NSS20501UW3T2G Datasheet by ON Semiconductor

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0N Semiconductorg SE VDM
© Semiconductor Components Industries, LLC, 2012
November, 2012 Rev. 3
1Publication Order Number:
NSS20501UW3/D
NSS20501UW3
20 V, 7.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductors e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DCDC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
This is a PbFree Device
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Collector-Emitter Voltage VCEO 20 Vdc
Collector-Base Voltage VCBO 20 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current Continuous IC5.0 Adc
Collector Current Peak ICM 7.0 A
Electrostatic Discharge ESD HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD (Note 1) 875
7.0
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA (Note 1) 143 °C/W
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD (Note 2) 1.5
11.8
W
mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA (Note 2) 85 °C/W
Thermal Resistance,
JunctiontoLead #3
RqJL (Note 2) 23 °C/W
Junction and Storage
Temperature Range
TJ, Tstg 55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR4 @ 100 mm2, 1 oz copper traces.
2. FR4 @ 500 mm2, 1 oz copper traces.
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Device Package Shipping
ORDERING INFORMATION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
WDFN3
CASE 506AU
NSS20501UW3T2G WDFN3
(PbFree)
3000/
Tape & Reel
20 VOLTS, 7.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 31 mW
1
VD = Specific Device Code
M= Date Code
G= PbFree Package
VD M G
G
1
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
(Note: Microdot may be in either location)
2
3
NSS20501UW3TBG WDFN3
(PbFree)
3000/
Tape & Reel
NSS20501UW3
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typical Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO 20 − −
Vdc
CollectorBase Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO 20 − −
Vdc
EmitterBase Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO 6.0 − −
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
0.1
mAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc)
IEBO
0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
(IC = 3.0 A, VCE = 2.0 V)
hFE 200
200
200
200
180
325
310
300
CollectorEmitter Saturation Voltage (Note 3)
(IC = 0.1 A, IB = 0.010 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 1.0 A, IB = 0.010 A)
(IC = 2.0 A, IB = 0.020 A)
(IC = 3.0 A, IB = 0.030 A)
(IC = 4.0 A, IB = 0.400 A)
VCE(sat)
0.007
0.031
0.045
0.070
0.120
0.110
0.008
0.040
0.075
0.100
0.135
0.125
V
Base Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 0.01 A)
VBE(sat)
0.760 0.900
V
Base Emitter Turnon Voltage (Note 3)
(IC = 2.0 A, VCE = 2.0 V)
VBE(on)
0.730 0.900
V
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
fT150 − −
MHz
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo 650 pF
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo 70 pF
SWITCHING CHARACTERISTICS
Delay (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) td 90 ns
Rise (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) tr 100 ns
Storage (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) ts 500 ns
Fall (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) tf 100 ns
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
O‘C 150‘0 / ’ u 50: 50:0 (2 V) 5010 ,.
NSS20501UW3
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3
55°C (2 V)
55°C (5 V)
25°C (2 V)
25°C (5 V)
150°C (5 V)
150°C (2 V)
VCE(sat) = 150°C25°C
55°C
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
0.001
IC, COLLECTOR CURRENT (A)
0.20
0.05
0
0.01 0.1 1.0 10
0.10
0.15
IC/IB = 10
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
0.001
IC, COLLECTOR CURRENT (A)
0.20
0.05
0
0.01 0.1 1.0 10
0.10
0.15
IC/IB = 100
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
VCE(sat) = 55°C
25°C
150°C
0.25
150°C
25°C
55°C
Figure 3. DC Current Gain vs.
Collector Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
Figure 5. Base Emitter TurnOn Voltage vs.
Collector Current
Figure 6. Saturation Region
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.010.001
1.0
0.4
0.10.001
IC, COLLECTOR CURRENT (A)
0.6
0.4
0.2
IB, BASE CURRENT (mA)
0.01
1.0
0.6
0.4
0.2
0
0.01
0.1 10
1.0 1000.1
0.6
0.8
0.8
0.3
150°C
25°C
55°C
0.8
1.0
1.0 10
125
225
325
375
425
475
575
0.001 0.01 0.1 1.0 10
hFE, DC CURRENT GAIN
1.0
1.1
1.2
VBE(sat), BASE EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE EMITTER TURNON VOLTAGE (V)
10
VCE, COLLECTOREMITTER VOLTAGE (V)
IC = 500 mA
10 mA 100 mA
300 mA
VCE = 2.0 V
525
0.7
0.5
0.3
0.9
175
275
0.5
0.7
0.9
IC/IB = 10
NSS20501UW3
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4
VCE (Vdc)
Figure 7. Input Capacitance
VEB, EMITTER BASE VOLTAGE (V)
0
575
525
475
325
275
3.01.0 2.0
375
675
625
5.04.0 6.0
0.01
0.1
1.0
10
0.01 1.0 10 100
Cibo (pF)
Cibo, INPUT CAPACITANCE (pF)
Figure 8. Output Capacitance
VCB, COLLECTOR BASE VOLTAGE (V)
0
90
80
70
50
40
2.0
60
130
100
10 12 16
Cobo (pF)
Cobo, OUTPUT CAPACITANCE (pF)
Figure 9. Safe Operating Area
14
IC (A)
1.0 mS
10 mS
100 mS
1.0 S
Thermal
Limit
110
120
0.1
425
4.0 6.0 8.0
Single Pulse Test
at Tamb = 25°C
tEs DIMENSION‘NG AND IOLERANCING PEP AS conoLst D‘MENS‘ON M‘LLIMETERS DIMENSION a APPUES TO PLATED TERM‘NAL AND \S MEASUPED BETWEEN a 25 AND a 341 MM FROM TERM‘NAL o coPLANAPw AFFUES TO THE EXPOSED PAD AS WELL AS THE TERMINALS \ \ Pm ONE ‘ REFERENCE ‘ \ L / :sPE umREP (:35 um nos nm4 um mm \ TOP VIEW A fiFfl+ U“) 7 SIDE VIEW L m m T & 9924. T5 BOTTOM VIEW W J
NSS20501UW3
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5
PACKAGE DIMENSIONS
WDFN3
CASE 506AU
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 .
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS
MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS
THE TERMINALS.
A
D
E
B
C0.10
PIN ONE
2 X
REFERENCE
2 X
TOP VIEW
SIDE VIEW
BOTTOM VIEW
A
L
(A3)
D2
E2
C
C0.10
C0.10
C0.08
8 X
A1
SEATING
PLANE
e
2X
K
NOTE 3
b
3X
0.10 C
0.05 C
ABB
12
3
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.70 0.75 0.80 0.028
INCHES
A1 0.00 0.05 0.000
A3 0.20 REF
b0.25 0.30 0.35 0.010
D2.00 BSC
D2 1.40 1.50 1.60 0.055
E2.00 BSC
E2 0.90 1.00 1.10 0.035
0.030 0.031
0.002
0.008 REF
0.012 0.014
0.079 BSC
0.059 0.063
0.079 BSC
0.039 0.043
NOM MAX
e
0.35 REF 0.014 REF
K
1.30 BSC 0.051 BSC
0.35 0.40 0.45 0.014 0.016 0.018
L
e/2
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.600
1.300
0.300
0.250
0.400
1.600
1.100
0.400
2X
0.275
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NSS20501UW3/D
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