Summary
This development board, measuring 11mm x 12mm, contains two enhancement mode (eGaN®) field effect transistors (FETs) arranged in a half bridge configuration with an onboard Texas Instruments LM5113 gate drive.
The purpose of these development boards is to simplify the evaluation process by optimizing the layout and including all the critical components on a single board that can be easily connected into any existing converter.
A complete block diagram of the circuit is given in Figure 1.
* Status: New Device Offered (NDO)
The GaN Experts recommend EPC2055 for new designs
NDO Note: This is an earlier generation device, and although it is fully supported, the recommended device will provide better price and performance in most applications.
Specifications
| Manufacturer | EPC |
|---|---|
| Category | Power Management |
| Sub-Category | Power Output Stages (H-Bridge, Half Bridge) |
| Eval Board Part Number | 917-1049-ND |
| Eval Board Supplier | EPC |
| Eval Board |
Normally In Stock
|
| Configuration |
1 Half H-Bridge
|
| Voltage Out Range |
0 ~ 20 V
|
| Current Out |
40 A
|
| Interface |
PWM, Dual
PWM, Single |
| Features |
Shoot Through Protection
|
| Switching Frequency (Max) |
1 MHz
|
| Component Count + Extras |
12 + 0
|
| Design Author |
EPC
|
| Main I.C. Base Part |
EPC2015C
EPC2023 |
| Date Created By Author | |
| Date Added To Library | 2023-11 |
Eval Board
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