MMSZyyyT1G, SZMMSZyyyT1G Series Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2012
August, 2019 Rev. 12
1Publication Order Number:
MMSZ2V4T1/D
MMSZxxxT1G Series,
SZMMSZxxxT1G Series
Zener Voltage Regulators
500 mW SOD123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD123 package. These devices provide a
convenient alternative to the leadless 34package style.
Features
500 mW Rating on FR4 or FR5 Board
Wide Zener Reverse Voltage Range 2.4 V to 56 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
AECQ101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
PbFree Packages are Available*
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V0
MAXIMUM RATINGS
Rating Symbol Max Unit
Total Power Dissipation on FR5 Board,
(Note 1) @ TL = 75°C
Derated above 75°C
PD500
6.7
mW
mW/°C
Thermal Resistance, JunctiontoAmbient
(Note 2)
RqJA 340 °C/W
Thermal Resistance, JunctiontoLead
(Note 2)
RqJL 150 °C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR5 = 3.5 X 1.5 inches.
2. Thermal Resistance measurement obtained via infrared Scan Method.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
SOD123
CASE 425
STYLE 1
1
Cathode
2
Anode
MARKING DIAGRAM
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
DEVICE MARKING INFORMATION
www.onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMSZxxxT1G SOD123
(PbFree)
3,000 /
Tape & Reel
xx M G
G
xx = Device Code
M = Date Code
G= PbFree Package
MMSZxxxT3G SOD123
(PbFree)
10,000 /
Tape & Reel
1
(Note: Microdot may be in either location)
SZMMSZxxxT1G SOD123
(PbFree)
3,000 /
Tape & Reel
SZMMSZxxxT3G SOD123
(PbFree)
10,000 /
Tape & Reel
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MMSZxxxT1G Series, SZMMSZxxxT1G Series
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
IRReverse Leakage Current @ VR
VRReverse Voltage
IFForward Current
VFForward Voltage @ IF
Zener Voltage Regulator
IF
V
I
IR
IZT
VR
VZ
VF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Device*
Device
Marking
VZ1 (Volts)
(Notes 3 and 4)
ZZT1
(Note 5)
VZ2 (Volts)
(Notes 3 and 4)
ZZT2
(Note 5)
Max Reverse
Leakage Current
@ IZT1 = 5 mA @ IZT2 = 1 mA IR @ VR
Min Nom Max WMin Max W mAVolts
MMSZ2V4T1G T1 2.28 2.4 2.52 100 1.7 2.1 600 50 1
MMSZ2V7T1G T2 2.57 2.7 2.84 100 1.9 2.4 600 20 1
MMSZ3V0T1G T3 2.85 3.0 3.15 95 2.1 2.7 600 10 1
MMSZ3V3T1G T4 3.14 3.3 3.47 95 2.3 2.9 600 5 1
MMSZ3V6T1G T5 3.42 3.6 3.78 90 2.7 3.3 600 5 1
MMSZ3V9T1G U1 3.71 3.9 4.10 90 2.9 3.5 600 3 1
MMSZ4V3T1G U2 4.09 4.3 4.52 90 3.3 4.0 600 3 1
MMSZ4V7T1G U3 4.47 4.7 4.94 80 3.7 4.7 500 3 2
MMSZ5V1T1G U4 4.85 5.1 5.36 60 4.2 5.3 480 2 2
MMSZ5V6T1G/T3G U5 5.32 5.6 5.88 40 4.8 6.0 400 1 2
MMSZ6V2T1G V1 5.89 6.2 6.51 10 5.6 6.6 150 3 4
MMSZ6V8T1G V2 6.46 6.8 7.14 15 6.3 7.2 80 2 4
MMSZ7V5T1G V3 7.13 7.5 7.88 15 6.9 7.9 80 1 5
MMSZ8V2T1G V4 7.79 8.2 8.61 15 7.6 8.7 80 0.7 5
MMSZ9V1T1G V5 8.65 9.1 9.56 15 8.4 9.6 100 0.5 6
MMSZ10T1G/T3G A1 9.50 10 10.50 20 9.3 10.6 150 0.2 7
MMSZ11T1G A2 10.45 11 11.55 20 10.2 11.6 150 0.1 8
MMSZ12T1G A3 11.40 12 12.60 25 11.2 12.7 150 0.1 8
MMSZ13T1G A4 12.35 13 13.65 30 12.3 14.0 170 0.1 8
MMSZ15T1G A5 14.25 15 15.75 30 13.7 15.5 200 0.05 10.5
MMSZ16T1G X1 15.20 16 16.80 40 15.2 17.0 200 0.05 11.2
MMSZ18T1G/T3G X2 17.10 18 18.90 45 16.7 19.0 225 0.05 12.6
MMSZ20T1G X3 19.00 20 21.00 55 18.7 21.1 225 0.05 14
MMSZ22T1G X4 20.90 22 23.10 55 20.7 23.2 250 0.05 15.4
MMSZ24T1G X5 22.80 24 25.20 70 22.7 25.5 250 0.05 16.8
3. The type numbers shown have a standard tolerance of ±5% on the nominal Zener Voltage.
4. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied.
The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz.
*Include SZ-prefix devices where applicable.
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MMSZxxxT1G Series, SZMMSZxxxT1G Series
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Device*
Device
Marking
VZ1 (Volts)
(Notes 6 and 7)
ZZT1
(Note 8)
VZ2 (Volts)
(Notes 6 and 7)
ZZT2
(Note 8)
Max Reverse
Leakage Current
@ IZT1 = 2 mA @ IZT2 = 0.1 mA
@ IZT2 =
0.5 mA IR @ VR
Min Nom Max WMin Max W mAVolts
MMSZ27T1G/T3G Y1 25.65 27 28.35 80 25 28.9 300 0.05 18.9
MMSZ30T1G Y2 28.50 30 31.50 80 27.8 32 300 0.05 21
MMSZ33T1G Y3 31.35 33 34.65 80 30.8 35 325 0.05 23.1
MMSZ36T1G Y4 34.20 36 37.80 90 33.8 38 350 0.05 25.2
MMSZ39T1G Y5 37.05 39 40.95 130 36.7 41 350 0.05 27.3
MMSZ43T1G Z1 40.85 43 45.15 150 39.7 46 375 0.05 30.1
MMSZ47T1G Z2 44.65 47 49.35 170 43.7 50 375 0.05 32.9
MMSZ51T1G Z3 48.45 51 53.55 180 47.6 54 400 0.05 35.7
MMSZ56T1G/T3G Z4 53.20 56 58.80 200 51.5 60 425 0.05 39.2
6. The type numbers shown have a standard tolerance of ±5% on the nominal Zener Voltage.
7. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
8. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied.
The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz.
*Include SZ-prefix devices where applicable.
www.cnsemi.com
MMSZxxxT1G Series, SZMMSZxxxT1G Series
www.onsemi.com
4
TYPICAL CHARACTERISTICS
VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ
VZ, NOMINAL ZENER VOLTAGE (V)
3
2
1
0
1
2
3
4
5
6
7
8
12111098765432
Figure 1. Temperature Coefficients
(Temperature Range 55°C to +150°C)
TYPICAL TC VALUES
FOR MMSZxxxT1G SERIES,
SZMMSZxxxT1G SERIES
VZ @ IZT
VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ
100
10
1
10 100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 2. Temperature Coefficients
(Temperature Range 55°C to +150°C)
VZ @ IZT
1.2
1.0
0.8
0.6
0.4
0.2
01501251007550250
T, TEMPERATURE (°C)
Figure 3. Steady State Power Derating
PD versus TA
PD versus TL
Ppk, PEAK SURGE POWER (WATTS)
0.1
PW, PULSE WIDTH (ms)
Figure 4. Maximum Nonrepetitive Surge Power
1 10 100 1000
1000
100
10
1
RECTANGULAR
WAVEFORM, TA = 25°C
100
VZ, NOMINAL ZENER VOLTAGE
Figure 5. Effect of Zener Voltage on
Zener Impedance
101
ZZT, DYNAMIC IMPEDANCE ( )Ω
1000
100
10
1
TJ = 25°C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IZ = 1 mA
20 mA
VF
, FORWARD VOLTAGE (V)
Figure 6. Typical Forward Voltage
1.1.11.00.90.80.70.60.50.4
IF, FORWARD CURRENT (mA)
1000
100
10
1
75 V (MMSZ5267BT1G)
91 V (MMSZ5270BT1G)
150°C75°C 25°C 0°C
TYPICAL TC VALUES
FOR MMSZxxxT1G SERIES,
SZMMSZxxxT1G SERIES
5 mA
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MMSZxxxT1G Series, SZMMSZxxxT1G Series
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5
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 7. Typical Capacitance
1000
100
10
1
101
BIAS AT
50% OF VZ NOM
TA = 25°C
0 V BIAS
1 V BIAS
12
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.01 1086420
TA = 25°C
IZ, ZENER CURRENT (mA)
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.01 10 30 50 70 90
TA = 25°C
IR, LEAKAGE CURRENT ( A)μ
9
0
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 8. Typical Leakage Current
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001
80706050403020100
+150°C
+25°C
55°C
IZ, ZENER CURRENT (mA)
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
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SOD123
CASE 42504
ISSUE G
DATE 07 OCT 2009
SCALE 5:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
b
DA
L
C
1
2
A1
DIM MIN NOM MAX
MILLIMETERS INCHES
A0.94 1.17 1.35 0.037
A1 0.00 0.05 0.10 0.000
b0.51 0.61 0.71 0.020
c
1.60
0.15
0.055D1.40 1.80
E2.54 2.69 2.84 0.100
---
3.68 0.140
L0.25
3.86
0.010
HE
0.046
0.002
0.024
0.063
0.106
0.145
0.053
0.004
0.028
0.071
0.112
0.152
MIN NOM MAX
3.56
HE
---
--- ---
0.006
--- ---
--- ---
GENERIC
MARKING DIAGRAM*
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
*This information is generic. Please refer to device data
sheet for actual part marking. PbFree indicator, “G” or
microdot “ G”, may or may not be present.
XXX = Specific Device Code
M = Date Code
G= PbFree Package
XXXMG
G
1
STYLE 1:
PIN 1. CATHODE
2. ANODE
1.22
0.048
0.91
0.036
2.36
0.093
4.19
0.165
ǒmm
inchesǓ
SCALE 10:1
q
--- ---
q00
10 10
°°° °
(Note: Microdot may be in either location)
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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PAGE 1 OF 1
SOD123
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1
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