JFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Voltage - Breakdown (V(BR)GSS)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Input Capacitance (Ciss) (Max) @ Vds	Resistance - RDS(On)	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

IJW120R100T1FKSA1 JFET N-CH 1.2KV 26A TO247-3 Infineon Technologies	0 In Stock	Obsolete	CoolSiC™	Tube	Obsolete	N-Channel	1200 V	1200 V	1.5 µA @ 1200 V	26 A	1550pF @ 19.5V (VGS)	100 mOhms	190 W	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	PG-TO247-3
IJW120R070T1FKSA1 JFET N-CH 1.2KV 35A TO247-3 Infineon Technologies	0 In Stock	Obsolete	CoolSiC™	Tube	Obsolete	N-Channel	1200 V	1200 V	3.3 µA @ 1200 V	35 A	2000pF @ 19.5V (VGS)	70 mOhms	238 W	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	PG-TO247-3

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Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.