JFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Voltage - Breakdown (V(BR)GSS)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Voltage - Cutoff (VGS off) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

2SK1070PICTL-E JFET N-CH 22V 50MA 3MPAK Renesas Electronics Corporation	0 In Stock	Obsolete	-	Tape & Reel (TR)	Obsolete	N-Channel	22 V	12 mA @ 5 V	50 mA	0 V @ 10 µA	9pF @ 5V	150 mW	150°C	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-MPAK
2SK1070PIDTL-E JFET N-CH 22V 50MA 3MPAK Renesas Electronics Corporation	0 In Stock	Obsolete	-	Tape & Reel (TR)	Obsolete	N-Channel	22 V	12 mA @ 5 V	50 mA	0 V @ 10 µA	9pF @ 5V	150 mW	150°C	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-MPAK
2SK1070PIETL-E JFET N-CH 22V 50MA 3MPAK Renesas Electronics Corporation	0 In Stock	Obsolete	-	Tape & Reel (TR)	Obsolete	N-Channel	22 V	12 mA @ 5 V	50 mA	0 V @ 10 µA	9pF @ 5V	150 mW	150°C	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-MPAK
2SK1070PIETR-E JFET N-CH 22V 50MA 3MPAK Renesas Electronics Corporation	0 In Stock	Obsolete	-	Tape & Reel (TR)	Obsolete	N-Channel	22 V	12 mA @ 5 V	50 mA	0 V @ 10 µA	9pF @ 5V	150 mW	150°C	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-MPAK

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Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.