TVJ = 125°C, RG = 1 ICM = 200 A
(RBSOA) Clamped Inductive Load @VCE VCES
PCTC= 25°C 690 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
VISOL 50/60Hz t = 1min 2500 V~
IISOL 1mA t = 1s 3000 V~
MdMounting Torque 1.5/13 Nm/lb.in.
Terminal Connection Torque 1.3/11.5 Nm/lb.in.
Weight 30 g
1200V XPTTM IGBT
GenX3TM w/ Diode
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
G
E
E
C
E153432
E
L'I IXYS % } }
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN100N120C3H1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Reverse Sonic Diode (FRD)
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
VF IF = 60A, VGE = 0V, Note 1 2.7 V
TJ = 125°C 1.95 V
IRM 50 A
trr 235 ns
RthJC 0.52 °C/W
IF = 60A, VGE = 0V, TJ = 125°C
-diF/dt = 700A/μs, VR = 600V
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 60A, VCE = 10V, Note 1 30 50 S
Cies 4950 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 490 pF
Cres 120 pF
Qg(on) 260 nC
Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES 47 nC
Qgc 102 nC
td(on) 27 ns
tri 110 ns
Eon 12.00 mJ
td(off) 120 ns
tfi 110 ns
Eoff 4.90 mJ
td(on) 27 ns
tri 116 ns
Eon 15.00 mJ
td(off) 146 ns
tfi 125 ns
Eoff 6.15 mJ
RthJC 0.18 °C/W
RthCS 0.05 °C/W
Inductive load, TJ = 25°C
IC = IC110, VGE = 15V
VCE = 0.5 • VCES, RG = 1
Note 2
Inductive load, TJ = 125°C
IC = IC110, VGE = 15V
VCE = 0.5 • VCES, RG = 1
Note 2
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© 2018 IXYS CORPORATION, All Rights Reserved
IXYN100N120C3H1
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
20
40
60
80
100
120
140
160
180
200
00.511.522.533.544.555.56
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
12V
11V
7V
9V
6V
8V
10V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
50
100
150
200
250
300
350
400
450
0 5 10 15 20 25 30 35
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
12V
13V
8V
9V
10V
11V
14V
6V
7V
Fig. 3. Output Characteristics @ T
J
= 150
o
C
0
20
40
60
80
100
120
140
160
180
200
012345678
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
12V
11V
10V
8V
9V
7V
5V
6V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 100A
I
C
= 50A
I
C
= 200A
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
2
3
4
5
6
7
8
6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 200A
T
J
= 25
o
C
100A
50A
Fig. 6. Input Admittance
0
40
80
120
160
200
240
4567891011
V
GE
- Volts
I
C
-
Amperes
T
J
= 150
o
C
25
o
C
T
J
= - 40
o
C
9 > ”1 iii - w 2 > m u 20 w an an mo 12L) 1M] 1541 me 200 IC-Amperes 2m 15!] E 8 E $100 0 so a 2m) Fig. 11. Maximum Transient Thermal 1 gm :4 2 :5 am 0001 0 wow a (mm a am a m Pulse Widlh - Seconds IXVS Reserves the Right to Change Limits Test Conditions, and DImenswons.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN100N120C3H1
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140 160 180 200
IC - Amperes
g
f s
-
Siemens
T
J
= - 40
o
C
25
o
C
150
o
C
Fig. 10. Reverse-Bias Safe Operating Area
0
50
100
150
200
200 400 600 800 1000 1200
VCE - Volts
IC - Amperes
T
J
= 150
o
C
R
G
= 1
dv / dt < 10V / ns
Fig. 11. Maximum Transient Thermal Impedance (IGBT)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - K / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200 240 280
QG - NanoCoulombs
VGE - Volts
V
CE
= 600V
I
C
= 100A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
VCE - Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
Cies
Coes
Cres
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© 2018 IXYS CORPORATION, All Rights Reserved
IXYN100N120C3H1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
1
2
3
4
5
6
7
8
12345678910
R
G
- Ohms
E
off
- MilliJoules
0
2
4
6
8
10
12
14
16
E
on
- MilliJoules
E
off
E
on
T
J
= 125
o
C , V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
60
80
100
120
140
160
12345678910
R
G
- Ohms
t
f i
- Nanoseconds
0
100
200
300
400
500
t
d(off)
- Nanoseconds
t
f i
t
d(off)
T
J
= 125
o
C, V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
E
off
- MilliJoules
0
2
4
6
8
10
12
14
E
on
- MilliJoules
E
off
E
on
R
G
= 1

V
GE
= 15V
V
CE
= 600V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
25 50 75 100 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
2
4
6
8
10
12
14
E
on
- MilliJoules
E
off
E
on
R
G
= 1

V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
50
70
90
110
130
150
170
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
f i
- Nanoseconds
100
120
140
160
180
200
220
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 1
, V
GE
= 15V
V
CE
= 600V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
50
70
90
110
130
150
170
25 50 75 100 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
100
120
140
160
180
200
220
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 1
, V
GE
= 15V
V
CE
= 600V
I
C
= 50A, 100A
I60 7 \‘ \ In A Nannsecnnds \ \ In - Nanoseconds \\ 40 \ 120 mu \\ \\ I60 ma IwNannsecnnds IXVS Reserves the ngm to Change meus‘ Test Commons, and Dlmeflsmfls. 20 sa
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN100N120C3H1
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
20
40
60
80
100
120
140
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
r i
- Nanoseconds
27
28
29
30
31
32
33
t d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 1
, V
GE
= 15V
V
CE
= 600V
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
140
160
25 50 75 100 125
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
27
28
29
30
31
32
33
34
35
t d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 1
, V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
40
80
120
160
200
12345678910
R
G
- Ohms
t r i
- Nanoseconds
20
30
40
50
60
70
t d(on)
- Nanoseconds
t
r i
t
d(on)
T
J
= 125
o
C, V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
IXYS REF: IXY_100N120C3(9T-RY92)4-06-18
‘20 A e A / g m // O 5 " m n :125 c 4 T1 : 25%: a 3 a a 5 ‘ ‘ 5 2 2 5 a a 5 4 m V; (V) T J :125"C 50 V“ :BOOV \; : 100A 50A 30A 320 so A 250 - / g _ 40 / 240 30 [I 200 20 160 200 we 600 500 mm 1200 1400 teen 200 400 sou 800 mm 1200 (hp/m (A/us) mm (A/us) ‘ ° /7 0 9 / X “a ha a 1 o s ORR 0 5 ‘ © 2015 IXYS CORPORATION, Au HIQMS Reserved
© 2018 IXYS CORPORATION, All Rights Reserved
IXYN100N120C3H1
Fig. 21. Diode Forward Characteristics
0
40
80
120
160
200
00.511.522.533.54
V
F
(V)
I
F
(A)
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 22. Reverse Recovery Charge vs. -di
F
/dt
3
4
5
6
7
8
200 400 600 800 1000 1200 1400 1600
-di
F
/ dt (A/μs)
Q
RR
(μC)
T
J
= 125
o
C
V
R
= 600V I
F
= 100A
60A
30A
Fig. 23. Reverse Recovery Current vs. -di
F
/dt
20
30
40
50
60
70
200 400 600 800 1000 1200 1400 1600
di
F
/dt (A/μs)
I
RR
(A)
T
J
= 125
o
C
V
R
= 600V I
F
= 100A, 60A, 30A
F
i
g. 24. Reverse Recovery Time vs. -di
F
/dt
160
200
240
280
320
360
200 400 600 800 1000 1200 1400 1600
-di
F
/dt (A/μs)
t
RR
(ns)
T
J
= 125
o
C
V
R
= 600V
I
F
= 100A
60A
30A
Fig. 25. Dynamic Parameters Q
RR,
I
RR
vs.
Junction Temperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0 20 40 60 80 100 120 140
T
J
(ºC)
K
F
K
F
I
RR
K
F
Q
RR
V
R
= 600V
I
F
= 60A
-diF /dt = 700A/μs
Fig. 26. Maximum Transient Thermal Impedance (Diode)
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
IXY M44 MN I? ‘ a (4 PUEES) 3g. fie... SYM INCHES MILLI ’TERS MIN MAX MIN MAX A 1.224 1.260 31.10 32.00 B .303 .327 7.70 8.30 C .161 .173 4.10 4.40 D .161 .173 4.10 4.40 E .161 .173 4.10 4.40 F .587 .598 14.90 15.20 C 1.181 1.201 30.00 30.50 H 1.488 1.508 37.80 38.30 J .461 .484 11.70 12.30 L .030 .033 0.75 0.85 M .492 .512 12.50 13.00 N .984 1.004 25.00 25.50 0 .075 .087 1.90 2.20 S .181 .193 4.60 4.90 U .000 .005 0.00 0.13 1. NUT MATERIAL STANDARD — Low camon sIeel with Ni plating. OPTIONAL. * Brass MM is avuiI PAR1 NUMBER—FIN 2. ALL METAL SURFACE ARE PRE NI PLATED EXCEPT TRIM AREA. able.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN100N120C3H1
SOT-227 miniBLOC (IXYN)

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