Summary
The EPC9004C development board is a 200 V maximum device voltage, 2 A maximum output current, half bridge with onboard gate drives, featuring the EPC2012C enhancement mode (eGaN®) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2012C eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.
The EPC9004C development board is 2” x 1.5” and has two EPC2012C eGaN FETs in a half bridge configuration using Texas Instruments UCC27611 gate driver with supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A complete block diagram of the circuit is given in figure 1.
For more information on the EPC2012C eGaN FET please refer to the datasheet. The datasheet should be read in conjunction with this quick start guide. GaN
Specifications
| Manufacturer | EPC |
|---|---|
| Category | Power Management |
| Sub-Category | Power Output Stages (H-Bridge, Half Bridge) |
| Eval Board Part Number | 917-1092-ND |
| Eval Board Supplier | EPC |
| Eval Board |
Normally In Stock
|
| Configuration |
1 H-Bridge
|
| Voltage Out Range |
0 ~ 200 V
|
| Current Out |
2 A
|
| Interface |
PWM, Single
|
| Features |
Shoot Through Protection
|
| Switching Frequency (Max) |
Not given
|
| Component Count + Extras |
43 + 11
|
| Design Author |
EPC
|
| Main I.C. Base Part |
EPC2012C
|
| Date Created By Author | |
| Date Added To Library | 2017-12 |
