Single FETs, MOSFETs

Results: 2

Filters

Stacked

Scrolling

Search Entry

Showing

of 2

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRFP4668PBF MOSFET N-CH 200V 130A TO247AC Infineon Technologies	8,119 In Stock	1 : ¥66.99000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	130A (Tc)	10V	9.7mOhm @ 81A, 10V	5V @ 250µA	241 nC @ 10 V	±30V	10720 pF @ 50 V	-	520W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFP4668PBFXKMA1 TRENCH >=100V PG-TO247-3 Infineon Technologies	396 In Stock	1 : ¥66.99000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	130A (Tc)	10V	9.7mOhm @ 81A, 10V	5V @ 250µA	241 nC @ 10 V	±30V	10720 pF @ 50 V	-	520W	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3

Showing

of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.