Diode Arrays

Results: 4
Series
-*
Product Status
ActiveObsolete
Technology
SiC (Silicon Carbide) SchottkyStandard
Current - Average Rectified (Io) (per Diode)
10A (DC)15A (DC)60A (DC)
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 10 A1.8 V @ 15 A2.1 V @ 30 A
Reverse Recovery Time (trr)
15 ns90 ns
Current - Reverse Leakage @ Vr
2 µA @ 600 V10 µA @ 600 V
Operating Temperature - Junction
-55°C ~ 150°C-55°C ~ 155°C150°C (Max)
Package / Case
TO-220-2 Full PackTO-3P-3, SC-65-3
Supplier Device Package
TO-220FP-2LTO-3P
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Series
Package
Product Status
Diode Configuration
Technology
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
DIODE ARRAY- 6 MATCH. UF,LOW CAP
CA3039
DIODE ARRAY- 6 MATCH. UF,LOW CAP
Renesas Electronics Corporation
0
In Stock
Obsolete
*
-
Obsolete------------
DIODE ARR GP 600V 60A TO220FP-2L
RJU60C3WDPP-M0#T2
DIODE ARR GP 600V 60A TO220FP-2L
Renesas Electronics Corporation
0
In Stock
Active
-
Tube
Active1 Pair Common CathodeStandard600 V60A (DC)2.1 V @ 30 AFast Recovery =< 500ns, > 200mA (Io)90 ns2 µA @ 600 V150°C (Max)Through HoleTO-220-2 Full PackTO-220FP-2L
0
In Stock
Obsolete
-
Tube
Obsolete1 Pair Common CathodeSiC (Silicon Carbide) Schottky600 V10A (DC)1.8 V @ 10 AFast Recovery =< 500ns, > 200mA (Io)15 ns10 µA @ 600 V-55°C ~ 150°CThrough HoleTO-3P-3, SC-65-3TO-3P
0
In Stock
Obsolete
-
Tube
Obsolete1 Pair Common CathodeSiC (Silicon Carbide) Schottky600 V15A (DC)1.8 V @ 15 AFast Recovery =< 500ns, > 200mA (Io)15 ns10 µA @ 600 V-55°C ~ 155°CThrough HoleTO-3P-3, SC-65-3TO-3P
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Diode Arrays


Products within the diode and rectifier array family incorporate two or more discrete diodes within a single package. They are characterized in terms similar to those used for single discrete diodes, with the addition of a "Diode Configuration" attribute indicating the presence and character of any internal connections between the diodes in the device. Note that arrays with a full-bridge configuration are specifically excluded, and listed as a separate product family.