RPR-220 Datasheet by Rohm Semiconductor

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RPR-220
Sensors
1/3
Reflective photosensor (photoreflector)
RPR-220
The RPR-220 is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-
sensitivity, silicon planar phototransistor. A custom lamp was developed to enable the achievement of a smaller package
than with conventional reflectors.
!
!!
!Application
Compact disc players, Copiers, Game machines, Office
automation equipment
!
!!
!Features
1) A plastic lens is used for high sensitivity.
2) A built-in visible light filter minimizes the influence of
stray light.
3) Lightweight and compact.
!
!!
!External dimensions (Units : mm)
1. Unspecified tolerance shall be ±0.2.
Note :
2. Dimension in parenthesis are
show for reference.
2−φ2.2
4.96.5Min 20
1.4
6.4
2.8
2.5±1
(2.8)
(2.5)
4
3
1
2
4
31
2
Anode
Cathode
Emitter
Collector
4 0.5±0.1
0.35
40.6
(0.6)
(3.2)(1)
(0.6)
!
!!
!Absolute maximum ratings (Ta=25°C)
Parameter
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Input
(LED)
Output
(Photo-
transistor)
Storage temperature
Symbol
I
F
V
R
P
D
V
CEO
V
ECO
I
C
P
C
Topr
Tstg
Limits
50
5
80
30
4.5
30
80
25∼+85
30∼+85
Unit
mA
V
mW
V
V
mA
mW
˚C
˚C
RPR-220
Sensors
2/3
!
!!
!Electrical and optical characteristics (Ta=25°C)
Input
characteristics
Output
characteristics
Transfer
characteristics
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation voltage
Response time
Parameter Symbol
VF
IR
ICEO
λP
IC
tr·tf
VCE
(sat)
Min.
0.08
Typ.
1.34
800
0.3
0.1
10
Max.
1.6
10
0.5
0.8
0.3
Unit
VI
F=50mA
VR=5V
VCE=10V
VCE=2V, IF=10mA
VCC=10V, IF=20mA, RL=100
IF=20mA, IC=0.1mA
µA
µA
nm
µA
V
Conditions
µs
!
!!
!Electrical and optical characteristic curves
AMBIENT TEMPERATURE : Ta (°C)
10080604020
P
C
P
D
0
0
20
40
60
80
100
Fig.1 Power dissipation / collector power
dissipation vs. ambient temperature
POWER DISSIPATION /
COLLECTOR POWER DISSIPTION : P
D
/ P
C
(mW)
FORWARD CURRENT : I
F
(
mA)
FORWARD VOLTAGE : V
F
(V)
0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.1
1
10
100
1A Ta=25°C
Fig.2 Forward current
vs. forward voltage
FORWARD VOLTAGE : V
F
(V)
AMBIENT TEMPERATURE : Ta (°C)
Fig.3 Forward voltage vs. ambient
temperature
0 20406080100
0
0.4
0.8
1.2
1.6
2.0
10mA
1mA
0
0.5
1.0
1.5
2.0
2.5
0 1020304050
FORWARD CURRENT : I
F
(
mA)
COLLECTOR CURRENT : I
C
(
mA)
V
CE
=2V
d=6mm
Fig.4 Collector current
vs. forward current
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR EMITTER : V
CE
(
V)
0 5 10 15 20 25
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Fig.5 Output characteristics
30mA
20mA
15mA
10mA
5mA
I
F
=40mA
Standard paper (90% reflection)
d=6mm
DARK CURRENT : I
CEO
(µ
A)
AMBIENT TEMPERATURE : Ta (°C)
80 60 40 20 0 20 40 60 80 100 120 140100
0.001
0.01
0.1
1
Fig.6 Dark current vs. ambient
temperature
20V
10V
V
CE
=30V
RPR-220
Sensors
3/3
1
10
100
02468101214
DISTANCE : d (mm)
RELATIVE COLLECTOR WRRENT : I
C
(%)
Fig.7 Relative output vs. distance
RELATIVE COLLECTOR CURRENT : IC (%)
AMBIENT TEMPERATURE : Ta (°C)
4060 200 20406080100
0
20
40
60
80
100
120
160
140
Fig.8 Relative output vs. ambient
temperature
Fig.9 Forward current vs.
ambient temperature
FORWARD CURRENT : I
F
(
mA)
0 20 40 60 80 100
20
80
100
60
40
0
AMBIENT TEMPERATURE : Ta (°C)
!
!!
!Circuit for testing transfer characteristics
V
CC
I
C
I
F
d=6mm
Reflection plate
V
CC
=2V
I
F
=10mA

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