SMAJ5913 - 5956, e3 Datasheet by Microsemi Corporation

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I O Microsemi ’PLH-S Forthe latesl infermallon. VISlt our website hfigzl/wwwmlcroseml cum. Also available in E 1N591EBP—1N59563F E 1PMT59133 — IPMTEBSGE FITS MSC — Lawrence Junction and Storage Temperamre TJ and TsTG £510 +150 °C Thermal Resistance Junction-lo-Lead R51 15 “CIW ‘Ul er Dissipa Figure 1 M50 — Ireland Solder Temperamre @ 10 s TSP 260 “C Notes last gage www. microsemi.com
RF01130, Rev. A (5/13/13) ©2013 Microsemi Corporation Page 1 of 6
SMAJ5913Be3 SMAJ5956Be3
Compliant
Silicon 3.0 Watt Zener Diode
DESCRIPTION
The SMAJ5913Be3 – SMAJ5956Be3 series of surface mount 3.0 watt Zeners provides voltage
regulation in a selection from 3.3 to 200 volts with different tolerances as identified by suffix letter
on the part number. It is equivalent to the JEDEC registered 1N5913B through 1N5956B series
with identical electrical characteristics except it is rated at 3.0 W instead of 1.5 W with the lower
thermal resistance features of this surface mount packaging. These plastic encapsulated Zeners
have a moisture classification of Level 1 with no dry pack required.
.
DO-214AC or BA
(SMAJ) Package
Also available in:
DO-41 package
( plastic axial leaded)
1N5913BP 1N5956BP
DO-216 package
( tabbed surface moun t)
1PMT5913B 1PMT5956B
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
Ideal for high-density and low-profile mounting.
Zener voltage available 3.3V to 200V.
Available voltage tolerances are 10%, 5%, 2%, and 1%.
RoHS compliant.
APPLICATIONS / BENEFITS
Regulates voltage over a broad range of current and temperature.
Nonsensitive to ESD per MIL-STD-750 method 1020.
High specified maximum current (IZM) with adequately heat sinking.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B.
MAXIMUM RATINGS
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +150
ºC
Thermal Resistance Junction-to-Lead
RӨJL
15
ºC/W
Thermal Resistance Junction-to-Ambient (1)
RӨJA
80
ºC/W
Rated Average Power Dissipation @ +25 ºC
(also see derating in Figure 1)
P
M(AV)
3.0
W
Forward Voltage @ 200 mA
VF
1.2
V
Solder Temperature @ 10 s
TSP
260
oC
Notes: 1. When mounted on FR4 PC board (1oz Cu) with recommended footprint (see last page).
MSC Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Package Dimensions Surface Mount Package RoHS Compliant 3 Watt Power Level T—olerance Level J-Bend Lead Form JEDEc mge number (see lectncal Characte ® table) lz, lzr, lzk Regulator Current: The dc regulator current (lz). at a specified test point (lzr), near breakdown knee (lzk). IzM Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating. VR Reverse Voltage: The dc voltage applied in the reverse direction below the breakdown region. Vz Zener Voltage: The Zener voltage the devrce will exhibit at a specified current (lz) in its breakdown region. Dynamic Impedance: The small signal Impedance the ode when biased to oper te in ts breakdown re specified rms current modulation (typically 10% of In or sz) and superimposed on lzr or lzK respectively.
RF01130, Rev. A (5/13/13) ©2013 Microsemi Corporation Page 2 of 6
SMAJ5913Be3 SMAJ5956Be3
MECHANICAL and PACKAGING
CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0.
TERMINALS: RoHS compliant annealed matte-tin plating. Solderable to MIL-STD-750, method 2026.
MARKING: Includes part number without prefix (e.g. 5913B, 5916Be3, 5926C, 5951De3, etc.).
POLARITY: Cathode indicated by band. Diode to be operated with the banded end positive with respect to the opposite end for
Zener regulation.
TAPE & REEL option: Standard per EIA-481-1-A with 12 mm tape (add “TR” suffix to part number). Consult factory for
quantities.
WEIGHT: Approximately 0.064 grams.
See Package Dimensions on last page.
PART NOMENCLATURE
SM A J 5913 B e3
Surface Mount Package
3 Watt Power Level
J-Bend Lead Form
JEDEC type number
(see Electrical
Characteristics table)
Tolerance Level
A = 10% tolerance
B = 5% tolerance
C = 2% tolerance
D = 1% tolerance
SYMBOLS & DEFINITIONS
Symbol
Definition
I
R
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage V
R
and temperature.
IZ, IZT, IZK
Regulator Current: The dc regulator current (IZ), at a specified test point (IZT), near breakdown knee (IZK ).
IZM
Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
VR
Reverse Voltage: The dc voltage applied in the reverse direction below the breakdown region.
VZ
Zener Voltage: The Zener voltage the device will exhibit at a specified current (IZ) in its breakdown region.
ZZT or Z ZK
Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a
specified rms current modulation (typically 10% of IZT or IZK ) and superimposed on IZT or IZK respectively.
I O Microsemi @ 25 °C unless otherwise stated ”A SMAJ5913B 3.3 113.6 10 10 500 100 1 0 903 SMAJ5914B 3.6 104.2 9.0 1 0 500 75 1.0 332 SMAJ5915B 3.9 96.1 7.5 1 0 500 25 1.0 763 SMAJ5916B 4.3 37.2 6.0 1 0 500 5 0 1.0 696 SMAJ5917B 4.7 79.3 5.0 1 0 500 5 0 1 5 633 SMAJ5913B 5.1 73.5 4.0 1 0 350 5 0 2.0 533 SMAJ5919B 5.6 66.9 2.0 10 250 5 0 3.0 534 SMAJ592DB 6.2 60.5 2.0 1 0 200 5 0 4.0 432 SMAJ5921B 6.3 55.1 2.5 1 0 200 5 0 5.2 440 SMAJ5922B 7.5 50 3.0 0 5 400 5 0 6.0 400 SMAJ5923B 3.2 45.7 3.5 0 5 400 5 0 6.5 364 SMAJ5924B 9.1 41.2 4.0 0 5 500 5 0 7.0 323 SMAJ5925B 10 37.5 4.5 0.25 500 5 0 3.0 300 SMAJ5926B 11 34.1 5.5 0.25 550 1 0 3.4 272 SMAJ5927B 12 31.2 6.5 0.25 550 1 0 9.1 250 SMAJ5923B 13 23.3 7.0 0.25 550 1 0 9.9 230 SMAJ5929B 15 25 9.0 0.25 600 1 0 11.4 200 SMAJ593DB 16 23.4 10 0.25 600 1 0 12.2 136 SMAJ5931B 13 20.3 12 0.25 650 10 13.7 166 SMAJ5932B 20 13.7 14 0.25 650 1 0 15.2 150 SMAJ5933B 22 17 17 5 0.25 650 1 0 16.7 136 SMAJ59345 24 15.6 19 0.25 700 1 0 13.2 124 SMAJ5935B 27 13.9 23 0.25 700 1 0 20.6 110 SMAJ5936B 30 12.5 23 0.25 750 1 0 22.3 100 SMAJ5937B 33 11.4 33 0.25 300 1 0 25.1 90 SMAJ5933B 36 10.4 33 0.25 350 1 0 27.4 32 SMAJ5939B 39 9,6 45 0.25 900 1 0 29.7 76 SMAJ59405 43 3,7 53 0.25 950 1 0 32.7 63 SMAJ5941B 47 3,0 67 0.25 1000 1 0 35.3 62 SMAJ5942B 51 7,3 70 0.25 1100 1 0 33.3 53 SMAJ5943B 56 6,7 36 0.25 1300 1 0 42.6 52 SMAJ59445 62 6,0 100 0.25 1500 1 0 47.1 43 SMAJ5945B 63 5,5 120 0.25 1700 1 0 51.2 44 SMAJ5946B 75 5,0 140 0.25 2000 1 0 56 40 SMAJ5947B 32 4,6 160 0.25 2500 1 0 62.2 36 SMAJ5943B 91 4,1 200 0.25 3000 1 0 69.2 32 SMAJ5949B 100 3,7 250 0.25 3100 1 0 76 30 SMAJ595DB 110 3,4 300 0.25 4000 1 0 33.6 26 SMAJ5951B 120 3,1 330 0.25 4500 1 0 91.2 24 SMAJ5952B 130 2,9 450 0.25 5000 1 0 93.3 22 SMAJ5953B 150 2,5 600 0.25 6000 1 0 114 20 SMAJ59545 160 2,3 700 0.25 6500 1 0 121.6 13 SMAJ5955B 130 2,1 900 0.25 7000 1 0 136.3 16 SMAJ5956B 200 1.9 1200 0.25 3000 1 0 152 14 an powerof 3,0 wat n Maxwmum Ralmgs IA
RF01130, Rev. A (5/13/13) ©2013 Microsemi Corporation Page 3 of 6
SMAJ5913Be3 SMAJ5956Be3
ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise stated
JEDEC TYPE
NUMBER
ZENER
VOLTAGE
VZ
TEST
CURRENT
IZT
DYNAMIC
IMPEDANCE
ZZT
KNEE
CURRENT
IZK
KNEE
IMPEDANCE
ZZK
REVERSE
CURRENT
IR (MAX.)
REVERSE
VOLTAGE
VR
MAX. DC
CURRENT
IZM
Volts
mA
Ohms
mA
Ohms
µA
Volts
mA
SMAJ5913B
SMAJ5914B
SMAJ5915B
SMAJ5916B
SMAJ5917B
3.3
3.6
3.9
4.3
4.7
113.6
104.2
96.1
87.2
79.8
10
9.0
7.5
6.0
5.0
1.0
1.0
1.0
1.0
1.0
500
500
500
500
500
100
75
25
5.0
5.0
1.0
1.0
1.0
1.0
1.5
908
832
768
696
638
SMAJ5918B
SMAJ5919B
SMAJ5920B
SMAJ5921B
SMAJ5922B
5.1
5.6
6.2
6.8
7.5
73.5
66.9
60.5
55.1
50
4.0
2.0
2.0
2.5
3.0
1.0
1.0
1.0
1.0
0.5
350
250
200
200
400
5.0
5.0
5.0
5.0
5.0
2.0
3.0
4.0
5.2
6.0
588
534
482
440
400
SMAJ5923B
SMAJ5924B
SMAJ5925B
SMAJ5926B
SMAJ5927B
8.2
9.1
10
11
12
45.7
41.2
37.5
34.1
31.2
3.5
4.0
4.5
5.5
6.5
0.5
0.5
0.25
0.25
0.25
400
500
500
550
550
5.0
5.0
5.0
1.0
1.0
6.5
7.0
8.0
8.4
9.1
364
328
300
272
250
SMAJ5928B
SMAJ5929B
SMAJ5930B
SMAJ5931B
SMAJ5932B
13
15
16
18
20
28.8
25
23.4
20.8
18.7
7.0
9.0
10
12
14
0.25
0.25
0.25
0.25
0.25
550
600
600
650
650
1.0
1.0
1.0
1.0
1.0
9.9
11.4
12.2
13.7
15.2
230
200
186
166
150
SMAJ5933B
SMAJ5934B
SMAJ5935B
SMAJ5936B
SMAJ5937B
22
24
27
30
33
17
15.6
13.9
12.5
11.4
17.5
19
23
28
33
0.25
0.25
0.25
0.25
0.25
650
700
700
750
800
1.0
1.0
1.0
1.0
1.0
16.7
18.2
20.6
22.8
25.1
136
124
110
100
90
SMAJ5938B
SMAJ5939B
SMAJ5940B
SMAJ5941B
SMAJ5942B
36
39
43
47
51
10.4
9.6
8.7
8.0
7.3
38
45
53
67
70
0.25
0.25
0.25
0.25
0.25
850
900
950
1000
1100
1.0
1.0
1.0
1.0
1.0
27.4
29.7
32.7
35.8
38.8
82
76
68
62
58
SMAJ5943B
SMAJ5944B
SMAJ5945B
SMAJ5946B
SMAJ5947B
56
62
68
75
82
6.7
6.0
5.5
5.0
4.6
86
100
120
140
160
0.25
0.25
0.25
0.25
0.25
1300
1500
1700
2000
2500
1.0
1.0
1.0
1.0
1.0
42.6
47.1
51.2
56
62.2
52
48
44
40
36
SMAJ5948B
SMAJ5949B
SMAJ5950B
SMAJ5951B
SMAJ5952B
91
100
110
120
130
4.1
3.7
3.4
3.1
2.9
200
250
300
380
450
0.25
0.25
0.25
0.25
0.25
3000
3100
4000
4500
5000
1.0
1.0
1.0
1.0
1.0
69.2
76
83.6
91.2
98.8
32
30
26
24
22
SMAJ5953B
SMAJ5954B
SMAJ5955B
SMAJ5956B
150
160
180
200
2.5
2.3
2.1
1.9
600
700
900
1200
0.25
0.25
0.25
0.25
6000
6500
7000
8000
1.0
1.0
1.0
1.0
114
121.6
136.8
152
20
18
16
14
NOTES:
1. Suffix B (shown) denotes a +/-5% tolerance o n nomi nal V Z, A denotes a +/-10% tolerance, C denotes a 2% tolerance, and D denotes a
+/-1% tolerance.
2. Zener vo ltage (V Z) is measured at TL = 30 oC and 90 seco nds after application of dc current.
3. The Zener impedance is derived from the 60 Hz ac voltage, which results when an ac current having an rms value equal to 10% of the
dc Zener current (I ZT or IZK ) is superimposed on IZT or IZK .
4. The maximum dc current (I ZM ) is based only on the maximum power of 3.0 watts at TL < 105 oC. These values must be reduced by
48% (1.56 W) when mounted on PC boards as described in Maximum Ratings.
I O Microsemi 3000 2500 2000 1500 1000 TA on FR4 500 PC Board Pd, Maximum Power Dissipation (mW) 0 25 50 75 100 125 150 175200 FIGURE 1 POWER DERATING CURVE 1000 100 10 Typical Maximum Power in Watts 1.0 01 010 10 10 100 1000 FIGURE 2 TRANSIENT SURGE CAPABILITY
RF01130, Rev. A (5/13/13) ©2013 Microsemi Corporation Page 4 of 6
SMAJ5913Be3 SMAJ5956Be3
GRAPHS
Temperature ºC
FIGURE 1
POWER DERATING CURVE
Square Wave Pulse Width (Non-Repetitive) in Milliseconds
FIGURE 2
TRANSIENT SURGE CAPABILITY
Pd, Maximum Power
Dissipation (mW)
Typical Maximum Power in Watts
I o Microsemi 1000 900 am 700 600 500 400 300 200 1 DH 90 33 AI zero volts 50 50 40 Typical Capacitance in Pioofarads 3" At - 2 volts (VR) 20 1n n 20 40 so so 100 120 140 Ian 150 200 220 FIGURE 3 CAPACITANCE vs. Vz CURVE
RF01130, Rev. A (5/13/13) ©2013 Microsemi Corporation Page 5 of 6
SMAJ5913Be3 SMAJ5956Be3
GRAPHS
Zener Voltage VZ
FIGURE 3
CAPACITANCE vs. VZ CURVE
Typical Capacitance in Picofarads
I o Microsemi 1_I +r_—> 0.075 0.009 1.90 2.25 H 0.050 0.064 1.27 1.63 0.004 0.008 0.10 0.20 0.006 0.012 0.15 0.31 D ‘ \ C 0.031 0.059 0.80 1.50 4 A L *7 0.189 0.205 4.80 5.20 _ .1— _ 0.157 0.101 4.00 4.60 <— 0.095="" 0.104="" 2.40="" 2.65="" i="" e="" ,1="" b="" |¢="" f=""><— g="" —=""> «A4» |<—o —="">| (MAX) 0.074 2.413 (MIN) 0.060 1.52 ‘E’ (MIN) 0.066 1.66 (TYP) 0.208 5.26 <—d—>
RF01130, Rev. A (5/13/13) ©2013 Microsemi Corporation Page 6 of 6
SMAJ5913Be3 SMAJ5956Be3
PACKAGE DIMENSIONS
NOTES: Dimension A” is within DO-214BA but higher than DO-214AC standard JEDEC outlines.
Dimension “Bis wider than both JEDEC outlines for lower thermal resistance.
PAD LAYOUT
Dimensions
Ltr
Inch
Millimeters
Min
Max
Min
Max
A
0.075
0.089
1.90
2.25
B
0.050
0.064
1.27
1.63
C
0.004
0.008
0.10
0.20
D
0.006
0.012
0.15
0.31
E
0.031
0.059
0.80
1.50
G
0.189
0.205
4.80
5.20
H
0.157
0.181
4.00
4.60
J
0.095
0.104
2.40
2.65
Ltr
Inch
Millimeters
A (MAX)
0.074
2.413
B (MIN)
0.060
1.52
C (MIN)
0.066
1.68
D (TYP)
0.208
5.28

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